DG441/442 Vishay Siliconix Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG441/442 monolithic quad analog switches are designed to provide high speed, low error switching of analog and audio signals. The DG441 has a normally closed function. The DG442 has a normally open function. Combining low on-resistance (50 Ω, typ.) with high speed (tON 150 ns, typ.), the DG441/442 are ideally suited for upgrading DG201A/202 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. • • • • • • • • To achieve high voltage ratings and superior switching performance, the DG441/442 are built on Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. Low On-Resistance: 50 Ω Low Leakage: 80 pA Low Power Consumption: 0.2 mW Fast Switching Action-tON: 150 ns Low Charge Injection-Q: - 1 pC DG201A/DG202 Upgrades TTL/CMOS-Compatible Logic Single Supply Capability Pb-free Available RoHS* COMPLIANT BENEFITS • • • • • • • Less Signal Errors and Distortion Reduced Power Supply Requirements Faster Throughput Improved Reliability Reduced Pedestal Errors Simplifies Retrofit Simple Interfacing APPLICATIONS • • • • • • • • Audio Switching Battery Powered Systems Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Medical Instruments FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION IN1 1 16 IN2 D1 IN1 IN2 NC D2 Key D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ Dual-In-Line and SOIC 3 5 12 NC 1 20 S1 4 V- 5 NC 6 DG441 GND 7 Top View S4 8 DG441 GND 2 19 18 S2 17 V+ 16 NC 15 NC 14 S3 LCC Top View S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 9 D4 10 IN4 11 NC 12 IN3 13 D3 TRUTH TABLE Logic 0 1 Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V DG441 ON OFF DG442 OFF ON * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70053 S-71241–Rev. I, 25-Jun-07 www.vishay.com 1 DG441/442 Vishay Siliconix ORDERING INFORMATION Temp Range Package Part Number DG441DJ DG441DJ-E3 16-Pin Plastic DIP DG442DJ DG442DJ-E3 DG441DY DG441DY-E3 DG441DY-T1 DG441DY-T1-E3 - 40 to 85 °C 16-Pin Narrow SOIC DG442DY DG442DY-E3 DG442DY-T1 DG442DY-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter V+ to V- Limit 44 GND to V- 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 30 Digital Inputsa, VS, VD Continuous Current (Any Terminal) Current, S or D (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature Power Dissipation (Package)b Unit V mA 100 (AK Suffix) - 65 to 150 (DJ, DY Suffix) - 65 to 125 16-Pin Plastic DIPc 450 16-Pin CerDIPd 900 16-Pin Narrow SOICd 900 LCC-20d 1200 °C mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/°C above 75 °C. d. Derate 12 mW/°C above 75 °C. SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ 5 V Reg INX V- Level Shift/ Drive V+ GND V- Figure 1. www.vishay.com 2 Document Number: 70053 S-71241–Rev. I, 25-Jun-07 DG441/442 Vishay Siliconix SPECIFICATIONSa FOR DUAL SUPPLIES Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V Parameter Symbol VIN = 2.4 V, 0.8 Vf Tempb IS = - 10 mA, VD = ± 8.5 V V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = ± 10 V V+ = 15 V, V– = - 15 V Room Full Typc A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind - 15 15 - 15 Maxd Unit 15 V Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) On-Resistance Match Between Channelse ΔrDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) Full V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V 50 Room Full 85 100 85 100 4 5 4 5 Room Full ± 0.01 - 0.5 - 20 0.5 20 - 0.5 -5 0.5 5 Room Full ± 0.01 - 0.5 - 20 0.5 20 - 0.5 -5 0.5 5 Room Full ± 0.08 - 0.5 - 40 0.5 40 - 0.5 - 10 0.5 10 Full - 0.01 - 500 500 - 500 500 Full 0.01 - 500 500 - 500 500 Ω nA Digital Control Input Current VIN Low IIL Input Current VIN High IIH Dynamic Characteristics Turn-On Time DG441 Turn-Off Time DG442 Charge Injectione Off Isolatione Crosstalke (Channel-to-Channel) RL = 1 kΩ, CL = 35 pF Room 150 250 250 tOFF VS = ± 10 V See Figure 2 Room 90 120 120 Room 110 210 210 Q CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 Ω Room -1 OIRR XTALK CS(off) Drain Off Capacitancee CD(off) Channel On Capacitance Power Supplies Positive Supply Current Negative Supply Current Ground Current Document Number: 70053 S-71241–Rev. I, 25-Jun-07 nA tON Source Off Capacitancee e VIN under test = 0.8 V, All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V CD(on) RL = 50 Ω, CL = 5 pF f = 1 MHz f = 1 MHz IGND 60 100 Room 4 Room 4 VANALOG = 0 V Room 16 V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Full Room Full Full 15 - 0.0001 I+ I- Room Room - 15 ns pC dB pF 100 -1 -5 - 100 100 -1 -5 - 100 µA www.vishay.com 3 DG441/442 Vishay Siliconix SPECIFICATIONSa FOR SINGLE SUPPLY Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V Parameter A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Mind Maxd Mind 12 0 VIN = 2.4 V, 0.8 Vf Tempb rDS(on) IS = - 10 mA, VD = 3 V, 8 V V+ = 10.8 V Room Full 100 160 200 tON RL = 1 kΩ, CL = 35 pF Room 300 450 450 Room 60 200 200 Room 2 Full Room Full Full 15 - 0.0001 Symbol Typc Maxd Unit 12 V 160 200 Ω Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time VANALOG tOFF Charge Injection Q Power Supplies Positive Supply Current I+ Negative Supply Current Ground Current Full VS = 8 V See Figure 2 CL = 1nF, Vgen = 6 V, Rgen = 0 Ω I- V+ = 13.2 V, V- = 0 V VIN = 0 or 5 V IGND 0 - 15 ns pC 100 -1 - 100 - 100 100 -1 - 100 - 100 µA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70053 S-71241–Rev. I, 25-Jun-07 DG441/442 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 ±5V 80 60 ±8V ± 10 V ± 12 V 40 ± 15 V ± 20 V 20 0 r DS(on) – Drain-Source On-Resistance (Ω) r DS(on) – Drain-Source On-Resistance (Ω) 100 V+ = 15 V V- = - 15 V 70 60 125 °C 50 85 °C 40 25 °C 30 20 - 55 °C 0 °C - 40 °C 10 0 - 20 - 15 - 10 -5 0 5 10 15 20 - 15 - 10 - 5 VD – Drain Voltage (V) 0 5 10 15 VD – Drain Voltage (V) rDS(on) vs. VD and Power Supply Voltage rDS(on) vs. VD and Temperature 300 140 r DS(on) – Drain-Source On-Resistance (Ω) r DS(on) – Drain-Source On-Resistance (Ω) V- = 0 V 250 V+ = 5 V 200 150 8V 100 10 V 12 V 15 V 50 20 V 0 120 125 °C 85 °C 100 80 25 °C 60 - 55 °C 40 0 °C - 40 °C 20 V+ = 12 V V- = 0 V 0 4 0 8 12 16 20 0 2 4 VD − Drain Voltage (V) 6 8 10 12 VD – Drain Voltage (V) rDS(on) vs. VD and Unipolar Power Supply Voltage rDS(on) vs. VD and Temperature (Single 12-V Supply) 50 140 CL = 1 nF 40 120 Crosstalk 30 100 V+ = 15 V V- = - 15 V Q (pC) (–dB) 20 80 60 10 0 Off Isolation 40 V+ = 12 V V- = 0 V - 10 V+ = 15 V V- = - 15 V Ref. 10 dBm 20 - 20 0 - 30 100 1k 10 k 100 k 1M f – Frequency (Hz) Crosstalk and Off Isolation vs. Frequency Document Number: 70053 S-71241–Rev. I, 25-Jun-07 10 M - 10 -5 0 5 10 VS – Source Voltage (V) Charge Injection vs. Source Voltage www.vishay.com 5 DG441/442 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.4 20 IS(off) , ID(off) 0 1.6 V IN (V) I S, I D (pA) - 20 0.8 - 40 ID(on) - 60 V+ = 15 V V- = - 15 V For I(off), V D = - VS - 80 0 ±5 0 ± 10 ± 15 - 100 - 15 ± 20 - 10 0 -5 5 VD or V S – Drain or Source Voltage (V) Switching Threshold vs. Supply Voltage Source/Drain Leakage Currents 10 15 10 V+, V– Positive and Negative Supplies (V) 50 V+ IS(off) , ID(off) 44 40 0 S 5 V – CMOS Compatible D - 10 V+ (V) I S, I D (pA) IN IS(on) + ID(on) - 20 30 V20 TTL Compatible VIN = 0.8 V, 2.4 V V+ = 12 V V- = 0 V For ID, V S = 0 For IS, V D = 0 - 30 10 CMOS Compatible 3 0 - 40 0 2 4 6 8 10 12 0 - 10 VD or V S – Drain or Source Voltage (V) - 20 - 30 - 40 - 50 V- – Negative Supply (V) Source/Drain Leakage Currents (Single 12 V Supply) Operating Voltage 160 500 V- = 0 V 140 tON 400 120 100 t (ns) t (ns) tON 300 80 200 tOFF 60 100 40 tOFF 20 ± 10 www.vishay.com 6 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22 0 8 10 12 14 16 18 20 22 Supply Voltage (V) VS − Source Voltage (V) Switching Time vs. Power Supply Voltage Switching Time vs. Power Supply Voltage Document Number: 70053 S-71241–Rev. I, 25-Jun-07 DG441/442 Vishay Siliconix TEST CIRCUITS + 15 V 3V Logic Input 50 % V+ 0V D S 10 V IN VO RL 1 kΩ 3V GND tr < 20 ns tf < 20 ns 50 % CL 35 pF tOFF Switch Input VS Switch Output 0V VO 80 % 80 % V- - 15 V CL (includes fixture and stray capacitance) tON Note: Logic input waveform is inverted for DG442. Figure 2. Switching Time + 15 V ΔV O VO V+ Rg D S INX VO IN CL 1 nF 3V V- GND OFF ON OFF (DG441) INX OFF ON Q = ΔVO x CL OFF (DG442) - 15 V Figure 3. Charge Injection C = 1 mF tantalum in parallel with 0.01 mF ceramic + 15 V C + 15 V C V+ S1 VS Rg = 50 Ω D1 V+ 50 Ω IN1 0 V, 2.4 V S2 NC RL IN2 GND V- RL IN 0 V, 2.4 V 0 V, 2.4 V VO D Rg = 50 Ω VO D2 S VS GND V- C C - 15 V - 15 V XTA LK Isolation = 20 log C = RF bypass Off Isolation = 20 log VS VO VS VO Figure 5. Off Isolation Figure 4. Crosstalk + 15 V C S V+ Meter 0 V, 2.4 V IN HP4192A Impedance Analyzer or Equivalent D GND V- C - 15 V Figure 6. Source/Drain Capacitances Document Number: 70053 S-71241–Rev. I, 25-Jun-07 www.vishay.com 7 DG441/442 Vishay Siliconix APPLICATIONS + 24 V + 15 V RL V+ DG442 I=3A 150 Ω + 15 V VN0300 L, M IN + 15 V VIN 1/4 DG442 10 kΩ + 15 V GND S + D VOUT - CH V- IN 0 = Load Off 1 = Load On - H = Sample L = Hold Figure 8. Open Loop Sample-and-Hold Figure 7. Power MOSFET Driver VIN - 15 V + + - VOUT + 15 V Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ GAIN1 AV = 1 R1 90 kΩ GAIN2 AV = 10 R2 5 kΩ With SW4 Closed VOUT VIN GAIN3 AV = 20 R3 4 kΩ GAIN4 AV = 100 R4 1 kΩ = R1 + R2 + R3 + R4 = 100 R4 DG441 or DG442 V- GND - 15 V Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70053. www.vishay.com 8 Document Number: 70053 S-71241–Rev. I, 25-Jun-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1