Central MJ4035 Complementary silicon power darlington transistor Datasheet

Central
MJ4032 PNP
MJ4035 NPN
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJ4032, MJ4035
types are Complementary Silicon Power Darlington
Transistors designed for general purpose and amplifier
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
100
UNITS
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5.0
V
IC
16
A
Collector Current
Base Current
IB
0.5
A
Power Dissipation
PD
150
W
TJ, Tstg
-65 to +200
°C
ΘJC
1.17
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICER
VCE=100V, RBE=1.0kΩ
MAX
1.0
UNITS
mA
ICER
VCE=100V, RBE=1.0kΩ, TC=150°C
5.0
mA
ICEO
VCE=50V
3.0
mA
IEBO
VEB=5.0V
5.0
mA
BVCEO
IC=100mA
VCE(SAT)
IC=10A, IB=40mA
2.5
V
VCE(SAT)
IC=16A, IB=80mA
4.0
V
VBE(ON)
VCE=3.0V, IC=10A
3.0
V
hFE
VCE=3.0V, IC=10A
Operating and Storage Junction Temperature
Thermal Resistance
100
V
1000
R0 (4-May 2009)
Central
MJ4032 PNP
MJ4035 NPN
TM
Semiconductor Corp.
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
C) COLLECTOR
MARKING: FULL PART NUMBER
R0 (4-May 2009)
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