ON MMSZ4684ET3G Zener voltage regulators 500 mw sod−123 surface mount Datasheet

MMSZ4678ET1 Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
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Features
•
•
•
•
•
•
•
Pb−Free Packages are Available
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 s)
1
Cathode
2
Anode
SOD−123
CASE 425
STYLE 1
2
1
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
ÂÂ
ÂÂ
ÂÂ
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx M
xxx = Specific Device Code
M = Date Code
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 s (Note 1)
@ TL ≤ 25°C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75°C
Derated above 75°C
PD
ORDERING INFORMATION
Package
Shipping†
MMSZ4xxxET1
SOD−123
3000/Tape & Reel
Device*
500
6.7
mW
mW/°C
Thermal Resistance, (Note 3)
Junction−to−Ambient
RJA
340
°C/W
MMSZ4xxxET1G
SOD−123
(Pb−Free)
3000/Tape & Reel
Thermal Resistance, (Note 3)
Junction−to−Lead
RJL
150
°C/W
MMSZ4xxxET3
SOD−123
10,000/Tape & Reel
MMSZ4xxxET3G
SOD−123
(Pb−Free)
10,000/Tape & Reel
Junction and Storage Temperature Range
TJ, Tstg
°C
−55 to
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
*The “T1” suffix refers to an 8 mm, 7 inch reel.
The “T3” suffix refers to an 8 mm, 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 3
1
Publication Order Number:
MMSZ4678ET1/D
MMSZ4678ET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
I
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Note 1)
VZ (V)
Leakage Current
@ IZT
IR @ VR
Device
Marking
Min
Nom
Max
A
A
V
MMSZ4684ET1
CG3
3.13
3.3
3.47
50
7.5
1.5
MMSZ4688ET1, G
CG7
4.47
4.7
4.94
50
10
3
MMSZ4689ET1
CG8
4.85
5.1
5.36
50
10
3
MMSZ4690ET1
CG9
5.32
5.6
5.88
50
10
4
MMSZ4691ET1
CH1
5.89
6.2
6.51
50
10
5
MMSZ4692ET1
CH2
6.46
6.8
7.14
50
10
5.1
MMSZ4693ET1
CH3
7.13
7.5
7.88
50
10
5.7
MMSZ4697ET1
CH7
9.50
10
10.50
50
1
7.6
MMSZ4699ET1
CH9
11.40
12
12.60
50
0.05
9.1
MMSZ4701ET1
CJ2
13.3
14
14.7
50
0.05
10.6
MMSZ4702ET1
CJ3
14.25
15
15.75
50
0.05
11.4
MMSZ4703ET1
CJ4
15.20
16
16.80
50
0.05
12.1
MMSZ4705ET1
CJ6
17.10
18
18.90
50
0.05
13.6
MMSZ4709ET1
CK1
22.80
24
25.20
50
0.01
18.2
MMSZ4711ET1
CK3
25.65
27
28.35
50
0.01
20.4
MMSZ4717ET1
CK9
40.85
43
45.15
50
0.01
32.6
Device
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C.
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2
MMSZ4678ET1 Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
2
1
0
−1
−2
−3
2
3
4
5
6
7
8
9
10
11
10
10
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
1.0
PD versus TL
0.8
0.6
100
PD versus TA
0.4
0.2
0
25
50
75
100
T, TEMPERATURE (°C)
RECTANGULAR
WAVEFORM, TA = 25°C
125
10
1
150
0.1
Figure 3. Steady State Power Derating
1
1000
1000
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
IZ = 1 mA
100
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
100
5 mA
20 mA
10
10
150°C
1
10
100
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z ZT, DYNAMIC IMPEDANCE (Ω )
100
VZ, NOMINAL ZENER VOLTAGE (V)
Ppk , PEAK SURGE POWER (WATTS)
PD, POWER DISSIPATION (WATTS)
VZ @ IZT
1
12
1.2
0
TYPICAL TC VALUES
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 5. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0°C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
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3
1.1
1.2
MMSZ4678ET1 Series
TYPICAL CHARACTERISTICS
1000
TA = 25°C
0 V BIAS
1 V BIAS
C, CAPACITANCE (pF)
I R , LEAKAGE CURRENT ( A)
1000
100
BIAS AT
50% OF VZ NOM
1
10
1
+150°C
0.1
0.01
10
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
0.001
+ 25°C
0.0001
−55°C
0.00001
0
10
Figure 7. Typical Capacitance
100
I Z, ZENER CURRENT (mA)
TA = 25°C
10
1
0.1
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
10
TA = 25°C
10
1
0.1
0.01
12
100
30
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 s
tr
90
10
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
80
70
60
HALF VALUE IRSM/2 @ 20 s
50
40
30
tP
20
10
0
0
90
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
% OF PEAK PULSE CURRENT
I Z, ZENER CURRENT (mA)
80
Figure 8. Typical Leakage Current
100
0.01
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
20
40
60
t, TIME (s)
Figure 11. 8 × 20 s Pulse Waveform
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4
80
90
MMSZ4678ET1 Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE C
A
ÂÂÂ
ÂÂÂ
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
H
1
K
DIM
A
B
C
D
E
H
J
K
B
E
2
D
INCHES
MIN
MAX
0.055
0.071
0.100
0.112
0.037
0.053
0.020
0.028
0.01
−−−
0.000
0.004
−−−
0.006
0.140
0.152
STYLE 1:
PIN 1. CATHODE
2. ANODE
J
SOLDERING FOOTPRINT*
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉÉ
ÉÉÉ
ÉÉÉ
SCALE 10:1
1.22
0.048
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
1.40
1.80
2.55
2.85
0.95
1.35
0.50
0.70
0.25
−−−
0.00
0.10
−−−
0.15
3.55
3.85
MMSZ4678ET1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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For additional information, please contact your
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MMSZ4678ET1/D
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