AP4511GED-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Lower Gate Charge
D1
40V
RDS(ON)
D1
28mΩ
ID
▼ Fast Switching Performance
G2
▼ RoHS Compliant & Halogen-Free
PDIP-8
G1
6A
P-CH BVDSS
S2
-40V
RDS(ON)
S1
42mΩ
ID
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-5A
D1
G1
D2
G2
S1
.
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
S2
Units
P-channel
40
-40
V
+16
+16
V
Continuous Drain Current
3
6.0
-5.0
A
Continuous Drain Current
3
5.0
-4.0
A
30
-30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
200906014
AP4511GED-HF
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=6A
-
-
28
mΩ
VGS=4.5V, ID=4A
-
-
36
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=70oC) VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+30
uA
ID=6A
-
8.2
13
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.6
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
7
-
ns
tr
Rise Time
ID=6A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
. D=3.3Ω
R
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
590
940
pF
Coss
Output Capacitance
VDS=20V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
IS=1.25A, V GS=0V
-
-
1.6
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
2
AP4511GED-HF
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-5A
-
-
42
mΩ
VGS=-4.5V, ID=-3A
-
-
60
mΩ
-0.8
-
-2.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+30
uA
o
IGSS
2
Qg
Total Gate Charge
ID=-5A
-
9
24
nC
Qgs
Gate-Source Charge
VDS=-20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
2
td(on)
Turn-on Delay Time
VDS=-20V
-
8.5
-
ns
tr
Rise Time
ID=-5A
-
15
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
-
27
-
ns
tf
Fall Time
RD=4Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
.
-
770
1230
pF
Coss
Output Capacitance
VDS=-20V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Min.
Typ.
IS=-1.25A, VGS=0V
-
-
-1.6
V
IS=-5A, VGS=0V
-
20
-
ns
dI/dt=-100A/µs
-
16
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 90℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4511GED-HF
N-Channel
30
30
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
V G =3.0V
20
10
V G =3.0V
20
10
0
0
0
1
2
0
3
1
V DS , Drain-to-Source Voltage (V)
3
4
Fig 2. Typical Output Characteristics
2.0
105
ID=6A
V G =10V
T A =25 o C
75
.
Normalized RDS(ON)
ID=4A
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.6
1.2
45
0.8
15
2
4
6
8
25
10
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
Normalized VGS(th) (V)
1.6
6
IS(A)
10V
7.0V
5.0V
4.5V
o
T A = 150 C
ID , Drain Current (A)
o
T A = 25 C
o
T j =25 o C
T j =150 C
4
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4511GED-HF
N-Channel
f=1.0MHz
1000
C iss
I D =6A
V DS =20V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C oss
100
C rss
4
10
0
0
5
10
15
1
20
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
1
10ms
100ms
1s
T A =25 o C
Single Pulse
0.1
.
Normalized Thermal Response (Rthja)
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=90 oC/W
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
T j =150 o C
QG
20
4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4511GED-HF
P-Channel
30
30
-ID , Drain Current (A)
T A = 25 o C
-ID , Drain Current (A)
o
T A = 150 C
-10V
-7.0V
-5.0V
-4.5V
V G = - 3.0V
20
10
0
20
V G = - 3.0V
10
0
0
1
2
3
4
5
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
1.6
I D =-5A
V G =-10V
I D = -3 A
T A =25 o C
70
.
Normalized RDS(ON)
1.4
90
RDS(ON) (mΩ)
-10V
-7.0V
-5.0V
-4.5V
1.2
1.0
50
0.8
0.6
30
2
4
6
8
25
10
75
100
125
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
T j =25 o C
o
T j =150 C
4
Normalized -VGS(th) (V)
6
-IS(A)
50
o
-V GS ,Gate-to-Source Voltage (V)
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4511GED-HF
P-Channel
f=1.0MHz
10000
I D = -5 A
V DS = - 2 0 V
8
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
C oss
C rss
100
4
10
0
0
4
8
12
16
1
20
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
.
Normalized Thermal Response (Rthja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=90 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
QG
T j =150 o C
20
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7