Advance Technical Information IXFT15N100Q3 IXFH15N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 15A Ω ≤ 1.05Ω ≤ 250ns TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 15 A IDM TC = 25°C, Pulse Width Limited by TJM 45 A IA TC = 25°C 7.5 A EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 690 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved z V 6.5 V ±100 nA 25 μA 1.5 mA 1.05 Ω High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100353(06/11) IXFT15N100Q3 IXFH15N100Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 7.5 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 12.5 S 3250 pF 265 pF 24 pF 0.20 Ω 28 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr Gate Input Resistance Resistive Switching Times td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 tf RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 10 ns 30 ns 8 ns 64 nC 23 nC 27 nC Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.18 °C/W RthJC RthCS TO-268 Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 15 A ISM Repetitive, Pulse Width Limited by TJM 60 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 250 ns trr IRM QRM IF = 7.5A, -di/dt = 100A/μs VR = 100V, VGS = 0V 7.6 A 660 nC TO-247 Outline 1 2 ∅P 3 e Note Terminals: 1 - Gate 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT15N100Q3 IXFH15N100Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 24 VGS = 10V 9V VGS = 10V 14 20 12 16 8V ID - Amperes ID - Amperes 10 8 6 12 8V 8 4 7V 4 2 7V 6V 0 0 0 2 4 6 8 10 12 14 0 16 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 7.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 14 3.0 VGS = 10V VGS = 10V 12 R DS(on) - Normalized 2.6 10 ID - Amperes 20 VDS - Volts VDS - Volts 7V 8 6 4 I D = 15A 2.2 1.8 I D = 7.5A 1.4 1.0 6V 2 0.6 5V 0 0.2 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 16 2.6 VGS = 10V 2.4 14 TJ = 125ºC 12 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 TJ = 25ºC 1.4 10 8 6 4 1.2 2 1.0 0.8 0 0 2 4 6 8 10 12 14 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 16 18 20 22 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT15N100Q3 IXFH15N100Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 25 18 TJ = - 40ºC 16 20 14 g f s - Siemens ID - Amperes 12 10 8 TJ = 125ºC 25ºC - 40ºC 6 25ºC 15 125ºC 10 4 5 2 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 2 4 6 8 VGS - Volts 10 12 14 16 18 20 80 90 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 50 45 VDS = 500V 14 I D = 7.5A 40 I G = 10mA 12 10 VGS - Volts IS - Amperes 35 30 25 20 8 6 15 TJ = 125ºC 4 10 TJ = 25ºC 2 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 30 40 50 60 70 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10000 f = 1 MHz 1ms 100µs 25µs Ciss 10 1000 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100 1 TJ = 150ºC Crss TC = 25ºC Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT15N100Q3 IXFH15N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_15N100Q3(Q6) 6-28-11