LMH6505 Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier General Description Features The LMH6505 is a wideband DC coupled voltage controlled gain stage followed by a high speed current feedback operational amplifier which can directly drive a low impedance load. The gain adjustment range is 80 dB for up to 10 MHz which is accomplished by varying the gain control input voltage, VG. Maximum gain is set by external components, and the gain can be reduced all the way to cutoff. Power consumption is 110 mW with a speed of 150 MHz and a gain control bandwidth (BW) of 100 MHz. Output referred DC offset voltage is less than 55 mV over the entire gain control voltage range. Device-to-device gain matching is within ±0.5 dB at maximum gain. Furthermore, gain is tested and guaranteed over a wide range. The output current feedback op amp allows high frequency large signals (Slew Rate = 1500 V/μs) and can also drive a heavy load current (60 mA) guaranteed. Near ideal input characteristics (i.e. low input bias current, low offset, low pin 3 resistance) enable the device to be easily configured as an inverting amplifier as well. To provide ease of use when working with a single supply, the VG range is set to be from 0V to +2V relative to the ground pin potential (pin 4). VG input impedance is high in order to ease drive requirement. In single supply operation, the ground pin is tied to a "virtual" half supply. The LMH6505’s gain control is linear in dB for a large portion of the total gain control range from 0 dB down to −85 dB at 25°C, as shown below. This makes the device suitable for AGC applications. For linear gain control applications, see the LMH6503 datasheet. The LMH6505 is available in either the 8-Pin SOIC or the 8Pin MSOP package. The combination of minimal external components and small outline packages allows the LMH6505 to be used in space-constrained applications. VS = ±5V, TA = 25°C, RF = 1 kΩ, RG = 100Ω, RL = 100Ω, AV = AVMAX = 9.4 V/V, Typical values unless specified. 150 MHz ■ −3 dB BW 100 MHz ■ Gain control BW 80 dB ■ Adjustment range (<10 MHz) ±0.50 dB ■ Gain matching (limit) 7V to 12V ■ Supply voltage range 1500 V/μs ■ Slew rate (inverting) 11 mA ■ Supply current (no load) ±60 mA ■ Linear output current ±2.4V ■ Output voltage swing 4.4 nV/√Hz ■ Input noise voltage 2.6 pA/√Hz ■ Input noise current −45 dBc ■ THD (20 MHz, RL = 100Ω, VO = 2 VPP) Applications ■ ■ ■ ■ Variable attenuator AGC Voltage controlled filter Video imaging processing Typical Application 20171002 20171011 AVMAX = 9.4 V/V Gain vs. VG © 2007 National Semiconductor Corporation 201710 www.national.com LMH6505 Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier December 14, 2007 LMH6505 Junction Temperature Soldering Information: Infrared or Convection (20 sec) Wave Soldering (10 sec) Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 6) Human Body Model Machine Model Input Current Output Current (Note 3) Supply Voltages (V+ - V−) Voltage at Input/ Output pins Storage Temperature Range Operating Ratings 2000V 200V ±10 mA 120 mA 12.6V V+ +0.8V, V− −0.8V −65°C to 150°C Electrical Characteristics 235°C 260°C (Note 1) Supply Voltages (V+ - V−) Temperature Range (Note 5) Thermal Resistance: 8 -Pin SOIC 8-Pin MSOP 150°C 7V to 12V −40°C to +85°C (θJC) 60 65 (θJA) 165 235 (Note 2) Unless otherwise specified, all limits are guaranteed for TJ = 25°C, VS = ±5V, AVMAX = 9.4 V/V, RF = 1 kΩ, RG = 100Ω, VIN = ±0.1V, RL = 100Ω, VG = +2V. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 9) Typ (Note 8) Max (Note 9) Units Frequency Domain Response BW GF −3 dB Bandwidth Gain Flatness VOUT < 1 VPP 150 VOUT < 4 VPP, AVMAX = 100 38 VOUT < 1 VPP 40 MHz MHz 0.9V ≤ VG ≤ 2V, ±0.2 dB Att Range Flat Band (Relative to Max Gain) Attenuation Range (Note 15) ±0.2 dB Flatness, f < 30 MHz 26 ±0.1 dB Flatness, f < 30 MHz 9.5 BW Control Gain control Bandwidth VG = 1V (Note 4) 100 MHz CT (dB) Feed-through VG = 0V, 30 MHz (Output/Input) −51 dB GR Gain Adjustment Range f < 10 MHz 80 f < 30 MHz 71 0.5V Step 2.1 ns 10 % dB dB Time Domain Response tr, tf Rise and Fall Time OS % Overshoot SR Slew Rate (Note 7) Non Inverting 900 Inverting 1500 2VPP, 20 MHz −47 V/μs Distortion & Noise Performance HD2 2nd Harmonic Distortion HD3 3rd Harmonic Distortion –61 THD Total Harmonic Distortion −45 En tot Total Equivalent Input Noise f > 1 MHz, RSOURCE = 50Ω IN Input Noise Current DG Differential Gain DP Differential Phase dBc 4.4 nV/ f > 1 MHz 2.6 pA/ f = 4.43 MHz, RL = 100Ω 0.30 % 0.15 deg DC & Miscellaneous Performance GACCU G Match K Gain Accuracy (See Application Information) VG = 2.0V 0 ±0.50 +0.1/−0.53 +4.3/−3.9 Gain Matching (See Application Information) VG = 2.0V — ±0.50 0.8V < VG < 2V — +4.2/−4.0 0.940 0.990 1.04 0.8V < VG < 2V Gain Multiplier (See Application Information) www.national.com 0.890 0.830 2 dB dB V/V VIN NL Parameter Input Voltage Range VIN L Conditions Min (Note 9) Typ (Note 8) RG = 100Ω ±0.60 ±0.50 ±0.74 V ±6.0 ±5.0 ±7.4 mA RG Open Max (Note 9) Units ±3 I RG_MAX RG Current Pin 3 IBIAS Bias Current Pin 2 (Note 10) −0.6 TC IBIAS Bias Current Drift Pin 2 (Note 11) 1.28 nA/°C RIN Input Resistance Pin 2 7 MΩ CIN Input Capacitance Pin 2 2.8 pF IVG VG Bias Current Pin 1, VG = 2V (Note 10) 0.9 µA TC IVG VG Bias Drift Pin 1 (Note 11) 10 pA/°C R VG VG Input Resistance Pin 1 25 MΩ C VG VG Input Capacitance Pin 1 2.8 pF VOUT L Output Voltage Range RL = 100Ω VOUT NL ±2.1 ±1.9 RL = Open −2.5 −2.6 µA ±2.4 V ±3.1 0.12 Ω ±80 mA ROUT Output Impedance DC IOUT Output Current VOUT = ±4V from Rails VO OFFSET Output Offset Voltage 0V < VG < 2V +PSRR +Power Supply Rejection Ratio (Note 12) Input Referred, 1V change, VG = 2.2V –65 –72 −PSRR −Power Supply Rejection Ratio (Note 12) Input Referred, 1V change, VG = 2.2V –65 –75 IS Supply Current No Load 9.5 7.5 11 ±60 ±40 ±10 ±55 ±70 mV dB dB 14 16 mA Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics. Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the Electrical Tables under conditions of internal self-heating where TJ > TA. Note 3: The maximum output current (IOUT) is determined by device power dissipation limitations or value specified, whichever is lower. Note 4: Gain control frequency response schematic: 20171016 Note 5: The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board. Note 6: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC). 3 www.national.com LMH6505 Symbol LMH6505 Note 7: Slew rate is the average of the rising and falling slew rates. Note 8: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material. Note 9: Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality Control (SQC) method. Note 10: Positive current corresponds to current flowing into the device. Note 11: Drift is determined by dividing the change in parameter distribution at temperature extremes by the total temperature change. Note 12: +PSRR definition: [|ΔVOUT/ΔV+| / AV], −PSRR definition: [|ΔVOUT/ΔV−| / AV] with 0.1V input voltage. ΔVOUT is the change in output voltage with offset shift subtracted out. Note 13: Gain/Phase normalized to low frequency value at 25°C. Note 14: Gain/Phase normalized to low frequency value at each setting. Note 15: Flat Band Attenuation (Relative To Max Gain) Range Definition: Specified as the attenuation range from maximum which allows gain flatness specified (either ±0.2 dB or ±0.1 dB), relative to AVMAX gain. For example, for f < 30 MHz, here are the Flat Band Attenuation ranges: ±0.2 dB: 19.7 dB down to -6.3 dB = 26 dB range ±0.1 dB: 19.7 dB down to 10.2 dB = 9.5 dB range Connection Diagram 8-Pin SOIC/MSOP 20171001 Top View Ordering Information Package 8-Pin SOIC 8-Pin MSOP www.national.com Part Number LMH6505MA LMH6505MAX LMH6505MM LMH6505MMX Package Marking Transport Media 95 Units/Rail LMH6505MA 2.5k Units Tape and Reel 1k Units Tape and Reel AZ2A 3.5k Units Tape and Reel 4 NSC Drawing M08A MUA08A LMH6505 Typical Performance Characteristics Unless otherwise specified: VS = ±5V, TA = 25°C, VG = VGMAX, RF = 1 kΩ, RG = 100Ω, VIN = 0.1V, input terminated in 50Ω. RL = 100Ω, Typical values. Frequency Response Over Temperature Frequency Response for Various VG 20171003 20171004 Frequency Response (AVMAX = 2) Inverting Frequency Response 20171044 20171046 Frequency Response for Various VG (AVMAX = 100) (Large Signal) Frequency Response for Various Amplitudes 20171064 20171045 5 www.national.com LMH6505 Gain Control Frequency Response IS vs. VS 20171033 20171021 IS vs. VS Input Bias Current vs. VS 20171022 20171020 PSRR AVMAX vs. Supply Voltage 20171034 www.national.com 20171023 6 Gain Variation Over entire Temp Range vs. VG 20171012 20171041 IRG vs. VIN Gain vs. VG 20171011 20171018 Output Offset Voltage vs. VG (Typical Unit #1) Output Offset Voltage vs. VG (Typical Unit #2) 20171030 20171025 7 www.national.com LMH6505 Feed through Isolation for Various AVMAX LMH6505 Output Offset Voltage vs. VG (Typical Unit #3) Distribution of Output Offset Voltage 20171061 20171028 Output Noise Density vs. Frequency Output Noise Density vs. Frequency 20171008 20171038 Output Noise Density vs. Frequency Input Referred Noise Density vs. Frequency 20171037 www.national.com 20171036 8 Output Voltage vs. Output Current (Sourcing) 20171065 20171031 Distortion vs. Frequency HD vs. POUT 20171042 20171043 THD vs. POUT THD vs. POUT 20171010 20171009 9 www.national.com LMH6505 Output Voltage vs. Output Current (Sinking) LMH6505 THD vs. Gain THD vs. Gain 20171039 20171040 Differential Gain & Phase VG Bias Current vs. VG 20171035 20171014 Step Response Plot Step Response Plot 20171015 www.national.com 20171017 10 LMH6505 Gain vs. VG Step 20171032 SETTING THE LMH6505 MAXIMUM GAIN Application Information GENERAL DESCRIPTION The key features of the LMH6505 are: • Low power • Broad voltage controlled gain and attenuation range (from AVMAX down to complete cutoff) • Bandwidth independent, resistor programmable gain range (RG) • Broad signal and gain control bandwidths • Frequency response may be adjusted with RF • High impedance signal and gain control inputs The LMH6505 combines a closed loop input buffer (“X1” Block in Figure 1), a voltage controlled variable gain cell (“MULT” Block) and an output amplifier (“CFA” Block). The input buffer is a transconductance stage whose gain is set by the gain setting resistor, RG. The output amplifier is a current feedback op amp and is configured as a transimpedance stage whose gain is set by, and is equal to, the feedback resistor, RF. The maximum gain, AVMAX, of the LMH6505 is defined by the ratio: K · RF/RG where “K” is the gain multiplier with a nominal value of 0.940. As the gain control input (VG) changes over its 0 to 2V range, the gain is adjusted over a range of about 80 dB relative to the maximum set gain. (1) Although the LMH6505 is specified at AVMAX = 9.4 V/V, the recommended AVMAX varies between 2 and 100. Higher gains are possible but usually impractical due to output offsets, noise and distortion. When varying AVMAX several tradeoffs are made: RG: determines the input voltage range RF: determines overall bandwidth The amount of current which the input buffer can source/sink into RG is limited and is given in the IRG_MAX specification. This sets the maximum input voltage: (2) As the IRG_MAX limit is approached with increasing the input voltage or with the lowering of RG, the device's harmonic distortion will increase. Changes in RF will have a dramatic effect on the small signal bandwidth. The output amplifier of the LMH6505 is a current feedback amplifier (CFA) and its bandwidth is determined by RF. As with any CFA, doubling the feedback resistor will roughly cut the bandwidth of the device in half. For more about CFAs, see the basic tutorial, OA-20, “Current Feedback Myths Debunked,” or a more rigorous analysis, OA-13, “Current Feedback Amplifier Loop Gain Analysis and Performance Enhancements.” OTHER CONFIGURATIONS 1) Single Supply Operation The LMH6505 can be configured for use in a single supply environment. Doing so requires the following: a) Bias pin 4 and RG to a “virtual half supply” somewhere close to the middle of V+ and V− range. The other end of RG is tied to pin 3. The “virtual half supply” needs to be capable of sinking and sourcing the expected current flow through RG. b) Ensure that VG can be adjusted from 0V to 2V above the “virtual half supply”. c) Bias the input (pin 2) to make sure that it stays within the range of 2V above V− to 2V below V+. See the Input Voltage Range specification in the Electrical Characteristics table. This can be accomplished by either DC biasing the 20171047 FIGURE 1. LMH6505 Typical Application and Block Diagram 11 www.national.com LMH6505 input and AC coupling the input signal, or alternatively, by direct coupling if the output of the driving stage is also biased to half supply. Arranged this way, the LMH6505 will respond to the current flowing through RG. The gain control relationship will be similar to the split supply arrangement with VG measured with reference to pin 4. Keep in mind that the circuit described above will also center the output voltage to the “virtual half supply voltage.” 2) Arbitrarily Referenced Input Signal Having a wide input voltage range on the input (pin 2) (±3V typical), the LMH6505 can be configured to control the gain on signals which are not referenced to ground (e.g. Half Supply biased circuits). This node will be called the “reference node”. In such cases, the other end of RG which is the side not tied to pin 3 can be tied to this reference node so that RG will “look at” the difference between the signal and this reference only. Keep in mind that the reference node needs to source and sink the current flowing through RG. 20171051 FIGURE 2. LMH6505 Gain Accuracy & Gain Matching Defined GAIN ACCURACY Gain accuracy is defined as the actual gain compared against the theoretical gain at a certain VG, the results of which are expressed in dB. (See Figure 2). Theoretical gain is given by: GAIN PARTITIONING If high levels of gain are needed, gain partitioning should be considered: (3) Where K = 0.940 (nominal) N = 1.01V & VC = 79 mV at room temperature For a VG range, the value specified in the tables represents the worst case accuracy over the entire range. The "Typical" value would be the difference between the "Typical Gain" and the "Theoretical Gain." The "Max" value would be the worst case difference between the actual gain and the "Theoretical Gain" for the entire population. 20171052 GAIN MATCHING As Figure 2 shows, gain matching is the limit on gain variation at a certain VG, expressed in dB, and is specified as "±Max" only. There is no "Typical." For a VG range, the value specified represents the worst case matching over the entire range. The "Max" value would be the worst case difference between the actual gain and the typical gain for the entire population. FIGURE 3. Gain Partitioning The maximum gain range for this circuit is given by the following equation: (4) The LMH6624 is a low noise wideband voltage feedback amplifier. Setting R2 at 909Ω and R1 at 100Ω produces a gain of 20 dB. Setting RF at 1000Ω as recommended and RG at 50Ω, produces a gain of about 26 dB in the LMH6505. The total gain of this circuit is therefore approximately 46 dB. It is important to understand that when partitioning to obtain high levels of gain, very small signal levels will drive the amplifiers to full scale output. For example, with 46 dB of gain, a 20 mV signal at the input will drive the output of the LMH6624 to 200 mV and the output of the LMH6505 to 4V. Accordingly, the designer must carefully consider the contributions of each stage to the overall characteristics. Through gain partitioning the designer is provided with an opportunity to optimize the frequency response, noise, distortion, settling time, and loading effects of each amplifier to achieve improved overall performance. www.national.com 12 AVOIDING OVERDRIVE OF THE LMH6505 GAIN CONTROL INPUT There is an additional requirement for the LMH6505 Gain Control Input (VG): VG must not exceed +2.3V (with ±5V supplies). The gain control circuitry may saturate and the gain may actually be reduced. In applications where VG is being driven from a DAC, this can easily be addressed in the software. If there is a linear loop driving VG, such as an AGC loop, other methods of limiting the input voltage should be implemented. One simple solution is to place a 2.2:1 resistive divider on the VG input. If the device driving this divider is operating off of ±5V supplies as well, its output will not exceed 5V and through the divider VG can not exceed 2.3V. LMH6505 GAIN CONTROL FUNCTION In the plot, Gain vs. VG, we can see the gain as a function of the control voltage. The “Gain (V/V)” plot, sometimes referred to as the S-curve, is the linear (V/V) gain. This is a hyperbolic tangent relationship and is given by Equation 3. The “Gain (dB)” plots the gain in dB and is linear over a wide range of gains. Because of this, the LMH6505 gain control is referred to as “linear-in-dB.” For applications where the LMH6505 will be used at the heart of a closed loop AGC circuit, the S-curve control characteristic provides a broad linear (in dB) control range with soft limiting at the highest gains where large changes in control voltage result in small changes in gain. For applications requiring a fully linear (in dB) control characteristic, use the LMH6505 at half gain and below (VG ≤ 1V). IMPROVING THE LMH6505 LARGE SIGNAL PERFORMANCE Figure 5 illustrates an inverting gain scheme for the LMH6505. GAIN STABILITY The LMH6505 architecture allows complete attenuation of the output signal from full gain to complete cutoff. This is achieved by having the gain control signal VG “throttle” the signal which gets through to the final stage and which results in the output signal. As a consequence, the RG pin's (pin 3) average current (DC current) influences the operating point of this “throttle” circuit and affects the LMH6505's gain slightly. Figure 4 below, shows this effect as a function of the gain set by VG. 20171054 FIGURE 5. Inverting Amplifier The input signal is applied through the RG resistor. The VIN pin should be grounded through a 25Ω resistor. The maximum gain range of this configuration is given in the following equation: (5) The inverting slew rate of the LMH6505 is much higher than that of the non-inverting slew rate. This ≈ 2X performance improvement comes about because in the non-inverting configuration the slew rate of the overall amplifier is limited by the input buffer. In the inverting circuit, the input buffer remains at a fixed voltage and does not affect slew rate. 20171066 FIGURE 4. LMH6505 Gain Variation over RG DC Current Capability vs. Gain TRANSMISSION LINE MATCHING One method for matching the characteristic impedance of a transmission line is to place the appropriate resistor at the input or output of the amplifier. Figure 6 shows a typical circuit configuration for matching transmission lines. This plot shows the expected gain variation for the maximum RG DC current capability (±4.5 mA). For example, with gain (AV) set to −60 dB, if the RG pin DC current is increased to 4.5 mA sourcing, one would expect to see the gain increase by about 3 dB (to −57 dB). Conversely, 4.5 mA DC sinking cur13 www.national.com LMH6505 rent through RG would increase gain by 1.75 dB (to −58.25 dB). As you can see from Figure 4 above, the effect is most pronounced with reduced gain and is limited to less than 3.75 dB variation maximum. If the application is expected to experience RG DC current variation and the LMH6505 gain variation is beyond acceptable limits, please refer to the LMH6502 (Differential Linear in dB variable gain amplifier) datasheet instead at http:// www.national.com/ds/LM/LMH6502.pdf. LMH6505 GAIN CONTROL RANGE AND MINIMUM GAIN Before discussing Gain Control Range, it is important to understand the issues which limit it. The minimum gain of the LMH6505 is theoretically zero, but in practical circuits it is limited by the amount of feedthrough, here defined as the gain when VG = 0V. Capacitive coupling through the board and package, as well as coupling through the supplies, will determine the amount of feedthrough. Even at DC, the input signal will not be completely rejected. At high frequencies feedthrough will get worse because of its capacitive nature. At frequencies below 10 MHz, the feed through will be less than −60 dB and therefore, it can be said that with AVMAX = 20 dB, the gain control range is 80 dB. LMH6505 20171056 FIGURE 6. Transmission Line Matching The resistors RS, RI, RO, and RT are equal to the characteristic impedance, ZO, of the transmission line or cable. Use CO to match the output transmission line over a greater frequency range. It compensates for the increase of the op amp’s output impedance with frequency. ADJUSTING OFFSETS AND DC LEVEL SHIFTING Offsets can be broken into two parts: an input-referred term and an output-referred term. These errors can be trimmed using the circuit in Figure 7. First set VG to 0V and adjust the trim pot R4 to null the offset voltage at the output. This will eliminate the output stage offsets. Next set VG to 2V and adjust the trim pot R1 to null the offset voltage at the output. This will eliminate the input stage offsets. MINIMIZING PARASITIC EFFECTS ON SMALL SIGNAL BANDWIDTH The best way to minimize parasitic effects is to use surface mount components and to minimize lead lengths and component distance from the LMH6505. For designs utilizing through-hole components, specifically axial resistors, resistor self-capacitance should be considered. For example, the average magnitude of parasitic capacitance of RN55D 1% metal film resistors is about 0.15 pF with variations of as much as 0.1 pF between lots. Given the LMH6505’s extended bandwidth, these small parasitic reactance variations can cause measurable frequency response variations in the highest octave. We therefore recommend the use of surface mount resistors to minimize these parasitic reactance effects. RECOMMENDATIONS Here are some recommendations to avoid problems and to get the best performance: • Do not place a capacitor across RF. However, an appropriately chosen series RC combination can be used to shape the frequency response. • Keep traces connecting RF separated and as short as possible. • Place a small resistor (20-50Ω) between the output and CL. • Cut away the ground plane, if any, under RG. • Keep decoupling capacitors as close as possible to the LMH6505. • Connect pin 2 through a minimum resistance of 25Ω. www.national.com 20171057 FIGURE 7. Offset Adjust Circuit DIGITAL GAIN CONTROL Digitally variable gain control can be easily realized by driving the LMH6505 gain control input with a digital-to-analog converter (DAC). Figure 8 illustrates such an application. This circuit employs National Semiconductor’s eight-bit DAC0830, the LMC8101 MOS input op amp (Rail-to-Rail Input/Output), and the LMH6505 VGA. With VREF set to 2V, the circuit provides up to 80 dB of gain control in 256 steps with up to 0.05% full scale resolution. The maximum gain of this circuit is 20 dB. 14 20171058 FIGURE 8. Digital Gain Control USING THE LMH6505 IN AGC APPLICATIONS In AGC applications, the control loop forces the LMH6505 to have a fixed output amplitude. The input amplitude will vary over a wide range and this can be the issue that limits dynamic range. At high input amplitudes, the distortion due to the input buffer driving RG may exceed that which is produced by the output amplifier driving the load. In the plot, THD vs. Gain, total harmonic distortion (THD) is plotted over a gain range of nearly 35 dB for a fixed output amplitude of 0.25 VPP in the specified configuration, RF = 1 kΩ, RG = 100Ω. When the gain is adjusted to −15 dB (i.e. 35 dB down from AVMAX), the input AUTOMATIC GAIN CONTROL (AGC) Fast Response AGC Loop The AGC circuit shown in Figure 9 will correct a 6 dB input amplitude step in 100 ns. The circuit includes a two op amp precision rectifier amplitude detector (U1 and U2), and an integrator (U3) to provide high loop gain at low frequencies. The output amplitude is set by R9. The following are some suggestions for building fast AGC loops: Precision rectifiers work best with large output signals. Accuracy is improved by blocking DC offsets, as shown in Figure 9. 20171059 FIGURE 9. Automatic Gain Control Circuit 15 www.national.com LMH6505 amplitude would be 1.41 VPP and we can see the distortion is at its worst at this gain. If the output amplitude of the AGC were to be raised above 0.25 VPP, the input amplitudes for gains 40 dB down from AVMAX would be even higher and the distortion would degrade further. It is for this reason that we recommend lower output amplitudes if wide gain ranges are desired. Using a post-amp like the LMH6714/LMH6720/ LMH6722 family or the LMH6702 would be the best way to preserve dynamic range and yield output amplitudes much higher than 100 mVPP. Another way of addressing distortion performance and its limitations on dynamic range, would be to raise the value of RG. Just like any other high-speed amplifier, by increasing the load resistance, and therefore decreasing the demanded load current, the distortion performance will be improved in most cases. With an increased RG, RF will also have to be increased to keep the same AVMAX and this will decrease the overall bandwidth. It may be possible to insert a series RC combination across RF in order to counteract the negative effect on BW when a large RF is used. LMH6505 Signal frequencies must not reach the gain control port of the LMH6505, or the output signal will be distorted (modulated by itself). A fast settling AGC needs additional filtering beyond the integrator stage to block signal frequencies. This is provided in Figure 9 by a simple R-C filter (R10 and C3); better distortion performance can be achieved with a more complex filter. These filters should be scaled with the input signal frequency. Loops with slower response time, which means longer integration time constants, may not need the R10 – C3 filter. Checking the loop stability can be done by monitoring the VG voltage while applying a step change in input signal amplitude. Changing the input signal amplitude can be easily done with an arbitrary waveform generator. The LMH6505 is fully stable when driving a 100Ω load. With reduced load (e.g. 1k.) there is a possibility of instability at very high frequencies beyond 400 MHz especially with a capacitive load. When the LMH6505 is connected to a light load as such, it is recommended to add a snubber network to the output (e.g. 100Ω and 39 pF in series tied between the LMH6505 output and ground). CL can also be isolated from the output by placing a small resistor in series with the output (pin 6). Component parasitics also influence high frequency results. Therefore it is recommended to use metal film resistors such as RN55D or leadless components such as surface mount devices. High profile sockets are not recommended. National Semiconductor suggests the following evaluation board as a guide for high frequency layout and as an aid in device testing and characterization: CIRCUIT LAYOUT CONSIDERATIONS & EVALUATION BOARDS A good high frequency PCB layout including ground plane construction and power supply bypassing close to the package is critical to achieving full performance. The amplifier is sensitive to stray capacitance to ground at the I- input (pin 7) so it is best to keep the node trace area small. Shunt capacitance across the feedback resistor should not be used to compensate for this effect. Capacitance to ground should be minimized by removing the ground plane from under the body of RG. Parasitic or load capacitance directly on the output (pin 6) degrades phase margin leading to frequency response peaking. www.national.com Device Package LMH6505 SOIC Evaluation Board Part Number LMH730066 The evaluation board can be shipped when a device sample request is placed with National Semiconductor. Evaluation board documentation can be found in the LMH6505 product folder at www.National.com. 16 LMH6505 Physical Dimensions inches (millimeters) unless otherwise noted 8-Pin SOIC NS Package Number M08A 8-Pin MSOP NS Package Number MUA08A 17 www.national.com LMH6505 Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier Notes For more National Semiconductor product information and proven design tools, visit the following Web sites at: Products Design Support Amplifiers www.national.com/amplifiers WEBENCH www.national.com/webench Audio www.national.com/audio Analog University www.national.com/AU Clock Conditioners www.national.com/timing App Notes www.national.com/appnotes Data Converters www.national.com/adc Distributors www.national.com/contacts Displays www.national.com/displays Green Compliance www.national.com/quality/green Ethernet www.national.com/ethernet Packaging www.national.com/packaging Interface www.national.com/interface Quality and Reliability www.national.com/quality LVDS www.national.com/lvds Reference Designs www.national.com/refdesigns Power Management www.national.com/power Feedback www.national.com/feedback Switching Regulators www.national.com/switchers LDOs www.national.com/ldo LED Lighting www.national.com/led PowerWise www.national.com/powerwise Serial Digital Interface (SDI) www.national.com/sdi Temperature Sensors www.national.com/tempsensors Wireless (PLL/VCO) www.national.com/wireless THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS, IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS. EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness. National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. Copyright© 2007 National Semiconductor Corporation For the most current product information visit us at www.national.com National Semiconductor Americas Customer Support Center Email: [email protected] Tel: 1-800-272-9959 www.national.com National Semiconductor Europe Customer Support Center Fax: +49 (0) 180-530-85-86 Email: [email protected] Deutsch Tel: +49 (0) 69 9508 6208 English Tel: +49 (0) 870 24 0 2171 Français Tel: +33 (0) 1 41 91 8790 National Semiconductor Asia Pacific Customer Support Center Email: [email protected] National Semiconductor Japan Customer Support Center Fax: 81-3-5639-7507 Email: [email protected] Tel: 81-3-5639-7560