APA2N70K RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic S ▼ Simple Drive Requirement D SOT-223 BVDSS 600V RDS(ON) 10Ω ID 0.35A G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. G S The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 package. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ 4 Continuous Drain Current, VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2 Rating Units 600 V +30 V 0.35 A 1.4 A 2.7 W 0.5 mJ 1 A EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 4 Value Unit 45 ℃/W 1 201201163 APA2N70K Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. 600 - - V VGS=10V, ID=0.35A - - 10 Ω VGS=0V, ID=1mA 3 Max. Units RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=0.2A - 0.4 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70 C) VDS=480V, VGS=0V - - 250 uA Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=0.2A - 5.5 - nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=540V - 1.9 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.5 - nC VDS=300V - 7.7 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=0.2A - 3.6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 24 - ns tf Fall Time RD=1500Ω - 44 - ns Ciss Input Capacitance VGS=0V - 286 - pF Coss Output Capacitance VDS=25V - 25 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Min. Typ. - - Source-Drain Diode Symbol VSD Parameter 3 Forward On Voltage Test Conditions Tj=25℃, IS=0.2A, VGS=0V Max. Units 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=1A. 3.Pulse test 4.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 APA2N70K 0.8 1 T A =25 o C 0.6 ID , Drain Current (A) ID , Drain Current (A) 0.75 10V 5.0V 4.5V T A =150 o C 10V 5.5V 5.0V 0.5 4.5V 0.4 V GS =4.0V 0.2 0.25 V GS =4.0V 0 0 0 3 6 9 12 0 V DS , Drain-to-Source Voltage (V) 6 12 18 24 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.8 1.2 I D =0.2A V GS =10V 2.4 1.1 Normalized R DS(ON) Normalized BVDSS (V) 2 1 1.6 1.2 0.8 0.9 0.4 0.8 0 -50 0 50 T j , Junction Temperature ( 100 o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 150 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 0.24 1.6 0.18 1.2 PD (W) ID , Drain Current (A) APA2N70K 0.12 0.8 0.4 0.06 0 0 25 50 75 100 T c , Case Temperature ( 125 o 0 150 50 C) 100 Tc, Case Temperature ( Fig 5. Maximum Drain Current v.s. 150 o C) Fig 6. Typical Power Dissipation Case Temperature 1 10 Normalized Thermal Response (R thja) Duty Factor=0.5 1 Operation in this area limited by RDS(ON) ID (A) 1ms 0.1 10ms 100ms 0.01 1S T A =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthja+ Ta Rthja = 120℃/W DC 0.001 0.001 0.1 1 10 100 1000 V DS (V) Fig 7. Maximum Safe Operating Area 10000 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance 4 APA2N70K f=1.0MHz 1000 12 Ciss I D =0.2A V DS =540V 100 C (pF) VGS , Gate to Source Voltage (V) 16 8 Coss 10 4 Crss 0 1 0 2 4 6 8 1 10 19 28 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 4 1 3.5 T j = 150 o C VGS(th) (V) IS (A) 0.1 T j = 25 o C 3 0.01 2.5 0.001 2 0 0.3 0.6 0.9 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5 APA2N70K VDS 90% RD VDS D 0.44 x RATED G RG TO THE OSCILLOSCOPE 10% + S 10 V VGS VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 10V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Q Fig 16. Gate Charge Waveform 6