LSU309 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U309 The LSU309 is a high frequency n-channel JFET offering a wide range and low noise performance. The hermetically sealed TO-18 package is well suited for high reliability and harsh environment applications. (See Packaging Information). High Power Low Noise gain Dynamic Range greater than 100dB Easily matched to 75Ω input LSU309 Applications: Gpg = 11.5dB NF = 2.7dB Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current MAXIMUM VOLTAGES Gate to Drain Voltage or Gate to Source Voltage LSU309 Benefits: FEATURES DIRECT REPLACEMENT FOR SILICONIX U309 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C1 UHV / VHF Amplifiers Mixers Oscillators LSU309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage ‐25 VGS(F) Gate to Source Forward Voltage 0.7 VGS(off) Gate to Source Cutoff Voltage ‐1 IDSS Drain to Source Saturation Current2 12 IG Gate Operating Current (Note 3) ‐‐ rDS(on) Drain to Source On Resistance ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐15 35 MAX ‐‐ 1 ‐4 30 ‐‐ ‐‐ UNIT V mA pA Ω ‐55°C to +150°C ‐55°C to +135°C 500mW 10mA ‐25V CONDITIONS VDS = 0V, IG = ‐1µA VDS = 0V, IG = 10mA VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VDG = 9V, ID = 10mA VGS = 0V, ID = 1mA LSU309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. gfs Forward Transconductance 10 14 gos Output Conductance ‐‐ 110 Ciss Input Capacitance ‐‐ 4 Crss Reverse Transfer Capacitance ‐‐ 1.9 en Equivalent Noise Voltage 6 ‐‐ MAX ‐‐ 250 5 2.5 ‐‐ UNIT mS µS pF VDS = 10V, VGS = ‐10V , f = 1MHz nV/√Hz VDS = 10V, ID = 10mA , f = 100Hz LSU309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP MAX UNIT CONDITIONS dB dB Click To Buy NF Noise Figure Gpg Power Gain3 gfg Forward Transconductance gog Output Conductance f = 105MHz f = 450MHz f = 105MHz f = 450MHz f = 105MHz ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 1.5 2.7 16 11.5 14 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ f = 450MHz ‐‐ 13 ‐‐ f = 105MHz ‐‐ 0.16 ‐‐ f = 450MHz ‐‐ 0.55 ‐‐ CONDITIONS VDS = 10V, ID = 10mA , f = 1kHz VDS = 10V, ID = 10mA mS Note 1 ‐ Absolute maximum ratings are limiting values above which LSU309 serviceability may be impaired. Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3% Note 3 ‐ Measured at optimum input noise match Micross Components Europe Available Packages: TO-18 (Bottom View) LSU309 in TO-18 LSU309 in bare die. Tel: +44 1603 788967 Email: [email protected] Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx