EN29GL064 EN29GL064 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Write operation status bits indicate program and erase operation completion • High performance - Access times as fast as 70 ns • Support for CFI (Common Flash Interface) • VIO Input/Output 1.65 to 3.6 volts - All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC • Persistent methods of Advanced Sector Protection • WP#/ACC input • 8-word/16-byte page read buffer - Accelerates programming time (when VHH is applied) for greater throughput during system production • 16-word/32-byte write buffer reduces overall programming time for multiple-word updates - Protects first or last sector regardless of sector protection settings • Secured Silicon Sector region - 128-word/256-byte sector for permanent, secure identification through an 8-word/16byte random Electronic Serial Number - Can be programmed and locked at the factory or by the customer • Hardware reset input (RESET#) resets device • Ready/Busy# output (RY/BY#) detects program or erase cycle completion • Flexible Sector Architecture: - Uniform sector models: One hundred and twenty-eight uniform 32Kword/64Kbyte sectors - Boot sector models: Eight 8-Kbyte boot sectors on Top or Bottom and one hundred twenty-seven 32Kword / 64Kbyte sectors. • Minimum 100K program/erase endurance cycles. • Package Options - 56-pin TSOP - 64-ball 11mm x 13mm BGA • Industrial Temperature Range. GENERAL DESCRIPTION The EN29GL064 offers a fast page access time of 25 ns with a corresponding random access time as fast as 70 ns. It features a Write Buffer that allows a maximum of 16 words/32 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 CONNECTION DIAGRAMS Figure 1. 56-pin Standard TSOP (Top View) RFU RFU A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A21 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 RFU RFU 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 RFU RFU A16 BYTE# Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss CE# A0 RFU VIO Note: RFU= Reserved for future use This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 2. 64-ball Ball Grid Array (Top View, Balls Facing Down) A8 B8 C8 D8 E8 F8 G8 H8 RFU RFU RFU VCC VSS RFU RFU RFU A7 B7 C7 D7 E7 F7 G7 H7 A13 A12 A14 A15 A16 A6 B6 C6 D6 E6 F6 G6 H6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 A5 B5 C5 D5 E5 F5 G5 H5 WE# RESET# A21 A19 DQ5 DQ12 VCC DQ4 A4 B4 C4 D4 E4 F4 G4 H4 WP# / ACC A18 A20 DQ2 DQ10 DQ11 DQ3 A3 B3 C3 D3 E3 F3 G3 H3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A2 B2 C2 D2 E2 F2 G2 H2 A3 A4 A2 A1 A0 CE# OE# VSS A1 B1 C1 D1 E1 F1 G1 H1 RFU RFU RFU RFU RFU VIO RFU RFU RY / BY# BYTE# DQ15 / A -1 VSS Note: RFU= Reserved for future use This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 TABLE 1. PIN DESCRIPTION Pin Name FIGURE 3. LOGIC DIAGRAM Function EN29GL064 A21–A0 A21–A0 DQ0-DQ14 Data input/output. DQ15 / A-1 DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) CE# Chip Enable OE# Output Enable RESET# Hardware Reset Pin RY/BY# Ready/Busy Output WE# Write Enable Vcc Supply Voltage (2.7-3.6V) Vss Ground VIO V I/O Input. BYTE# Byte/Word mode selection WP#/ACC RFU DQ0 – DQ15 (A-1) A0 – A21 CE# OE# WE# Reset# WP#/ACC Byte# VIO RY/BY# Write Protect / Acceleration Pin (WP# has an internal pull-up; when unconnected, WP# is at VIH.) Reserved for future use. Not Connected to anything This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Table 2. PRODUCT SELECTOR GUIDE Product Number EN29GL064 Full Voltage Range: Vcc=2.7 – 3.6 V VIO=1.65 – 3.6 V Speed Option -70 Max Access Time, ns (tacc) 70 Max Page Read Access, ns(tpacc) 25 Max CE# Access, ns (tce) 70 Max OE# Access, ns (toe) 25 BLOCK DIAGRAM Vcc Vss V IO RY/BY# DQ0-DQ15 (A-1) Blo ck Protect Switches Erase Voltage Gen erator Inp ut/Output Buffers State Control WE# Command Register Program Voltage Generator Chip Enable Output Enable Logic CE# OE# Vcc Detector Timer Ad dress Latch STB STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix A0 -AMax This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Product Overview EN29GL064 is 64 Mb, 3.0-volt-only, page mode Flash devices optimized for today’s embedded designs that demand a large storage array and rich functionality. Additional features include: • Single word programming or a 16-word buffer for an increased programming speed • Program Suspend/Resume and Erase Suspend/Resume • Advanced Sector Protection methods for protecting sectors as required • 128 words/256 bytes of Secured Silicon area for storing customer and factory secured information. The Secured Silicon Sector is One Time Programmable. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Table 3A. Uniform Sector / Persistent Protection Sector Group Address Tables (EN29GL064H/L) PPB Group PPB 0 0000000 Sector Size (Kbytes/Kwords) 64/32 Address Range Byte mode (x8) 000000h–00FFFFh Address Range Word mode (x16) 000000h–007FFFh SA1 0000001 64/32 010000h–01FFFFh 008000h–00FFFFh SA2 0000010 64/32 020000h–02FFFFh 010000h–017FFFh Sector A21–A15 SA0 PPB 1 PPB 2 PPB 3 PPB 4 PPB 5 PPB 6 PPB 7 PPB 8 PPB 9 PPB 10 PPB 11 PPB 12 SA3 0000011 64/32 030000h–03FFFFh 018000h–01FFFFh SA4 0000100 64/32 040000h–04FFFFh 020000h–027FFFh SA5 0000101 64/32 050000h–05FFFFh 028000h–02FFFFh SA6 0000110 64/32 060000h–06FFFFh 030000h–037FFFh SA7 0000111 64/32 070000h–07FFFFh 038000h–03FFFFh SA8 0001000 64/32 080000h–08FFFFh 040000h–047FFFh SA9 0001001 64/32 090000h–09FFFFh 048000h–04FFFFh SA10 0001010 64/32 0A0000h–0AFFFFh 050000h–057FFFh SA11 0001011 64/32 0B0000h–0BFFFFh 058000h–05FFFFh 060000h–067FFFh SA12 0001100 64/32 0C0000h–0CFFFFh SA13 0001101 64/32 0D0000h–0DFFFFh 068000h–06FFFFh SA14 0001110 64/32 0E0000h–0EFFFFh 070000h–077FFFh SA15 0001111 64/32 0F0000h–0FFFFFh 078000h–07FFFFh SA16 0010000 64/32 100000h–10FFFFh 080000h–087FFFh SA17 0010001 64/32 110000h–11FFFFh 088000h–08FFFFh SA18 0010010 64/32 120000h–12FFFFh 090000h–097FFFh SA19 0010011 64/32 130000h–13FFFFh 098000h–09FFFFh 0A0000h–0A7FFFh SA20 0010100 64/32 140000h–14FFFFh SA21 0010101 64/32 150000h–15FFFFh 0A8000h–0AFFFFh SA22 0010110 64/32 160000h–16FFFFh 0B0000h–0B7FFFh SA23 0010111 64/32 170000h–17FFFFh 0B8000h–0BFFFFh SA24 0011000 64/32 180000h–18FFFFh 0C0000h–0C7FFFh SA25 0011001 64/32 190000h–19FFFFh 0C8000h–0CFFFFh SA26 0011010 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh SA27 0011011 64/32 1B0000h–1BFFFFh 0D8000h–0DFFFFh 0E0000h–0E7FFFh SA28 0011100 64/32 1C0000h–1CFFFFh SA29 0011101 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh SA30 0011110 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh SA31 0011111 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh SA32 0100000 64/32 200000h–20FFFFh 100000h–107FFFh SA33 0100001 64/32 210000h–21FFFFh 108000h–10FFFFh SA34 0100010 64/32 220000h–22FFFFh 110000h–117FFFh SA35 0100011 64/32 230000h–23FFFFh 118000h–11FFFFh SA36 0100100 64/32 240000h–24FFFFh 120000h–127FFFh 128000h–12FFFFh SA37 0100101 64/32 250000h–25FFFFh SA38 0100110 64/32 260000h–26FFFFh 130000h–137FFFh SA39 0100111 64/32 270000h–27FFFFh 138000h–13FFFFh This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 PPB 13 PPB 14 PPB 15 PPB 16 PPB 17 PPB 18 PPB 19 PPB 20 PPB 21 PPB 22 PPB 23 SA40 0101000 64/32 280000h–28FFFFh 140000h–147FFFh SA41 0101001 64/32 290000h–29FFFFh 148000h–14FFFFh SA42 0101010 64/32 2A0000h–2AFFFFh 150000h–157FFFh SA43 0101011 64/32 2B0000h–2BFFFFh 158000h–15FFFFh SA44 0101100 64/32 2C0000h–2CFFFFh 160000h–167FFFh SA45 0101101 64/32 2D0000h–2DFFFFh 168000h–16FFFFh 170000h–177FFFh SA46 0101110 64/32 2E0000h–2EFFFFh SA47 0101111 64/32 2F0000h–2FFFFFh 178000h–17FFFFh SA48 0110000 64/32 300000h–30FFFFh 180000h–187FFFh SA49 0110001 64/32 310000h–31FFFFh 188000h–18FFFFh SA50 0110010 64/32 320000h–32FFFFh 190000h–197FFFh SA51 0110011 64/32 330000h–33FFFFh 198000h–19FFFFh SA52 0110100 64/32 340000h–34FFFFh 1A0000h–1A7FFFh SA53 0110101 64/32 350000h–35FFFFh 1A8000h–1AFFFFh SA54 0110110 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA55 0110111 64/32 370000h–37FFFFh 1B8000h–1BFFFFh SA56 0111000 64/32 380000h–38FFFFh 1C0000h–1C7FFFh SA57 0111001 64/32 390000h–39FFFFh 1C8000h–1CFFFFh SA58 0111010 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA59 0111011 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA60 0111100 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA61 0111101 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA62 0111110 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA63 0111111 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh 200000h–207FFFh SA64 1000000 64/32 400000h–40FFFFh SA65 1000001 64/32 410000h–41FFFFh 208000h–20FFFFh SA66 1000010 64/32 420000h–42FFFFh 210000h–217FFFh SA67 1000011 64/32 430000h–43FFFFh 218000h–21FFFFh SA68 1000100 64/32 440000h–44FFFFh 220000h–227FFFh SA69 1000101 64/32 450000h–45FFFFh 228000h–22FFFFh SA70 1000110 64/32 460000h–46FFFFh 230000h–237FFFh SA71 1000111 64/32 470000h–47FFFFh 238000h–23FFFFh SA72 1001000 64/32 480000h–48FFFFh 240000h–247FFFh SA73 1001001 64/32 490000h–49FFFFh 248000h–24FFFFh SA74 1001010 64/32 4A0000h–4AFFFFh 250000h–257FFFh 258000h–25FFFFh SA75 1001011 64/32 4B0000h–4BFFFFh SA76 1001100 64/32 4C0000h–4CFFFFh 260000h–267FFFh SA77 1001101 64/32 4D0000h–4DFFFFh 268000h–26FFFFh SA78 1001110 64/32 4E0000h–4EFFFFh 270000h–277FFFh SA79 1001111 64/32 4F0000h–4FFFFFh 278000h–27FFFFh SA80 1010000 64/32 500000h–50FFFFh 280000h–287FFFh SA81 1010001 64/32 510000h–51FFFFh 288000h–28FFFFh SA82 1010010 64/32 520000h–52FFFFh 290000h–297FFFh This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 8 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 PPB 24 PPB 25 PPB 26 PPB 27 PPB 28 PPB 29 PPB 30 PPB 31 PPB 32 SA83 1010011 64/32 530000h–53FFFFh 298000h–29FFFFh SA84 1010100 64/32 540000h–54FFFFh 2A0000h–2A7FFFh SA85 1010101 64/32 550000h–55FFFFh 2A8000h–2AFFFFh SA86 1010110 64/32 560000h–56FFFFh 2B0000h–2B7FFFh SA87 1010111 64/32 570000h–57FFFFh 2B8000h–2BFFFFh SA88 1011000 64/32 580000h–58FFFFh 2C0000h–2C7FFFh SA89 1011001 64/32 590000h–59FFFFh 2C8000h–2CFFFFh SA90 1011010 64/32 5A0000h–5AFFFFh 2D0000h–2D7FFFh SA91 1011011 64/32 5B0000h–5BFFFFh 2D8000h–2DFFFFh SA92 1011100 64/32 5C0000h–5CFFFFh 2E0000h–2E7FFFh 2E8000h–2EFFFFh SA93 1011101 64/32 5D0000h–5DFFFFh SA94 1011110 64/32 5E0000h–5EFFFFh 2F0000h–2F7FFFh SA95 1011111 64/32 5F0000h–5FFFFFh 2F8000h–2FFFFFh SA96 1100000 64/32 600000h–60FFFFh 300000h–307FFFh SA97 1100001 64/32 610000h–61FFFFh 308000h–30FFFFh SA98 1100010 64/32 620000h–62FFFFh 310000h–317FFFh SA99 1100011 64/32 630000h–63FFFFh 318000h–31FFFFh SA100 1100100 64/32 640000h–64FFFFh 320000h–327FFFh SA101 1100101 64/32 650000h–65FFFFh 328000h–32FFFFh SA102 1100110 64/32 660000h–66FFFFh 330000h–337FFFh SA103 1100111 64/32 670000h–67FFFFh 338000h–33FFFFh SA104 1101000 64/32 680000h–68FFFFh 340000h–347FFFh SA105 1101001 64/32 690000h–69FFFFh 348000h–34FFFFh 350000h–357FFFh SA106 1101010 64/32 6A0000h–6AFFFFh SA107 1101011 64/32 6B0000h–6BFFFFh 358000h–35FFFFh SA108 1101100 64/32 6C0000h–6CFFFFh 360000h–367FFFh SA109 1101101 64/32 6D0000h–6DFFFFh 368000h–36FFFFh SA110 1101110 64/32 6E0000h–6EFFFFh 370000h–377FFFh SA111 1101111 64/32 6F0000h–6FFFFFh 378000h–37FFFFh SA112 1110000 64/32 700000h–70FFFFh 380000h–387FFFh SA113 1110001 64/32 710000h–71FFFFh 388000h–38FFFFh SA114 1110010 64/32 720000h–72FFFFh 390000h–397FFFh SA115 1110011 64/32 730000h–73FFFFh 398000h–39FFFFh SA116 1110100 64/32 740000h–74FFFFh 3A0000h–3A7FFFh SA117 1110101 64/32 750000h–75FFFFh 3A8000h–3AFFFFh SA118 1110110 64/32 760000h–76FFFFh 3B0000h–3B7FFFh 3B8000h–3BFFFFh SA119 1110111 64/32 770000h–77FFFFh SA120 1111000 64/32 780000h–78FFFFh 3C0000h–3C7FFFh SA121 1111001 64/32 790000h–79FFFFh 3C8000h–3CFFFFh SA122 1111010 64/32 7A0000h–7AFFFFh 3D0000h–3D7FFFh SA123 1111011 64/32 7B0000h–7BFFFFh 3D8000h–3DFFFFh PPB 34 SA124 1111100 64/32 7C0000h–7CFFFFh 3E0000h–3E7FFFh PPB 35 SA125 1111101 64/32 7D0000h–7DFFFFh 3E8000h–3EFFFFh PPB 33 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 9 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 PPB 36 SA126 1111110 64/32 7E0000h–7EFFFFh 3F0000h–3F7FFFh PPB 37 SA127 1111111 64/32 7F0000h–7FFFFFh 3F8000h–3FFFFFh Table 3B. Top Boot Sector / Persistent Protection Sector Group Address Tables (EN29GL064T) PPB Group PPB 0 PPB 1 PPB 2 PPB 3 PPB 4 PPB 5 PPB 6 PPB 7 PPB 8 PPB 9 64/32 Address Range (h) Byte mode (x8) 000000–00FFFF Address Range (h) Word Mode (x16) 000000–007FFF 0000001xxx 64/32 010000–01FFFF 008000–00FFFF SA2 0000010xxx 64/32 020000–02FFFF 010000–017FFF SA3 0000011xxx 64/32 030000–03FFFF 018000–01FFFF SA4 0000100xxx 64/32 040000–04FFFF 020000–027FFF SA5 0000101xxx 64/32 050000–05FFFF 028000–02FFFF SA6 0000110xxx 64/32 060000–06FFFF 030000–037FFF SA7 0000111xxx 64/32 070000–07FFFF 038000–03FFFF SA8 0001000xxx 64/32 080000–08FFFF 040000–047FFF SA9 0001001xxx 64/32 090000–09FFFF 048000–04FFFF SA10 0001010xxx 64/32 0A0000–0AFFFF 050000–057FFF SA11 0001011xxx 64/32 0B0000–0BFFFF 058000–05FFFF SA12 0001100xxx 64/32 0C0000–0CFFFF 060000–067FFF SA13 0001101xxx 64/32 0D0000–0DFFFF 068000–06FFFF SA14 0001110xxx 64/32 0E0000–0EFFFF 070000–077FFF SA15 0001111xxx 64/32 0F0000–0FFFFF 078000–07FFFF SA16 0010000xxx 64/32 100000–10FFFF 080000–087FFF SA17 0010001xxx 64/32 110000–11FFFF 088000–08FFFF SA18 0010010xxx 64/32 120000–12FFFF 090000–097FFF SA19 0010011xxx 64/32 130000–13FFFF 098000–09FFFF SA20 0010100xxx 64/32 140000–14FFFF 0A0000–0A7FFF SA21 0010101xxx 64/32 150000–15FFFF 0A8000–0AFFFF SA22 0010110xxx 64/32 160000–16FFFF 0B0000–0B7FFF SA23 0010111xxx 64/32 170000–17FFFF 0B8000–0BFFFF SA24 0011000xxx 64/32 180000–18FFFF 0C0000–0C7FFF SA25 0011001xxx 64/32 190000–19FFFF 0C8000–0CFFFF SA26 0011010xxx 64/32 1A0000–1AFFFF 0D0000–0D7FFF SA27 0011011xxx 64/32 1B0000–1BFFFF 0D8000–0DFFFF SA28 0011100xxx 64/32 1C0000–1CFFFF 0E0000–0E7FFF SA29 0011101xxx 64/32 1D0000–1DFFFF 0E8000–0EFFFF SA30 0011110xxx 64/32 1E0000–1EFFFF 0F0000–0F7FFF Sector A21 – A12 Sector Size (Kbytes / Kwords) SA0 0000000xxx SA1 SA31 0011111xxx 64/32 1F0000–1FFFFF 0F8000–0FFFFF SA32 0100000xxx 64/32 200000–20FFFF 100000–107FFF SA33 0100001xxx 64/32 210000–21FFFF 108000–10FFFF SA34 0100010xxx 64/32 220000–22FFFF 110000–117FFF SA35 0100011xxx 64/32 230000–23FFFF 118000–11FFFF SA36 0100100xxx 64/32 240000–24FFFF 120000–127FFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 10 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 PPB 10 PPB 11 PPB 12 PPB 13 PPB 14 PPB 15 PPB 16 PPB 17 PPB 18 PPB 19 SA37 0100101xxx 64/32 250000–25FFFF 128000–12FFFF SA38 0100110xxx 64/32 260000–26FFFF 130000–137FFF SA39 0100111xxx 64/32 270000–27FFFF 138000–13FFFF SA40 0101000xxx 64/32 280000–28FFFF 140000–147FFF SA41 0101001xxx 64/32 290000–29FFFF 148000–14FFFF SA42 0101010xxx 64/32 2A0000–2AFFFF 150000–157FFF SA43 0101011xxx 64/32 2B0000–2BFFFF 158000–15FFFF SA44 0101100xxx 64/32 2C0000–2CFFFF 160000–167FFF SA45 0101101xxx 64/32 2D0000–2DFFFF 168000–16FFFF SA46 0101110xxx 64/32 2E0000–2EFFFF 170000–177FFF SA47 0101111xxx 64/32 2F0000–2FFFFF 178000–17FFFF SA48 0110000xxx 64/32 300000–30FFFF 180000–187FFF SA49 0110001xxx 64/32 310000–31FFFF 188000–18FFFF SA50 0110010xxx 64/32 320000–32FFFF 190000–197FFF SA51 0110011xxx 64/32 330000–33FFFF 198000–19FFFF SA52 0110100xxx 64/32 340000–34FFFF 1A0000–1A7FFF SA53 0110101xxx 64/32 350000–35FFFF 1A8000–1AFFFF SA54 0110110xxx 64/32 360000–36FFFF 1B0000–1B7FFF SA55 0110111xxx 64/32 370000–37FFFF 1B8000–1BFFFF SA56 0111000xxx 64/32 380000–38FFFF 1C0000–1C7FFF SA57 0111001xxx 64/32 390000–39FFFF 1C8000–1CFFFF SA58 0111010xxx 64/32 3A0000–3AFFFF 1D0000–1D7FFF SA59 0111011xxx 64/32 3B0000–3BFFFF 1D8000–1DFFFF SA60 0111100xxx 64/32 3C0000–3CFFFF 1E0000–1E7FFF SA61 0111101xxx 64/32 3D0000–3DFFFF 1E8000–1EFFFF SA62 0111110xxx 64/32 3E0000–3EFFFF 1F0000–1F7FFF SA63 0111111xxx 64/32 3F0000–3FFFFF 1F8000–1FFFFF SA64 1000000xxx 64/32 400000–40FFFF 200000–207FFF SA65 1000001xxx 64/32 410000–41FFFF 208000–20FFFF SA66 1000010xxx 64/32 420000–42FFFF 210000–217FFF SA67 1000011xxx 64/32 430000–43FFFF 218000–21FFFF SA68 1000100xxx 64/32 440000–44FFFF 220000–227FFF SA69 1000101xxx 64/32 450000–45FFFF 228000–22FFFF SA70 1000110xxx 64/32 460000–46FFFF 230000–237FFF SA71 1000111xxx 64/32 470000–47FFFF 238000–23FFFF SA72 1001000xxx 64/32 480000–48FFFF 240000–247FFF SA73 1001001xxx 64/32 490000–49FFFF 248000–24FFFF SA74 1001010xxx 64/32 4A0000–4AFFFF 250000–257FFF SA75 1001011xxx 64/32 4B0000–4BFFFF 258000–25FFFF SA76 1001100xxx 64/32 4C0000–4CFFFF 260000–267FFF SA77 1001101xxx 64/32 4D0000–4DFFFF 268000–26FFFF SA78 1001110xxx 64/32 4E0000–4EFFFF 270000–277FFF SA79 1001111xxx 64/32 4F0000–4FFFFF 278000–27FFFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 11 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 PPB 20 PPB 21 PPB 22 PPB 23 PPB 24 PPB 25 PPB 26 PPB 27 PPB 28 PPB 29 PPB 30 SA80 1010000xxx 64/32 500000–50FFFF 280000–287FFF SA81 1010001xxx 64/32 510000–51FFFF 288000–28FFFF SA82 1010010xxx 64/32 520000–52FFFF 290000–297FFF SA83 1010011xxx 64/32 530000–53FFFF 298000–29FFFF SA84 1010100xxx 64/32 540000–54FFFF 2A0000–2A7FFF SA85 1010101xxx 64/32 550000–55FFFF 2A8000–2AFFFF SA86 1010110xxx 64/32 560000–56FFFF 2B0000–2B7FFF SA87 1010111xxx 64/32 570000–57FFFF 2B8000–2BFFFF SA88 1011000xxx 64/32 580000–58FFFF 2C0000–2C7FFF SA89 1011001xxx 64/32 590000–59FFFF 2C8000–2CFFFF SA90 1011010xxx 64/32 5A0000–5AFFFF 2D0000–2D7FFF SA91 1011011xxx 64/32 5B0000–5BFFFF 2D8000–2DFFFF SA92 1011100xxx 64/32 5C0000–5CFFFF 2E0000–2E7FFF SA93 1011101xxx 64/32 5D0000–5DFFFF 2E8000–2EFFFF SA94 1011110xxx 64/32 5E0000–5EFFFF 2F0000–2F7FFF SA95 1011111xxx 64/32 5F0000–5FFFFF 2F8000–2FFFFF SA96 1100000xxx 64/32 600000–60FFFF 300000–307FFF SA97 1100001xxx 64/32 610000–61FFFF 308000–30FFFF SA98 1100010xxx 64/32 620000–62FFFF 310000–317FFF SA99 1100011xxx 64/32 630000–63FFFF 318000–31FFFF SA100 1100100xxx 64/32 640000–64FFFF 320000–327FFF SA101 1100101xxx 64/32 650000–65FFFF 328000–32FFFF SA102 1100110xxx 64/32 660000–66FFFF 330000–337FFF SA103 1100111xxx 64/32 670000–67FFFF 338000–33FFFF SA104 1101000xxx 64/32 680000–68FFFF 340000–347FFF SA105 1101001xxx 64/32 690000–69FFFF 348000–34FFFF SA106 1101010xxx 64/32 6A0000–6AFFFF 350000–357FFF SA107 1101011xxx 64/32 6B0000–6BFFFF 358000–35FFFF SA108 1101100xxx 64/32 6C0000–6CFFFF 360000–367FFF SA109 1101101xxx 64/32 6D0000–6DFFFF 368000–36FFFF SA110 1101110xxx 64/32 6E0000–6EFFFF 370000–377FFF SA111 1101111xxx 64/32 6F0000–6FFFFF 378000–37FFFF SA112 1110000xxx 64/32 700000–70FFFF 380000–387FFF SA113 1110001xxx 64/32 710000–71FFFF 388000–38FFFF SA114 1110010xxx 64/32 720000–72FFFF 390000–397FFF SA115 1110011xxx 64/32 730000–73FFFF 398000–39FFFF SA116 1110100xxx 64/32 740000–74FFFF 3A0000–3A7FFF SA117 1110101xxx 64/32 750000–75FFFF 3A8000–3AFFFF SA118 1110110xxx 64/32 760000–76FFFF 3B0000–3B7FFF SA119 1110111xxx 64/32 770000–77FFFF 3B8000–3BFFFF SA120 1111000xxx 64/32 780000–78FFFF 3C0000–3C7FFF SA121 1111001xxx 64/32 790000–79FFFF 3C8000–3CFFFF SA122 1111010xxx 64/32 7A0000–7AFFFF 3D0000–3D7FFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 12 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 SA123 1111011xxx 64/32 7B0000–7BFFFF 3D8000–3DFFFF PPB 31 SA124 1111100xxx 64/32 7C0000–7CFFFF 3E0000–3E7FFF PPB 32 SA125 1111101xxx 64/32 7D0000–7DFFFF 3E8000–3EFFFF PPB 33 SA126 1111110xxx 64/32 7E0000–7EFFFF 3F0000–3F7FFF PPB 34 SA127 1111111000 8/4 7F0000–7F1FFF 3F8000–3F8FFF PPB 35 SA128 1111111001 8/4 7F2000–7F3FFF 3F9000–3F9FFF PPB 36 SA129 1111111010 8/4 7F4000–7F5FFF 3FA000–3FAFFF PPB 37 SA130 1111111011 8/4 7F6000–7F7FFF 3FB000–3FBFFF PPB 38 SA131 1111111100 8/4 7F8000–7F9FFF 3FC000–3FCFFF PPB 39 SA132 1111111101 8/4 7FA000–7FBFFF 3FD000–3FDFFF PPB 40 SA133 1111111110 8/4 7FC000–7FDFFF 3FE000–3FEFFF PPB 41 SA134 1111111111 8/4 7FE000–7FFFFF 3FF000–3FFFFF Table 3C. Bottom Boot Sector / Persistent Protection Sector Group Address Tables (EN29GL064B) PPB Group PPB 0 8/4 Address Range (h) Byte mode (x8) 000000–001FFF Address Range (h) Word Mode (x16) 000000–000FFF 0000000001 8/4 002000–003FFF 001000–001FFF SA2 0000000010 8/4 004000–005FFF 002000–002FFF PPB 3 SA3 0000000011 8/4 006000–007FFF 003000–003FFF PPB 4 SA4 0000000100 8/4 008000–009FFF 004000–004FFF PPB 5 SA5 0000000101 8/4 00A000–00BFFF 005000–005FFF PPB 6 SA6 0000000110 8/4 00C000–00DFFF 006000–006FFF PPB 7 SA7 0000000111 8/4 00E000–00FFFF 007000–007FFF PPB 8 SA8 0000001xxx 64/32 010000–01FFFF 008000–00FFFF PPB 9 SA9 0000010xxx 64/32 020000–02FFFF 010000–017FFF PPB 10 SA10 0000011xxx 64/32 030000–03FFFF 018000–01FFFF SA11 0000100xxx 64/32 040000–04FFFF 020000–027FFF SA12 0000101xxx 64/32 050000–05FFFF 028000–02FFFF SA13 0000110xxx 64/32 060000–06FFFF 030000–037FFF SA14 0000111xxx 64/32 070000–07FFFF 038000–03FFFF SA15 0001000xxx 64/32 080000–08FFFF 040000–047FFF SA16 0001001xxx 64/32 090000–09FFFF 048000–04FFFF SA17 0001010xxx 64/32 0A0000–0AFFFF 050000–057FFF SA18 0001011xxx 64/32 0B0000–0BFFFF 058000–05FFFF SA19 0001100xxx 64/32 0C0000–0CFFFF 060000–067FFF SA20 0001101xxx 64/32 0D0000–0DFFFF 068000–06FFFF SA21 0001110xxx 64/32 0E0000–0EFFFF 070000–077FFF SA22 0001111xxx 64/32 0F0000–0FFFFF 078000–07FFFF SA23 0010000xxx 64/32 100000–10FFFF 080000–087FFF SA24 0010001xxx 64/32 110000–11FFFF 088000–08FFFF SA25 0010010xxx 64/32 120000–12FFFF 090000–097FFF SA26 0010011xxx 64/32 130000–13FFFF 098000–09FFFF Sector A21 – A12 Sector Size (Kbytes / Kwords) SA0 0000000000 PPB 1 SA1 PPB 2 PPB 11 PPB 12 PPB 13 PPB 14 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 13 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 PPB 15 PPB 16 PPB 17 PPB 18 PPB 19 PPB 20 PPB 21 PPB 22 PPB 23 PPB 24 PPB 25 SA27 0010100xxx 64/32 140000–14FFFF 0A0000–0A7FFF SA28 0010101xxx 64/32 150000–15FFFF 0A8000–0AFFFF SA29 0010110xxx 64/32 160000–16FFFF 0B0000–0B7FFF SA30 0010111xxx 64/32 170000–17FFFF 0B8000–0BFFFF SA31 0011000xxx 64/32 180000–18FFFF 0C0000–0C7FFF SA32 0011001xxx 64/32 190000–19FFFF 0C8000–0CFFFF SA33 0011010xxx 64/32 1A0000–1AFFFF 0D0000–0D7FFF SA34 0011011xxx 64/32 1B0000–1BFFFF 0D8000–0DFFFF SA35 0011100xxx 64/32 1C0000–1CFFFF 0E0000–0E7FFF SA36 0011101xxx 64/32 1D0000–1DFFFF 0E8000–0EFFFF SA37 0011110xxx 64/32 1E0000–1EFFFF 0F0000–0F7FFF SA38 0011111xxx 64/32 1F0000–1FFFFF 0F8000–0FFFFF SA39 0100000xxx 64/32 200000–20FFFF 100000–107FFF SA40 0100001xxx 64/32 210000–21FFFF 108000–10FFFF SA41 0100010xxx 64/32 220000–22FFFF 110000–117FFF SA42 0100011xxx 64/32 230000–23FFFF 118000–11FFFF SA43 0100100xxx 64/32 240000–24FFFF 120000–127FFF SA44 0100101xxx 64/32 250000–25FFFF 128000–12FFFF SA45 0100110xxx 64/32 260000–26FFFF 130000–137FFF SA46 0100111xxx 64/32 270000–27FFFF 138000–13FFFF SA47 0101000xxx 64/32 280000–28FFFF 140000–147FFF SA48 0101001xxx 64/32 290000–29FFFF 148000–14FFFF SA49 0101010xxx 64/32 2A0000–2AFFFF 150000–157FFF SA50 0101011xxx 64/32 2B0000–2BFFFF 158000–15FFFF SA51 0101100xxx 64/32 2C0000–2CFFFF 160000–167FFF SA52 0101101xxx 64/32 2D0000–2DFFFF 168000–16FFFF SA53 0101110xxx 64/32 2E0000–2EFFFF 170000–177FFF SA54 0101111xxx 64/32 2F0000–2FFFFF 178000–17FFFF SA55 0110000xxx 64/32 300000–30FFFF 180000–187FFF SA56 0110001xxx 64/32 310000–31FFFF 188000–18FFFF SA57 0110010xxx 64/32 320000–32FFFF 190000–197FFF SA58 0110011xxx 64/32 330000–33FFFF 198000–19FFFF SA59 0110100xxx 64/32 340000–34FFFF 1A0000–1A7FFF SA60 0110101xxx 64/32 350000–35FFFF 1A8000–1AFFFF SA61 0110110xxx 64/32 360000–36FFFF 1B0000–1B7FFF SA62 0110111xxx 64/32 370000–37FFFF 1B8000–1BFFFF SA63 0111000xxx 64/32 380000–38FFFF 1C0000–1C7FFF SA64 0111001xxx 64/32 390000–39FFFF 1C8000–1CFFFF SA65 0111010xxx 64/32 3A0000–3AFFFF 1D0000–1D7FFF SA66 0111011xxx 64/32 3B0000–3BFFFF 1D8000–1DFFFF SA67 0111100xxx 64/32 3C0000–3CFFFF 1E0000–1E7FFF SA68 0111101xxx 64/32 3D0000–3DFFFF 1E8000–1EFFFF SA69 0111110xxx 64/32 3E0000–3EFFFF 1F0000–1F7FFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 14 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 PPB 26 PPB 27 PPB 28 PPB 29 PPB 30 PPB 31 PPB 32 PPB 33 PPB 34 PPB 35 PPB 36 SA70 0111111xxx 64/32 3F0000–3FFFFF 1F8000–1FFFFF SA71 1000000xxx 64/32 400000–40FFFF 200000–207FFF SA72 1000001xxx 64/32 410000–41FFFF 208000–20FFFF SA73 1000010xxx 64/32 420000–42FFFF 210000–217FFF SA74 1000011xxx 64/32 430000–43FFFF 218000–21FFFF SA75 1000100xxx 64/32 440000–44FFFF 220000–227FFF SA76 1000101xxx 64/32 450000–45FFFF 228000–22FFFF SA77 1000110xxx 64/32 460000–46FFFF 230000–237FFF SA78 1000111xxx 64/32 470000–47FFFF 238000–23FFFF SA79 1001000xxx 64/32 480000–48FFFF 240000–247FFF SA80 1001001xxx 64/32 490000–49FFFF 248000–24FFFF SA81 1001010xxx 64/32 4A0000–4AFFFF 250000–257FFF SA82 1001011xxx 64/32 4B0000–4BFFFF 258000–25FFFF SA83 1001100xxx 64/32 4C0000–4CFFFF 260000–267FFF SA84 1001101xxx 64/32 4D0000–4DFFFF 268000–26FFFF SA85 1001110xxx 64/32 4E0000–4EFFFF 270000–277FFF SA86 1001111xxx 64/32 4F0000–4FFFFF 278000–27FFFF SA87 1010000xxx 64/32 500000–50FFFF 280000–287FFF SA88 1010001xxx 64/32 510000–51FFFF 288000–28FFFF SA89 1010010xxx 64/32 520000–52FFFF 290000–297FFF SA90 1010011xxx 64/32 530000–53FFFF 298000–29FFFF SA91 1010100xxx 64/32 540000–54FFFF 2A0000–2A7FFF SA92 1010101xxx 64/32 550000–55FFFF 2A8000–2AFFFF SA93 1010110xxx 64/32 560000–56FFFF 2B0000–2B7FFF SA94 1010111xxx 64/32 570000–57FFFF 2B8000–2BFFFF SA95 1011000xxx 64/32 580000–58FFFF 2C0000–2C7FFF SA96 1011001xxx 64/32 590000–59FFFF 2C8000–2CFFFF SA97 1011010xxx 64/32 5A0000–5AFFFF 2D0000–2D7FFF SA98 1011011xxx 64/32 5B0000–5BFFFF 2D8000–2DFFFF SA99 1011100xxx 64/32 5C0000–5CFFFF 2E0000–2E7FFF SA100 1011101xxx 64/32 5D0000–5DFFFF 2E8000–2EFFFF SA101 1011110xxx 64/32 5E0000–5EFFFF 2F0000–2F7FFF SA102 1011111xxx 64/32 5F0000–5FFFFF 2F8000–2FFFFF SA103 1100000xxx 64/32 600000–60FFFF 300000–307FFF SA104 1100001xxx 64/32 610000–61FFFF 308000–30FFFF SA105 1100010xxx 64/32 620000–62FFFF 310000–317FFF SA106 1100011xxx 64/32 630000–63FFFF 318000–31FFFF SA107 1100100xxx 64/32 640000–64FFFF 320000–327FFF SA108 1100101xxx 64/32 650000–65FFFF 328000–32FFFF SA109 1100110xxx 64/32 660000–66FFFF 330000–337FFF SA110 1100111xxx 64/32 670000–67FFFF 338000–33FFFF SA111 1101000xxx 64/32 680000–68FFFF 340000–347FFF SA112 1101001xxx 64/32 690000–69FFFF 348000–34FFFF This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 15 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 PPB 37 PPB 38 PPB 39 PPB 40 PPB 41 SA113 1101010xxx 64/32 6A0000–6AFFFF 350000–357FFF SA114 1101011xxx 64/32 6B0000–6BFFFF 358000–35FFFF SA115 1101100xxx 64/32 6C0000–6CFFFF 360000–367FFF SA116 1101101xxx 64/32 6D0000–6DFFFF 368000–36FFFF SA117 1101110xxx 64/32 6E0000–6EFFFF 370000–377FFF SA118 1101111xxx 64/32 6F0000–6FFFFF 378000–37FFFF SA119 1110000xxx 64/32 700000–70FFFF 380000–387FFF SA120 1110001xxx 64/32 710000–71FFFF 388000–38FFFF SA121 1110010xxx 64/32 720000–72FFFF 390000–397FFF SA122 1110011xxx 64/32 730000–73FFFF 398000–39FFFF SA123 1110100xxx 64/32 740000–74FFFF 3A0000–3A7FFF SA124 1110101xxx 64/32 750000–75FFFF 3A8000–3AFFFF SA125 1110110xxx 64/32 760000–76FFFF 3B0000–3B7FFF SA126 1110111xxx 64/32 770000–77FFFF 3B8000–3BFFFF SA127 1111000xxx 64/32 780000–78FFFF 3C0000–3C7FFF SA128 1111001xxx 64/32 790000–79FFFF 3C8000–3CFFFF SA129 1111010xxx 64/32 7A0000–7AFFFF 3D0000–3D7FFF SA130 1111011xxx 64/32 7B0000–7BFFFF 3D8000–3DFFFF SA131 1111100xxx 64/32 7C0000–7CFFFF 3E0000–3E7FFF SA132 1111101xxx 64/32 7D0000–7DFFFF 3E8000–3EFFFF SA133 1111110xxx 64/32 7E0000–7EFFFF 3F0000–3F7FFF SA134 1111111xxx 64/32 7F0000–7FFFFF 3F8000–3FFFFF Table 4. Device OPERATING MODES 64M FLASH USER MODE TABLE Operation Read Write CE# L L OE# L H WE# H L Accelerated Program L H L H V HH A IN V cc X X Vcc±0.3V H X High-Z High-Z High-Z L X H X H X H L L/H L/H X X High-Z High-Z High-Z High-Z High-Z High-Z CMOS Standby Output Disable Hardware Reset B B ±0.3V WP#/AC C L/H (Note 1) A0A21 A IN A IN DQ0DQ7 D OUT D IN D IN DQ8-DQ15 BYTE# BYTE# = V IL = V IH D OUT DQ8DQ14= D IN High-Z, DQ15 = D IN A-1 RESET # H H B B B B B B B B B B B B B B B B B B B B B Notes: 1. Addresses are A21:A0 in word mode; A21:A-1 in byte mode. 2. If WP# = VIL, on the outermost sector remains protected. If WP# = VIH, the outermost sector is unprotected. WP# has an internal pull-up; when unconnected, WP# is at VIH. All sectors are unprotected when shipped from the factory (The Secured Silicon Sector can be factory protected depending on version ordered.) 3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm. Legend L = Logic Low = VIL, H = Logic High = VIH, VHH = 8.5–9.5V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 16 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 B B www.eonssi.com EN29GL064 USER MODE DEFINITIONS Word / Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-DQ15 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8-DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. VIO Control The VIO allows the host system to set the voltage levels that the device generates and tolerates on all inputs and outputs (address, control, and DQ signals). VIO range is 1.65 to VCC. For example, a VIO of 1.65-3.6 volts allows for I/O at the 1.65 or 3.6 volt levels, driving and receiving signals to and from other 1.65 or 3.6 V devices on the same data bus. Read All memories require access time to output array data. In a read operation, data is read from one memory location at a time. Addresses are presented to the device in random order, and the propagation delay through the device causes the data on its outputs to arrive with the address on its inputs. The device defaults to reading array data after device power-up or hardware reset. To read data from the memory array, the system must first assert a valid address on A21-A0, while driving OE# and CE# to VIL. WE# must remain at VIH. All addresses are latched on the falling edge of CE#. Data will appear on DQ15-DQ0 after address access time (tACC), which is equal to the delay from stable addresses to valid output data.The OE# signal must be driven to VIL. Data is output on DQ15-DQ0 pins after the access time (tOE) has elapsed from the falling edge of OE#, assuming the tACC access time has been meet. Page Read Mode The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The page size of the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A21-A3. Address bits A2-A0 in word mode (A2 to A-1 in byte mode) determine the specific word within a page. The microprocessor supplies the specific word location. The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page mode accesses are obtained by keeping the “read-page addresses” constant and changing the “intra-read page” addresses. Autoselect The Autoselect mode provides manufacturer ID, Device identification, and sector protection information, through identifier codes output from the internal register (separate from the memory array) on DQ7DQ0. The device only support to use autoselect command to access autoselect codes. It does not support to apply VID on address pin A9. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 17 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 • The Autoselect command sequence may be written to an address within a sector that is either in the read or erase-suspend-read mode. • The Autoselect command may not be written while the device is actively programming or erasing. • The system must write the reset command to return to the read mode (or erase-suspend-read mode if the sector was previously in Erase Suspend). • When verifying sector protection, the sector address must appear on the appropriate highest order address bits. The remaining address bits are don't care and then read the corresponding identifier code on DQ15-DQ0. Program/Erase Operations These devices are capable of several modes of programming and or erase operations which are described in detail in the following sections. During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is latched on the 1st rising edge of WE# or CE#. Note the following: • When the Embedded Program algorithm is complete, the device returns to the read mode. • The system can determine the status of the program operation by reading the DQ status bits. Refer to the Write Operation Status on page 28 for information on these status bits. • An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.” • Only erase operations can convert a “0” to a “1.” • Any commands written to the device during the Embedded Program/Erase are ignored except the Suspend commands. • Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in progress. • A hardware reset and/or power removal immediately terminates the Program/Erase operation and the Program/Erase command sequence should be reinitiated once the device has returned to the read mode to ensure data integrity. • Programming is allowed in any sequence and across sector boundaries for single word programming operation. • Programming to the same word address multiple times without intervening erases is permitted. Single Word Programming Single word programming mode is one method of programming the Flash. In this mode, four Flash command write cycles are used to program an individual Flash address. The data for this programming operation could be 8 or 16-bits wide. While the single word programming method is supported by most devices, in general Single Word Programming is not recommended for devices that support Write Buffer Programming. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by reading the DQ status bits. • During programming, any command (except the Suspend Program command) is ignored. • The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in progress. • A hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. • Programming to the same address multiple times continuously (for example, “walking” a bit within a word) is permitted. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 18 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 4. Single Word Program This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 19 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Write Buffer Programming Write Buffer Programming allows the system to write a maximum of 16 words in one programming operation. This results in a faster effective word programming time than the standard “word” programming algorithms. The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in which programming occurs. At this point, the system writes the number of “word locations minus 1” that are loaded into the page buffer at the Sector Address in which programming occurs. This tells the device how many write buffer addresses are loaded with data and therefore when to expect the “Program Buffer to Flash” confirm command. The number of locations to program cannot exceed the size of the write buffer or the operation aborts. (Number loaded = the number of locations to program minus 1. For example, if the system programs 6 address locations, then 05h should be written to the device.) The system then writes the starting address/data combination. This starting address is the first address/data pair to be programmed, and selects the “write-buffer-page” address. All subsequent address/data pairs must fall within the elected-write-buffer-page. The “write-buffer-page” is selected by using the addresses A21–A4. The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be performed across multiple “write-bufferpages.” This also means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to load programming data outside of the selected “write-buffer-page”, the operation ABORTs.) After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the write buffer. Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter is decremented for every data load operation. Also, the last data loaded at a location before the “Program Buffer to Flash” confirm command is the data programmed into the device. It is the software's responsibility to comprehend ramifications of loading a write-buffer location more than once. The counter decrements for each data load operation, NOT for each unique write-buffer-address location. Once the specified number of write buffer locations have been loaded, the system must then write the “Program Buffer to Flash” command at the Sector Address. Any other address/data write combinations abort the Write Buffer Programming operation. The Write Operation Status bits should be used while monitoring the last address location loaded into the write buffer. This eliminates the need to store an address in memory because the system can load the last address location, issue the program confirm command at the last loaded address location, and then check the write operation status at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored to determine the device status during Write Buffer Programming. The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device returns to READ mode. The Write Buffer Programming Sequence is ABORTED under any of the following conditions: • Load a value that is greater than the page buffer size during the “Number of Locations to Program” step. • Write to an address in a sector different than the one specified during the Write-Buffer-Load command. • Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address” during the “write buffer data loading” stage of the operation. • Writing anything other than the Program to Buffer Flash Command after the specified number of “data load” cycles. The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 = TOGGLE, DQ5 = 0. This indicates that the Write Buffer Programming Operation was ABORTED. Note that the Secured Silicon sector, autoselect, and CFI functions are unavailable when a program This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 20 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 operation is in progress. Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices are capable of handling multiple write buffer programming operations on the same write buffer address range without intervening erases. Use of the write buffer is strongly recommended for programming when multiple words are to be programmed. Figure 5. Write Buffer Programming Operation This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 21 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Sector Erase Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence. Once the sector erase operation has begun, only the Sector Erase Suspend command is valid. All other commands are ignored. If there are several sectors to be erased, Sector Erase Command sequences must be issued for each sector. That is, only a sector address can be specified for each Sector Erase command. Users must issue another Sector Erase command for the next sector to be erased after the previous one is completed. When the Embedded Erase algorithm is completed, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms. Figure 6. Sector Erase Operation START Write Erase Command Sequence Data Poll from System or Toggle Bit successfully completed Data =FFh? No Yes Erase Done This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 22 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Chip Erase Command Sequence Chip erase is a six-bus cycle operation as indicated by Table 13. These commands invoke the Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory to an all zero data pattern prior to electrical erase. After a successful chip erase, all locations of the chip contain FFFFh. The system is not required to provide any controls or timings during these operations. When the Embedded Erase algorithm is complete, that sector returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer to “Write Operation Status” for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that sector has returned to reading array data, to ensure the entire array is properly erased. Erase Suspend/Erase Resume Commands The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The sector address is required when writing this command. This command is valid only during the sector erase operation. The Sector Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Addresses are don’t-cares when writing the Sector Erase Suspend command. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. After an erase-suspended program operation is complete, the device returns to the erase-suspendread mode. The system can determine the status of the program operation using write operation status bits, just as in the standard program operation. In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to Write Buffer Programming and the Autoselect for details. To resume the sector erase operation, the system must write the Erase Resume command. The address of the erase-suspended sector is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Program Suspend/Program Resume Commands The Program Suspend command allows the system to interrupt an embedded programming operation or a “Write to Buffer” programming operation so that data can read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the programming operation within 15 µs maximum (5 µs typical) and updates the status bits. Addresses are “don't-cares” when writing the Program Suspend command. After the programming operation has been suspended, the system can read array data from any nonsuspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not within a sector in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area, then user must use the proper command sequences to enter and exit this region. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 23 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 The system may also write the Autoselect Command Sequence when the device is in Program Suspend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes are not stored in the memory array. When the device exits the Autoselect mode, the device reverts to Program Suspend mode, and is ready for another valid operation. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the write operation status bits, just as in the standard program operation. The system must write the Program Resume command (address bits are “don't care”) to exit the Program Suspend mode and continue the programming operation. Further writes of the Program Resume command are ignored. Another Program Suspend command can be written after the device has resumed programming. Accelerated Program Accelerated single word programming and write buffer programming operations are enabled through the WP#/ACC pin. This method is faster than the standard program command sequences. If the system asserts VHH on this input, the device automatically enters the Accelerated Program mode and uses the higher voltage on the input to reduce the time required for program operations. The system can then use the Write Buffer Load command sequence provided by the Accelerated Program mode. Note that if a “Write-to-Buffer-Abort Reset” is required while in Accelerated Program mode, the full 3-cycle RESET command sequence must be used to reset the device. Removing VHH from the ACC input, upon completion of the embedded program operation, returns the device to normal operation. • Sectors must be unlocked prior to raising WP#/ACC to VHH. • The WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. • It is recommended that WP#/ACC apply VHH after power-up sequence is completed. In addition, it is recommended that WP#/ACC apply from VHH to VIH/VIL before powering down VCC/ VIO . Write Operation Status The device provides several bits to determine the status of a program or erase operation. The following subsections describe the function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Note that the Data# Polling is valid only for the last word being programmed in the write-buffer-page during Write Buffer Programming. Reading Data# Polling status on any word other than the last word to be programmed in the writebuffer-page returns false status information. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# polling on DQ7 is active, then that sector returns to the read mode. During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 24 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Polling on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7-D00 appears on successive read cycles. Figure 7. Write Operation Status Flowchart DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 25 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 During an Embedded Program or Erase algorithm operation, successive read cycles to any address that is being programmed or erased causes DQ6 to toggle. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100μs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase 2suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7. If a program address falls within a protected sector, DQ6 toggles for approximately 1μs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program Algorithm is complete. Toggle Bit I on DQ6 requires either OE# or CE# to be de-asserted and reasserted to show the change in state. DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erasesuspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Reading Toggle Bits DQ6/DQ2 Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erases operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high. If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erases operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. Note When verifying the status of a write operation (embedded program/erase) of a memory sector, DQ6 and DQ2 toggle between high and low states in a series of consecutive and contiguous status read cycles. In order for this toggling behavior to be properly observed, the consecutive status bit reads must not be interleaved with read accesses to other memory sectors. If it is not possible to temporarily prevent reads to other memory sectors, then it is recommended to use the DQ7 status bit as the alternative method of determining the active or inactive status of the write operation. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 26 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device does not output a 1 on DQ5 if the system tries to program a 1 to a location that was previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device ignores the bit that was incorrectly instructed to be programmed from a 0 to a 1, while any other bits that were correctly requested to be changed from 1 to 0 are programmed. Attempting to program a 0 to a 1 is masked during the programming operation. Under valid DQ5 conditions, the system must write the reset command to return to the read mode (or to the erasesuspend-read mode if a sector was previously in the erase-suspend-program mode). DQ3: Sector Erase Timeout State Indicator After writing a sector erase command sequence, the output on DQ3 can be checked to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) When sector erase starts, DQ3 switches from “0” to “1”. This device does not support multiple sector erase (continuous sector erase) command sequences so it is not very meaningful since it immediately shows as a “1” after the first 30h command. Future devices may support this feature. DQ1: Write to Buffer Abort DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a “1”. The system must issue the “Write to Buffer Abort Reset” command sequence to return the device to reading array data. Table 5. Write Operation Status DQ7 (note 2) DQ6 DQ5 (note 1) DQ3 DQ2 (note 2) DQ1 RY/BY# Embedded Program Algorithm DQ7# Toggle 0 N/A No Toggle 0 0 Embedded Erase Algorithm 0 Toggle 0 1 Toggle N/A 0 Status Standard Mode Program Suspend Mode Erase Suspend Mode Write to Buffer Program Suspend Read Erase Suspend Read Program Suspended Sector Non-Program Suspended Sector Erase Suspended Sector Non-Erase Suspended Sector No Toggle 1 Invalid (Not allowed) 1 Data 1 0 N/A Toggle N/A Data 1 0 Erase Suspend Program (Embedded Program) DQ7# Toggle 0 N/A N/A N/A 0 Busy(note 3) Abort(note 4) DQ7# DQ7# Toggle Toggle 0 0 N/A N/A N/A N/A 0 1 0 0 Notes 1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location. 4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation Writing Commands/Command Sequences During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an address, command, and data. Addresses are latched on the last falling edge of WE# or CE#, while data is latched on the 1st rising edge of WE# or CE#. An erase operation can erase one sector or the This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 27 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 entire device. Table 3 indicate the address space that each sector occupies. The device address space is divided into uniform 32KW/64KB sectors. A sector address is the set of address bits required to uniquely select a sector. ICC2 in “DC Characteristics” represents the active current specification for the write mode. “AC Characteristics” contains timing specification tables and timing diagrams for write operations. RY/BY# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. This feature allows the host system to detect when data is ready to be read by simply monitoring the RY/BY# pin, which is a dedicated output and controlled by CE# (not OE#). Hardware Reset The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP (RESET# Pulse Width), the device immediately terminates any operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the device is ready to accept another command sequence. When RESET# is held at VSS, the device draws VCC reset current (ICC5). If RESET# is held at VIL, but not at VSS, the standby current is greater. RESET# may be tied to the system reset circuitry which enables the system to read the boot-up firmware from the Flash memory upon a system reset. Software Reset Software reset is part of the command set that also returns the device to array read mode and must be used for the following conditions: 1. To exit Autoselect mode 2. When DQ5 goes high during write status operation that indicates program or erase cycle was not successfully completed 3. Exit sector lock/unlock operation. 4. To return to erase-suspend-read mode if the device was previously in Erase Suspend mode. 5. After any aborted operations The following are additional points to consider when using the reset command: • This command resets the sectors to the read and address bits are ignored. • Reset commands are ignored during program and erase operations. • The reset command may be written between the cycles in a program command sequence before programming begins (prior to the third cycle). This resets the sector to which the system was writing to the read mode. • If the program command sequence is written to a sector that is in the Erase Suspend mode, writing the reset command returns that sector to the erase-suspend-read mode. • The reset command may be written during an Autoselect command sequence. • If a sector has entered the Autoselect mode while in the Erase Suspend mode, writing the reset command returns that sector to the erase-suspend-read mode. • If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to Buffer Abort Reset” command sequence to RESET the device to reading array data. The standard RESET command does not work during this condition. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 28 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Advanced Sector Protection/Unprotection The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations in any or all sectors and can be implemented through software and/or hardware methods, which are independent of each other. This section describes the various methods of protecting data stored in the memory array. An overview of these methods in shown in Figure 8. Figure 8a. Advanced Sector Protection/Unprotection for Uniform Sector This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 29 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 8b. Advanced Sector Protection/Unprotection for Top Boot Sector This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 30 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 8c. Advanced Sector Protection/Unprotection for Bottom Boot Sector Lock Register The Lock Register consists of 4 bits. The Secured Silicon Sector Protection Bit is DQ0, Persistent Protection Mode Lock Bit is DQ1, Persistent Sector Protection OTP bit is DQ3 and DYB Lock Boot Bit is DQ4. If DQ0 is ‘0’, it means that the Customer Secured Silicon area is locked and if DQ0 is ‘1’, it means that it is unlocked. When DQ1 is set to ‘0’, the device is used in the Persistent Protection Mode. DQ3 is This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 31 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 programmed in the EON factory. When the device is programmed to disable all PPB erase command, DQ3 outputs a ‘0’, when the lock register bits are read. Similarly, if the device is programmed to enable all PPB erase command, DQ3 outputs a ‘1’ when the lock register bits are read. Likewise the DQ4 bit is also programmed in the EON Factory. DQ4 is the bit which indicates whether Volatile Sector Protection Bit (DYB) is protected or not after boot-up. When the device is programmed to set all Volatile Sector Protection Bit protected after power-up, DQ4 outputs a ‘0’ when the lock register bits are read. Similarly, when the device is programmed to set all Volatile Sector Protection Bit unprotected after power-up, DQ4 outputs a ‘1’. Each of these bits in the lock register are non-volatile. DQ15- DQ5 are reserved and will be 1’s. Table 6. Lock Register DQ15-5 DQ4 Reserved DYB Lock Boot Bit DQ3 PPB One Time Programmable Bit 0 = protected all 0 = All PPB Erase DYB after boot-up Command disabled (default = 1) 1 = unprotected all 1 = All PPB Erase DYB after boot-up Command enabled (default = 1) (default = 1) DQ2 DQ1 DQ0 Reserved Persistent Protection Mode Lock Bit Secured Silicon Sector Protection Bit 0 = protected 0 = Persistent (default = 1) Protection enabled 1 = unprotect (default = 1) (default = 0) Notes: 1. After the Lock Register Bits Command Set Entry command sequence is written, reads and writes for all Sector are disabled, while reads from other sectors are allowed until exiting this mode. 2. Only DQ0 could be change by Lock Register Bits Command for user. Others bits were set by Factory. After selecting a sector protection method, each sector can operate in any of the following three states: 1. Constantly locked: The selected sectors are protected and can not be reprogrammed unless PPB lock bit is cleared via hardware reset, or power cycle. 2. Dynamically locked: The selected sectors are protected and can be altered via software commands. 3. Unlocked: The sectors are unprotected and can be erased and/or programmed. Persistent Protection Bits The Persistent Protection Bits are unique and nonvolatile. For uniform sector device, Sector 0~3 and 124~127 have one PPB for each sectors and for Sector 4~123 have one PPB every four sectors. For top boot sector device, Sector 0~123 are 1 PPB per 4 sectors and Sector 124~134 have PPB for each boot sector. For bottom boot sector device, Sector 0~10 have PPB for each boot sector and Sector 11~134 are 1 PPB per 4 sectors(refer to Figure 8a, 8b, 8c and Table 3a, 3b, 3c). The PPB has the same endurances as the Flash memory. Preprogramming and verification prior to erasure are handled by the device, and therefore do not require system monitoring. Notes 1. Each PPB is individually programmed and all are erased in parallel. 2. While programming PPB for the four sectors and Data polling on programming PPB address, array data can not be read from any sectors. 3. Entry command disables reads and writes for all sectors selected. 4. Reads within that sector return the PPB status for that sector. 5. All Reads must be performed using the read mode. 6. The specific sector address are written at the same time as the program command. 7. If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-out without programming or erasing the PPB. 8. There are no means for individually erasing a specific PPB and no specific sector address is required for this operation. 9. Exit command must be issued after the execution which resets the device to read mode and reenables reads and writes for all sectors. 10. The programming state of the PPB for given sectors can be verified by writing a PPB Status Read Command to the device as described by the flow chart shown in Figure 9. User only can use DQ6 and RY/BY# pin to detect programming status. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 32 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 9. PPB Program Algorithm Note: BA = base address This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 33 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Dynamic Protection Bits Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYBs only control the protection scheme for unprotected sectors that have their PPBs cleared (erased to “1”). By issuing the DYB Set or Clear command sequences, the DYBs are set (programmed to “0”) or cleared (erased to “1”), thus placing each sector in the protected or unprotected state respectively. This feature allows software to easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. Notes 1. The DYBs can be set (programmed to “0”) or cleared (erased to “1”) as often as needed. When the parts are first shipped, the PPBs are cleared (erased to “1”) and upon power up or reset, the DYBs can be set or cleared depending upon the ordering option chosen. 2. If the option to clear the DYBs after power up is chosen, (erased to “1”), then the sectorsmay be modified depending upon the PPB state of that sector (see Table 7). 3. The sectors would be in the protected state If the option to set the DYBs after power up is chosen (programmed to “0”). 4. It is possible to have sectors that are persistently locked with sectors that are left in the dynamic state. 5. The DYB Set or Clear commands for the dynamic sectors signify protected or unprotectedstate of the sectors respectively. However, if there is a need to change the status of the persistently locked sectors, a few more steps are required. First, the PPB Lock Bit must be cleared by either putting the device through a power-cycle, or hardware reset. The PPBs can then be changed to reflect the desired settings. Setting the PPB Lock Bit once again locks the PPBs, and the device operates normally again. 6. To achieve the best protection, it is recommended to execute the PPB Lock Bit Set command early in the boot code and protect the boot code by holding WP#/ACC = VIL. Note that the PPB and DYB bits have the same function when WP#/ACC = VHH as they do when ACC =VIH. Persistent Protection Bit Lock Bit The Persistent Protection Bit Lock Bit is a global volatile bit for all sectors. When set (programmed to “0”), it locks all PPBs and when cleared (erased to “1”), allows the PPBs to be changed. There is only one PPB Lock Bit per device. Notes 1. No software command sequence unlocks this bit, but only a hardware reset or a power-up clears this bit. 2. The PPB Lock Bit must be set (programmed to “0”) only after all PPBs are configured to the desired settings. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 34 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 10. Lock Register Program Algorithm Advanced Sector Protection Software Examples Table 7. Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 35 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Table 7 contains all possible combinations of the DYB, PPB, and PPB Lock Bit relating to the status of the sector. In summary, if the PPB Lock Bit is locked (set to “0”), no changes to the PPBs are allowed. The PPB Lock Bit can only be unlocked (reset to “1”) through a hardware reset or power cycle. See also Figure 9 for an overview of the Advanced Sector Protection feature. Hardware Data Protection Methods The device offers two main types of data protection at the sector level via hardware control: • When WP#/ACC is at VIL, the either the highest or lowest sector is locked (device specific). There are additional methods by which intended or accidental erasure of any sectors can be prevented via hardware means. The following subsections describes these methods: WP#/ACC Method The Write Protect feature provides a hardware method of protecting one outermost sector. This function is provided by the WP#/ACC pin and overrides the previously discussed Sector Protection/Unprotection method. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the highest or lowest sector independently of whether the sector was protected or unprotected using the method described in Advanced Sector Protection/Unprotection. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or unprotected. The WP#/ACC pin must be held stable during a command sequence execution. WP# has an internal pull-up; when unconnected, WP# is set at VIH. Note If WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control inputs to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch Protection” Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Power-Up Write Inhibit If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 36 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Power Conservation Modes Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at VCC ± 0.3 V. The device requires standard access time (tCE) for read access, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC4 in “DC Characteristics” represents the standby current specification Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Hardware RESET# Input Operation The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence to ensure data integrity. When RESET# is held at VSS ± 0.3 V, the device draws ICC reset current (ICC5). If RESET# is held at VIL but not within VSS ± 0.3 V, the standby current is greater. RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Output Disable (OE#) When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high impedance state. (With the exception of RY/BY#.) Secured Silicon Sector Flash Memory Region The Secured Silicon Sector provides an extra Flash memory region. The Secured Silicon Sector is 128 words in length and all Secured Silicon reads outside of the 128-word address range returns invalid data. The Secured Silicon Sector Indicator Bit, DQ7, (at Autoselect address 03h) is used to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. Please note the following general conditions: • On power-up, or following a hardware reset, the device reverts to sending commands to the normal address space. • Reads outside of sector SA0 return memory array data. • Sector SA0 is remapped from memory array to Secured Silicon Sector array. • Once the Secured Silicon Sector Entry Command is issued, the Secured Silicon Sector Exit command must be issued to exit Secured Silicon Sector Mode. • The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or Embedded Erase algorithm. • When sector SA0 is suspended, if system enters Secured Silicon Sector mode, the Secured Silicon Sector Region cannot be read. If the system suspends the flash in other sectors except SA0, Secured Silicon Sector Region can be read normally. • The ACC function is not available when the Secured Silicon Sector is enabled. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 37 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Table 8. Secured Silicon Sector Addresses Secured Silicon Sector Address Range 000000h-000007h Reserve for Factory 000008h-00007Fh Determined by customer Customer Lockable Secured Silicon Sector The Customer Lockable Secured Silicon Sector is always shipped unprotected (DQ0 set to “1”), allowing customers to utilize that sector in any manner they choose. If the security feature is not required, the Secured Silicon Sector can be treated as an additional Flash memory space. Please note the following: • Once the Secured Silicon Sector area is protected, the Secured Silicon Sector Indicator Bit (DQ0) is permanently set to “0.” • The Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. The Secured Silicon Sector lock must be used with caution as once locked, there is no procedure available for unlocking the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. • The accelerated programming (ACC) is not available when the Secured Silicon Sector is enabled. • Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence which return the device to the memory array at sector 0. • The address 0h~7h in Secured Silicon Sector is reserved for Factory. Secured Silicon Sector Entry/Exit Command Sequences The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Secured Silicon Sector Entry Command allows the following commands to be executed • Read customer and factory Secured Silicon areas • Program the customer Secured Silicon Sector After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by sector SA0 within the memory array. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 38 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 COMMON FLASH INTERFACE (CFI) The common flash interface (CFI) specification outlines device and host systems software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC IDindependent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 9~11.In word mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode and the system can read CFI data at the addresses given in Tables 9~11. The system must write the reset command to return the device to the autoselect mode. Table 9. CFI Query Identification String Addresses (Word Mode) 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h Description Query Unique ASCII string “QRY” Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists) Table 10. System Interface String Addresses (Word Mode) Data 1Bh 0027h 1Ch 0036h 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h 0000h 0000h 0003h 0004h 0009h 0000h 0005h 0005h 0004h 0000h Description Vcc Min (write/erase) DQ7-DQ4: volt, DQ3-DQ0: 100mV Vcc Max (write/erase) DQ7-DQ4: volt, DQ3-DQ0: 100mV Vpp Min voltage (00h = no Vpp pin present) Vpp Max voltage (00h = no Vpp pin present) Typical timeout per single byte/word write 2N µs Typical timeout for min size buffer write 2N µs (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max timeout for byte/word write 2N times typical Max timeout for buffer write 2N times typical Max timeout per individual block erase 2N times typical Max timeout for full chip erase 2N times typical (00h = not supported) This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 39 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Table 11. Device Geometry Definition Addresses (Word mode) 27h 28h 29h 2Ah 2Bh Data 0017h 0002h 0000h 0005h 0000h 2Ch 00xxh 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch 00xxh 0000h 00x0h 000xh 00xxh 0000h 0000h 000xh 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h Description Device Size = 2N bytes. 2**23=8MB=64Mb Flash Device Interface Description (refer to CFI publication 100); 01h = X16 only; 02h = x8/x16 Max number of byte in multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) Erase Block Region 1 Information (refer to the CFI specification of CFI publication 100) EN29GL064 H and L : 007Fh, 0000h, 0000h, 0001h EN29GL064 B and T : 0007h, 0000h, 0020h, 0000h Erase Block Region 2 Information (refer to the CFI specification of CFI publication 100) EN29GL064 H and L : 0000h, 0000h, 0000h, 0000h EN29GL064 B and T : 007Eh, 0000h, 0000h, 0001h Erase Block Region 3 Information (refer to the CFI specification of CFI publication 100) Erase Block Region 4 Information (refer to the CFI specification of CFI publication 100) Table 12. Primary Vendor-specific Extended Query Addresses (Word Mode) 40h 41h 42h 43h 44h Data 0050h 0052h 0049h 0031h 0034h 45h 000Ch 46h 0002h 47h 0001h Sector Protect 0 = Not Supported, X = Minimum number of sectors per group 48h 0000h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 0003h Sector Protect/Unprotect Scheme 00h = High Voltage Sector Protection 01h = High Voltage + In-System Sector Protection 02h = HV + In-System + Software Command Sector Protection 03h = Software Command Sector Protection 4Ah 0000h 4Bh 0000h Description Query Unique ASCII string "PRI" Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (Bits 1-0) 00 = Required, 01 = Not Required Technology (Bits 5-2) 0001 = 0.18um, 0010 = 0.13um, 0011 = 90nm Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Simultaneous Operation 00 = Not supported, X = Number of Sectors Burst Mode Type 00 = Not Supported, 01 = Supported This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 40 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 4Ch 0002h 4Dh 0085h 4Eh 0095h 4Fh 000xh 50h 0001h 52h 0008h 53h 000Fh 54h 0009h 55h 56h 0005h 0005h 57h 0000h Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page Minimum WP#/ACC (Acceleration) Supply Voltage 00 = Not Supported, DQ7-DQ4: Volts, DQ3=DQ0: 100mV Maximum WP#/ACC (Acceleration) Supply Voltage 00 = Not Supported, DQ7-DQ4: Volts, DQ3=DQ0: 100mV Top/Bottom Boot Sector Flag 02 = Bottom Boot Device, 03 = Top Boot Device 04 = Uniform sectors bottom WP# protect 05 = Uniform sectors top WP# protect Program Suspend 00 = Not Supported, 01 = Supported Secured Silicon Sector (Customer OTP Area) Size 2N bytes Hardware Reset Low Time-out during an embedded algorithm to read mode Maximum 2N ns Hardware Reset Low Time-out not during an embedded algorithm to read mode Maximum 2N ns Erase Suspend Latency Maximum 2N µs Program Suspend Latency Maximum 2N µs Bank Organization 00 = Data at 4Ah is zero, X = Number of Banks This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 41 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Cycles Table 13. EN29GL064 Command Definitions Command Sequence Bus Cycles 1 st Cycle Addr Data P P Read 1 RA RD Reset 1 XXX F0 Autoselect Manufacturer ID Device ID Uniform Device ID Top Boot Device ID Bottom Boot Sector Protect Verify Program Write to Buffer Program Buffer to Flash Write to Buffer Abort Reset Chip Erase Sector Erase Word 555 4 Byte Word Byte Word Byte Word Byte 4 4 Word Word Byte 555 AAA 555 AAA 555 AAA Word Byte Word Byte Word Byte Word Byte Word Byte AA AA AA 6 1 3 6 6 555 AAA 555 AAA PA 555 AAA 555 AAA 555 AAA AA AA AA 1 XXX Erase/Program Resume 1 XXX 30 Secured Silicon Sector Entry Secured Silicon Sector Exit Word CFI Query Byte Accelerated Program 3 4 555 555 55 AA XX AA AA 2 55 55 55 2AA 555 2AA 555 55 555 SA 6 th 7F 1C 7F 1C 227E X0E X1C X0E X1C X0E X1C 220C 0C 2210 10 2210 10 X0F X1E X0F X1E X0F X1E 2201 01 2201 01 2200 00 A0 PA PD 25 SA WC PA PD WBL PD 90 90 90 90 AAA th 000 100 000 200 X01 X02 X01 X02 X01 X02 (SA) X02 (SA) X04 AAA 55 5 Cycle Addr Data 555 55 th Cycle Addr Data 90 555 AAA 555 AAA 555 AAA 4 P P 7E 227E 7E 227E 7E P P P Addr P Cycle Data 00 01 00 01 29 Erase/Program Suspend 1 2AA 555 2AA 555 2AA 555 555 AA Cycle Addr Data P AAA 2AA AA rd P 55 AA AAA 3 555 555 555 4 Cycle Addr Data P AA 4 Byte nd P 2AA AAA 4 2 2AA 555 2AA 555 2AA 555 55 55 55 555 555 555 AAA 555 AAA F0 80 80 555 AAA 555 AAA AA AA 2AA 555 2AA 555 55 55 555 AAA SA B0 2AA 2AA 55 55 PA PD 555 555 88 90 XX 00 98 A0 Legend X = Don’t care RA = Address of the memory to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of the WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits Amax–A16 uniquely select any sector. WBL = Write Buffer Location. The address must be within the same write buffer page as PA. WC = Word Count is the number of write buffer locations to load minus 1 and maximum value is 31 for word and byte mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 42 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com 10 30 EN29GL064 Global Volatile Freeze Global Non-Volatile Lock Register Command Sequence Command Set Entry Bus Cycles 1 st 2 nd 3 rd Cycle Addr Data Cycle Addr Data Cycle Addr Data P P P P P P Word 3 555 AA 2AA 55 555 40 Byte AAA 40 3 AAA AA 55 55 Program 2 XXX A0 XXX Data Read 1 00 RD Command Set Exit 2 XXX 90 XXX 00 Word 3 555 AA 2AA 55 555 C0 Byte 3 AAA AA 55 55 AAA C0 2 XXX A0 SA 00 All PPB Erase 2 XXX 80 00 30 PPB Status Read 1 SA RD PPB Command Set Exit 2 XXX 90 XXX 00 PPB Lock Command Set Entry PPB Lock Set Word 3 555 AA 2AA 55 555 50 Byte 3 AAA AA 555 55 AAA 50 XXX 00 PPB Command Set Entry PPB Program 2 XXX A0 PPB Lock Status Read PPB Lock Command Set Exit 1 XXX RD 2 XXX 90 XXX 00 Word 3 555 AA 2AA 55 555 E0 Byte 3 AAA AA 555 55 AAA E0 DYB Command Set Entry Volatile Cycles Table 14. EN29GL064 Command Definitions DYB Set 2 XXX A0 SA 00 DYB Clear 2 XXX A0 SA 01 DYB Status Read 1 SA RD DYB Command Set Exit 2 XXX 90 XXX 00 4 th Cycle Addr Data P P 5 th Cycle Addr Data P 6 P 43 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 P Addr Legend X = Don’t care RD(0) = Read data. SA = Sector Address. Address bits Amax–A16 uniquely select any sector. PWD = Password PWDx = Password word0, word1, word2, and word3. Data = Lock Register Contents: PD(0) = Secured Silicon Sector Protection Bit, PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection Mode Lock Bit. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. th P www.eonssi.com Cycle Data EN29GL064 Table 15. DC Characteristics (Ta = - 40°C to 85°C; VCC = 2.7-3.6V) Symbol Parameter ILI Input Leakage Current ILO Output Leakage Current ICC1 VCC Active Read Current IIO2 VIO Non-Active Output ICC2 VCC Intra-Page Read Current ICC3 Test Conditions Min Typ Max Unit 0V≤ VIN ≤ Vcc ±5 µA 0V≤ VOUT ≤ Vcc ±1 µA 5MHz 15 30 mA 10MHz 25 45 mA CE# = VIL , OE# = VIH CE# = VIL , OE# = VIH , VCC = VCCmax, f = 10 MHz CE# = VIL , OE# = VIH , VCC = VCCmax, f = 33 MHz 0.2 10 mA 1 10 5 15 VCC Active Erase/ Program Current CE# = VIL , OE# = VIH , VCC = VCCmax 20 40 mA ICC4 VCC Standby Current CE#, RESET# = VCC ± 0.3 V, OE# = VIH , VCC = VCC max VIL = Vss + 0.3 V/-0.1V, 2.0 20 µA ICC5 VCC Reset Current RESET# = Vss ± 0.3V 2.0 20 µA ICC6 Automatic Sleep Mode VIH = Vcc ± 0.3V VIL = Vss ± 0.3V 2.0 20 µA ACC Accelerated Program Current CE# = VIL, OE# = VIH, VCC = VCCmax, WP#/ACC = VHH 3 10 IACC 15 30 CE# = VIL; OE# = VIH ; VCC = VCC max mA WP#/ACC pin VCC pin mA VIL Input Low Voltage -0.5 VIH Input High Voltage 0.7 x VIO 0.3 x VIO VCC + 0.3 VHH Acceleration Program Voltage 8.5 9.5 V VOL Output Low Voltage IOL = 100μA 0.15 x VIO V VOH Output High Voltage CMOS IOH = -100μA VLKO Supply voltage (Erase and Program lock-out) 0.85 x VIO 2.3 V V V 2.5 V Notes: 1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS supply voltages. 2. Maximum ICC specifications are tested with Vcc = Vcc max. 3. Not 100% tested. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 44 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 11. Test Conditions Table 16. Test Specifications Test Conditions -70 Unit Output Load Capacitance, CL 30 pF Input Rise and Fall times 5 ns Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 0.0- VIO V 0.5 VIO V 0.5 VIO V B B This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 45 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 AC CHARACTERISTICS Table 17. Read-only Operations Characteristics Parameter Symbols JEDEC Standard Speed Test Setup Description Unit -70 tAVAV tRC Read Cycle Time tAVQV tACC Address to Output Delay tELQV tCE Chip Enable To Output Delay tPACC tGLQV Min 70 ns CE# = VIL OE#= VIL Max 70 ns OE#= VIL Max 70 ns Page Access Time Max 25 ns tOE Output Enable to Output Delay Max 25 ns tEHQZ tDF Chip Enable to Output High Z Max 20 ns tGHQZ tDF Output Enable to Output High Z Max 20 ns tAXQX tOH Output Hold Time from Addresses, CE# or OE#, whichever occurs first Min 0 ns tOEH Output Enable Hold Time Min 0 ns Min 10 ns Read Toggle and DATA# Polling Notes: High Z is Not 100% tested. Figure 12. AC Waveforms for READ Operations tRC Addresses Addresses Stable tACC CE# tDF tBOEB OE# tOEH WE# tCE tOH HIGH Z Outputs Output Valid HIGH Z RESET# RY/BY# 0V This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 46 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 13. Page Read Operation Timings Note: Addresses are A2:A-1 for byte mode. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 47 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 AC CHARACTERISTICS Table 18. Hardware Reset (RESET#) Paramete r Std tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 Description RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 48 Test Setup Min Min Min Min Min Speed -70 10 500 50 0 50 Max 20 us Max 500 ns ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 Unit us ns ns ns ns www.eonssi.com EN29GL064 Figure 14. AC Waveforms for RESET# Reset# Timings tRB1 CE#, OE# WE# tREADY1 tRB2 RY/BY# RESET# tRP1 Reset Timing during Embedded Algorithms CE#, OE# tRH RY/BY# RESET# tRP2 tREADY2 Reset Timing NOT during Embedded Algorithms This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 49 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 AC CHARACTERISTICS Table 19. Word / Byte Configuration (BYTE#) Std Parameter tBCS tCBH tRBH Speed Test Setup Description Byte# to CE# switching setup time CE# to Byte# switching hold time RY/BY# to Byte# switching hold time -70 Min Min Min 0 0 0 Unit ns ns ns Figure 15. AC Waveforms for BYTE# CE# OE# Byte# tCBH tBCS Byte# timings for Read Operations CE# WE# Byte# tRBH tBCS RY/BY# Byte #timings for Write Operations Note: Switching BYTE# pin not allowed during embedded operations This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 50 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 AC CHARACTERISTICS Table 20. Write (Erase/Program) Operations Parameter Symbols Speed Description Unit JEDEC Standard tAVAV tWC Write Cycle Time Min 70 ns tAVWL tAS Address Setup Time Min 0 ns tWLAX tAH Address Hold Time Min 45 ns tDVWH tDS Data Setup Time Min 30 ns tWHDX tDH Data Hold Time Min 0 ns Read Toggle and DATA# Polling Read Recovery Time before Write (OE# High to WE# Low) MIn 0 ns Min 10 ns Min 0 ns tOEH -70 Output Enable Hold Time tGHWL tGHWL tELWL tCS CE# SetupTime Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWHDL tWPH Write Pulse Width High Min 20 ns Write Buffer Program Operation (Note 2, 3) Typ 100 µs Typ 8 µs Max 200 µs Typ 0.1 s Max 2 s Chip Erase Operation Typ 16 s tVHH VHH Rise and Fall Time Min 250 ns tVCS Vcc Setup Time Min 50 µs WE# High to RY/BY# Low Max 70 ns Recovery Time from RY/BY# Min 0 ns tWHWH1 tWHWH2 tWHWH1 tWHWH2 t BUSY B tRB Programming Operation (Word AND Byte Mode) Sector Erase Operation Notes: 1. Not 100% tested. 2. See table.22 Erase and Programming Performance for more information. 3. For 1~16 words bytes programmed. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 51 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 AC CHARACTERISTICS Table 21. Write (Erase/Program) Operations Alternate CE# Controlled Writes Parameter Symbols Speed Description Unit JEDEC Standard tAVAV tWC Write Cycle Time Min 70 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 30 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time before Write (OE# High to CE# Low) Min 0 ns tWLEL tWS WE# SetupTime Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP Write Pulse Width Min 35 ns tEHEL tCPH Write Pulse Width High Min 20 ns Write Buffer Program Operation (Note 2, 3) Typ 100 µs Typ 8 µs Max 200 µs Typ 0.1 s Max 2 s tWHWH1 tWHWH2 tWHWH1 tWHWH2 -70 Programming Operation (Byte AND word mode) Sector Erase Operation Notes: 1. Not 100% tested. 2. See table.22 Erase and Programming Performance for more information. 3. For 1~16 words bytes programmed. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 52 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 AC CHARACTERISTICS Figure 16. AC Waveforms for Chip/Sector Erase Operations Timings Erase Command Sequence (last 2 cycles) tAS tWC Addresses 0x2AA Read Status Data (last two cycles) tAH SA VA VA 0x555 for chip erase CE# tGHWL tCH OE# tWP WE# tWPH tCS 0x55 Data tDS tWHWH2 0x30 tDH tBUSY Status 10 for chip erase DOUT tRB RY/BY# VCC tVCS Notes: 1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address. 2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command sequence. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 53 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 17. Program Operation Timings Program Command Sequence (last 2 cycles) tAS tWC Addresses 0x555 Program Command Sequence (last 2 cycles) tAH PA PA PA CE# tGHWL OE# tCH tWP WE# tWPH tCS Data OxA0 tDS RY/BY# tWHWH1 Status PD tDH DOUT tRB tBUSY tVCS VCC Notes: 1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address. 2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 54 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 18. AC Waveforms for /DATA Polling During Embedded Algorithm Operations tRC Addresses VA VA VA tACC tCH tCE CE# tOE OE# tOEH tDF WE# tOH DQ[7] Complement DQ[6:0] Status Data Comple -ment Status Data Valid Data True True Valid Data tBUSY RY/BY# Notes: 1. VA=Valid Address for reading Data# Polling status data 2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle. Figure 19. AC Waveforms for Toggle Bit During Embedded Algorithm Operations tRC VA Addresses tCH VA VA VA tACC tCE CE# tOE OE# tOEH WE# tDF tOH Valid Status DQ6, DQ2 tBUSY (first read) Valid Status (second read) Valid Status Valid Data (stops toggling) RY/BY# This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 55 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Figure 20. Alternate CE# Controlled Write Operation Timings PA for Program SA for Sector Erase 0x555 for Chip Erase 0x555 for Program 0x2AA for Erase Addresses VA tWC tAS tAH WE# tWH tGHEL OE# tCP tCPH tWS CE# tDS tWHWH1 / tWHWH2 tBUSY tDH Data Status 0xA0 for Program 0x55 for Erase DOUT PD for Program 0x30 for Sector Erase 0x10 for Chip Erase RY/BY tRH Reset# Notes: PA = address of the memory location to be programmed. PD = data to be programmed at byte address. VA = Valid Address for reading program or erase status Dout = array data read at VA Shown above are the last two cycles of the program or erase command sequence and the last status read cycle Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command sequence. Figure 21. DQ2 vs. DQ6 Enter Embedded Erase WE# Enter Erase Suspend Program Erase Suspend Erase Erase Resume Enter Suspend Program Enter Suspend Read Erase Suspend Read Erase Erase Complete DQ6 DQ2 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 56 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 TABLE 22. ERASE AND PROGRAMMING PERFORMANCE Typ Limits Max Unit Sector Erase Time 0.1 2 sec Chip Erase Time 16 60 sec Byte Programming Time 8 200 µs Word Programming Time 8 200 µs Byte 67.2 201.6 Word 33.6 100.8 Parameter Chip Programming Time Total Write Buffer time 100 ACC Total Write Buffer time 60 Erase/Program Endurance 100K sec Comments Excludes 00h programming prior to erasure Excludes system level overhead µs Minimum 100K cycles cycles Notes: 1. Typical program and erase times assume the following conditions: room temperature, 3V and checkboard pattern programmed. 2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles. Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Note: Test conditions are Temperature = 25°C and f = 1.0 MHz. Table 24. DATA RETENTION Parameter Description Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Data Retention Time This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 57 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 ABSOLUTE MAXIMUM RATINGS Parameter Value Unit Storage Temperature -65 to +150 °C Plastic Packages -65 to +125 °C -55 to +125 °C 200 mA OE#, RESET# and WP#/ACC2 -0.5 to + 9.5 V All other pins 3 -0.5 to Vcc+0.5 V -0.5 to + 4.0 V Ambient Temperature With Power Applied Output Short Circuit Current1 P P P P P Voltage with Respect to Ground P P P Vcc Notes: 1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second. 2. Minimum DC input voltage on OE#, RESET# and WP#/ACC pins is –0.5V. During voltage transitions, OE#, RESET# and WP#/ACC pins may undershoot V ss to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns. See figure below. Maximum DC input voltage on OE#, and RESET# is 8.5V which may overshoot to 9.5V for periods up to 20ns. 3. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot V ss to –1.0V for periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is V cc + 0.5 V. During voltage transitions, outputs may overshoot to V cc + 1.5 V for periods up to 20ns. See figure below. 4. Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability. B B B B B B RECOMMENDED OPERATING RANGES 1 P P Parameter Value Unit -40 to 85 °C Full Voltage Range: 2.7 to 3.6V V Ambient Operating Temperature Industrial Devices Operating Supply Voltage Vcc 1. B B Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed. Vcc +1.5V Maximum Negative Overshoot Waveform This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Maximum Positive Overshoot Waveform 58 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 FIGURE 22. 56L TSOP 14mm x 20mm package outline SYMBOL MIN. --0.05 0.95 --------0.17 0.5 0.08 DIMENSION IN MM NOR ----1.00 20.00 18.40 14.00 0.50 0.22 0.60 0.15 A A1 A2 D D1 E e b L R 0 θ 0 Note : 1. Coplanarity: 0.1 mm 0 3 MAX 1.20 0.15 1.05 --------0.27 0.70 0.20 0 5 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 59 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 FIGURE 23. 64-ball Ball Grid Array (BGA), 11 X13 mm, Pitch 1mm package outline SYMBOL DIMENSION IN MM A MIN. - -- NOR - -- MAX 1.40 A1 A2 0.40 0.60 0.50 0.66 0.60 0.76 D E D1 12.90 10.90 - -- 13.00 11.00 7.00 13.10 11.10 - -- E1 e b - -- -0.50 7.00 1.00 0.60 - -- -0.70 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 60 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Purpose Eon Silicon Solution Inc. (hereinafter called “Eon”) is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the same as that of Eon delivered before. Please be advised with the change and appreciate your kindly cooperation and fully support Eon’s product family. Eon products’ Top Marking cFeon Top Marking Example: cFeon Part Number: XXXX-XXX Lot Number: XXXXX Date Code: XXXXX For More Information Please contact your local sales office for additional information about Eon memory solutions. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 61 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 ORDERING INFORMATION EN29GL064 H - 70 Z I P PACKAGING CONTENT P = RoHS compliant TEMPERATURE RANGE I = Industrial (-40°C to +85°C) PACKAGE Z = 56-pin TSOP BA = 64-Ball Ball Grid Array (BGA) 1.0mm pitch, 11mm x 13mm package SPEED 70 = 70ns SECTOR for WRITE PROTECT (WP#/ACC=L) H = highest address sector protected L = lowest address sector protected T = Top boot Sector B = Bottom boot Sector BASE PART NUMBER EN = Eon Silicon Solution Inc. 29GL = FLASH, 3V Page Mode Flash Memory 064 = 64 Megabit (8M x 8 / 4M x 16) The valid combinations of EN29GL064. Base Part Number EN29GL064 Sector for Write Protect (WP#/ACC=L) Speed Package Temperature Packaging Content H 70 Z, BA I P L 70 Z, BA I P This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 62 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Appendix ERRATA SHEET 1. INTRODUCTION This errata sheet describes the functional deviation known at the release date of this document. 2. Problem Write Buffer Program timing problem In general, the address setup time to CE# is 0ns. Due to timing problem, it may program to wrong address by Write Buffer Program function if address setup time is 0ns~1.5ns. 3. Work-around For Write Buffer Program function, we recommend minimum 5ns address to CE# setup time (address valid 5ns before CE# goes low). In the case where CE# is kept low throughout the program buffer to flash command entry, A[max:12] should not be changes between Data=25h, Data=WC cycles to last Data= PD cycles and Data=29h cycle. Address Address Stable 5ns CE# WE# Data This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 63 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com EN29GL064 Revisions List Revision No A B C D Description Date Preliminary 2009/03/20 1. Add internal pull-up description for WP# pin in Table1 in Page 4 2. Add WP#/ACC, VIO pin in Figure3 in Page 4 3. Modify tOE from 30ns to 25ns in Table 17 in page 40 and Page 5 4. Add Secured Silicon Sector Entry/Exit command in Table13 5. Modify typo from Sector Erase Suspend to Erase/Program Suspend, from Sector Erase Resume to Erase/Program resume in Table13 6. Del table 22 and Figure 20 Temporary Sector Unprotect Timing table and Diagram and Figure 21.Sector Protect/Unprotect Timing Diagram 7. Add ACC and total write buffer time spec in Table 22. 8. Modify DC Characteristics in table 15 2009/05/12 VHH from 10.5~11.5V to 8.5~9.5V ICC1 5MHz 20Æ15mA typ, 10MHz 30Æ25mA typ ICC4, ICC5 and ICC6 1Æ1.5uA typ, 5Æ10uA max Add IIO2 and IACCspec 9. Del apply VID on address pin A9 to access autoselect codes function. ( Remove TABLE 5 and modify description Autoselect section for using High voltage to get Autoselect Codes ) 10. Modify A9 spec from 9.5V to Vcc+0.5V in ABSOLUTE MAXIMUM RATINGS 1. Modify naming for DQ0 OTP Lock Bit to Secured Silicon Sector Protection Bit in Page 33 2. Modify Table.8 Secured Silicon Sector Address Range 000000h000007h from Determined by customer to Reserve for Factory 3. Add note “The address 0h~7h in Secured Silicon Sector is reserved for Factory“ in Page 39 2009/7/14 4. Update FIGURE 24. 64 ball Fortified Ball Grid Array (FBGA), 11 X13 mm, Pitch 1mm package outline in page 61 5. Modify from Sector 0 to all sectors in note 1 of Table 6 and note 2, 3 and note 9 of PPB section in page 33 6. Add “User only can use DQ6 and RY/BY# pin to detect programming status” in note 10 in page 33 1. Add the 48-Ball (TFBGA) package information in page 1, 3, 61 and 64. 2. Correct the Persistent Protection Bits status in page 31, 32 and 33. (1) Top boot: Sector 0~123 are 1 PPB per 4 sectors, Sector 124~134 have PPB for each boot sector. 2009/07/22 (2) Bottom boot: Sector 0~10 have PPB for each boot sector, Sector 11~134 are 1 PPB per 4 sectors 3. Change the package code of 64-ball BGA in page 64. E F G H I J K L M Add the valid combinations of EN29GL064 on page 64 2009/09/07 Add a note "when sector SA0 is suspended, if system enters Secured 2009/11/02 Sector mode,..." on page 38. Add Write Buffer byte mode command and note that maximum value is 31 2010/03/15 for word and byte mode in page 43 Correct the typo for The valid combinations of EN29GL064 table on 2010/04/06 page 64. 1. Remove 48-pin TSOP package type information on page 1, 2, 59 and 64. 2010/04/28 2. Remove 48-ball TFBGA package type information on page 1, 3, 61 and 64. 1. Update Table 15. DC Characteristics on page 44. (1) Icc3 from 30mA to 40mA. (max.) 2010/05/11 (2) Icc4, Icc5, Icc6 from 1.5/10uA to 2.0/20uA (typ./max.) 2. Update Chip Erase time from 140s to 60s (max.) on page 57. 2010/06/09 1. Add ERRATA SHEET on page 63 Remove VIO function. 2011/01/28 Revive VIO function. 2011/04/13 This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 64 ©2004 Eon Silicon Solution, Inc., Rev. M, Issue Date: 2011/04/13 www.eonssi.com