ANADIGICS ATA7609 10 gb/s high overload tia Datasheet

ATA7609
10 Gb/s High Overload TIA
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
•
1800 Ω Differential Transimpedance
•
3 mApp Maximum Input Current
•
14 pA/√Hz Input Noise Current Density
•
Single –5.2 V Power Supply
GND
•
Low Group Delay
•
Outputs DC or AC Coupled
•
Same Functionality as ATA7603 with the Output
Polarities Reversed
CEXT
GND
GND
IIN
VOUT
GND
VOUT
VEE
VEE
GND
APPLICATIONS
•
SONET/SDH OC-192 /STM-64 VSR,
Short-Reach, Intermediate-Reach, and
Long-Reach Receivers
•
10 Gb/s Ethernet
•
Fiber optic receivers, transceivers, and
transponders
D1
Die
PRODUCT DESCRIPTION
The ANADIGICS ATA7609 is a –5.2 V high-speed
transimpedance amplifier (TIA) designed for
10 Gb/s optical receiver applications available in
bare die form and manufactured using an InGaP
based HBT process. The device is used in
conjunction with a photodetector to convert an
optical signal into a differential output voltage that
can be AC or DC coupled to a post amplifier. The
ATA7609 has an internal overload support circuit
and can accept optical inputs as high as +3 dBm.
With its low noise and high optical overload capability,
the device is well suited for 10 Gb/s Ethernet and
OC-192 Very Short-Reach (VSR), Short-Reach,
Intermediate-Reach and Long-Reach optical
receivers, transceivers and transponders. The
ATA7609 is identical to the ATA7603 but with the
output polarities reversed.
VBIAS
VOUT
IIN
VOUT
VREF
DC
Offset
Control
CEXT
Low Pass
Filter
VEE
Figure 1: Circuit Block Diagram
10/2002
ATA7609
286 mm
GND
CEXT
GND
GND
303 mm
170 mm
ATA7609
Die Size: 1000 mm x 910 mm
IIN
GND
Die Thickness: 178 mm
Backside metal thickness: 5 mm
VOUT
Pad Opening: 100 mm x 100 mm
unless otherwise noted
Pad Pitch 150 mm unless otherwise
noted
VEE
VOUT
GND
VEE
286 mm
Figure 2: Die Size and Layout
Table 1: Pad Description
PAD DESCRIPTION
COMMENTS
V EE
-5.2 V
Negative Supply Voltage
GND Ground
IIN
2
TIA Input
Photocurrent input
CEXT Connection for an External Capacitor
Sets the low frequency cutoff
VOUT Non-inverted Output Voltage
Logical '1' with optical input
VOUT Inverted Output Voltage
Logical '0' with optical input
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
140 mm
ATA7609
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
DC Power Supply (VEE)
-7.0
1.0
V
Storage Temperature
-65
125
°C
-
5.0
mA
100
-
V
DC Input Current
ESD Sensitivity (Human Body Model)
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Recommended Operating Conditions
PARAMETER
MIN
TYP
MAX
UNIT
Operating Voltage Range
-5.50
-5.2
-4.90
V
-40
-
85
o
C
Die Attach Temperature
-
-
260
o
C
Photodiode Capacitance (PIN + stray)
-
0.225
0.3
pF
Photodiode Responsivity
-
0.92
-
A/W
Photodiode Contact Resistance
-
10
15
Ω
0.7
1.0
-
nH
Operating Temperature Range
Input Bondwire Inductance
(1)
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
Notes:
(1) Defined at the interface between the die and the substrate.
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
3
ATA7609
Table 4: DC Electrical Specifications
MIN
TYP
MAX
UNIT
Supply Current (DC Coupled Outputs)
-
95
120
mA
Input Offset Voltage
-
-3.7
-
V
Output Offset Voltage (both ports)
-
-0.2
-
V
PARAMETER
Table 5: AC Electrical Specifications (1)
(VEE = -5.5 V to -4.9 V, Operating Temperature = -40 °C to + 85 °C unless otherwise noted)
PAR AMETER
MIN
TYP
MAX
U N IT
Small Si gnal D i fferenti al Transi mpedance (RL
=
100 Ω)
1300
1800
-
Ω
Small Si gnal D i fferenti al Transi mpedance (RL
=
100 Ω) (2)
1400
-
-
Ω
8.5
9.5
-
GHz
-
30
-
kHz
-
-
1.5
dB
-
30
-
ps
-
40
-
ps
Maxi mum Input C urrent
-
-
3.0
mApp
Opti cal Overload
-
+3
-
dB m
-
1.4
-
µA
-
14
20
pA/√Hz
-
-19
-
dB m
Maxi mum Si ngle-ended Output Voltage Swi ng
-
400
550
mVpp
Output Return Loss (10 MHz to 8 GHz)
-
-
-10
dB
Output Return Loss (8 MHz to 20 GHz)
-
-
-5
dB
Small Si gnal Bandwi dth
Low Frequency C utoff
(3)
Peaki ng
Group D elay D evi ati on (500 MHz to 8.0 GHz)
Group D elay D evi ati on (8 GHz to 9.5 GHz)
(4)
(4)
(5)
Input Referred RMS Noi se C urrent
(6)
Average Input Referred Noi se C urrent D ensi ty
Opti cal Sensi ti vi ty
(5)
(6)
Notes:
(1) The specifications are based upon the use of a PIN photodiode with a responsivity of 0.92 A/W and a
capacitance of CDIODE + CSTRAY = 0.3 pF max connected to IIN via a 1.0 nH bond wire.
(2) Operating temperature range = -5 °C to +85 °C.
(3) With the use of an external 10 nF capacitor.
(4) Maximum value - minimum value
(5) Measured at 10-10 BER with a 223 -1 PRBS at 10 Gb/s
(6) Bandwidth = 9 GHz
4
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
ATA7609
PERFORMANCE DATA
Figure 3: Typical Small Signal Frequency
Response
Figure 4: Typical Small Signal Group Delay
320
27.2
3 dB Bandwidth = 9.9 GHz
300
Group Delay (ps)
Response(dB)
24.2
21.2
18.2
280
260
240
220
200
15.2
0
2
4
6
8
Frequency(GHz)
10
12
180
0
2
4
6
8
10
12
Frequency(GHz)
Figure 6: Differential Transimpedance vs.
Input Current
Figure 5: Bandwidth vs. Input Inductance
65
3.000
64
2.500
63
2.000
Vee=-5.2V
Tz (Kohms)
VEE=-5.5V
62
61
Gain (dB)
VEE=-4.9V
1.500
1.000
60
Lin = 30mils, BW = 9.3GHz
59
Lin = 35mils, BW = 9.6GHz
0.500
0.000
Lin = 40mils, BW = 9.9GHz
58
10
100
Lin = 45mils, BW = 10.6GHz
57
Lin = 50mils, BW = 10.9GHz
56
Lin = 55mils, BW = 11.1GHz
1000
10000
Input Current (uApp)
Lin = 60mils, BW = 11.1GHz
55
0
2
4
6
8
10
12
Frequency (GHz)
Figure 8: Differential Output Voltage vs.
Input Current up to 4000 mApp
900
900
800
800
700
700
Output Voltage (mVpp)
Output Voltage (mVpp)
Figure 7: Differential Output Voltage vs.
Input Current up to 1000 mApp
600
500
400
300
200
VEE=-5.2V
600
500
400
300
200
VEE=-5.2V
VEE=-4.9V
100
VEE=-4.9V
100
VEE=-5.5V
VEE=-5.5V
0
0
200
400
600
Input Current (uApp)
800
1000
0
0
500
1000
1500
2000
2500
3000
3500
4000
Input Current (uApp)
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
5
ATA7609
Figure 9: Eye Diagram with an Optical Input
Power of -18 dBm
Figure 10: Eye Diagram with an Optical
Input Power of -10 dBm
Figure 11: Eye Diagram with an Optical
Input Power of 0 dBm
Figure 12: Eye Diagram with an Optical
Input Power of +3 dBm
Figure 13: Eye Diagram with an Optical
Input Power of +4 dBm
Figure 14: S22 from Evaluation Test Fixture
0
-5
S22 (dB)
-10
-15
-20
-25
-30
-35
-40
0
2
4
6
8
10
12
Frequency (GHz)
6
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
14
16
18
20
ATA7609
APPLICATION INFORMATION
Ceramic substrate
CEXT
10nF
2 nH
typical
Ground pads
1.0 nH
typical
VOUT
(50 W)
470 pF
Photodiode
ATA7609
470 pF
VOUT
(50 W)
Kovar
pedestal
220 pF VEE bypass
MIM capacitor
10 nF
VBIAS
All die bonds are 0.5 nH
typical unless otherwise
noted
VEE
Figure 15: Bonding Diagram
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
7
ATA7609
PACKAGING AND TESTING
The ATA7609 is provided as bare die. For optimum
performance, the die should be packaged in a
hermetic enclosure and a low inductance ground
plane should be made available for power supply
bypassing and ground bonds. When packaging the
ATA7609, the temperature of the die must be kept
below 260 °C to ensure device reliability. The
ATA7609 has backside metal but no ground vias are
connected to the backside of the die, so it is critical
to bond all of the ground pads to reduce ground
inductance. The die can be attached to the substrate
using epoxy or solder. A good thermally conductive,
silver-filled epoxy is recommended for epoxy
mounting. If solder is used for die attach, exposure
to temperatures at or above 260 °C must be limited
to ensure the device reliability. A soft silicon/rubber
tip collet should be used for die mounting, although
tweezers can be used with extreme care.
Thermosonic ball bonding, at a stage temperature
of 150 to 175 °C, with 1 to 1.3 mil gold wire, is the
recommended interconnect technique. The bond
force, time, and ultrasonic power are all critical
parameters and should be optimized to achieve the
best bonding performance. The recommended
bonding parameters are:
Stage Temperature: 175 °C
Bond Time: 15 ms
Bond Ultrasonic Power: 70 mW
Bond Force: 70 g
Bond Velocity: 60 mils/ms
VEE Connections
In order to achieve optimal performance, the VEE
supply pads must be bypassed as close to the chip
as possible with one or two high resonant frequency,
low value capacitance, MIM capacitors. In either
case, both VEE bond pads need to be connected to
reduce the supply bond wire inductance.
VOUT and VOUT Connections
The ATA7609 provides a differential output that can
be AC or DC coupled to the next stage of the receiver.
The output bond wires should be kept below 1 nH
for the best performance. If the device is being used
in a single-ended configuration, the unused output
port must be terminated into 50 Ω.
CEXT Connection
In order to achieve the desired low frequency cutoff,
an external capacitor is required. A low inductance
multilayer chip capacitor of value 10 nF is
recommended.
RF Testing
The following parameters are 100% RF tested on
wafer in production at -5.2V at room temperature
with 0 input forced current and 1.6mA DC input
current: current, transimpedance, bandwidth,
peaking, group delay, S11, S22, input offset voltage
and output offset voltage.
All other parameters are guaranteed by design.
IIN Connection
For optimal performance, the bond wire from the
photodetector to IIN should be around 1nH. As the
inductance of this connection increases beyond 1nH,
more gain peaking will occur and the group delay
performance will degrade.
8
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
ATA7609
TYPICAL APPLICATION CIRCUITS
100 nF
VBIAS
VOUT
VIN
DCOUT DCOUT
VOUT
IIN
VIN
CEXT
VEE
VOUT
VEEOS
ATA7609
10 nF
VOUT
VEE
ALA7606
VEE
VEE
50 W
VEE
50 W
Figure 16: ATA7609 DC Coupled to the ALA7606
100 nF
VBIAS
VOUT
VIN
DCOUT DCOUT
VOUT
IIN
VIN
CEXT
VEE
VOUT
VEEOS
VEE
ATA7609
10 nF
VEE
VOUT
ALA7606
VEE
VEE
50 W
50 W
Figure 17: ATA7609 AC Coupled to the ALA7606
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
9
ATA7609
NOTES
10
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
ATA7609
NOTES
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
11
ATA7609
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
ATA7609D1
-40 oC to +85 oC
D1
Die
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: [email protected]
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
12
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
Similar pages