IRF IRF8734PBF Synchronous mosfet for notebook processor power Datasheet

PD - 96226
IRF8734PbF
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead-Free
VDSS
RDS(on) max
Qg (typ.)
30V 3.5m @VGS = 10V 20nC
:
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Absolute Maximum Ratings
Max.
Parameter
VDS
Drain-to-Source Voltage
30
VGS
± 20
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
17
Pulsed Drain Current
168
IDM
PD @TA = 25°C
PD @TA = 70°C
f
Power Dissipation f
Units
V
21
c
A
2.5
Power Dissipation
W
1.6
Linear Derating Factor
0.02
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
W/°C
°C
Thermal Resistance
Parameter
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient
Notes  through
f
g
Typ.
Max.
–––
20
–––
50
Units
°C/W
are on page 10
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
2/12/09
IRF8734PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Conditions
Min. Typ. Max. Units
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 21A
mΩ
VGS = 4.5V, ID = 17A
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
30
–––
–––
0.023
–––
–––
Static Drain-to-Source On-Resistance
–––
–––
2.9
4.2
3.5
5.1
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35
–––
1.80
-6.5
Drain-to-Source Leakage Current
–––
–––
–––
–––
2.35
V
VDS = VGS, ID = 50µA
––– mV/°C
VDS = 24V, VGS = 0V
1.0
µA
VDS = 24V, VGS = 0V, TJ = 125°C
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
gfs
Qg
Forward Transconductance
Total Gate Charge
85
–––
–––
20
–––
30
Qgs1
Qgs2
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
–––
–––
5.2
2.3
–––
–––
Qgd
Qgodr
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
–––
–––
6.9
5.4
–––
–––
Output Charge
–––
–––
9.2
15
–––
–––
RG
td(on)
Gate Resistance
Turn-On Delay Time
–––
–––
1.7
13
3.1
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
16
15
–––
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
8.0
3175
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
627
241
–––
–––
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
∆VGS(th)
IDSS
Qsw
Qoss
e
e
nA
VGS = 20V
VGS = -20V
S
VDS = 15V, ID = 17A
nC
VDS = 15V
VGS = 4.5V
ID = 17A
See Figs. 16a &16b
nC
VDS = 16V, VGS = 0V
Ω
VDD = 15V, VGS = 4.5V
ns
ID = 17A
e
RG = 1.8Ω
See Figs. 15a &15b
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
c
d
Typ.
Max.
Units
–––
–––
216
17
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
–––
ISM
Pulsed Source Current
(Body Diode)
–––
–––
168
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
20
1.0
30
V
ns
Qrr
Reverse Recovery Charge
–––
25
38
nC
2
c
–––
3.1
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 17A, VGS = 0V
TJ = 25°C, IF = 17A, VDD = 15V
di/dt = 345A/µs
e
e
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IRF8734PbF
1000
ID, Drain-to-Source Current (A)
TOP
100
10
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
0.1
2.3V
0.01
TOP
ID, Drain-to-Source Current (A)
1000
100
BOTTOM
10
1
2.3V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
Tj = 150°C
0.1
10
0.1
100
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
2
2.5
3
3.5
4
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1.4
1.2
1.0
0.8
0.6
0.1
1.5
1.6
ID = 21A
VGS = 10V
4.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF8734PbF
100000
14.0
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
10000
Ciss
1000
Coss
Crss
ID= 17A
12.0
VDS= 24V
VDS= 15V
10.0
8.0
6.0
4.0
2.0
100
0.0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10 15 20 25 30 35 40 45 50 55
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 150°C
10
TJ = 25°C
1
100µsec
10
1msec
1
T A = 25°C
0.1
10msec
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
5
1.0
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF8734PbF
25
VGS(th) , Gate Threshold Voltage (V)
2.5
ID, Drain Current (A)
20
15
10
5
0
2.0
ID = 50µA
1.5
1.0
0.5
25
50
75
100
125
150
-75 -50 -25
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
10
0.20
0.10
0.05
0.02
1
0.01
τJ
0.1
R1
R1
τJ
τ1
R2
R2
R3
R3
τaC
τ
τ1
τ2
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
0.01
1E-005
0.0001
0.001
0.01
τ4
τ4
τi (sec)
9.66830
0.169346
16.3087
11.46293
20.7805
1.815389
3.14828
0.005835
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
R4
R4
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
20
1000
ID = 21A
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRF8734PbF
15
10
TJ = 125°C
5
T J = 25°C
0
2
4
6
8
10
ID
TOP
1.26A
2.03A
BOTTOM 17A
900
800
700
600
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
tp
tp
A
0.01Ω
I AS
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
VDS
90%
D.U.T.
+
- VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 15a. Switching Time Test Circuit
6
Fig 14b. Unclamped Inductive Waveforms
10%
VGS
td(on)
tr
td(off) tf
Fig 15b. Switching Time Waveforms
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IRF8734PbF
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
S
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
Driver Gate Drive
D.U.T
P.W.
+
ƒ
+
‚
-

*
RG
•
•
•
•
„
D.U.T. ISD Waveform
Reverse
Recovery
Current
VDD
**
P.W.
Period
***
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
Qgs2 Qgs1
Qgd
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
VDD
ISD
*** VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
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IRF8734PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8734PbF
SO-8 Tape and Reel
(Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF8734PbF
Orderable part number
Package Type
IRF8734PbF
IRF8734TRPbF
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
†
Qualification Information
Qualification level
Moisture Sensitivity Level
RoHS Compliant
†
††
†††
Consumer ††
(per JEDEC JESD47F††† guidelines)
MSL1
SO-8
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 1.69mH
RG = 25Ω, IAS = 16A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board
Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2009
10
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