ASI ASI10546 Npn silicon rf power transistor Datasheet

AJT030
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG
L
N
DESCRIPTION:
J
O
A
B
E
The ASI AJT030 is Designed for
K
D
C
.062 x 45°
M
FEATURES:
G
F
• Input Matching Network
•
• Omnigold™ Metalization System
Q
R
DIM
MAXIMUM RATINGS
.140 / 3.56
B
.110 / 2.80
.110 / 2.80
.407 / 10.34
.395 / 10.03
.193 / 4.90
.230 / 5.84
F
3.5 A
VCC
40 V
PDISS
75 W @ TC ≤ 85 C
O
O
-65 OC to +200 OC
θ JC
2.2 OC/W
CHARACTERISTICS
.003 / 0.08
.006 / 0.15
H
.118 / 3.00
.131 / 3.33
I
.063 / 1.60
J
.650 / 16.51
K
.386 / 9.80
L
.900 / 22.86
.450 / 11.43
.125 / 3.18
N
O
TSTG
G
M
.050 / 1.27
O
-65 C to +250 C
P
.405 / 10.29
Q
.170 / 4.32
R
.062 / 1.58
ORDER CODE: ASI10546
O
TC = 25 C
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCER
IC = 20 mA
BVEBO
IE = 1.0 mA
ICES
VCE = 35 V
hFE
VCE = 5.0 V
ηC
inches / mm
inches / mm
A
E
IC
PG
MAXIMUM
MINIMUM
D
SYMBOL
I
H
C
TJ
Ø .120
P
VCC = 50 V
RBE = 10 Ω
IC = 1.0 A
POUT = 30 W
MINIMUM TYPICAL MAXIMUM
55
V
55
V
3.5
V
15
f = 960 - 1215 MHz
UNITS
5.0
mA
150
---
7.8
dB
40
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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