CYSTEKEC HBN3101S6R Npn epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 1/6
NPN Epitaxial Planar Transistor
HBN3101S6R
(Dual Transistors)
Features
• Two BF422 chips in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• High BVCEO, BVCEO≧300V
• Pb-free lead plating and halogen-free package.
Equivalent Circuit
Outline
HBN3101S6R
Tr1
SOT-363
Tr2
Ordering Information
Device
HBN3101S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBN3101S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 2/6
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
300
300
5
100
300 (Note 1)
200 (total) (Note 2)
150
-55~+150
Unit
V
V
V
mA
mA
mW
°C
°C
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
300
300
5
100
15
60
-
Typ.
-
Max.
100
100
300
900
250
15
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
IE=0, VCB=300V
VEB=5V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
HBN3101S6R
CYStek Product Specification
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
Saturation Voltage---(mV)
Current Gain---HFE
1000
VCE = 20V
100
VCE = 10V
VCE = 5V
1000
VCE(SAT) @ IC = 20IB
100
VCE(SAT) @ IC = 10IB
10
10
1
10
Collector Current---IC(mA)
1
100
10
100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curves
250
Power Dissipation---PD(mW)
Saturation Voltage---(mV)
1000
VBE(SAT) @ IC =10IB
100
200
Dual
150
Single
100
50
0
1
10
100
Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA(℃)
Recommended Soldering Footprint
HBN3101S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
HBN3101S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBN3101S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 6/6
SOT-363 Dimension
Marking:
Date Code:
Year + Month
Year : 6→2006,
7→2007,…, etc
Month : 1→Jan
2→Feb, …, 9→
Sep, A→Oct, B
→Nov, C→Dec
K4N
Device
Code
6-Lead SOT-363 Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Emitter1 (E1)
Pin 2. Base1 (B1)
Pin 3. Collector2 (C2)
Pin 4. Emitter2 (E2)
Pin 5. Base2 (B2)
Pin 6. Collector1 (C1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBN3101S6R
CYStek Product Specification
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