ETL MUN5212DW1T1 Dual bias resistortransistor Datasheet

Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
MUN5211DW1T1
Series
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
6
5
4
1
2
3
SOT-363
CASE 419B STYLE1
6
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value
Unit
Collector-Base Voltage
V CBO
50
Vdc
Collector-Emitter Voltage
V CEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
PD
187 (Note 1.)
mW
256
(Note
2.)
T A = 25°C
1.5 (Note 1.)
mW/°C
Derate above 25°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T A = 25°C
Derate above 25°C
R θJA
Symbol
PD
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
R θJA
Junction and Storage
Temperature
T J , T stg
1. FR–4 @ Minimum Pad
R θJL
670 (Note 1.)
490 (Note 2.)
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
°C/W
5
4
R1
Q2
R2
Q1
R2
R1
1
3
2
MARKING DIAGRAM
6
5
4
7X
1
2
3
7X = Device Marking
= (See Page 2)
Unit
mW
mW/°C
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
°C/W
–55 to +150
°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
°C/W
2. FR–4 @ 1.0 x 1.0 inch Pad
MUN5211dw–1/8
MUN5211DW1T1
8 8
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R 1(K)
R 2(K)
MUN5211DW1T1
SOT–363
7A
10
10
MUN5212DW1T1
SOT–363
7B
22
22
MUN5213DW1T1
SOT–363
7C
47
47
MUN5214DW1T1
SOT–363
7D
10
47
MUN5215DW1T1 (Note 3.)
SOT–363
7E
10
MUN5216DW1T1 (Note 3.)
SOT–363
7F
4.7
MUN5230DW1T1 (Note 3.)
SOT–363
7G
1.0
1.0
MUN5231DW1T1 (Note 3.)
SOT–363
7H
2.2
2.2
MUN5232DW1T1 (Note 3.)
SOT–363
7J
4.7
4.7
MUN5233DW1T1 (Note 3.)
SOT–363
7K
4.7
47
MUN5234DW1T1 (Note 3.)
SOT–363
7L
22
47
MUN5235DW1T1 (Note 3.)
SOT–363
7M
2.2
47
MUN5236DW1T1 (Note 3.)
SOT–363
7N
100
100
MUN5237DW1T1 (Note 3.)
SOT–363
7P
47
22
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V CB = 50 V, I E = 0)
I CBO
–
–
Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0)
I CEO
–
–
I
–
–
Emitter-Base Cutoff Current
MUN5211DW1T1
EBO
–
–
(V EB = 6.0 V, I C = 0)
MUN5212DW1T1
–
–
MUN5213DW1T1
–
–
MUN5214DW1T1
–
–
MUN5215DW1T1
–
–
MUN5216DW1T1
–
–
MUN5230DW1T1
–
–
MUN5231DW1T1
–
–
MUN5232DW1T1
–
–
MUN5233DW1T1
–
–
MUN5234DW1T1
–
–
MUN5235DW1T1
–
–
MUN5236DW1T1
–
–
MUN5237DW1T1
Collector-Base Breakdown Voltage (I C = 10 µA, I E = 0)
V (BR)CBO
50
–
Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) V (BR)CEO
50
–
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Series
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Max
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
–
–
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
MUN5211dw–2/8
MUN5211DW1T1
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,)
Characteristic
Symbol
ON CHARACTERISTICS(Note 5.)
h FE
DC Current Gain
MUN5211DW1T1
(V CE = 10 V, I C = 5.0 mA)
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5235DW1T1
MUN5235DW1T1
Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat)
(I C= 10mA, I B= 5mA) MUN5230DW1T1/MUN5231DW1T1
(I C= 10mA, IB= 1mA) MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
V OL
Output Voltage (on)
MUN5211DW1T1
(V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ)
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
(V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ)
MUN5213DW1T1
(V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ)
MUN5236DW1T1
(V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ)
MUN5237DW1T1
Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ)
V OH
(V CC = 5.0 V, V B = 0.05 V, R L = 1.0 kΩ)
MUN5230DW1T1
(V CC = 5.0 V, V B = 0.25 V, R L = 1.0 kΩ)
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
(Continued)
Min
Typ
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
–
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4.9
–
Max
Series
Unit
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
–
Vdc
Vdc
Vdc
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
MUN5211dw–3/8
MUN5211DW1T1
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS(Note 6.)
Input Resistor
Resistor Ratio
MUN5211DW1T1
R1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
MUN5211DW1T1/MUN5212DW1T1/ R 1 /R 2
MUN5213DW1T1/MUN5236DW1T1
MUN5214DW1T1
MUN5215DW1T1/MUN5216DW1T1
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5237DW1T1
Max
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
Series
Unit
kΩ
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
P D , POWER DISSIPATION (mW)
300
250
200
150
100
833°C
50
0
–50
0
50
100
150
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
MUN5211dw–4/8
MUN5211DW1T1
Series
1
0.1
0.01
0.001
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5211DW1T1
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
Figure 3. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
3
2
1
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
MUN5211dw–5/8
MUN5211DW1T1
Series
10
1
0.1
0.01
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5212DW1T1
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
Figure 8. DC Current Gain
100
I C , COLLECTOR CURRENT (mA)
4
3
2
1
10
1
0.1
0.01
0.001
0
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input oltage
10
100
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
10
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
MUN5211dw–6/8
MUN5211DW1T1
Series
10
1
0.1
0.01
0
20
40
50
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5213DW1T1
100
10
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
Figure 13. DC Current Gain
1
I C , COLLECTOR CURRENT (mA)
100
0.8
0.6
0.4
0.2
10
1
0.1
0.01
0.001
0
0
10
20
30
40
0
50
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input oltage
10
100
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
1000
10
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
MUN5211dw–7/8
MUN5211DW1T1
Series
1
0.1
0.01
0.001
0
20
40
60
80
h FE , DC CURRENT GAIN (NORMALIZED)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5214DW1T1
250
200
150
100
50
0
1
2
3
4
5
10
15
20
40
50
60 70
80
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
Figure 18. DC Current Gain
4
90 100
I C , COLLECTOR CURRENT (mA)
100
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
50
10
1
0
1
2
3
4
5
6
7
8
9
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input oltage
10
10
V in , INPUT VOLTAGE (VOLTS)
C ob CAPACITANCE (pF)
300
1
0.1
0
10
20
30
40
50
I C ,COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
MUN5211dw–8/8
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