DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D122 BYD31 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 1996 Sep 18 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed • High maximum operating temperature and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability a k • Available in ammo-pack. MAM196 Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER CONDITIONS MIN. MAX. UNIT BYD31D − 200 V BYD31G − 400 V BYD31J − 600 V BYD31K − 800 V BYD31M − 1000 V BYD31D − 200 V BYD31G − 400 V BYD31J − 600 V BYD31K − 800 V BYD31M − 1000 V Ttp = 55 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 − 440 mA Tamb = 60 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 320 mA Ttp = 55 °C; see Fig.4 − 4 A Tamb = 60 °C; see Fig.5 − 3 A t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 5 A repetitive peak reverse voltage continuous reverse voltage average forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current 1996 Sep 18 2 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL PRSM BYD31 series PARAMETER non-repetitive peak reverse power dissipation CONDITIONS MIN. MAX. UNIT t = 20 µs half sine wave; Tj = Tj max prior to surge BYD31D to J − 100 W BYD31K and M − 50 W Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. IF = 0.5 A; Tj = Tj max; see Fig.8 − − 1.15 V IF = 0.5 A; see Fig.8 − − 1.35 V BYD31D 300 − − V BYD31G 500 − − V see Fig.7 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R IR trr PARAMETER forward voltage reverse avalanche breakdown voltage IR = 0.1 mA BYD31J 700 − − V 900 − − V BYD31M 1100 − − V VR = VRRMmax; see Fig.9 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.9 − − 75 µA − − 250 ns − − 300 ns − 9 − pF − − 6 A/µs − − 5 A/µs reverse current reverse recovery time BYD31K and M dI R -------dt when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25A see Fig.12 diode capacitance f = 1 MHz; VR = 0 V; see Fig.10 maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 BYD31D to J BYD31K and M 1996 Sep 18 UNIT BYD31K BYD31D to J Cd CONDITIONS 3 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 250 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 18 4 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series GRAPHICAL DATA MGC518 MGC517 0.6 0.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) lead length 10 mm 0.4 0.4 0.2 0.2 0 0 0 100 Ttp ( oC) 0 200 100 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Tamb ( o C) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MCD580 5.0 handbook, full pagewidth I FRM (A) δ= 0.05 0.1 2.5 0.2 0.5 1 0 10 −2 10 −1 10 0 10 1 10 2 10 3 tp (ms) 10 4 Ttp = 55 °C; Rth j-tp = 180 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 5 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series MCD586 4 handbook, full pagewidth I FRM (A) 3 δ= 0.05 2 0.1 0.2 1 0.5 1 0 10 −2 10 −1 10 0 10 1 10 2 10 3 tp (ms) 10 4 Tamb = 60 °C; Rth j-a = 250 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD584 MCD583 1.0 handbook, halfpage 200 handbook, halfpage a=3 2.5 P (W) Tj 2 ( o C) a = 1.57 0.5 100 1.42 D 0 G J K M 0 0 0.25 0.50 0 500 I F(AV) (A) VR (V) 1000 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Sep 18 Dotted line = VRRM; δ = 0.5. Fig.7 6 Maximum permissible junction temperature as a function of reverse voltage. Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series MCD585 3 MCD582 3 10 handbook, halfpage handbook, halfpage IR (µA) IF (A) 2 10 2 1 10 0 0 1 2 VF (V) 1 3 0 100 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Fig.9 Forward current as a function of forward voltage; maximum values. 200 Tj ( oC) Reverse current as a function of junction temperature; maximum values. MGC516 handbook,10 halfpage 50 handbook, halfpage Cd 25 (pF) 5 7 50 2 2 3 1 1 10 10 2 VR (V) 10 3 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 18 Fig.11 Device mounted on a printed-circuit board. 7 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers handbook, full pagewidth BYD31 series IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) MAM057 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. IF halfpage andbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1996 Sep 18 8 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series PACKAGE OUTLINE 3.5 max handbook, full pagewidth 0.55 max 1.7 max 29 min 3.0 max MBC053 29 min Dimensions in mm. The marking band indicates the cathode. Fig.14 SOD91. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 18 9 Not recommended for new designs