AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 750V IDM 45A RDS(ON),max 0.399Ω Qg,typ 13.2nC Eoss @ 400V 2.9µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11S65L & AOB11S65L & AOTF11S65L Top View TO-220 TO-263 D2PAK TO-220F D D G D G S AOT11S65 G D S S AOB11S65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT11S65/AOB11S65 Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID Repetitive avalanche energy C Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D AOTF11S65L V ±30 11* 11* 8* 8* 8 Units V A 45 IAR 2 A EAR 60 mJ EAS PD 120 198 1.6 dv/dt TJ, TSTG TL Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1: Mar 2012 AOTF11S65 650 11 IDM Avalanche Current C S G AOTF11S65 39 0.31 100 20 -55 to 150 mJ 31 W 0.25 W/ oC V/ns °C °C 300 AOT11S65/AOB11S65 AOTF11S65 AOTF11S65L 65 65 65 °C/W 0.5 0.63 -3.25 -4 °C/W °C/W www.aosmd.com Units Page 1 of 7 AOT11S65/AOB11S65/AOTF11S65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 650 - - ID=250µA, VGS=0V, TJ=150°C 700 750 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V - - 1 VDS=520V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 4 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=5.5A, TJ=25°C - 0.35 0.399 Ω VGS=10V, ID=5.5A, TJ=150°C - 0.98 1.11 Ω IS=5.5A,VGS=0V, TJ=25°C - 0.82 - V Maximum Body-Diode Continuous Current - - 11 A Maximum Body-Diode Pulsed CurrentC - - 45 A - 646 - pF - 42 - pF - 33 - pF - 117 - pF DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz Crss Effective output capacitance, time related I Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz - 1.1 - pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz - 18 - Ω - 13.2 - nC - 3.2 - nC Co(tr) SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=5.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 4.3 - nC tD(on) Turn-On DelayTime - 25 - ns tr Turn-On Rise Time - 20 - ns tD(off) Turn-Off DelayTime - 77 - ns tf trr Turn-Off Fall Time - 19 - ns IF=5.5A,dI/dt=100A/µs,VDS=400V VGS=10V, VDS=400V, ID=5.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current - 278 - ns Irm IF=5.5A,dI/dt=100A/µs,VDS=400V - 22 - Qrr Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V - 4.2 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Mar 2012 www.aosmd.com Page 2 of 7 AOT11S65/AOB11S65/AOTF11S65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 25 7V 10V 20 16 7V 10V 6V 6V 12 ID (A) ID (A) 15 5.5V 10 5.5V 8 5V 5V 4 5 VGS=4.5V VGS=4.5V 0 0 0 5 10 15 0 20 5 VDS (Volts) Figure 1: On-Region Characteristics@25°C 20 -55°C VDS=20V 0.9 RDS(ON) (Ω ) 10 125°C ID(A) 15 1.2 100 1 0.1 VGS=10V 0.6 0.3 25°C 0.0 0.01 2 4 6 8 0 10 5 10 15 20 25 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage VGS(Volts) Figure 3: Transfer Characteristics 1.2 3 2.5 VGS=10V ID=5.5A BVDSS (Normalized) Normalized On-Resistance 10 VDS (Volts) Figure 2: On-Region Characteristics@125°C 2 1.5 1 1.1 1 0.9 0.5 0 -100 -50 0 50 100 150 200 0.8 -100 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev1: Mar 2012 www.aosmd.com -50 0 50 100 150 200 TJ (oC) Figure 6: Break Down vs. Junction Temperature Page 3 of 7 AOT11S65/AOB11S65/AOTF11S65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 12 125°C VDS=480V ID=5.5A 1.0E-01 9 VGS (Volts) IS (A) 1.0E+00 25°C 1.0E-02 6 1.0E-03 3 1.0E-04 1.0E-05 0 0.0 0.2 0.4 0.6 0.8 1.0 0 4 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 16 20 6 5 Eoss(uJ) Ciss 1000 Capacitance (pF) 12 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 100 Coss 4 3 Eoss 10 2 Crss 1 1 0 0 0 100 200 300 400 500 0 600 100 100 300 400 500 600 100 RDS(ON) limited 10µs 100µs DC 1 1ms 10ms 0.1 RDS(ON) limited 10 ID (Amps) 10 200 VDS (Volts) Figure 10: Coss stored Energy VDS (Volts) Figure 9: Capacitance Characteristics ID (Amps) 8 10µs 100µs 1 1ms DC 10ms 0.1s 1s 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)11S65 (Note F) Rev1: Mar 2012 1 www.aosmd.com Figure 12: Maximum Forward Biased Safe Operating Area for AOTF11S65(Note F) Page 4 of 7 AOT11S65/AOB11S65/AOTF11S65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 100 100µs 1 1ms DC 0.1 TJ(Max)=150°C TC=25°C 120 EAS(mJ) ID (Amps) 10µs RDS(ON) limited 10 90 10ms 60 0.1s 1s 30 0 0.01 1 10 100 1000 VDS (Volts) Figure 13: Maximum Forward Biased Safe Operating Area for AOTF11S65L(Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Avalanche energy 12 Current rating ID(A) 10 8 6 4 2 0 0 25 75 100 125 TCASE (°C) Figure 15: Current De-rating (Note B) Rev1: Mar 2012 50 150 www.aosmd.com Page 5 of 7 AOT11S65/AOB11S65/AOTF11S65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.63°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)11S65 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.25°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF11S65 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF11S65L (Note F) Rev1: Mar 2012 www.aosmd.com Page 6 of 7 AOT11S65/AOB11S65/AOTF11S65 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev1: Mar 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 7 of 7