CYStech Electronics Corp. Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB160N25J3 BVDSS 250V ID@VGS=10V VGS=10V, ID=9A 18A 132mΩ VGS=4.5V, ID=6A 138mΩ RDSON(TYP) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circuit Outline TO-252(DPAK) MTB160N25J3 G：Gate S：Source G D：Drain D S Ordering Information Device MTB160N25J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB160N25J3 CYStek Product Specification Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=6mH, ID=8A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS 200 ±20 18 12.7 44 10 192 83 41.5 -55~+175 Pd Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.8 62.5 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg MTB160N25J3 Min. Typ. Max. Unit Test Conditions 250 1 - 132 138 22 2.5 ±100 1 10 175 195 - V V nA S VGS=0V, ID=250μA VDS =VGS, ID=250μA VGS=±20V, VDS=0V VDS =250V, VGS =0V VDS =200V, VGS =0V, TJ=125°C VGS =10V, ID=9A VGS =4.5V, ID=6A VDS =10V, ID=9A - 44.3 6.3 15 16 55 141 125 2170 121 73 1.4 - nC VDS=200V, ID=18A, VGS=10V ns VDS=125V, ID=18A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz μA mΩ CYStek Product Specification CYStech Electronics Corp. Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 0.84 117 480 18 44 1.3 - Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 3/9 A V ns nC IF=18A, VGS=0V IF=18A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTB160N25J3 CYStek Product Specification Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V 5V 4V 35 ID, Drain Current (A) 30 25 20 BVDSS, Normalized Drain-Source Breakdown Voltage 40 VGS=3.5V 15 10 VGS=3V 5 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 4 8 12 16 VDS, Drain-Source Voltage(V) -75 -50 -25 20 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1000 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=3V 100 VGS=4.5V VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 3.6 ID=9A R DS(on), Normalized Static DrainSource On-State Resistance 900 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 800 700 600 500 400 300 200 100 3.2 2.8 VGS=10V, ID=9A 2.4 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 132mΩ typ. 0.4 0 0 0 MTB160N25J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=10V 0.1 Ta=25°C Pulsed VDS=200V ID=18A 8 6 4 2 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 10 20 30 40 Qg, Total Gate Charge(nC) 50 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 25 RDSON Limited 100μ s 1ms 10 10ms 100ms 1 1s DC TC=25°C, Tj=175°C VGS=10V, θ JC=1.8°C/W Single Pulse 0.1 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 20 15 10 5 VGS=10V, RθJC=1.8°C/W 0 0.01 0.1 \ MTB160N25J3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 1000 40 900 VDS=10V 35 30 700 Power (W) ID, Drain Current(A) TJ(MAX) =175°C TC=25°C θ JC=1.8°C/W 800 25 20 15 600 500 400 300 10 200 5 100 0 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0.01 0.1 1 10 Pulse Width(s) 100 1000 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=1.8 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB160N25J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB160N25J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB160N25J3 CYStek Product Specification Spec. No. : C977J3 Issued Date : 2014.10.02 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 B160 N25 Device Name Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB160N25J3 CYStek Product Specification