BPV23F(L) Vishay Semiconductors Silicon PIN Photodiode Description BPV23F(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters (λ p = 950 nm). Lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without compromising the viewing angle. In comparison with flat packages the lens package achieves a sensitivity improvement of 80 %. Features 94 8633 Applications mm2) • • • • • • • • Large radiant sensitive area (A = 5.7 Wide viewing angle ϕ = ± 60 ° Improved sensitivity Fast response times Low junction capacitance Plastic package with IR filter Filter designed for 950 nm transmission Option "L": long lead package optional available with suffix "L"; e.g.: BPV23FL • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...- or TSI...-Series). Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Power Dissipation Tamb ≤ 25 °C Junction Temperature Symbol Value VR 60 Unit V PV 215 mW Tj 100 °C Operating Temperature Range Tamb - 55 to + 100 °C Storage Temperature Range Tstg - 55 to + 100 °C Tsd 260 °C RthJA 350 K/W Soldering Temperature Thermal Resistance Junction/ Ambient Document Number 81510 Rev. 1.4, 08-Mar-05 t≤5s www.vishay.com 1 BPV23F(L) Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward Voltage IF = 50 mA Breakdown Voltage IR = 100 µA, E = 0 Symbol Min VF V(BR) Typ. Max Unit 1 1.3 V 60 V Reverse Dark Current VR = 10 V, E = 0 Iro 2 Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 48 pF Serial Resistance VR = 12 V, f = 1 MHz RS 900 Ω 30 nA Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Open Circuit Voltage Ee = 1 mW/cm2, λ = 950 nm Vo 390 mV Temp. Coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm , λ = 950 nm Ik 60 µA Reverse Light Current Ee = 1 mW/cm , λ = 950 nm, VR = 5 V Ira 63 µA Temp. Coefficient of Ira Ee = 1 mW/cm2, λ = 950 nm, VR = 10 V TKIra 0.2 %/K Absolute Spectral Sensitivity VR = 5 V, λ = 870 nm s(λ) 0.35 A/W VR = 5 V, λ = 950 nm s(λ) 0.6 A/W Angle of Half Sensitivity ϕ ± 60 deg Wavelength of Peak Sensitivity λp 950 nm λ0.5 870 to 1050 nm 2 2 Range of Spectral Bandwidth 45 Quantum Efficiency λ = 950 nm η 90 % Noise Equivalent Power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz Detectivity VR = 10 V, λ = 950 nm D* 5 x 1012 cm√Hz/W ns Rise Time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 70 Fall Time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 70 ns Cut-Off Frequency VR = 12 V, RL = 1 kΩ, λ = 870 nm fc 4 MHz VR = 12 V, RL = 1 kΩ, λ = 950 nm fc 1 MHz www.vishay.com 2 Document Number 81510 Rev. 1.4, 08-Mar-05 BPV23F(L) Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 Ira – Reverse Light Current (µA) I ro - Reverse Dark Current ( nA ) 1000 100 10 V R = 10 V 20 0.2 mW/cm 2 10 0.1 mW/cm 2 0.05 mW/cm 2 0.02 mW/cm2 40 60 100 80 Tamb - Ambient Temperature ( ° C ) 0.1 CD – Diode Capacitance ( pF ) 80 VR = 5 V λ = 950 nm 1.2 1.0 0.8 E=0 f=1MHz 60 40 20 0 20 40 60 80 100 Tamb - Ambient Temperature ( ° C ) 94 8409 100 10 Figure 4. Reverse Light Current vs. Reverse Voltage 1.4 0.6 0 1 V R – Reverse Voltage ( V ) 94 8425 Figure 1. Reverse Dark Current vs. Ambient Temperature I ra rel - Relative Reverse Light Current λ = 950 nm 1 94 8403 0.1 S ( l ) rel – Relative Spectral Sensitivity 10 1 VR = 5 V λ = 950 nm 0.1 0.01 0.1 Ee – Irradiance ( 1 Figure 3. Reverse Light Current vs. Irradiance Document Number 81510 Rev. 1.4, 08-Mar-05 1.2 1.0 0.8 0.6 0.4 0.2 0 750 10 mW/cm2 ) 100 10 Figure 5. Diode Capacitance vs. Reverse Voltage 1000 100 1 V R – Reverse Voltage ( V ) 94 8423 Figure 2. Relative Reverse Light Current vs. Ambient Temperature Ira – Reverse Light Current (µA) 0.5 mW/cm 2 1 94 8424 1 mW/cm 2 94 8408 850 950 1050 1150 l – Wavelength ( nm ) Figure 6. Relative Spectral Sensitivity vs. Wavelength www.vishay.com 3 BPV23F(L) Vishay Semiconductors 0° 10 ° Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 20 ° S rel - Relative Sensitivity 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8413 Package Dimensions in mm 9612205 www.vishay.com 4 Document Number 81510 Rev. 1.4, 08-Mar-05 BPV23F(L) Vishay Semiconductors Package Dimensions in mm 95 11475 Document Number 81510 Rev. 1.4, 08-Mar-05 www.vishay.com 5 BPV23F(L) Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 81510 Rev. 1.4, 08-Mar-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1