Zetex BC846A-Z1A Sot23 npn silicon planar Datasheet

SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
BC846
BC848
BC850
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS
BC847
BC849
COMPLEMENTARY TYPES
BC846A–Z1A
BC848B–1K
BC846
BC856
BC846B–1B
BC848C–Z1L
BC847
BC857
BC847A–Z1E
BC849B–2B
BC848
BC858
BC847B–1F
BC849C–2C
BC849
BC859
BC847C–1GZ
BC850B–2FZ
BC850
BC860
BC848A–1JZ
BC850C-Z2G
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at Tamb=25°C
Operating and Storage
Temperature Range
VCBO
VCES
VCEO
VEBO
IC
ICM
IBM
IEM
Ptot
Tj:Tstg
BC846
BC847
80
80
65
50
50
45
BC848
BC849
30
30
30
30
30
30
5
6
BC850
50
50
45
100
200
200
200
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Max
Collector Cut-Off Current ICBO
Max
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
Typ
900
Min
Typ
Max
580
660
700
UNIT CONDITIONS.
nA
VCB = 30V
VCB = 30V
µA
Tamb=150°C
mV IC=10mA,
mV IB=0.5mA
mV IC=100mA,
mV IB=5mA
mV IC=10mA*
mV
mV IC=10mA,
IB=0.5mA
mV IC=100mA,
IB=5mA
mV IC=2mA
mV VCE=5V
mV
Max
770
mV
VCE(sat) Typ
Max.
Typ
Max.
Typ
Max.
VBE(sat) Typ
VBE
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
BC846
BC847 BC848 BC849 BC850
15
5
90
250
200
600
300
600
700
IC=10mA
VCE=5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
BC846
BC848
BC850
BC847
BC849
ELECTRICAL CHARACTERISTICS (Continued)
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
Dynamic
Group VI
Characteristics
hie
Group A
Group B
BC846 BC847 BC848 BC849 BC850
Group C
Group VI
Group A
Group B
Group C
hre
Group VI
hfe
Group A
Group B
0.4
1.2
2.2
0.4
1.2
2.2
0.4
1.2
2.2
–
–
–
–
–
–
kΩ
kΩ
kΩ
Min
Typ
Max
1.6
2.7
4.5
1.6
2.7
4.5
1.6
2.7
4.5
–
–
–
–
–
–
kΩ
kΩ
kΩ
3.2
4.5
8.5
–
–
–
–
–
–
6
8.7
15
6
8.7
15
6
8.7
15
kΩ
kΩ
kΩ
Typ
Typ
Typ
Typ
2.5
1.5
2
–
2.5
1.5
2
–
2.5
1.5
2
3
–
–
2
3
–
–
2
3
x10-4
x10-4
x10-4
x10-4
Min
Typ
Max
75
110
150
75
110
150
75
110
150
–
–
–
–
–
–
Min
Typ
Max
125
220
260
125
220
260
125
220
260
–
–
–
–
–
–
240
330
500
Min
Typ
Max
–
–
–
450
600
900
450
600
900
450
600
900
450
600
900
Typ
Max
20
40
20
40
20
40
–
–
–
–
µs
µs
Group A
Typ
Max
18
30
18
30
18
30
–
–
–
–
µs
µs
Group B
Typ
Max
30
60
Group C
Typ
Max
–
–
Group VI
hoe
µs
µs
–
–
60
110
PARAMETER
SYMBOL
BC846
BC847 BC848 BC849 BC850
Static
Group VI
Forward
Current Ratio
hFE
75
110
150
75
110
150
Group A
hFE
kΩ
kΩ
kΩ
Min
Typ
Max
Min
Typ
Max
Group C
UNIT CONDITIONS.
Min
Typ
Max
Min
Typ
Max
BC846
BC848
BC850
60
110
60
110
Group B
Group C
VCE=5V
Ic=2mA
hFE
hFE
Min
Typ
Max
75
110
150
–
–
–
BC847
BC849
UNIT CONDITIONS.
IC=2mA, VCE=5V
–
–
–
Typ
90
90
90
–
–
IC=0.01mA, VCE=5V
Min
Typ
Max
110
180
220
110
180
220
110
180
220
–
–
–
–
–
–
IC=2mA, VCE=5V
Typ
120
120
120
–
–
IC=100mA, VCE=5V
Typ
150
IC=0.01mA, VCE=5V
Min
Typ
Max
200
290
450
IC=2mA, VCE=5V
Typ
200
200
200
–
–
IC=100mA, VCE=5V
Typ.
–
270
270
270
270
IC=0.01mA, VCE=5V
Min
Typ
Max
–
–
–
420
500
800
420
500
800
420
500
800
420
500
800
IC=2mA, VCE=5V
Typ
–
–
400
–
–
IC=100mA, VCE=5V
Transition Frequency
fT
Typ
300
MHz IC=10mA, VCE=5V
f=100MHz
Collector-Base
Capacitance
Cobo
Typ
Max
2.5
4.5
pF
pF
VCB=10V f=1MHz
Emitter-Base
Capacitance
Cib0
Typ
9
pF
VEB=0.5V f=1MHz
Noise Figure
N
Typ
Max
2
10
2
10
2
10
1.2
4
1
4
dB
dB
VCE = 5V, IC=200µA,
RG=2kΩ, f=1kHz,
∆f=200Hz
Typ
Max
–
–
–
–
–
–
1.2
4
1
3
dB
dB
VCE = 5V, IC=200µA,
RG=2kΩ, f=30Hz to
15kHz at -3dB
points
Max. –
–
–
110
110
nV
VCE = 5V, IC=200µA,
RG=2kΩ, f=10Hz to
50Hz at -3dB
points
Equivalent Noise
Voltage
en
µs
µs
Spice parameter data is available upon request for this device
BC846
BC848
BC850
BC847
BC849
ELECTRICAL CHARACTERISTICS (Continued)
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
Dynamic
Group VI
Characteristics
hie
Group A
Group B
BC846 BC847 BC848 BC849 BC850
Group C
Group VI
Group A
Group B
Group C
hre
Group VI
hfe
Group A
Group B
0.4
1.2
2.2
0.4
1.2
2.2
0.4
1.2
2.2
–
–
–
–
–
–
kΩ
kΩ
kΩ
Min
Typ
Max
1.6
2.7
4.5
1.6
2.7
4.5
1.6
2.7
4.5
–
–
–
–
–
–
kΩ
kΩ
kΩ
3.2
4.5
8.5
–
–
–
–
–
–
6
8.7
15
6
8.7
15
6
8.7
15
kΩ
kΩ
kΩ
Typ
Typ
Typ
Typ
2.5
1.5
2
–
2.5
1.5
2
–
2.5
1.5
2
3
–
–
2
3
–
–
2
3
x10-4
x10-4
x10-4
x10-4
Min
Typ
Max
75
110
150
75
110
150
75
110
150
–
–
–
–
–
–
Min
Typ
Max
125
220
260
125
220
260
125
220
260
–
–
–
–
–
–
240
330
500
Min
Typ
Max
–
–
–
450
600
900
450
600
900
450
600
900
450
600
900
Typ
Max
20
40
20
40
20
40
–
–
–
–
µs
µs
Group A
Typ
Max
18
30
18
30
18
30
–
–
–
–
µs
µs
Group B
Typ
Max
30
60
Group C
Typ
Max
–
–
Group VI
hoe
µs
µs
–
–
60
110
PARAMETER
SYMBOL
BC846
BC847 BC848 BC849 BC850
Static
Group VI
Forward
Current Ratio
hFE
75
110
150
75
110
150
Group A
hFE
kΩ
kΩ
kΩ
Min
Typ
Max
Min
Typ
Max
Group C
UNIT CONDITIONS.
Min
Typ
Max
Min
Typ
Max
BC846
BC848
BC850
60
110
60
110
Group B
Group C
VCE=5V
Ic=2mA
hFE
hFE
Min
Typ
Max
75
110
150
–
–
–
BC847
BC849
UNIT CONDITIONS.
IC=2mA, VCE=5V
–
–
–
Typ
90
90
90
–
–
IC=0.01mA, VCE=5V
Min
Typ
Max
110
180
220
110
180
220
110
180
220
–
–
–
–
–
–
IC=2mA, VCE=5V
Typ
120
120
120
–
–
IC=100mA, VCE=5V
Typ
150
IC=0.01mA, VCE=5V
Min
Typ
Max
200
290
450
IC=2mA, VCE=5V
Typ
200
200
200
–
–
IC=100mA, VCE=5V
Typ.
–
270
270
270
270
IC=0.01mA, VCE=5V
Min
Typ
Max
–
–
–
420
500
800
420
500
800
420
500
800
420
500
800
IC=2mA, VCE=5V
Typ
–
–
400
–
–
IC=100mA, VCE=5V
Transition Frequency
fT
Typ
300
MHz IC=10mA, VCE=5V
f=100MHz
Collector-Base
Capacitance
Cobo
Typ
Max
2.5
4.5
pF
pF
VCB=10V f=1MHz
Emitter-Base
Capacitance
Cib0
Typ
9
pF
VEB=0.5V f=1MHz
Noise Figure
N
Typ
Max
2
10
2
10
2
10
1.2
4
1
4
dB
dB
VCE = 5V, IC=200µA,
RG=2kΩ, f=1kHz,
∆f=200Hz
Typ
Max
–
–
–
–
–
–
1.2
4
1
3
dB
dB
VCE = 5V, IC=200µA,
RG=2kΩ, f=30Hz to
15kHz at -3dB
points
Max. –
–
–
110
110
nV
VCE = 5V, IC=200µA,
RG=2kΩ, f=10Hz to
50Hz at -3dB
points
Equivalent Noise
Voltage
en
µs
µs
Spice parameter data is available upon request for this device