Diodes DMJT9435-13 Low vce(sat) pnp surface mount transistor Datasheet

DMJT9435
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Please click here to visit our online spice models database.
Features
Mechanical Data
•
•
•
•
•
•
•
Ideally Suited for Automated Assembly Processes
Low Collector-Emitter Saturation Voltage
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
•
•
•
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
COLLECTOR
2,4
3 E
C 4
1
BASE
1 B
3
EMITTER
Top View
Maximum Ratings
2 C
Pin Out Configuration
Device Schematic
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Continuous Base Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Value
-45
-30
-6
-5
-3
-1
Unit
V
V
V
A
A
A
Value
1.2
104
2
62.5
3
42
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Power Dissipation @ TC = 25°C
Thermal Resistance, Junction to Case @ TC = 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Symbol
PD
RθJA
PD
RθJA
PD
RθJA
TJ, TSTG
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
DMJT9435
Document number: DS31622 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
DMJT9435
Electrical Characteristics
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)CEO
V(BR)EBO
-30
-6
⎯
⎯
⎯
⎯
⎯
⎯
-20
V
V
μA
Collector-Base Cutoff Current
ICER
⎯
⎯
-200
μA
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
IEBO
⎯
⎯
-10
μA
DC Current Gain
hFE
⎯
⎯
⎯
-100
⎯
-250
83
⎯
⎯
⎯
⎯
⎯
-210
-275
-550
183
-1.25
-1.1
mΩ
V
V
Collector-Emitter Saturation Voltage
VCE(SAT)
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
RCE(SAT)
VBE(SAT)
VBE(ON)
125
110
90
⎯
⎯
⎯
⎯
⎯
⎯
fT
⎯
160
⎯
MHz
Cobo
Cibo
⎯
⎯
45
140
150
⎯
pF
pF
ton
td
tr
toff
ts
tf
⎯
⎯
⎯
⎯
⎯
⎯
200
90
110
155
100
55
⎯
⎯
⎯
⎯
⎯
⎯
ns
ns
ns
ns
ns
ns
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
⎯
mV
Test Conditions
IC = -10mA
IE = -50μA
VCB = -25V, RBE = 200Ω
VCB = -25V, RBE = 200Ω,
TA = 125°C
VEB = -5V, IC = 0
VCE = -1V, IC = -0.8A
VCE = -1V, IC = -1.2A
VCE = -1V, IC = -3A
IC = -0.8A, IB = -20mA
IC = -1.2A, IB = -20mA
IC = -3A, IB = -300mA
IC = -3.0A, IB = -300mA
IC = -3A, IB = -300mA
VCE = -4V, IC = -1.2A
VCE = -10V, IC = -100mA,
f = 100MHz
VCB = -10V, f = 1MHz
VEB = -8V, f = 1MHz
VCC = -15V, IC = -1.2A,
IB1 = -20mA
VCC = -15V, IC = -1.2A,
IB1 = IB2 = -20mA
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1.0
-IC, COLLECTOR CURRENT (A)
2.0
PD, POWER DISSIPATION (W)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
1.6
1.2
Note 4
0.8
Note 3
0.4
0.8
IB = -5mA
IB = -4mA
0.6
IB = -3mA
0.4
IB = -2mA
0.2
IB = -1mA
0
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
DMJT9435
Document number: DS31622 Rev. 2 - 2
2 of 4
www.diodes.com
0
4
8
12
16
20
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
December 2008
© Diodes Incorporated
DMJT9435
10
1,000
VCE = -1V
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
hFE, DC CURRENT GAIN
TA = 85°C
TA = 25°C
100
TA = -55°C
1
TA = 150°C
0.1
T A = 25°C
T A = -55°C
0.01
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = -4V
1.0
0.8
TA = -55°C
0.6
T A = 25°C
0.4
T A = 85°C
TA = 150°C
0.2
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
TA = 85°C
0.001
10
1.2
IC/IB = 10
1.0
0.8
T A = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 150°C
0.2
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
1,000
fT, GAIN-BANDWIDTH PRODUCT (MHz)
f = 1MHz
CAPACITANCE (pF)
NEW PRODUCT
T A = 150°C
100
Cibo
10
Cobo
1
100
10
VCE = -10V
f = 100MHz
1
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DMJT9435
Document number: DS31622 Rev. 2 - 2
3 of 4
www.diodes.com
0
10
20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
December 2008
© Diodes Incorporated
DMJT9435
Ordering Information
(Note 6)
Part Number
DMJT9435-13
NEW PRODUCT
Notes:
Case
SOT-223
Packaging
2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW
ZPS33
ZPS33 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
A
A1
Suggested Pad Layout
X1
Y1
C1
Y2
Dimensions
X1
X2
Y1
Y2
C1
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
X2
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMJT9435
Document number: DS31622 Rev. 2 - 2
4 of 4
www.diodes.com
December 2008
© Diodes Incorporated
Similar pages