PolarTM Power MOSFET HiperFETTM IXFK220N15P IXFX220N15P VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 150V 220A Ω 9mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C (Chip Capability) 220 A ILRMS IDM Leads Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM 160 600 A A IA TC = 25°C 50 A EAS TC = 25°C 3 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns PD TC = 25°C 1250 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D S Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 150 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 DC-DC Converters Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications z z TJ = 150°C © 2011 IXYS CORPORATION, All Rights Reserved V 4.5 V ±200 nA 50 μA 1.5 mA 9 mΩ DS100017A(01/11) IXFK220N15P IXFX220N15P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 85 S 15.4 nF 3040 pF 35 pF 35 ns 28 ns 56 ns 17 ns Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) 162 nC 58 nC 56 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.12 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 220 A ISM Repetitive, Pulse Width Limited by TJM 800 A VSD IF = 110A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 110A, -di/dt = 150A/μs Note Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Dim. Qg(on) Qgs TO-264 Outline 1.32 18.8 VR = 75V, VGS = 0V A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. Inches Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline 200 ns μC A 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK220N15P IXFX220N15P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 220 350 VGS = 15V 10V 9V 200 180 160 8V 250 ID - Amperes ID - Amperes VGS = 15V 10V 9V 300 140 120 7V 100 80 8V 200 150 7V 100 60 6V 40 50 20 6V 5V 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 6 7 8 9 10 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 220 3.2 VGS = 15V 10V 9V 8V 200 180 VGS = 10V 2.8 R DS(on) - Normalized 160 ID - Amperes 5 VDS - Volts VDS - Volts 140 7V 120 100 6V 80 60 40 I D = 220A 2.0 I D = 110A 1.6 1.2 0.8 5V 20 2.4 0 0.4 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 180 3.2 External Lead Current Limit VGS = 10V 15V - - - - - 140 TJ = 175ºC 2.4 ID - Amperes R DS(on) - Normalized 2.8 160 2.0 1.6 120 100 80 60 40 TJ = 25ºC 1.2 20 0.8 0 0 50 100 150 200 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXFK220N15P IXFX220N15P Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 TJ = - 40ºC 180 120 160 TJ = 150ºC 25ºC - 40ºC 120 g f s - Siemens ID - Amperes 25ºC 100 140 100 80 60 80 150ºC 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 10 350 VDS = 75V 9 300 I D = 110A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 TJ = 150ºC 100 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 20 40 60 VSD - Volts 80 100 120 140 160 180 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 f = 1 MHz RDS(on) Limit 25µs 10,000 100µs 100 Coss 1,000 External Lead Limit ID - Amperes Capacitance - PicoFarads Cisss 1ms 10 100 TJ = 175ºC Crss TC = 25ºC Single Pulse 10 10ms DC 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK220N15P IXFX220N15P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th )JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_220N15P(93)01-07-11-A