PD- 93924
PROVISIONAL
IRFBA32N50K
SMPS MOSFET
Applications
Telecom and Data-Com off-Line SMPS
l UninterruptIble Power Supply
Benefits
l Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristics
l Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
l
HEXFET® Power MOSFET
VDSS
500V
RDS(on)
ID
0.14Ω
32A
Super-220™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Recommended clip force
32
20
128
360
2.9
± 30
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
300
°C
20
N
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
32
––– –––
showing the
A
G
integral reverse
––– ––– 128
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 32A, VGS = 0V
––– 650 –––
ns
TJ = 125°C, IF = 32A
––– 9.0 –––
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l
l
l
Hard Switching Full and Half Bridge Circuits
Hard Switching Single Transistor Circuits
Power Factor Correction Circuits
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1
6/2/00
IRFBA32N50K
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
∆V(BR)DSS/∆TJ
Min. Typ. Max. Units
Conditions
500 ––– –––
V
VGS = 0V, ID = 250µA
––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.14
Ω
VGS = 10V, ID = 19A
3.5
––– 5.5
V
VDS = V GS, ID = 250µA
––– ––– 50
µA
VDS = 500V, VGS = 0V
––– ––– 250
µA
VDS = 400V, VGS = 0V, TJ = 125°C
––– ––– 100
VGS = 30V
nA
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
20
60
45
40
5300
540
33
Max. Units
Conditions
–––
S
VDS = 50V, ID = 19A
195
ID = 32A
75
nC
VDS = 400V
90
VGS = 10V,
–––
VDD = 250V
–––
ID = 32A
ns
–––
RG = 4.3Ω
–––
VGS = 10V,
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
760
32
36
mJ
A
mJ
Typ.
Max.
Units
–––
0.50
–––
0.35
–––
58
°C/W
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 4.3mH, RG = 25Ω,
IAS = 32A,
ISD ≤ 32A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
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PROVISIONAL
IRFBA32N50K
Super-220™ Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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