ON MMBT918LT1G Vhf/uhf transistor npn silicon Datasheet

MMBT918LT1G
VHF/UHF Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
15
Vdc
Collector −Base Voltage
VCBO
30
Vdc
Emitter −Base Voltage
VEBO
3.0
Vdc
IC
50
mAdc
Collector Current − Continuous
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
3
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
SOT−23 (TO−236)
CASE 318
STYLE 6
300
2.4
mW
mW/°C
MARKING DIAGRAM
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
2
M3B M G
G
1
M3B = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT918LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
1
Publication Order Number:
MMBT918LT1/D
MMBT918LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
15
−
30
−
3.0
−
−
50
20
−
−
0.4
−
1.0
600
−
−
−
3.0
1.7
−
2.0
−
6.0
30
−
11
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Noise Figure
(IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 W, f = 60 MHz) (Figure 1)
NF
Power Output
(IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz)
Pout
Common−Emitter Amplifier Power Gain
(IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz)
Gpe
VBB
VCC
EXTERNAL
100 k
1000 pF BYPASS
0.018 mF
0.018 mF
3
C
50 W
G
0.018 mF
NF TEST CONDITIONS
IC = 1.0 mA
VCE = 6.0 VOLTS
RS = 50 W
f = 60 MHz
0.018 mF
Gpe TEST CONDITIONS
IC = 6.0 mA
VCE = 12 VOLTS
f = 200 MHz
Figure 1. NF, Gpe Measurement Circuit 20−200
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2
RF
VM
MHz
pF
pF
dB
mW
dB
MMBT918LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT918LT1/D
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