<^>£.ml-(2ona.uctoi Lpioaucti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN - MJ15022, MJ15024* *MJ15024 is a Preferred Device Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100% Tested) - 2 A @ 80 V • High DC Current Gain - h FE = 15 (Min) @ Ic = 8 Adc 16 AMPERES SILICON POWER TRANSISTORS 200 - 250 VOLTS, 250 WATTS MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage MJ 15022 MJ 15024 Collector-Base Voltage MJ 15022 MJ 15024 Value Unit Vdc VCEO 200 250 VCBO Vdc 350 400 Vdc Emitter-Base Voltage VEBO 5 Collector-Emitter Voltage VCEX 400 Vdc Ic 16 30 Adc Base Current - Continuous IB 5 Adc Total Device Dissipation @ Tc = 25"C Derate above 25°C PD 250 1.43 W W/"C -65 to +200 °C Collector Current - Continuous - Peak (Note 1) Operating and Storage Junction Temperature Range Tj, Ts(g (TO-3) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol Max Unit 0.70 J C/W RHJC Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished hy NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors NPN-MJ15022, MJ15024* ELECTRICAL CHARACTERISTICS (Tc = 25=C unless otherwise noted) Characteristic Symbol Min Max 200 250 - - 250 250 : 500 500 — 500 5 2 - 15 5 60 - - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (lc = lOOmAdc, IB = 0) VCEO(SUS) MJ15022 MJ 15024 Collector Cutoff Current (VCE = 200 Vdc, VBE(off) = 1.5 Vdc) (VCE = 250 Vdc, VBE(0ff) = 1.5 Vdc) MJ 1 5022 MJ15024 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 vdc, IB = 0) MJ 15022 MJ1 5024 (iAdc 'CEX 'CEO Emitter Cutoff Current (VCE = 5 Vdc, IB = 0) !EBO iiAdc |.iAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 0.5 s (non-repetitive)) (VCE = 80 Vdc, t = 0.5 s (non-repetitive)) Adc 's/b - ON CHARACTERISTICS DC Current Gain (lc = 8 Adc, VCE = 4 Vdc) (lc = 16 Adc, VCE = 4 Vdc) - HFE Collector-Emitter Saturation Voltage (lc = 8Adc, IB = 0.8 Adc) (lc = 16 Adc, IB = 3.2 Adc) Vdc VcE(sat) Base- Emitter On Voltage (lc = 8 Adc, VCE = 4 Vdc) - 1.4 4.0 vBE(on) - 2.2 Vdc fT 4 — MHz Cob " 500 PF DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (lc = 1 Adc, V CE = 10 Vdc, f,est = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) 2. Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%. There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate lc - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure I is based on Tj(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values Ion than the limitations imposed by second breakdown. 100 50 TC 1 20 - *\M ^"l cn o v - E ONDI NGWIF E _ TE D } —t. o - T HERU1AL LIM IT/ VTIC N ( 5INGL EPULS E b ECOI>IDBRE W D0\ <VN - IpHf L MITE D \2 CD p —•• ro 1C, COLLECTOR CURR! ^ 10 0.1 0.2 0.5 10 20 50 100 \ 250 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active-Region Safe Operating Area 1k