Product Bulletin HCT802 September 1996 Dual Enhancement Mode MOSFET Types HCT802, HCT802TX, HCT802TXV Features Absolute Maximum Ratings • 6 pad surface mount package • VDS = 90V • RDS(on) <5Ω • ID(on) N-Channel = 1.5A Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V Drain Current (Limited by Tj max) N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A P-Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C Power Dissipation TA = 25o C (Both devices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W Total TS = 25o C (Both devices equally driven). . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W Total(1) (Ts = Substrate that the package is soldered to) Notes P-Channel = 1.1A • Two devices selected for VDS, ID(on) and RDS(on) similarity • Full TX Processing Available • Gold plated contacts Description HCT802 offers an N-Channel and PChannel MOS transistor in a hermetic ceramic surface mount package. The devices used are similar to industry standards 2N6661 N-Channel device and VP1008 P-Channel device. These two enhancement mode MOSFETS are particularly well matched for VDS, IDS(on), RDS(on) and Gfs. (1) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measureable as an outgoing test. Order HCT802TX for processing per MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4. TX products receive a VGS HTRB at 16 V for 48 hrs. at 150o C and a VDS HTRB at 72 V for 160 hrs. at 150o C. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-34 (972) 323-2200 Fax (972) 323-2396 Types HCT802, HCT802TX, HCT802TXV Electrical Characteristics (TA = 25o C unless specified otherwise) Symbol Parameters Device B=Both Min BVDSS Drain-Source Breakdown B 90* VTH Gate Threshold Voltage N 0.75 P -2.0 Max Units Test Conditions V ID = 10 µA*, VGS = 0 2.5 V VGS = VDS, ID = 1 mA -4.5 V ID = -1 mA IGSS Gate-Body Leakage B ±100 nA VGS = ± 20 V, VDS = 0 IDSS Zero Gate Voltage Drain Current B 10* µA VDS = 90 V*, VGS = 0 V B 500* µA Tj = 150o C ID(on) On-State Drain Current N 1.5 A VDS = 25 V, VGS = 10 V P -1.1 A VDS = -15 V, VGS = -10 V Ω VGS = 10 V*, ID = 1 A* RDS(on) Drain-Source on Resistance B Gfs N 170 mmho VDS = 25 V, ID = 0.5 A P 200 mmho VDS = -10 V, ID = -0.5 A CISS COSS CRSS t(on) t(off) Forward Transconductance Input Capacitance 5 N 70 pf VDS = 25 V, VGS = 0 V, f = 1 MHz P 150 pf VDS = -25 V, VGS = 0 V, f = 1 MHz Common Source Output Capacitance N 40 pf VDS = 25 V, VGS = 0 V, f = 1 MHz P 60 pf VDS = -25 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance N 10 pf VDS = 25 V, VGS = 0 A, f = 1 MHz P 25 pf VDS = -25 V, VGS = 0 A, f = 1 MHz N 15 ns VDD = 25 V, ID = 1 A, RL = 50 Ω P 50 ns VDD = -25 V, ID = -0.5 A, RL = 50 Ω N 17 ns VDD = 25 V, ID = 1 A, RL = 50 Ω P 50 ns VDD = -25 V, ID = -0.5 A, RL = 50 Ω Turn-on-time Turn-off-time * Reverse polarity for P-Channel device Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 15-35