TI1 LT1009MKGD1 2.5-v integrated reference circuit Datasheet

LT1009M
www.ti.com ..................................................................................................................................................................................................... SLVS925 – APRIL 2009
2.5-V INTEGRATED REFERENCE CIRCUIT
FEATURES
1
•
•
•
•
•
•
Excellent Temperature Stability
Initial Tolerance: 0.2% Max
Dynamic Impedance: 0.6 Ω Typical
Wide Operating Current Range
Directly Interchangeable With LM136
•
(1)
Needs No Adjustment for Minimum
Temperature Coefficient
Available in Military (–55°C/125°C)
Temperature Range (1)
Custom temperature ranges available
DESCRIPTION/ORDERING INFORMATION
The LT1009 reference circuit is a precision-trimmed 2.5-V shunt regulator featuring low dynamic impedance and
a wide operating current range. The reference tolerance is achieved by on-chip trimming, which minimizes the
initial voltage tolerance and the temperature coefficient, αVZ.
Although the LT1009 needs no adjustments, a third terminal (ADJ) allows the reference voltage to be adjusted
±5% to eliminate system errors. In many applications, the LT1009 can be used as a terminal-for-terminal
replacement for the LM136-2.5, which eliminates the external trim network.
The LT1009 uses include 5-V system references, 8-bit analog-to-digital converter (ADC) and digital-to-analog
converter (DAC) references, and power-supply monitors. The device also can be used in applications such as
digital voltmeters and current-loop measurement and control systems.
The LT1009 is characterized for operation from –55°C to 125°C.
SYMBOL
ANODE
CATHODE
ADJ
ORDERING INFORMATION (1)
TA
PACKAGE(BARE DIE) (2)
ORDERABLE PART NUMBER
–55°C to 125°C
CHIPTRAY
LT1009MKGD1
(1)
(2)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
BARE DIE INFORMATION
DIE THICKNESS
BACKSIDE FINISH
BOND PAD METALIZATION
COMPOSITION
15 Mils
Silicon with backgrind
AlCu/TiW
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
LT1009M
SLVS925 – APRIL 2009 ..................................................................................................................................................................................................... www.ti.com
Origin
a
c
b
d
Bond Pad Coordinates in Microns - Rev A
DISCRIPTION
PAD NUMBER
a
b
c
d
ANODE
1
127.000
127.000
243.840
243.840
ANODE
2
335.280
127.000
439.420
231.140
ADJ
3
716.280
130.810
833.120
243.840
Do not connect
4
1073.150
133.350
1169.670
229.870
Do not connect
5
1217.930
133.350
1314.450
229.870
Do not connect
6
1075.690
316.230
1172.210
412.750
Do not connect
7
1197.610
420.370
1294.130
516.890
Do not connect
8
1073.150
567.690
1169.670
664.210
Do not connect
9
1200.150
890.270
1296.670
986.790
Do not connect
10
1116.330
1032.510
1212.850
1129.030
CATHODE
11
902.970
929.640
1004.570
1066.800
CATHODE
12
703.580
1115.060
820.420
1229.360
ANODE
ANODE
48.819 mils
CATHODE
ADJ
2
-
-
CATHODE
52.598 mils
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Product Folder Link(s): LT1009M
LT1009M
www.ti.com ..................................................................................................................................................................................................... SLVS925 – APRIL 2009
SCHEMATIC
CATHODE
Q14
Q11
24 kΩ
24 kΩ
6.6 kΩ
Q8
20 pF
Q7
30 pF
Q10
10 kΩ
500 Ω
Q2
Q9
Q4
30 kΩ
ADJ
Q1
6.6 kΩ
Q6
Q3
Q12
Q5
720 Ω
Q13
ANODE
NOTE: All component values shown are nominal.
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
IR
Reverse current
20
mA
IF
Forward current
10
mA
TJ
Operating virtual junction temperature (2)
150
°C
Tstg
Storage temperature range
150
°C
(1)
(2)
–65
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
RECOMMENDED OPERATING CONDITIONS
TA
Operating free-air temperature range
MIN
MAX
UNIT
–55
125
°C
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LT1009M
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ELECTRICAL CHARACTERISTICS
at specified free-air temperature
PARAMETER
TEST CONDITIONS
VZ
Reference voltage
IZ = 1 mA
VF
Forward voltage
IF = 2 mA
TYP
MAX
25°C
2.49
2.5
2.51
Full range
2.46
2.535
25°C
0.4
1
Change in reference
voltage with temperature
αVZ
Average temperature
coefficient of reference
voltage (1)
IZ = 1 mA, VADJ = open
ΔVZ
Change in reference
voltage with current
IZ = 400 µA to 10 mA
ΔVZ/Δt
Long-term change in
reference voltage
IZ = 1 mA
ZZ
Reference impedance
IZ = 1 mA
UNIT
V
V
125
25°C
IZ = 1 mA,
VADJ = 0.6 V to VZ – 0.6 V
ΔVZ(temp)
LT1009M
MIN
IZ = 1 mA,
VADJ = GND to VZ
Adjustment range
(1)
TA
mV
45
Full range
15
mV
ppm/ °C
Full range
20
35
25°C
6
10
Full range
12
25°C
20
25°C
0.6
Full range
mV
ppm/ khr
1.6
1.8
Ω
The deviation parameter VZ(dev) is defined as the difference between the maximum and minimum values obtained over the
recommended operating temperature range, measured at IZ = 1 mA. The average full-range temperature coefficient of the reference
voltage (αVZ) is defined as:
Maximum VZ
VZ(dev)
ppm
=
|aVZ|
°C
VZ at 25°C
× 10
VZ(dev) at IZ = 1 mA
6
DTA
Minimum VZ
DTA
αVZ can be positive or negative, depending upon whether the minimum VZ or maximum VZ, respectively, occurs at the lower
temperature.
4
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LT1009M
www.ti.com ..................................................................................................................................................................................................... SLVS925 – APRIL 2009
TYPICAL CHARACTERISTICS
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of
the various devices.
REFERENCE VOLTAGE
vs
FREE-AIR TEMPERATURE
CHANGE IN REFERENCE VOLTAGE
vs
REFERENCE CURRENT
2.53
5
∆V Z − Change in Reference Voltage − mV
Iz = 1 mA
V Z − Reference Voltage − V
2.52
2.51
2.5
2.49
2.48
2.47
−50
4
3
2
1
0
−25
0
25
50
75
100
TA − Free-Air Temperature − °C
125
0
4
8
12
16
IZ − Reference Current − mA
Figure 1.
Figure 2.
REVERSE CURRENT
vs
REVERSE VOLTAGE
FORWARD VOLTAGE
vs
FORWARD CURRENT
20
1.2
10−1
TJ = 25°C
1
V F − Forward Voltage − V
I R − Reverse Current − A
10−2
10−3
TJ = 125°C
10−4
TJ = −55°C
0.6
1
1.4
1.8
2.2
VR − Reverse Voltage − V
0.6
0.4
0.2
TJ = 25°C
10−5
0.8
2.6
0
0.001
Figure 3.
0.01
0.1
1
IF − Forward Current − mA
10
Figure 4.
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LT1009M
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TYPICAL CHARACTERISTICS (continued)
REFERENCE IMPEDANCE
vs
FREQUENCY
NOISE VOLTAGE
vs
FREQUENCY
100
250
Iz = 1 mA
TJ = 25°C
200
V n − Noise Voltage − nV/ Hz
ZZ − Reference Impedance − Ω
Iz = 1 mA
TJ = −55°C to 125°C
10
1
0.1
10
100
1k
10k
f − Frequency − Hz
150
100
50
10
100k
100
Figure 5.
1k
f − Frequency − Hz
Figure 6.
10k
100k
TRANSIENT RESPONSE
3.5
3
Output
Input and Output Voltages − V
2.5
2
1.5
1
0.5
5 kΩ
Input
0
Output
8
Input
4
0
0
1
20
t − Time − µs
Figure 7.
6
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LT1009M
www.ti.com ..................................................................................................................................................................................................... SLVS925 – APRIL 2009
APPLICATION INFORMATION
5 V to 35 V
3.6 kΩ
Output
10-kΩ
Trim
(see Note A)
LT1009
A.
This does not affect temperature coefficient. It provides ±5% trim range.
Figure 8. 2.5-V Reference
3.6 V to 40 V
V+
LM334 R
V−
62 Ω
Output
LT1009
10 kΩ
Figure 9. Adjustable Reference With Wide Supply Range
LT1084
VI
10 µF
IN
ADJ
OUT
VO
10 µF
1.2 kΩ
374 Ω
LT1009
2 kΩ
Figure 10. Power Regulator With Low Temperature Coefficient
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LT1009M
SLVS925 – APRIL 2009 ..................................................................................................................................................................................................... www.ti.com
5V
5.1 kΩ
5V
5.1 kΩ
LT1009
10 kΩ
1%
−5 V
Output
9.76 kΩ
1%
500 Ω
5 kΩ
−5 V
Figure 11. Switchable ±1.25-V Bipolar Reference
1 µF
10 kΩ
VI ≥ 6 V
1 kΩ
−
10 kΩ
2.5 V
1 kΩ
+
+
100 kΩ
LT1009
+
LT1001C
20 µF
20 µF
Figure 12. Low-Noise 2.5-V Buffered Reference
8
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PACKAGE OPTION ADDENDUM
www.ti.com
25-Feb-2011
PACKAGING INFORMATION
Orderable Device
LT1009MKGD1
Status
(1)
Package Type Package
Drawing
ACTIVE
XCEPT
KGD
Pins
Package Qty
0
100
Eco Plan
TBD
(2)
Lead/
Ball Finish
Call TI
MSL Peak Temp
(3)
Samples
(Requires Login)
N / A for Pkg Type
Add to cart
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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OTHER QUALIFIED VERSIONS OF LT1009M :
• Catalog: LT1009
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 1
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