NCE Power NCEP85T25 Nce n-channel super trench power mosfet Datasheet

Pb Free Product
NCEP85T25
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NCE N-Channel Super Trench Power MOSFET
Description
The NCEP85T25 uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =85V,ID =250A
RDS(ON) <2.8mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Marking and pin assignment
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP85T25
NCEP85T25
TO-220-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
85
V
Gate-Source Voltage
VGS
±20
V
ID
250
A
ID (100℃)
180
A
Pulsed Drain Current
IDM
800
A
Maximum Power Dissipation
PD
300
W
2
W/℃
EAS
1700
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.5
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
85
Zero Gate Voltage Drain Current
IDSS
VDS=85V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2.5
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=100A
-
gFS
VDS=10V,ID=100A
Typ
Max
Unit
-
V
-
1
μA
-
±100
nA
4.5
V
-
2.8
mΩ
-
90
-
S
-
11500
-
PF
-
2990
-
PF
-
105
-
PF
-
28
-
nS
Off Characteristics
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=40V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=40V,ID=100A
-
73
-
nS
td(off)
VGS=10V,RG=1.6Ω
-
86
-
nS
-
33
-
nS
-
165
nC
-
56
nC
-
35
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=40V,ID=100A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IF= IS
IS
trr
TJ = 25°C, IF = IS
Qrr
di/dt = 100A/μs
(Note3)
-
1.2
V
250
A
-
-
-
115
nS
-
320
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=42.5V,VG=10V,L=0.5mH,Rg=25Ω
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NCEP85T25
Test Circuit
1) EAS test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
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ID- Drain Current (A)
Typical Electrical and Thermal Characteristics
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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C Capacitance (pF)
Power Dissipation (W)
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TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
ID- Drain Current (A)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.400
4.600
0.173
0.181
A1
2.250
2.550
0.089
0.100
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
9.910
10.250
0.390
0.404
E
8.9500
9.750
0.352
0.384
E1
12.650
12.950
0.498
0.510
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.650
2.950
0.104
0.116
H
7.900
8.100
0.311
0.319
h
0.000
0.300
0.000
0.012
L
12.900
13.400
0.508
0.528
L1
2.850
3.250
0.112
0.128
V
Φ
7.500 REF.
3.400
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0.295 REF.
3.800
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0.150
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NCEP85T25
Attention:
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