TI BQ24707 Bq24707x 1-4 cell li battery smbus charge controller with independent comparator and advanced circuit protection Datasheet

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bq24707, bq24707A
SLUSA78C – JULY 2010 – REVISED JULY 2015
bq24707x 1-4 Cell Li+ Battery SMBus Charge Controller With Independent Comparator
and Advanced Circuit Protection
1 Features
3 Description
•
The bq24707 and bq24707A devices are highefficiency, synchronous battery chargers, offering low
component count for space-constrained, multichemistry battery charging applications.
1
•
•
•
•
•
•
•
•
•
•
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SMBus Host-Controlled NMOS-NMOS
Synchronous Buck Converter With Programmable
615 kHz, 750 kHz, and 885 kHz Switching
Frequency
Real-Time System Control on ILIM Pin to Limit
Charge Current
Enhanced Safety Features for Overvoltage
Protection, Overcurrent Protection, Battery,
Inductor, and MOSFET Short-Circuit Protection
Programmable Input Current, Charge Voltage,
Charge Current Limits
– ±0.5% Charge Voltage Accuracy up to 19.2 V
– ±3% Charge Current Accuracy up to 8.128 A
– ±3% Input Current Accuracy up to 8.064 A
– ±2% 20× Adapter Current or Charge Current
Output Accuracy
Programmable Adapter Detection and Indicator
Independent Comparator With Internal Reference
Integrated Soft-Start
Integrated Loop Compensation
AC Adapter Operating Range 5 V to 24 V
15-µA Off-State Battery Discharge Current
20-pin 3.5 mm × 3.5 mm QFN Package
bq24707: ACOK Delay Default 1.3 s
bq24707A: ACOK Delay Default 1.2 ms
SMBus controlled input current, charge current, and
charge voltage DACs allow for very high regulation
accuracies that can be easily programmed by the
system power management micro-controller.
The IC uses the internal input current register or
external ILIM pin to throttle down PWM modulation to
reduce the charge current.
The IC provides an IFAULT output to alarm if any
MOSFET fault or input over current occurs. This
alarm output allows users to turn off input power
selectors when the fault occurs. Meanwhile, an
independent comparator with internal reference is
available to monitor input current, output current, or
output voltage.
The IC charges one-, two-, three-, or four-series Li+
cells, and is available in a 20-pin, 3.5 × 3.5 mm QFN
package.
Device Information(1)
PART NUMBER
bq24707
VQFN (20)
bq24707A
•
•
•
•
Portable Notebook Computers, UMPCs, Ultra-Thin
Notebooks, and Netbooks
Personal Digital Assistants
Handheld Terminals
Industrial and Medical Equipment
Portable Equipment
BODY SIZE (NOM)
3.50 mm × 3.50 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
•
PACKAGE
Simplified Schematic
Enhanced Safety:
OCP, OVP,FET Short
Adapter P
4.5-24 V Q1
P
RAC
SYS
Q2
Adapter Detection
SMBus Controls V & I
with high accuracy
SMBus
bq2707x
Battery
Pack
Charge
Controller
RSR
1S-4S
HOST
Integration:
Loop Compensation; Soft-Start
Comparator
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
bq24707, bq24707A
SLUSA78C – JULY 2010 – REVISED JULY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
8
1
1
1
2
3
3
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 5
Electrical Characteristics........................................... 6
Timing Requirements .............................................. 10
Typical Characteristics ............................................ 11
Detailed Description ............................................ 14
8.1 Overview ................................................................. 14
8.2 Functional Block Diagram ....................................... 15
8.3 Feature Description................................................. 16
8.4 Device Functional Modes........................................ 17
8.5 Programming........................................................... 18
9
Application and Implementation ........................ 26
9.1 Application Information............................................ 26
9.2 Typical Application ................................................. 26
10 Power Supply Recommendations ..................... 31
11 Layout................................................................... 31
11.1 Layout Guidelines ................................................. 31
11.2 Layout Example .................................................... 33
12 Device and Documentation Support ................. 35
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Device Support......................................................
Documentation Support ........................................
Related Links ........................................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
35
35
35
35
35
35
35
13 Mechanical, Packaging, and Orderable
Information ........................................................... 36
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (March 2011) to Revision C
•
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section .................................................................................................. 1
Changes from Revision A (November 2010) to Revision B
Page
•
Added Features for the bq24707 and bq24707A .................................................................................................................. 1
•
Added device bq24707A to this data sheet............................................................................................................................ 1
•
Added bq24707A to the ORDERING INFORMATION table .................................................................................................. 3
•
Added the COMPARISON TABLE ......................................................................................................................................... 3
•
Added bq24707 only to the test condition of tACOK_FALL_DEG first row .................................................................................... 10
•
Added bq24707A only to the test condition of tACOK_FALL_DEG second row............................................................................ 10
•
Added (bq24707) to the title of Figure 2............................................................................................................................... 11
•
Added a new paragraph in the Battery Over Voltage Protection (BATOVP) section........................................................... 17
•
Changed the Description of the ACOK Deglitch Time Adjust bit in Table 3......................................................................... 20
•
Changed the Adapter Detect and ACOK Output section. included 1.3s for bq24707 and 1.2ms for bq24707A................. 24
•
Changed the Description of item U1 in Table 9 ................................................................................................................... 30
Changes from Original (July 2010) to Revision A
Page
•
Updated the description for the SRN and SRP pins .............................................................................................................. 4
•
Changed the Functional Block Diagram, Figure 16.............................................................................................................. 26
•
Added Added section: Negative Output Voltage Protection................................................................................................. 27
•
Deleted C12, added R14 and R15 in Table 9 ...................................................................................................................... 30
2
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Copyright © 2010–2015, Texas Instruments Incorporated
Product Folder Links: bq24707 bq24707A
bq24707, bq24707A
www.ti.com
SLUSA78C – JULY 2010 – REVISED JULY 2015
5 Device Comparison Table
CONDITION
bq24707
bq24707A
ACOK default delay
1.3 s
1.2 ms
Suggest fully charged battery ChargeVoltage() setting
after termination
Full scale charge voltage(12.592 V for 3-S battery)
0V
Suggest fully charged battery ChargeCurrent() setting
after termination
0A
0A
6 Pin Configuration and Functions
VCC
PHASE
HIDRV
BTST
REGN
RGR Package
20-Pin VQFN
Top View
20
19
18
17
16
ACN 1
ACP
2
bq24707
bq24707A
CMPOUT 3
CMPIN 4
LODRV
14
GND
13
SRP
12
SRN
11 IFAULT
8
9
10
ILIM
7
SCL
ACDET
6
SDA
5
IOUT
ACOK
15
Pin Functions
PIN
NAME
DESCRIPTION
NO.
ACDET
6
Adapter detection input. Program the adapter valid input threshold by connecting a resistor-divider from the adapter
input to the ACDET pin to the GND pin. When the ACDET pin is above 0.6 V and VCC is above UVLO, REGN LDO is
present, ACOK comparator and IOUT are both active.
ACN
1
Input current-sense resistor negative input. Place an optional 0.1-µF ceramic capacitor from ACN to GND for commonmode filtering. Place a 0.1-µF ceramic capacitor from ACN to ACP to provide differential-mode filtering.
ACOK
5
AC adapter detect open-drain output. The output is pulled LOW to GND by an internal MOSFET when the voltage on
the ACDET pin is above 2.4 V, voltage on the VCC pin is above UVLO and voltage on the VCC pin is 245 mV above
the voltage on the SRN pin, indicating a valid adapter is present to start charge. If any one of the above conditions
cannot meet, it is pulled HIGH to the external pullup supply rail by an external pullup resistor. Connect a 10-kΩ pullup
resistor from the ACOK pin to the pullup supply rail.
ACP
2
Input current-sense resistor positive input. Place a 0.1-µF ceramic capacitor from ACP to GND for common-mode
filtering. Place a 0.1-µF ceramic capacitor from ACN to ACP to provide differential-mode filtering.
BTST
17
High-side power MOSFET driver power supply. Connect a 0.047-µF capacitor from BTST to PHASE, and a bootstrap
Schottky diode from REGN to BTST.
CMPIN
4
Input of independent comparator. The comparator has one 50-kΏ series resistor and one 2000-kΏ pulldown resistor.
Program CMPIN voltage by connecting a resistor-divider from the IOUT pin to the CMPIN pin to the GND pin for
adapter or charge current comparison or from the SRN pin to the CMPIN pin to the GND pin for battery voltage
comparison. The internal reference is 0.6 V or 2.4 V, selectable by SMBus command ChargeOption(). When CMPIN is
above the internal reference, CMPOUT goes HIGH. Place a resistor between CMPIN and CMPOUT to program
hysteresis.
CMPOUT
3
Open-drain output of independent comparator. Place a 10-kΩ pullup resistor from CMPOUT to pullup supply rail.
Internal reference is 0.6 V or 2.4 V, selectable by SMBus command ChargeOption(). When CMPIN is above the
internal reference, CMPOUT goes HIGH. Place a resistor between CMPIN and CMPOUT to program hysteresis.
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Product Folder Links: bq24707 bq24707A
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Pin Functions (continued)
PIN
NAME
DESCRIPTION
NO.
GND
14
IC ground. On PCB layout, connect to the analog ground plane, and only connect to power ground plane through the
PowerPAD™ underneath the IC.
HIDRV
18
High-side power MOSFET driver output. Connect to the high-side N-channel MOSFET gate.
IFAULT
11
Open-drain output. The output is pulled LOW by an internal MOSFET when ACOC or a short-circuit is detected. The
output is pulled HIGH to the external pullup supply rail by an external pullup resistor in normal condition.
ILIM
10
Charge current-limit input. Program ILIM voltage by connecting a resistor-divider from the system reference 3.3-V rail
to the ILIM pin to the GND pin. The lower of the ILIM voltage or DAC limit voltage sets the charge current regulation
limit. To disable control on ILIM, set ILIM above 1.6 V. Once the voltage on the ILIM pin falls below 75 mV, charge is
disabled. Charge is enabled when the ILIM pin rises above 105 mV.
IOUT
7
Buffered adapter or charge current output, selectable with SMBus command ChargeOption(). IOUT voltage is 20 times
the differential voltage across the sense resistor. Place a 100-pF or less ceramic decoupling capacitor from the IOUT
pin to GND.
LODRV
15
Low-side power MOSFET driver output. Connect to low-side N-channel MOSFET gate.
PHASE
19
High-side power MOSFET driver source. Connect to the source of the high-side N-channel MOSFET.
Exposed pad beneath the IC. Analog ground and power ground star-connected only at the PowerPAD plane. Always
solder PowerPAD to the board, and have vias on the PowerPAD plane connecting to analog ground and power
ground planes. The pad also serves as a thermal pad to dissipate the heat.
PowerPAD
REGN
16
Linear regulator output. REGN is the output of the 6-V linear regulator supplied from VCC. The LDO is active when the
voltage on the ACDET pin is above 0.6 V and voltage on VCC is above UVLO. Connect a 1-µF ceramic capacitor from
REGN to GND.
SCL
9
SMBus open-drain clock input. Connect to the SMBus clock line from the host controller or smart battery. Connect a
10-kΩ pullup resistor according to SMBus specifications.
SDA
8
SMBus open-drain data I/O. Connect to the SMBus data line from the host controller or smart battery. Connect a 10kΩ pullup resistor according to SMBus specifications.
SRN
12
Charge current-sense resistor negative input. The SRN pin is for battery voltage sensing as well. Connect SRN pin to
a 7.5-Ω resistor first then from resistor another terminal connect a 0.1-µF ceramic capacitor to GND for common-mode
filtering and connect to current-sensing resistor. Connect a 0.1-µF ceramic capacitor between current sensing resistor
to provide differential-mode filtering. See Application and Implementation about negative output voltage protection for
hard shorts on battery-to-ground or battery-reverse connection by adding small resistor.
SRP
13
Charge current-sense resistor positive input. Connect SRP pin to a 10-Ω resistor first, then, from resistor another
terminal, connect to current-sensing resistor. Connect a 0.1-µF ceramic capacitor between current sensing resistor to
provide differential-mode filtering. See Application and Implementation about negative output voltage protection for
hard shorts on battery-to-ground or battery-reverse connection by adding small resistor.
VCC
20
Input supply, diode OR from adapter or battery voltage. Use 10-Ω resistor and 1-µF capacitor to ground as low pass
filter to limit inrush current.
4
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Copyright © 2010–2015, Texas Instruments Incorporated
Product Folder Links: bq24707 bq24707A
bq24707, bq24707A
www.ti.com
SLUSA78C – JULY 2010 – REVISED JULY 2015
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
SRN, SRP, ACN, ACP, VCC
PHASE
MIN
MAX
–0.3
30
UNIT
–2
30
ACDET, SDA, SCL, LODRV, REGN, IOUT, ILIM, ACOK, IFAULT, CMPIN,
CMPOUT
–0.3
7
BTST, HIDRV
–0.3
36
SRP–SRN, ACP–ACN
–0.5
0.5
Junction temperature, TJ
–40
155
°C
Storage temperature, Tstg
–55
155
°C
Voltage
Maximum difference
voltage
(1)
(2)
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to GND if not specified. Currents are positive into, negative out of the specified terminal. Consult Packaging
Section of the data book for thermal limitations and considerations of packages.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged device model (CDM), per JEDEC specification JESD22C101 (2)
±500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX
SRN, SRP, ACN, ACP, VCC
0
24
–2
24
ACDET, SDA, SCL, LODRV, REGN, IOUT, ILIM, ACOK, IFAULT, CMPIN,
CMPOUT
0
6.5
BTST, HIDRV
0
30
PHASE
Voltage
Maximum difference voltage
SRP–SRN, ACP–ACN
Junction temperature, TJ
UNIT
V
–0.2
0.2
V
0
125
°C
7.4 Thermal Information
bq24707x
THERMAL METRIC (1)
RGR [VQFN]
UNIT
20 PINS
RθJA
46.8
°C/W
RθJC(top) Junction-to-case (top) thermal resistance
56.9
°C/W
RθJB
Junction-to-board thermal resistance
46.6
°C/W
ψJT
Junction-to-top characterization parameter
0.6
°C/W
ψJB
Junction-to-board characterization parameter
15.3
°C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance
4.4
°C/W
(1)
Junction-to-ambient thermal resistance
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
Copyright © 2010–2015, Texas Instruments Incorporated
Product Folder Links: bq24707 bq24707A
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7.5 Electrical Characteristics
4.5 V ≤ V(VCC) ≤ 24 V, 0°C ≤ TJ ≤ 125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OPERATING CONDITIONS
VVCC_OP
VCC Input voltage operating
4.5
24
V
1.024
19.2
V
16.884
V
CHARGE VOLTAGE REGULATION
VBAT_REG_RNG
BAT voltage regulation
ChargeVoltage() = 0x41A0H
ChargeVoltage() = 0x3130H
VBAT_REG_ACC
Charge voltage regulation accuracy
ChargeVoltage() = 0x20D0H
ChargeVoltage() = 0x1060H
16.716
16.8
–0.5%
12.529
0.5%
12.592
–0.5%
8.35
V
0.5%
8.4
–0.6%
4.163
12.655
8.45
V
0.6%
4.192
4.221
V
–0.7%
0.7%
0
81.28
mV
4219
mA
CHARGE CURRENT REGULATION
VIREG_CHG_RNG
Charge current regulation differential
voltage
VIREG_CHG = VSRP - VSRN
ChargeCurrent() = 0x1000H
ChargeCurrent() = 0x0800H
ICHRG_REG_ACC
Charge current regulation accuracy
10-mΩ current-sensing resistor
ChargeCurrent() = 0x0200H
ChargeCurrent() = 0x0100H
ChargeCurrent() = 0x0080H
3973
4096
–3%
1946
3%
2048
–5%
410
512
614
mA
20%
256
–33%
64
mA
5%
–20%
172
2150
340
mA
33%
128
192
mA
–50%
50%
0
80.64
mV
4219
mA
INPUT CURRENT REGULATION
VIREG_DPM_RNG
Input current regulation differential
voltage
VIREG_DPM = VACP – VACN
3973
InputCurrent() = 0x1000H
1946
InputCurrent() = 0x0800H
IDPM_REG_ACC
4096
–3%
3%
2048
2150
1024
1178
–5%
Input current regulation accuracy
10-mΩ current-sensing resistor
870
InputCurrent() = 0x0400H
5%
–15%
384
InputCurrent() = 0x0200H
mA
mA
15%
512
–25%
640
mA
25%
INPUT CURRENT OR CHARGE CURRENT-SENSE AMPLIFIER
VACP/N_OP
Input common mode
Voltage on ACP/ACN
4.5
24
V
VSRP/N_OP
Output common mode
Voltage on SRP/SRN
0
19.2
V
VIOUT
IOUT output voltage
0
1.6
IIOUT
IOUT output current
0
1
AIOUT
Current-sense amplifier gain
6
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V(ICOUT)/V(SRP-SRN) or V(ACP-ACN)
20
V
mA
V/V
Copyright © 2010–2015, Texas Instruments Incorporated
Product Folder Links: bq24707 bq24707A
bq24707, bq24707A
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SLUSA78C – JULY 2010 – REVISED JULY 2015
Electrical Characteristics (continued)
4.5 V ≤ V(VCC) ≤ 24 V, 0°C ≤ TJ ≤ 125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
VIOUT_ACC
CIOUT_MAX
Current-sense output accuracy
TEST CONDITIONS
MIN
TYP
MAX
V(SRP-SRN) or V(ACP-ACN) = 40.96 mV
–2%
V(SRP-SRN) or V(ACP-ACN) = 20.48 mV
–4%
4%
V(SRP-SRN) or V(ACP-ACN) = 10.24 mV
–15%
15%
V(SRP-SRN) or V(ACP-ACN) = 5.12 mV
–20%
20%
V(SRP-SRN) or V(ACP-ACN) = 2.56 mV
–33%
33%
V(SRP-SRN) or V(ACP-ACN) = 1.28 mV
–50%
50%
UNIT
2%
Maximum output load capacitance
For stability with 0- to 1-mA load
REGN regulator voltage
VVCC > 6.5 V, VACDET > 0. 6V (0-55
mA load)
5.5
6
VREGN = 0 V, VVCC > UVLO charge
enabled and not in TSHUT
65
80
VREGN = 0 V, VVCC > UVLO charge
disabled or in TSHUT
7
16
100
pF
6.5
V
REGN REGULATOR
VREGN_REG
IREGN_LIM
REGN current limit
IREGN_LIM_TSHUT
REGN output capacitor required for
stability
CREGN
ILOAD = 100 µA to 65 mA
mA
1
µF
INPUT UNDERVOLTAGE LOCKOUT COMPARATOR (UVLO)
VUVLO
Input undervoltage rising threshold
VVCC rising
VUVLO_HYS
Input undervoltage falling hysteresis
VVCC falling
3.5
3.75
4
340
V
mV
FAST DPM COMPARATOR (FAST_DPM)
VFAST_DPM
Fast DPM comparator stop charging
rising threshold with respect to input
current limit, voltage across input
sense resistor rising edge (specified
by design)
108%
QUIESCENT CURRENT
IBAT
Total battery leakage current to ISRN
+ ISRP +IPHASE + IVCC + IACP + IACN
VVCC < VBAT = 16.8 V, TJ = 0 to
85°C
ISTANDBY
Standby quiescent current, IVCC +
IACP + IACN
VVCC > VUVLO, VACDET > 0.6 V,
charge disabled,
TJ = 0 to 85°C
IAC_NOSW
Adapter bias current during charge,
IVCC + IACP + IACN
IAC_SW
15
µA
0.5
1
mA
VVCC > VUVLO, VACDET > 2.4 V,
charge enabled, no switching, TJ =
0 to 85°C
1.5
3
mA
Adapter bias current during charge,
IVCC + IACP + IACN
VVCC > VUVLO, VACDET > 2.4 V,
charge enabled, switching,
MOSFET Sis412DN
10
VACOK_FALL
ACOK falling threshold
VVCC>VUVLO, VACDET rising
2.376
VACOK_RISE_HYS
ACOK rising hysteresis
VVCC>VUVLO, VACDET falling
35
VWAKEUP_RISE
WAKEUP detect rising threshold
VVCC>VUVLO, VACDET rising
VWAKEUP_FALL
WAKEUP detect falling threshold
VVCC>VUVLO, VACDET falling
0.3
0.51
mA
ACOK COMPARATOR
2.4
2.424
V
55
75
mV
0.57
0.8
V
V
VCC to SRN COMPARATOR (VCC_SRN)
VVCC-SRN_FALL
VCC-SRN falling threshold
VVCC falling towards VSRN
70
125
180
mV
VVCC-SRN
VCC-SRN rising hysteresis
VVCC rising above VSRN
70
120
170
mV
_RHYS
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Electrical Characteristics (continued)
4.5 V ≤ V(VCC) ≤ 24 V, 0°C ≤ TJ ≤ 125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
HIGH-SIDE IFAULT COMPARATOR (IFAULT_HI)
VIFAULT_HI_RISE
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ChargeOption() bit [8:7] = 00
200
300
450
ChargeOption() bit [8:7] = 01
330
500
700
ChargeOption() bit [8:7] = 10
(default)
450
700
1000
ChargeOption() bit [8:7] = 11
600
900
1250
40
110
160
ChargeOption() bit [2:1] = 01
120%
133%
145%
ChargeOption() bit [2:1] = 10
(default)
150%
166%
180%
ChargeOption() bit [2:1] = 11
200%
222%
240%
40
45
50
mV
(1)
ACP to PHASE rising threshold
mV
LOW-SIDE IFAULT COMPARATOR (IFAULT_LOW)
VIFAULT_LOW_RISE
PHASE to GND rising threshold
mV
INPUT OVERCURRENT COMPARATOR (ACOC) (1)
Adapter overcurrent rising threshold
with respect to input current limit,
voltage across input sense resistor
rising edge
VACOC
VACOC_min
Min ACOC threshold clamp voltage
ChargeOption() bit [2:1] = 01
(133%),
InputCurrent() = 0x0400H
(10.24mV)
VACOC_max
Max ACOC threshold clamp voltage
ChargeOption() bit [2:1] = 11
(222%),
InputCurrent() = 0x1F80H
(80.64mV)
140
150
160
mV
tACOC_DEG
ACOC deglitch time (specified by
design)
Voltage across input sense resistor
rising to disable charge
1.7
2.5
3.3
ms
103%
104%
106%
BAT OVERVOLTAGE COMPARATOR (BAT_OVP)
VOVP_RISE
Overvoltage rising threshold as
percentage of VBAT_REG
VSRN rising
VOVP_FALL
Overvoltage falling threshold as
percentage of VBAT_REG
VSRN falling
102%
CHARGE OVERCURRENT COMPARATOR (CHG_OCP)
ChargeCurrent() = 0x0xxxH
VOCP_RISE
Charge overcurrent rising threshold,
ChargeCurrent() = 0x1000H –
measure voltage drop across current- 0x17C0H
sensing resistor
ChargeCurrent() = 0x1800 H–
0x1FC0H
54
60
66
80
90
100
110
120
130
1
5
9
mV
mV
mV
CHARGE UNDERCURRENT COMPARATOR (CHG_UCP)
VUCP_FALL
Charge undercurrent falling threshold
VSRP falling towards VSRN
mV
LIGHT LOAD COMPARATOR (LIGHT_LOAD)
VLL_FALL
Light load falling threshold
Measure voltage drop across
current-sensing resistor
1.25
VLL_RISE_HYST
Light load rising hysteresis
Measure voltage drop across
current-sensing resistor
1.25
mV
mV
BATTERY LOWV COMPARATOR (BAT_LOWV)
VBATLV_FALL
Battery LOWV falling threshold
VSRN falling
VBATLV_RHYST
Battery LOWV rising hysteresis
VSRN rising
2.4
200
2.5
2.6
mV
V
IBATLV
Battery LOWV charge current limit
10-mΩ current sensing resistor
0.5
A
THERMAL SHUTDOWN COMPARATOR (TSHUT)
TSHUT
Thermal shutdown rising temperature
Temperature rising
155
°C
TSHUT_HYS
Thermal shutdown hysteresis, falling
Temperature falling
20
°C
(1)
8
User can adjust threshold through SMBus ChargeOption() REG0x12.
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Electrical Characteristics (continued)
4.5 V ≤ V(VCC) ≤ 24 V, 0°C ≤ TJ ≤ 125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ILIM COMPARATOR
VILIM_FALL
ILIM as CE falling threshold
VILIM falling
60
75
90
mV
VILIM_RISE
ILIM as CE rising threshold
VILIM rising
90
105
120
mV
0.8
V
1
μA
LOGIC INPUT (SDA, SCL)
VIN_
VIN_
IIN_
LO
Input low threshold
HI
Input high threshold
LEAK
2.1
Input bias current
V=7V
V
–1
LOGIC OUTPUT OPEN DRAIN (ACOK, SDA, IFAULT, CMPOUT)
VOUT_
IOUT_
LO
LEAK
Output saturation voltage
5-mA drain current
500
mV
Leakage current
V=7V
–1
1
μA
V=7V
–1
1
μA
7
μA
ANALOG INPUT (ACDET, ILIM)
IIN_
LEAK
Input bias current
ANALOG INPUT (CMPIN has 50-kΩ series resistor and 2000-kΩ pulldown resistor)
IIN_LEAK
Input bias current
V=7V
1
3.5
FSW
PWM switching frequency
FSW+
PWM increase frequency
ChargeOption() bit [9] = 0 (default)
600
750
900
kHz
ChargeOption() bit [10:9] = 11
665
885
1100
kHz
FSW–
PWM decrease frequency
ChargeOption() bit [10:9] = 01
465
615
765
kHz
PWM OSCILLATOR
PWM HIGH-SIDE DRIVER (HIDRV)
RDS_HI_ON
High-side driver (HSD) turnon
resistance
VBTST – VPH = 5.5 V, I = 10mA
12
20
RDS_HI_OFF
High-side driver turnoff resistance
VBTST – VPH = 5.5 V, I = 10mA
0.65
1.3
VBTST_REFRESH
Bootstrap refresh comparator
threshold voltage
VBTST – VPH when low-side refresh
pulse is requested
4.3
4.7
3.85
Ω
Ω
V
PWM LOW-SIDE DRIVER (LODRV)
RDS_LO_ON
Low side driver (LSD) turnon
resistance
VREGN = 6 V, I = 10 mA
15
25
Ω
RDS_LO_OFF
Low side driver turnoff resistance
VREGN = 6 V, I = 10 mA
0.9
1.4
Ω
In CCM mode, 10-mΩ current-sense
resistor
64
INTERNAL SOFT-START
ISTEP
Soft-start step size
INDEPENDENT COMPARATOR
mA
(1)
VIC_REF1
Comparator reference
ChargeOption() bit [4] = 0, rising
edge (default)
0.585
0.6
0.615
V
VIC_REF2
Comparator reference
ChargeOption() bit [4] = 1, rising
edge
2.375
2.4
2.425
V
RS
Series resistor
RDOWN
Pulldown resistor
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50
kΩ
2000
kΩ
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7.6 Timing Requirements
MIN
NOM
MAX
VVCC>VUVLO, VACDET rising above 2.4 V,
ChargeOption() bit [15] = 0 (default),
(bq24707 only)
0.9
1.3
1.7
VVCC>VUVLO, VACDET rising above 2.4 V,
ChargeOption() bit [15] = 0 (default),
(bq24707A only)
0.8
1.2
2
10
50
UNIT
ACOK COMPARATOR
tACOK_FALL_DEG
ACOK falling deglitch
(specified by design)
VVCC>VUVLO, VACDET rising above 2.4 V,
ChargeOption() bit [15] = 1
s
ms
μs
PWM DRIVER
tLOW_HIGH
Driver dead time from low side to high side
20
ns
tHIGH_LOW
Driver dead time from high side to low side
20
ns
240
μs
INTERNAL SOFT-START
tSTEP
Soft-start step time
In CCM mode, 10-mΩ current-sense
resistor
SMBus
1
μs
tR
SCLK/SDATA rise time
tF
SCLK/SDATA fall time
tW(H)
SCLK pulse width high
tW(L)
SCLK pulse width low
4.7
μs
tSU(STA)
Setup time for START condition
4.7
μs
tH(STA)
START condition hold time after which first clock pulse is generated
4
μs
tSU(DAT)
Data setup time
250
ns
tH(DAT)
Data hold time
300
ns
tSU(STOP)
Setup time for STOP condition
4
µs
t(BUF)
Bus free time between START and STOP condition
4.7
FS(CL)
Clock frequency
10
100
kHz
35
ms
4
300
ns
50
μs
μs
HOST COMMUNICATION FAILURE
ttimeout
SMBus bus release time-out (1)
25
tBOOT
Deglitch for watchdog reset signal
10
tWDI
Watchdog time-out period, ChargeOption()
bit [14:13] = 01 (2)
35
44
53
s
tWDI
Watchdog time-out period, ChargeOption()
bit [14:13] = 10 (2)
70
88
105
s
tWDI
Watchdog time-out period, ChargeOption()
bit [14:13] = 11 (2) (default)
140
175
210
s
(1)
(2)
10
ms
Devices participating in a transfer time-out when any clock low exceeds the 25-ms minimum time-out period. Devices that have detected
a time-out condition must reset the communication no later than the 35-ms maximum time-out period. Both a master and a slave must
adhere to the maximum value specified as it incorporates the cumulative stretch limit for both a master (10 ms) and a slave (25 ms).
User can adjust threshold through SMBus ChargeOption() REG0x12.
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Figure 1. SMBus Communication Timing Waveforms
7.7 Typical Characteristics
Table 1. Table of Graphs
FIGURE
VCC, ACDET, REGN and ACOK Power Up (bq24707)
Figure 2
Charge Enable by ILIM
Figure 3
Current Soft-Start
Figure 4
Charge Disable by ILIM
Figure 5
Continuous Conduction Mode Switching Waveforms
Figure 6
Cycle-by-Cycle Synchronous to Nonsynchronous
Figure 7
100% Duty and Refresh Pulse
Figure 8
System Load Transient (Input DPM)
Figure 9
Battery Insertion
Figure 18
Battery-to-Ground Short Protection
Figure 10
Battery-to-Ground Short Transition
Figure 11
Efficiency vs Output Current
Figure 19
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CH1: VCC, 10 V/div; CH2: ACDET, 2 V/div; CH3: ACOK, 5 V/div;
CH4: REGN, 5 V/div, 200 ms/div
Figure 2. VCC, ACDET, REGN and ACOK Power Up
(bq24707)
CH1: PHASE, 10 V/div; CH2: Vin, 10 V/div; CH3: LODRV, 5 V/div;
CH4: inductor current, 2 A/div, 2 ms/div
Figure 4. Current Soft-Start
CH1: HIDRV, 10 V/div; CH2: LODRV, 5 V/div; CH3: PHASE,
10 V/div; CH4: inductor current, 2 A/div, 400 ns/div
Figure 6. Continuous Conduction Mode Switching
Waveforms
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CH2: ILIM, 1 V/div; CH4: inductor current, 1 A/div, 10 ms/div
Figure 3. Charge Enable by ILIM
CH2: ILIM, 1 V/div; CH4: inductor current, 1 A/div, 4 µs/div
Figure 5. Charge Disable by ILIM
CH1: HIDRV, 10 V/div; CH2: LODRV, 5 V/div; CH3: PHASE,
10 V/div; CH4: inductor current, 1 A/div, 400 ns/div
Figure 7. Cycle-by-Cycle Synchronous to Nonsynchronous
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CH1: PHASE, 10 V/div; CH2: LODRV, 5 V/div;
CH4: inductor current, 2 A/div, 4 µs/div
Figure 8. 100% Duty and Refresh Pulse
CH2: battery current, 2 A/div; CH3: adapter current, 2 A/div;
CH4: system load current, 2 A/div, 100 µs/div
Figure 9. System Load Transient (Input DPM)
CH1: PHASE, 20 V/div; CH2: LODRV, 10 V/div; CH3: battery voltage, CH1: PHASE, 20 V/div; CH2: LODRV, 10 V/div; CH3: battery voltage,
5 V/div; CH4: inductor current, 2 A/div, 2 ms/div
5 V/div; CH4: inductor current, 2 A/div, 4 µs/div
Figure 10. Battery-to-Ground Short Protection
Figure 11. Battery-to-Ground Short Transition
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8 Detailed Description
8.1 Overview
The bq24707x device is a 1- to 4-cell battery charge controller with power selection for space-constrained, multichemistry portable applications such as notebooks and detachable ultrabooks. The device supports a wide input
range of input sources from 4.5 V to 24 V, and a 1- to 4-cell battery for a versatile solution.
The bq24707x features Dynamic Power Management (DPM) to limit the input power and avoid AC adapter
overloading. During battery charging, as the system power increases, the charging current will reduce to maintain
total input current below adapter rating.
The SMBus controls input current, charge current and charge voltage registers with high-resolution, highaccuracy regulation limits.
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8.2 Functional Block Diagram
3.75V
bq24707 and bq24707A Block Diagram
UVLO
** Threshold or deglitch time is adjustable by ChargeOption()
VCC 20
EN_REGN
WAKEUP
ACDET 6
0.6V
ACGOOD
WATCHDOG
TIMER
175s **
VCC_SRN
2.4V
ACOK 5
ACOK_DRV
EN_CHRG
WATCHDOG
TIMEOUT
1.3s rising deglitch** (bq24707)
1.2ms rising deglitch** (bq24707A)
11 IFAULT
VREF_IAC
IFAULT
ACP 2
20X
ACN 1
IOUT 7
1X
Type III
Compensation
MUX
FBO
EAI
ACOK_DRV
CHARGE_INHIBIT
17 BTST
IOUT_SEL
DAC_VALID
ILIM 10
HSON
18 HIDRV
EAO
PWM
SRP 13
20X
SRN 12
19 PHASE
VREF_ICHG
RAMP
Frequency **
200mV
VFB
EN_REGN
REGN
LDO
16 REGN
ILIM
LSON
CE
105mV
15 LODRV
VREF_VREG
10uA
4mA in
BATOVP
Tj
14 GND
TSHUT
WAKEUP
155?C
Driver Logic
SRP-SRN
DAC_VALID
SMBus Interface
SDA 8
SCL 9
ChargeOption()
ChargeCurrent()
ChargeVoltage()
InputCurrent()
ManufactureID()
DeviceID()
CHG_OCP
60mV/90mV/120mV
CHARGE_INHIBIT
5mV
VREF_VREG
CHG_UCP
SRP-SRN
VREF_ICHG
VREF_IAC
1.25mV
LIGHT_LOAD
IOUT_SEL
SRP-SRN
ACP-PH
CMPOUT 3
IFAULT_HI
700mV **
CMPOUT_DRV
PH-GND
IFAULT_LO
110mV
0.6V **
50kΩ
ACP-ACN
CMPIN 4
ACOC
1.66xVREF_IAC **
ACP-ACN
2000kΩ
FAST_DPM
1.08xVREF_IAC
4.3V
REFRESH
BTST-PH
VFB
BATOVP
104%VREF_VREG
2.5V
BAT_LOWV
SRN
VCC
VCC-SRN
SRN+245mV
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8.3 Feature Description
8.3.1 Automatic Internal Soft-Start Charger Current
Every time charge is enabled, the charger automatically applies soft-start on charge current to avoid any
overshoot or stress on the output capacitors or the power converter. The charge current starts at 128 mA, and
the step size is 64 mA in CCM mode for a 10-mΩ current sensing resistor. Each step lasts around 240 µs in
CCM mode, until it reaches the programmed charge current limit. No external components are needed for this
function. During DCM mode, the soft-start current step size is larger and each step lasts for a longer time period
due to the intrinsic slow response of DCM mode.
8.3.2 High-Accuracy Current-Sense Amplifier
As an industry standard, a high-accuracy current-sense amplifier (CSA) is used to monitor the input current or
the charge current, selectable through SMBus (ChargeOption() bit[5] = 0 selects the input current, bit[5] = 1
selects the charge current) by the host. The CSA senses voltage across the sense resistor by a factor of 20
through the IOUT pin. Once VCC is above UVLO and ACDET is above 0.6 V, CSA turns on and the IOUT output
becomes valid. To lower the voltage on current monitoring, a resistor divider from IOUT to GND can be used and
accuracy over temperature can still be achieved.
A 100-pF capacitor connected on the output is recommended for decoupling high-frequency noise. An additional
RC filter is optional, if additional filtering is desired. Adding filtering also adds additional response delay.
8.3.3 Charge Timeout
The IC includes a watchdog timer to terminate charging if the charger does not receive a write ChargeVoltage()
or write ChargeCurrent() command within 175 s (adjustable through ChargeOption() command). If a watchdog
timeout occurs, all register values stay unchanged, but charge is suspended. Write ChargeVoltage() or write
ChargeCurrent() commands must be re-sent to reset the watchdog timer and resume charging. The watchdog
timer can be disabled, or set to 44 s, 88 s, or 175 s through a SMBus command (ChargeOption() bit[14:13]).
After watchdog timeout, write ChargeOption() bit[14:13] to disable the watchdog timer and also resume charging.
8.3.4 Input Overcurrent Protection (ACOC)
The IC cannot maintain the input current level if the charge current has been already reduced to zero. After the
system current continues increasing to the 1.66× of input current DAC set point (with 2.5-ms blankout time),
IFAULT is pulled to low and the charge is disabled for 1.3 s and will soft start again for charge if ACOC condition
goes away. If such failure is detected seven times in 90 seconds, charge will be latched off and an adapter
removal and system shutdown (make ACDET < 0.6 mV to reset IC) is required to start charge again. After 90
seconds, the failure counter will be reset to zero to prevent latch off.
The ACOC function can be disabled or the threshold can be set to 1.33×, 1.66× or 2.22× of input DPM current
through SMBus command (ChargeOption() bit [2:1]).
8.3.5 Charge Overcurrent Protection (CHGOCP)
The IC has a cycle-by-cycle peak overcurrent protection. It monitors the voltage across SRP and SRN, and
prevents the current from exceeding of the threshold based on the DAC charge current set point. The high-side
gate drive turns off for the rest of the cycle when the overcurrent is detected, and resumes when the next cycle
starts.
The charge OCP threshold is automatically set to 6 A, 9 A, and 12 A on a 10-mΩ current-sensing resistor based
on charge current register value. This prevents the threshold to be too high which is not safe or too low which
can be triggered in normal operation. Proper inductance should be selected to prevent OCP triggered in normal
operation due to high inductor current ripple.
8.3.6 Battery Overvoltage Protection (BATOVP)
The IC will not allow the high-side and low-side FET to turn-on when the battery voltage at SRN exceeds 104%
of the regulation voltage set-point. If BATOVP last over 30 ms, charger is completely disabled. This allows quick
response to an overvoltage condition – such as occurs when the load is removed or the battery is disconnected.
A 4-mA current sink from SRN to GND is on only during BATOVP and allows discharging the stored output
inductor energy that is transferred to the output capacitors.
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Feature Description (continued)
Some battery pack gas gauges will set the ChargeVoltage() and ChargeCurrent() registers to 0 V and 0 A after
the battery pack is fully charged. If the ChargeVoltage() register is set to 0 V, the bq24707 triggers BATOVP, and
the 4-mA current discharges the battery pack. The recommendation for bq24707 is to set the ChargeVoltage()
register to full scale charge voltage (12.592 V for 3-S battery for example) after the battery is fully charged. The
bq24707A will not trigger BATOVP, and there is no 4-mA current to discharge the battery pack if the
ChargeVoltage() register is set 0 V. The recommendation for bq24707A is to set the ChargeVoltage() register to
0 V after the battery is fully charged.
8.3.7 Battery Shorted to Ground (BATLOWV)
The IC will disable charge for 1 ms if the battery voltage on SRN falls below 2.5 V. After 1-ms reset, the charge
is resumed with soft-start if all the enable conditions in the Enable and Disable Charging sections are satisfied.
This prevents any overshoot current in inductor which can saturate inductor and may damage the MOSFET. The
charge current is limited to 0.5 A on 10-mΩ current sensing resistor when BATLOWV condition persists and
LSFET keeps off. The LSFET turns on only for refreshing pulse to charge BTST capacitor.
8.3.8 Thermal Shutdown Protection (TSHUT)
The QFN package has low thermal impedance, which provides good thermal conduction from the silicon to the
ambient, to keep junctions temperatures low. As added level of protection, the charger converter turns off for selfprotection whenever the junction temperature exceeds the 155°C. The charger stays off until the junction
temperature falls below 135°C. During thermal shutdown, the REGN LDO current limit is reduced to 16 mA.
Once the temperature falls below 135°C, charge can be resumed with soft-start.
8.4 Device Functional Modes
8.4.1 Enable and Disable Charging
In Charge mode, the following conditions have to be valid to start charge:
• Charge is enabled through SMBus (ChargeOption() bit [0] = 0, default is 0, charge enabled).
• ILIM pin voltage higher than 105 mV.
• All three regulation limit DACs have a valid value programmed.
• ACOK is valid (see Adapter Detect and ACOK Output for details).
• VSRN does not exceed BATOVP threshold.
• IC temperature does not exceed TSHUT threshold.
• Not in ACOC condition (see Input Overcurrent Protection (ACOC) for details).
One of the following conditions stops ongoing charging:
• Charge is inhibited through SMBus (ChargeOption() bit[0] = 1).
• ILIM pin voltage lower than 75 mV.
• One of three regulation limit DACs is set to 0 or out of range.
• ACOK is pulled high (see Adapter Detect and ACOK Output for details).
• VSRN exceeds BATOVP threshold.
• TSHUT IC temperature threshold is reached.
• ACOC is detected (see Input Overcurrent Protection (ACOC) for details).
• Short-circuit is detected (see Inductor Short, MOSFET Short Protection for details).
• Watchdog timer expires if watchdog timer is enabled (see Charge Timeout for details).
8.4.2 Continuous Conduction Mode (CCM)
With sufficient charge current the IC inductor current never crosses zero, which is defined as continuous
conduction mode. The controller starts a new cycle with ramp coming up from 200 mV. As long as EAO voltage
is above the ramp voltage, the high-side MOSFET (HSFET) stays on. When the ramp voltage exceeds EAO
voltage, the HSFET turns off and the low-side MOSFET (LSFET) turns on. At the end of the cycle, the ramp gets
reset and the LSFET turns off, ready for the next cycle. There is always break-before-make logic during the
transition to prevent cross-conduction and shoot-through. During the dead time when both MOSFETs are off, the
body-diode of the low-side power MOSFET conducts the inductor current.
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Device Functional Modes (continued)
During CCM mode, the inductor current is always flowing and creates a fixed two-pole system. Having the
LSFET turn on keeps the power dissipation low and allows safely charging at high currents.
8.4.3 Discontinuous Conduction Mode (DCM)
During the HSFET off time when LSFET is on, the inductor current decreases. If the current goes to zero, the
converter enters Discontinuous Conduction Mode. Every cycle, when the voltage across SRP and SRN falls
below 5 mV (0.5 A on 10 mΩ), the undercurrent protection comparator (UCP) turns off LSFET to avoid negative
inductor current, which may boost the system through the body diode of HSFET.
During the DCM mode the loop response automatically changes. It changes to a single pole system and the pole
is proportional to the load current.
Both CCM and DCM are synchronous operation with LSFET turnon every clock cycle. If the average charge
current goes below 125 mA on a 10-mΩ current-sensing resistor or the battery voltage falls below 2.5 V, the
LSFET keeps turnoff. The battery charger operates in nonsynchronous mode and the current flows through the
LSFET body diode. During nonsynchronous operation, the LSFET turns on only for refreshing pulse to charge
BTST capacitor. If the average charge current goes above 250 mA on a 10-mΩ current sensing resistor, the
LSFET exits nonsynchronous mode and enters synchronous mode to reduce LSFET power loss.
8.5 Programming
8.5.1 SMBus Interface
The IC operates as a slave, receiving control inputs from the embedded controller host through the SMBus
interface. The IC uses a simplified subset of the commands documented in System Management Bus
Specification V1.1, which can be downloaded from www.smbus.org. The IC uses the SMBus Read-Word and
Write-Word protocols (see Figure 12) to communicate with the smart battery. The IC performs only as a SMBus
slave device with address 0b00010010 (0x12H) and does not initiate communication on the bus. In addition, the
IC has two identification registers a 16-bit device ID register (0xFFH) and a 16-bit manufacturer ID register
(0xFEH).
SMBus communication is enabled with the following conditions:
• VVCC is above UVLO.
• VACDET is above 0.6 V.
The data (SDA) and clock (SCL) pins have Schmitt-trigger inputs that can accommodate slow edges. Choose
pullup resistors (10 kΩ) for SDA and SCL to achieve rise times according to the SMBus specifications.
Communication starts when the master signals a START condition, which is a high-to-low transition on SDA,
while SCL is high. When the master has finished communicating, the master issues a STOP condition, which is a
low-to-high transition on SDA, while SCL is high. The bus is then free for another transmission. Figure 13 and
Figure 14 show the timing diagrams for signals on the SMBus interface. The address byte, command byte, and
data bytes are transmitted between the START and STOP conditions. The SDA state changes only while SCL is
low, except for the START and STOP conditions. Data is transmitted in 8-bit bytes and is sampled on the rising
edge of SCL. Nine clock cycles are required to transfer each byte in or out of the IC because either the master or
the slave acknowledges the receipt of the correct byte during the ninth clock cycle. The IC supports the charger
commands as described in Table 2.
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Programming (continued)
a) Write-Word Format
S
COMMAND
BYTE
ACK
1b
8 BITS
0
MSB LSB
SLAVE
ADDRESS
W
ACK
7 BITS
1b
MSB LSB
0
Preset to 0b0001001
HIGH DATA
BYTE
ACK
1b
8 BITS
1b
0
MSB LSB
0
LOW DATA
BYTE
ACK
1b
8 BITS
0
MSB LSB
ChargeCurrent() = 0x14H D7
ChargeVoltage() = 0x15H
InputCurrent() = 0x3FH
ChargeOption() = 0x12H
D0
D15
P
D8
b) Read-Word Format
S
SLAVE
ADDRESS
W
ACK
7 BITS
1b
1b
8 BITS
1b
MSB LSB
0
0
MSB LSB
0
COMMAND
BYTE
ACK
S
SLAVE
ADDRESS
R
ACK
7 BITS
1b
1b
1
0
MSB
LSB
LOW DATA
BYTE
ACK
8 BITS
MSB
HIGH DATA
BYTE
NACK
8 BITS
1b
1b
0
LSB
MSB
P
1
LSB
Preset to 0b0001001
DeviceID() = 0xFFH
Preset to
D7 D0
D15 D8
ManufactureID() = 0xFEH
0b0001001
ChargeCurrent() = 0x14H
ChargeVoltage() = 0x15H
InputCurrent() = 0x3FH
ChargeOption() = 0x12H
LEGEND:
S = START CONDITION OR REPEATED START CONDITION
P = STOP CONDITION
ACK = ACKNOWLEDGE (LOGIC-LOW)
NACK = NOT ACKNOWLEDGE (LOGIC-HIGH)
W = WRITE BIT (LOGIC-LOW)
R = READ BIT (LOGIC-HIGH)
MASTER TO SLAVE
SLAVE TO MASTER
Figure 12. SMBus Write-Word and Read-Word Protocols
Figure 13. SMBus Write Timing
A
B
tLOW
C
D
E
F
G
H
I
J
K
t HIGH
A = START CONDITION
E = SLAVE PULLS SMBDATA LINE LOW
B = MSB OF ADDRESS CLOCKED INTO SLAVE
F = ACKNOWLEDGE BIT CLOCKED INTO MASTER
I = ACKNOWLEDGE CLOCK PULSE
J = STOP CONDITION
C = LSB OF ADDRESS CLOCKED INTO SLA VE
G = MSB OF DATA CLOCKED INTO MASTER
K = NEW START CONDITION
D = R/W BIT CLOCKED INTO SLAVE
H = LSB OF DATA CLOCKED INTO MASTER
Figure 14. SMBus Read Timing
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Programming (continued)
8.5.2 Battery-Charger Commands
The IC supports six battery-charger commands that use either Write-Word or Read-Word protocols, as
summarized in Table 2. ManufacturerID() and DeviceID() can be used to identify the IC. The ManufacturerID()
command always returns 0x0040H and the DeviceID() command always returns 0x000AH.
Table 2. Battery Charger Command Summary
REGISTER ADDRESS
REGISTER NAME
READ/WRITE
DESCRIPTION
POR STATE
0x12H
ChargeOption()
Read or Write
Charger Options Control
0x7904H
0x14H
ChargeCurrent()
Read or Write
7-Bit Charge Current Setting
0x0000H
0x15H
ChargeVoltage()
Read or Write
11-Bit Charge Voltage Setting
0x0000H
0x3FH
InputCurrent()
Read or Write
6-Bit Input Current Setting
0x1000H
0XFEH
ManufacturerID()
Read Only
Manufacturer ID
0x0040H
0xFFH
DeviceID()
Read Only
Device ID
0x000AH
8.5.3 Setting Charger Options
By writing ChargeOption() command (0x12H or 0b00010010), the IC allows users to change several charger
options after POR (Power On Reset) as shown in Table 3.
Table 3. Charge Options Register (0x12h)
BIT
BIT NAME
[15]
DESCRIPTION
ACOK Deglitch Time Adjust ACOK deglitch time.
Adjust
0: ACOK deglitch time 1.3 s for bq24707, 1.2 ms for bq24707A <default at POR>
1: ACOK deglitch time set to minimum (<50 µs).
To change this option, VCC pin voltage must be above UVLO and ACDET pin voltage must be above 0.6
V to enable IC SMBus communication and set this bit to 1 to disable the ACOK deglitch timer. After POR
the bit default value is 0 and ACOK deglitch time is 1.3 s for bq24707 and 1.2 ms for bq24707A.
[14:13]
WATCHDOG Timer
Adjust
Set maximum delay between consecutive SMBus Write charge voltage or charge current command. The
charge is suspended if the IC does not receive write charge voltage or write charge current command
within the watchdog time period and watchdog timer is enabled.
The charge is resumed after receive write charge voltage or write charge current command when
watchdog timer expires and charge suspends.
00: Disable Watchdog Timer
01: Enabled, 44 s
10: Enabled, 88 s
11: Enable Watchdog Timer (175 s) <default at POR>
[12:11]
Not In Use
11 at POR
[10]
EMI Switching
Frequency Adjust
0: Reduce PWM switching frequency by 18% <default at POR>
1: Increase PWM switching frequency by 18%
[9]
EMI Switching
Frequency Enable
0: Disable adjust PWM switching frequency <default at POR>
1: Enable adjust PWM switching frequency
IFAULT_HI
Comparator
Threshold Adjust
Short-circuit protection high-side MOSFET voltage drop comparator threshold.
00: 300 mV
01: 500 mV
10: 700 mV <default at POR>
11: 900 mV
[6]
Not In Use
0 at POR
[5]
IOUT Selection
0: IOUT is the 20× adapter current amplifier output <default at POR>
1: IOUT is the 20× charge current amplifier output
[4]
Comparator
Threshold Adjust
0: 0.6 V <default at POR>
1: 2.4 V
[3]
Not In Use
0 at POR
[8:7]
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Table 3. Charge Options Register (0x12h) (continued)
BIT
[2:1]
[0]
BIT NAME
DESCRIPTION
ACOC Threshold
Adjust
00: Disable ACOC
01: 1.33× of input current regulation limit
10: 1.66× of input current regulation limit <default at POR>
11: 2.22× of input current regulation limit
Charge Inhibit
0: Enable Charge <default at POR>
1: Inhibit Charge
8.5.4 Setting the Charge Current
To set the charge current, write a 16-bit ChargeCurrent() command (0x14H or 0b00010100) using the data
format listed in Table 4. With a 10-mΩ sense resistor, the IC provides a charge current range of 128 mA to 8.128
A, with 64-mA step resolution. Sending ChargeCurrent() below 128 mA or above 8.128 A clears the register and
terminates charging. Upon POR, charge current is 0 A. A 0.1-µF capacitor between SRP and SRN for differential
mode filtering, a 0.1-µF capacitor between SRN and ground for common-mode filtering, and an optional 0.1-µF
capacitor between SRP and ground for common-mode filtering is recommended. Meanwhile, the capacitance on
SRP should not be higher than 0.1 µF to properly sense the voltage across SRP and SRN for cycle-by-cycle
undercurrent and overcurrent detection.
The SRP and SRN pins are used to sense RSR with a default value of 10 mΩ. However, resistors of other values
can also be used. With a larger sense resistor comes a larger sense voltage and higher regulation accuracy, but
at the expense of higher conduction loss. If the current sensing resistor value is too high, it may trigger
overcurrent protection threshold due to the current ripple voltage being too high. In such a case, either a higher
inductance value or a lower current-sensing resistor value should be used to limit the current ripple voltage level.
TI recommends a current-sensing resistor value of no more than 20 mΩ
To provide secondary protection, the IC has an ILIM pin with which the user can program the maximum allowed
charge current. Internal charge current limit is the lower one between the voltage set by ChargeCurrent(), and
voltage on the ILIM pin. To disable this function, the user can pull ILIM above 1.6 V, which is the maximum
charge current regulation limit. The following equation shows the voltage should add on the ILIM pin with respect
to the preferred charge current limit:
VILIM = 20 × (VSRP - VSRN ) = 20 ´ ICHG ´ RSR
(1)
Table 4. Charge Current Register (0x14h), Using 10-mΩ Sense Resistor
BIT
BIT NAME
DESCRIPTION
0
Not used.
1
Not used.
2
Not used.
3
Not used.
4
Not used.
5
Not used.
6
Charge Current, DACICHG 0
0 = Adds 0 mA of charger current.
1 = Adds 64 mA of charger current.
7
Charge Current, DACICHG 1
0 = Adds 0 mA of charger current.
1 = Adds 128 mA of charger current.
8
Charge Current, DACICHG 2
0 = Adds 0 mA of charger current.
1 = Adds 256 mA of charger current.
9
Charge Current, DACICHG 3
0 = Adds 0 mA of charger current.
1 = Adds 512 mA of charger current.
10
Charge Current, DACICHG 4
0 = Adds 0 mA of charger current.
1 = Adds 1024 mA of charger current.
11
Charge Current, DACICHG 5
0 = Adds 0 mA of charger current.
1 = Adds 2048 mA of charger current.
12
Charge Current, DACICHG 6
0 = Adds 0 mA of charger current.
1 = Adds 4096 mA of charger current.
13
Not used.
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Table 4. Charge Current Register (0x14h), Using 10-mΩ Sense
Resistor (continued)
BIT
BIT NAME
DESCRIPTION
14
Not used.
15
Not used.
8.5.5 Setting the Charge Voltage
To set the output charge regulation voltage, write a 16bit ChargeVoltage() command (0x15H or 0b00010101)
using the data format listed inTable 5. The IC provides a charge voltage range from 1.024 V to 19.200 V, with a
16-mV step resolution. Sending ChargeVoltage() below 1.024 V or above 19.2 V clears the register and
terminates charging. Upon POR, the charge voltage limit is 0 V.
The SRN pin is used to sense the battery voltage for voltage regulation and should be connected as close to the
battery as possible, and directly place a decoupling capacitor (0.1 µF recommended) as close to the IC as
possible to decouple high frequency noise.
Table 5. Charge Voltage Register (0x15h)
BIT
BIT NAME
DESCRIPTION
0
Not used.
1
Not used.
2
Not used.
3
Not used.
4
Charge Voltage, DACV 0
0 = Adds 0 mV of charger voltage.
1 = Adds 16 mV of charger voltage.
5
Charge Voltage, DACV 1
0 = Adds 0 mV of charger voltage.
1 = Adds 32 mV of charger voltage.
6
Charge Voltage, DACV 2
0 = Adds 0 mV of charger voltage.
1 = Adds 64 mV of charger voltage.
7
Charge Voltage, DACV 3
0 = Adds 0 mV of charger voltage.
1 = Adds 128 mV of charger voltage.
8
Charge Voltage, DACV 4
0 = Adds 0 mV of charger voltage.
1 = Adds 256 mV of charger voltage.
9
Charge Voltage, DACV 5
0 = Adds 0 mV of charger voltage.
1 = Adds 512 mV of charger voltage.
10
Charge Voltage, DACV 6
0 = Adds 0 mV of charger voltage.
1 = Adds 1024 mV of charger voltage.
11
Charge Voltage, DACV 7
0 = Adds 0 mV of charger voltage.
1 = Adds 2048 mV of charger voltage.
12
Charge Voltage, DACV 8
0 = Adds 0 mV of charger voltage.
1 = Adds 4096 mV of charger voltage.
13
Charge Voltage, DACV 9
0 = Adds 0 mV of charger voltage.
1 = Adds 8192 mV of charger voltage.
14
Charge Voltage, DACV 10
0 = Adds 0 mV of charger voltage.
1 = Adds 16384 mV of charger voltage.
15
Not used.
8.5.6 Setting Input Current
System current normally fluctuates as portions of the system are powered up or put to sleep. With the input
current limit, the output current requirement of the AC wall adapter can be lowered, reducing system cost.
The total input current, from a wall cube or other DC source, is the sum of the system supply current and the
current required by the charger. When the input current exceeds the set input current limit, the IC decreases the
charge current to provide priority to system load current. As the system current rises, the available charge current
drops linearly to zero. Thereafter, all input current goes to system load and input current increases.
During DPM regulation, the total input current is the sum of the device supply current IBIAS, the charger input
current, and the system load current ILOAD, and can be estimated as follows:
22
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éI
´ VBATTERY ù
IINPUT = ILOAD + ê BATTERY
ú + IBIAS
V
IN ´ η
ë
û
where
•
η is the efficiency of the charger buck converter (typically 85% to 95%).
(2)
To set the input current limit, write a 16-bit InputCurrent() command (0x3FH or 0b00111111) using the data
format listed in Table 6. When using a 10-mΩ sense resistor, the IC provides an input-current limit range of 128
mA to 8.064 A, with 128-mA resolution. An input current limit set to no less than 512 mA is suggested. Sending
InputCurrent() below 128 mA or above 8.064 A clears the register and terminates charging. Upon POR, the
default input current limit is 4096 mA.
The ACP and ACN pins are used to sense RAC with a default value of 10 mΩ. However, resistors of other values
can also be used. With a larger sense resistor, comes a larger sense voltage, and a higher regulation accuracy;
but, at the expense of higher conduction loss.
Instead of using the internal DPM loop, the user can build up an external input current regulation loop and have
the feedback signal on ILIM. To disable the internal DPM loop, set the input current limit register value to a
maximum 8.064 A or a value much higher than the external DPM set point.
If input current rises above 108% of the input current limit set point, the charger shuts down immediately to let
the input current fall fast. After stopping charge, the charger soft restarts to charge the battery if the adapter still
has power left to charge the battery. This prevents overloading the adapter to crash when system has a high and
fast loading transient. The wait time between shutdown and restart charging is a natural response time of the
input current limit loop.
Table 6. Input Current Register (0x3fh), Using 10-mΩ Sense Resistor
BIT
BIT NAME
DESCRIPTION
0
Not used.
1
Not used.
2
Not used.
3
Not used.
4
Not used.
5
Not used.
6
Not used.
7
Input Current, DACIIN 0
0 = Adds 0 mA of input current.
1 = Adds 128 mA of input current.
8
Input Current, DACIIN 1
0 = Adds 0 mA of input current.
1 = Adds 256 mA of input current.
9
Input Current, DACIIN 2
0 = Adds 0 mA of input current.
1 = Adds 512 mA of input current.
10
Input Current, DACIIN 3
0 = Adds 0 mA of input current.
1 = Adds 1024 mA of input current.
11
Input Current, DACIIN 4
0 = Adds 0 mA of input current.
1 = Adds 2048 mA of input current.
12
Input Current, DACIIN 5
0 = Adds 0 mA of input current.
1 = Adds 4096 mA of input current.
13
Not used.
14
Not used.
15
Not used.
8.5.7 Adapter Detect and ACOK Output
The IC uses an ACOK comparator to determine the source of power on the VCC pin, either from the battery or
adapter. An external resistor voltage divider attenuates the adapter voltage before it goes to ACDET. The
adapter detect threshold should typically be programmed to a value greater than the maximum battery voltage
but lower than the maximum allowed adapter voltage.
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The open-drain ACOK output requires an external pullup resistor to the system digital rail for a high level. It can
be pulled to ground under the following conditions:
• VVCC > UVLO.
• 2.4 V < VACDET (not in low input voltage condition).
• VVCC–VSRN > 245 mV (not in sleep mode).
The default delay is 1.3 s for bq24707 and 1.2 ms for bq24707A after ACDET has valid voltage to make ACOK
pull low. The delay can be reduced by a SMBus command (ChargeOption() bit[15] = 0 ACOK delay 1.3 s for
bq24707 and 1.2 ms for bq24707A, bit[15] = 1 ACOK no delay). To change this option, the VCC pin voltage must
be above UVLO and the ACDET pin voltage must be above 0.6 V to enable IC SMBus communication and set
ChargeOption() bit[15] to 1 to disable the ACOK deglitch timer.
8.5.8 Converter Operation
The synchronous buck PWM converter uses a fixed-frequency voltage mode control scheme and internal type III
compensation network. The LC output filter generates the following characteristic resonant frequency:
1
¦o =
2p Lo Co
(3)
The resonant frequency fo is used to determine the compensation to ensure there is sufficient phase margin and
gain margin for the target bandwidth. The LC output filter should be selected to generate a resonant frequency of
10–20 kHz nominal for the best performance. The suggested component values per charge current with a 750kHz default switching frequency is shown in Table 7.
Ceramic capacitors show a DC-bias effect. This effect reduces the effective capacitance when a DC-bias voltage
is applied across a ceramic capacitor, as on the output capacitor of a charger. The effect may lead to a
significant capacitance drop, especially for high output voltages and small capacitor packages. See the
manufacturer's data sheet about the performance with a DC-bias voltage applied. It may be necessary to choose
a higher voltage rating or nominal capacitance value to get the required value at the operating point.
Table 7. Suggested Component Values per Charge Current With a Default 750kHz Switching Frequency
CHARGE CURRENT
2A
3A
4A
6A
8A
Output inductor Lo (µH)
6.8 or 8.2
5.6 or 6.8
3.3 or 4.7
3.3
2.2
Output capacitor Co (µF)
20
20
20
30
40
Sense resistor (mΩ)
10
10
10
10
10
The IC has three loops of regulation: input current, charge current, and charge voltage. The three loops are
brought together internally at the error amplifier. The maximum voltage of the three loops appears at the output
of the error amplifier EAO (see ). An internal saw-tooth ramp is compared to the internal error control signal EAO
to vary the duty-cycle of the converter. The ramp has an offset of 200 mV to allow 0% duty-cycle.
When the battery charge voltage approaches the input voltage, the EAO signal is allowed to exceed the sawtooth ramp peak to get a 100% duty-cycle. If voltage across the BTST and PHASE pins falls below 4.3 V, a
refresh cycle starts and the low-side N-channel power MOSFET is turned on to recharge the BTST capacitor. It
can achieve a duty-cycle of up to 99.5%.
8.5.9 EMI Switching Frequency Adjust
The charger switching frequency can be adjusted ±18% to solve EMI issue through SMBus command.
ChargeOption() bit [9]=0 disable the frequency adjust function. To enable frequency adjust function, set
ChargeOption() bit[9]=1. Set ChargeOption() bit [10]=0 to reduce switching frequency, set bit[10]=1 to increase
switching frequency.
If frequency is reduced, for a fixed inductor the current ripple is increased. Inductor value must be carefully
selected so that it will not trigger cycle-by-cycle peak overcurrent protection even for the worst condition such as
higher input voltage, 50% duty cycle, lower inductance and lower switching frequency.
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8.5.10 Inductor Short, MOSFET Short Protection
The IC has a unique short-circuit protection feature. The cycle-by-cycle current monitoring feature of the IC is
achieved through monitoring the voltage drop across RDS(on) of the MOSFETs after a certain amount of blanking
time. In case of MOSFET short or inductor short circuit, the overcurrent condition is sensed by two comparators
and two counters will be triggered. After seven times of short circuit events, the charger will be latched off. To
reset the charger from latch-off status, the IC VCC pin must be pulled down below UVLO or ACDET pin must be
pulled down below 0.6 V. This can be achieved by removing the adapter and shut down the operation system.
The low-side MOSFET short circuit voltage drop threshold is fixed to typical 110 mV. The high-side MOSFET
short-circuit voltage drop threshold can be adjusted through SMBus command. ChargeOption() bit[8:7] = 00, 01,
10, 11 set the threshold 300 mV, 500 mV, 700 mV, and 900 mV, respectively.
Due to the certain amount of blanking time to prevent noise when MOSFET just turns on, the cycle-by-cycle
charge overcurrent protection may detect high current and turn off MOSFET first before the short-circuit
protection circuit can detect short condition because the blanking time has not finished. In such a case, the
charge may not be able to detect shorts circuit and counter may not be able to count to seven then latch off.
Instead, the charge may continuously keep switching with very narrow duty cycle to limit the cycle-by-cycle
current peak value. However, the charger should still be safe and will not cause failure because the duty cycle is
limited to a very short of time and MOSFET should be still inside the safety operation area. During a soft-start
period, it may take a long time instead of just seven switching cycles to detect short circuit based on the same
blanking time reason.
8.5.11 Independent Comparator
The IC has an independent comparator can be used to compare input current, charge current, or battery voltage
with internal reference . Program CMPIN voltage by connecting a resistor-divider from IOUT pin to CMPIN pin to
GND pin for adapter or charge current comparison or from SRN pin to CMPIN pin to GND pin for battery voltage
comparison. When CMPIN is above internal reference, CMPOUT is pulled to external pullup rail by external
pullup resistor. When CMPIN is below internal reference, CMPOUT is pulled to GND by internal MOSFET. Place
a resistor between CMPIN and CMPOUT to program hysteresis. The internal reference can be set to 0.6 V or 2.4
V through SMBus command (ChargeOption() bit[4]=0 set internal reference 0.6 V, bit[4]=1 set 2.4 V).
There is one 50-kΩ series resistor RS and one 2000-kΩ pulldown resistor RDOWN for CMPIN pin as shown in
Figure 15. To get the accurate comparison set point, these two resistors must be included in the calculation. A
spreadsheet calculation tool has been developed to simplify the design work. User can download from the TI
Web site at www.ti.com under the IC product folder.
Figure 15 also shows one application circuit using this comparator for battery voltage comparison. After using the
superposition principle and fill the components value into the spreadsheet the battery voltage threshold is 9.45 V
for rising edge and 8.99 V for falling edge.
3.3V
RS
50kΩ
RHYS
3010kΩ
VBAT
CMPIN
CMPOUT
RDOWN
2000kΩ
RTOP
422kΩ
RBOT
30.1kΩ
0.6V/2.4V
RUP
10kΩ
CMPIN
RS
50kΩ
CMPOUT
RDOWN
2000kΩ
0.6V
(a) Internal Circuit showing the series resistor and
pull down resistor
(b) Application Circuit, 9.45V rising edge and 8.99V falling edge
for 3cell battery
Figure 15. IC Comparator Internal Circuit and Application Circuit
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The bq24707x is a high-efficiency, synchronous, NVDC-1 battery charge controller, offering low component count
for space-constrained, multi-chemistry battery charging applications. The bq24707EVM-558 evaluation module
(EVM) is a complete charger module for evaluating the bq24707. The application curves were taken using the
bq24707AEVM-558. Refer to the EVM user's guide (SLUU445) for EVM information.
9.2 Typical Application
Q1 (RBFET)
Si4435DDY
Adapter +
Ri
2?
Ci
2.2µF
Adapter -
Q2 (ACFET)
Si4435DDY
RAC 10m?
SYSTEM
C1
0.1µF
Controlled
By Host
D2
RB751V40
+1.5V
If no adapter,
and Iout is
needed, this
rail is on
C5
1µF
ACN
C2
0.1µF
VCC
C6
1µF
ACDET
R2
66.5k
R8
100k
REGN
ILIM
BTST
R7
316k
+3.3V
R3
10k
R4
10k
R5
10k
R6
10k
R10
10k
D1
BAT54
HIDRV
SDA
SMBus
Q5 (BATFET)
Si4435DDY
Controlled
By Host
ACP
R1
430k
HOST
Total
Csys
220µF
R9
10Ω
C3
0.1µF
SCL
U1
bq24707
bq24707A
C7
0.047µF
C8
10uF
Q3
Sis412DN
C9
10uF
RSR
10m?
Pack +
PHASE
L1
4.7µH
Q4
Sis412DN
LODRV
C10
10µF
C11
10µF
ACOK
Pack -
GND
Dig I/O
IFAULT
SRP
CMPOUT
R12
100k
R11
39.2k
R13
3.01M
ADC
R14
10Ω
*
R15
7.5Ω
*
C13
0.1µF
SRN
CMPIN
C14
0.1µF
IOUT
C4
100p
PowerPad
Fs = 750 kHz, Iadpt = 4.096 A, Ichrg = 2.944 A, Ilim = 4 A, Vchrg = 12.592 V, 90-W adapter and 3S2P battery pack
See Negative Output Voltage Protection about negative output voltage protection for hard shorts on battery-to-ground
or battery-reverse connection.
Figure 16. Typical System Schematic
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Typical Application (continued)
9.2.1 Design Requirements
For this design example, use the parameters listed in Table 8 as the input parameters.
Table 8. Design Parameters
DESIGN PARAMETER
Input Voltage
(1)
Input Current Limit
(1)
(2)
EXAMPLE VALUE
17.7 V < Adapter Voltage < 24 V
(1)
3.2 A for 65-W adapter
Battery Charge Voltage (2)
12592 mV for 3-s battery
Battery Charge Current (2)
4096 mA for 3-s battery
Battery Discharge Current (2)
6144 mA for 3-s battery
Refer to battery specification for settings.
Refer to adapter specification for settings for Input Voltage and Input
Current Limit.
9.2.2 Detailed Design Procedure
9.2.2.1 Negative Output Voltage Protection
Reversely insert the battery pack into the charger output during production or hard shorts on battery-to-ground
will generate negative output voltage on SRP and SRN pin. IC internal electrostatic-discharge (ESD) diodes from
GND pin to SRP or SRN pins and two anti-parallel (AP) diodes between SRP and SRN pins can be forward
biased and negative current can pass through the ESD diodes and AP diodes when output has negative voltage.
Insert two small resistors for SRP and SRN pins to limit the negative current level when output has negative
voltage. Suggest resistor value is 10 Ω for SRP pin and 7 Ω to 8 Ω for SRN pin. After adding small resistors, the
suggested precharge current is at least 192 mA for a 10-mΩ current sensing resistor.
9.2.2.2 Inductor Selection
The IC has three selectable fixed switching frequencies. Higher switching frequency allows the use of smaller
inductor and capacitor values. Inductor saturation current should be higher than the charging current (ICHG) plus
half the ripple current (IRIPPLE):
ISAT ³ ICHG + (1/2) IRIPPLE
(4)
The inductor ripple current depends on input voltage (VIN), duty cycle (D = VOUT/VIN), switching frequency (fS),
and inductance (L):
V ´ D ´ (1 - D)
IRIPPLE = IN
fS ´ L
(5)
The maximum inductor ripple current happens with D = 0.5 or close to 0.5. For example, the battery charging
voltage range is from 9 V to 12.6 V for 3-cell battery pack. For 20-V adapter voltage, 10-V battery voltage gives
the maximum inductor ripple current. Another example is 4-cell battery, the battery voltage range is from 12 V to
16.8 V, and 12-V battery voltage gives the maximum inductor ripple current.
Usually inductor ripple is designed in the range of (20-40%) maximum charging current as a trade-off between
inductor size and efficiency for a practical design.
The IC has charge undercurrent protection (UCP) by monitoring charging current-sensing resistor cycle-by-cycle.
The typical cycle-by-cycle UCP threshold is 5-mV falling edge corresponding to 0.5-A falling edge for a 10-mΩ
charging current-sensing resistor. When the average charging current is less than 125 mA for a 10-mΩ charging
current-sensing resistor, the low-side MOSFET is off until BTST capacitor voltage needs to refresh charge. As a
result, the converter relies on low-side MOSFET body diode for the inductor freewheeling current.
9.2.2.3 Input Capacitor
Input capacitor should have enough ripple current rating to absorb input switching ripple current. The worst case
RMS ripple current is half of the charging current when duty cycle is 0.5. If the converter does not operate at
50% duty cycle, then the worst case capacitor RMS current occurs where the duty cycle is closest to 50% and
can be estimated by Equation 6:
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ICIN = ICHG ´
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D × (1 - D)
(6)
Low ESR ceramic capacitor such as X7R or X5R is preferred for input decoupling capacitor and should be
placed to the drain of the high-side MOSFET and source of the low-side MOSFET as close as possible. Voltage
rating of the capacitor must be higher than normal input voltage level. 25-V rating or higher capacitor is preferred
for 19- to 20-V input voltage. 10- to 20-μF capacitance is suggested for typical of 3- to 4-A charging current.
Ceramic capacitors show a DC-bias effect. This effect reduces the effective capacitance when a DC-bias voltage
is applied across a ceramic capacitor, as on the input capacitor of a charger. The effect may lead to a significant
capacitance drop, especially for high input voltages and small capacitor packages. See the manufacturer's data
sheet about the performance with a DC bias voltage applied. It may be necessary to choose a higher voltage
rating or nominal capacitance value to get the required value at the operating point.
9.2.2.4 Output Capacitor
Output capacitor also should have enough ripple current rating to absorb output switching ripple current. The
output capacitor RMS current is given:
I
ICOUT = RIPPLE » 0.29 ´ IRIPPLE
2 ´ 3
(7)
The IC has internal loop compensator. To get good loop stability, the resonant frequency of the output inductor
and output capacitor should be designed from 10 kHz to 20 kHz. The preferred ceramic capacitor is 25-V X7R or
X5R for output capacitor. 10- to 20-μF capacitance is suggested for typical of 3- to 4-A charging current. Place
capacitors after charging current-sensing resistor to get the best charge current regulation accuracy.
Ceramic capacitors show a DC-bias effect. This effect reduces the effective capacitance when a DC-bias voltage
is applied across a ceramic capacitor, as on the output capacitor of a charger. The effect may lead to a
significant capacitance drop, especially for high output voltages and small capacitor packages. See the
manufacturer's data sheet about the performance with a DC-bias voltage applied. It may be necessary to choose
a higher voltage rating or nominal capacitance value to get the required value at the operating point.
9.2.2.5 Power MOSFETs Selection
Two external N-channel MOSFETs are used for a synchronous switching battery charger. The gate drivers are
internally integrated into the IC with 6 V of gate drive voltage. 30-V or higher voltage rating MOSFETs are
preferred for 19- to 20-V input voltage.
Figure-of-merit (FOM) is usually used for selecting proper MOSFET based on a tradeoff between the conduction
loss and switching loss. For top-side MOSFET, FOM is defined as the product of the ON-resistance of the
MOSFET, RDS(ON), and the gate-to-drain charge, QGD. For bottom-side MOSFET, FOM is defined as the product
of the ON-resistance of the MOSFET, RDS(ON), and the total gate charge, QG.
FOMtop = RDS(on) x QGD; FOMbottom = RDS(on) x QG
(8)
The lower the FOM value, the lower the total power loss. Usually lower RDS(ON) has higher cost with the same
package size.
The top-side MOSFET loss includes conduction loss and switching loss. The loss is a function of duty cycle
(D=VOUT/VIN), charging current (ICHG), MOSFET's ON-resistance ®DS(ON)), input voltage (VIN), switching frequency
(fS), turnon time (ton), and turnoff time (toff):
1
Ptop = D ´ ICHG2 ´ RDS(on) +
´ VIN ´ ICHG ´ (t on + t off ) ´ f s
2
(9)
The first item represents the conduction loss. Usually MOSFET RDS(ON) increases by 50% with 100°C junction
temperature rise. The second term represents the switching loss. The MOSFET turnon and turnoff times are
given by:
Q
Q
t on = SW , t off = SW
Ion
Ioff
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where
•
•
•
Qsw is the switching charge.
Ion is the turnon gate driving current.
Ioff is the turnoff gate driving current.
(10)
If the switching charge is not given in MOSFET data sheet, it can be estimated by gate-to-drain charge (QGD)
and gate-to-source charge (QGS):
1
QSW = QGD +
´ QGS
2
(11)
Gate driving current can be estimated by REGN voltage (VREGN), MOSFET plateau voltage (Vplt), total turnon
gate resistance (Ron) and turnoff gate resistance (Roff) of the gate driver:
VREGN - Vplt
Vplt
Ion =
, Ioff =
Ron
Roff
(12)
The conduction loss of the bottom-side MOSFET is calculated with the following equation when it operates in
synchronous continuous conduction mode:
Pbottom = (1 - D) ´ ICHG2 ´ RDS(on)
(13)
When charger operates in nonsynchronous mode, the bottom-side MOSFET is off. As a result all the
freewheeling current goes through the body-diode of the bottom-side MOSFET. The body diode power loss
depends on its forward voltage drop (VF), nonsynchronous mode charging current (INONSYNC), and duty cycle (D).
PD = VF x INONSYNC x (1 - D)
(14)
The maximum charging current in nonsynchronous mode can be up to 0.25 A for a 10-mΩ charging currentsensing resistor or 0.5 A if battery voltage is less than 2.5 V. The minimum duty cycle happens at lowest battery
voltage. Choose the bottom-side MOSFET with either an internal Schottky or body diode capable of carrying the
maximum nonsynchronous mode charging current.
9.2.2.6 Input Filter Design
During adapter hot plug-in, the parasitic inductance and input capacitor from the adapter cable form a secondorder system. The voltage spike at VCC pin maybe beyond IC maximum voltage rating and damage IC. The
input filter must be carefully designed and tested to prevent overvoltage event on VCC pin.
There are several methods to damping or limit the over voltage spike during adapter hot plug-in. An electrolytic
capacitor with high ESR as an input capacitor can damp the over voltage spike well below the IC maximum pin
voltage rating. A high current capability TVS Zener diode can also limit the overvoltage level to an IC safe level.
However these two solutions may not have low cost or small size.
A cost-effective and small-size solution is shown in Figure 17. The R1 and C1 are composed of a damping RC
network to damp the hot plug-in oscillation. As a result, the overvoltage spike is limited to a safe level. D1 is used
for reverse-voltage protection for VCC pin. C2 is the VCC pin decoupling capacitor and it should be placed as
close as possible to the VCC pin. C2 value should be less than C1 value so R1 can dominant the equivalent
ESR value to get enough damping effect. R2 is used to limit inrush current of D1 to prevent D1 getting damage
when adapter hot plug-in. R2 and C2 should have a 10-µs time constant to limit the dv/dt on VCC pin to reduce
inrush current when adapter hot plug in. R1 has high inrush current. R1 package must be sized enough to handle
inrush current power loss according to resistor manufacturer’s data sheet. The filter components value always
need to be verified with real application and minor adjustments may need to fit in the real application circuit.
D1
Adapter
connector
R1(2010)
2Ω
C1
2.2μF
R2(1206)
10-20 Ω
VCC pin
C2
0.47-1μF
Figure 17. Input Filter
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Table 9. Component List for Typical System Circuit of Figure 16
PART DESIGNATOR
QTY
DESCRIPTION
C1, C2, C3, C13, C14
5
Capacitor, Ceramic, 0.1 µF, 25 V, 10%, X7R, 0603
C4
1
Capacitor, Ceramic, 100 pF, 25 V, 10%, X7R, 0603
C5, C6
2
Capacitor, Ceramic, 1 µF, 25 V, 10%, X7R, 0603
C7
1
Capacitor, Ceramic, 0.047 µF, 25 V, 10%, X7R, 0603
C8, C9, C10, C11
4
Capacitor, Ceramic, 10 µF, 25 V, 10%, X7R, 1206
Ci
1
Capacitor, Ceramic, 2.2 µF, 25 V, 10%, X7R, 1210
Csys
1
Capacitor, Electrolytic, 220 µF, 25 V
D1
1
Diode, Schottky, 30 V, 200 mA, SOT-23, Fairchild, BAT54
D2
1
Diode, Schottky, 40 V, 120 mA, SOD-323, NXP, RB751V40
Q1, Q2, Q5
3
P-channel MOSFET, –30 V, –9.4 A, SO-8, Vishay Siliconix, Si4435DDY
Q3, Q4
2
N-channel MOSFET, 30 V, 12 A, PowerPAK 1212-8, Vishay Siliconix, SiS412DN
L1
1
Inductor, SMT, 4.7 µH, 5.5 A, Vishay Dale, IHLP2525CZER4R7M01
R1
1
Resistor, Chip, 430 kΩ, 1/10 W, 1%, 0603
R2
1
Resistor, Chip, 66.5 kΩ, 1/10 W, 1%, 0603
R3, R4, R5, R6, R10
5
Resistor, Chip, 10 kΩ, 1/10 W, 1%, 0603
R7
1
Resistor, Chip, 316 kΩ, 1/10 W, 1%, 0603
R8, R12
2
Resistor, Chip, 100 kΩ, 1/10 W, 1%, 0603
R9
1
Resistor, Chip, 10 Ω, 1/4 W, 1%, 1206
R11
1
Resistor, Chip, 39.2 kΩ, 1/10 W, 1%, 0603
R13
1
Resistor, Chip, 3.01 MΩ, 1/10 W, 1%, 0603
R14
1
Resistor, Chip, 10 Ω, 1/10 W, 5%, 0603
R15
1
Resistor, Chip, 7.5 Ω, 1/10 W, 5%, 0603
RAC, RSR
2
Resistor, Chip, 0.01 Ω, 1/2 W, 1%, 1206
Ri
1
Resistor, Chip, 2 Ω, 1/2 W, 1%, 1210
U1
1
Charger controller, 20-pin VQFN, TI, bq24707RGR or bq24707ARGR
9.2.3 Application Curves
98
4-cell 16.8 V
97
96
Efficiency - %
95
3-cell 12.6 V
94
93
2-cell 8.4 V
92
91
VI = 20 V,
f = 750 kHz,
L = 4.7 mH
90
89
88
CH1: PHASE, 20 V/div; CH2: battery voltage, 5 V/div; CH3:
LODRV, 10 V/div; CH4: inductor current, 2 A/div, 400 µs/div
Figure 18. Battery Insertion
30
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0
0.5
1
1.5
2
2.5
Charge Current
3
3.5
4
4.5
Figure 19. Efficiency vs Output Current
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10 Power Supply Recommendations
An external resistor voltage divider attenuates the adapter voltage before it goes to ACDET. The adapter detect
threshold should typically be programmed to a value greater than the maximum battery voltage, but lower than
the IC maximum allowed input voltage and system maximum allowed voltage.
When adapter is removed, the system is powered by the battery. Typically the battery depletion threshold should
be greater than the minimum system voltage so that the battery capacity can be fully utilized for maximum
battery life.
11 Layout
11.1 Layout Guidelines
The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the
components to minimize high frequency current path loop (see Figure 21) is important to prevent electrical and
magnetic field radiation and high-frequency resonant problems. The following is a PCB layout priority list for
proper layout. Layout PCB according to this specific order is essential.
1. Place input capacitor as close as possible to the supply and ground connections of the switching MOSFET
and use the shortest copper trace connection. These parts should be placed on the same layer of PCB
instead of on different layers and using vias to make this connection.
2. The IC should be placed close to the gate terminals of the switching MOSFET and keep the gate drive signal
traces short for a clean MOSFET drive. The IC can be placed on the other side of the PCB of the switching
MOSFET.
3. Place inductor input terminal to the output terminal of the switching MOSFET as close as possible. Minimize
the copper area of this trace to lower electrical and magnetic field radiation, but make the trace wide enough
to carry the charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic
capacitance from this area to any other trace or plane.
4. The charging current-sensing resistor should be placed right next to the inductor output. Route the sense
leads connected across the sensing resistor back to the IC in same layer, close to each other (minimize loop
area) and do not route the sense leads through a high-current path (see Figure 22 for Kelvin connection for
best current accuracy). Place decoupling capacitor on these traces next to the IC
5. Place output capacitor next to the sensing resistor output and ground
6. Output capacitor ground connections need to be tied to the same copper that connects to the input capacitor
ground before connecting to system ground.
7. Use a single ground connection to tie charger power ground to charger analog ground; use analog ground
copper pour just beneath the IC, but avoid power pins to reduce inductive and capacitive noise coupling.
8. Route analog ground separately from power ground. Connect analog ground and connect power ground
separately. Connect analog ground and power ground together using power pad as the single ground
connection point, or use a 0-Ω resistor to tie analog ground to power ground (power pad should tie to analog
ground in this case if possible).
9. Decoupling capacitors should be placed next to the IC pins to make trace connection as short as possible.
10. It is critical to solder the exposed power pad on the backside of the IC package to the PCB ground. Ensure
that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the other layers.
11. The via size and number should be enough for a given current path.
See the EVM design for the recommended component placement with trace and via locations. For the QFN
information, see SCBA017 and SLUA271.
11.1.1 IC Design Guideline
The IC has a unique short circuit protection feature. Its cycle-by-cycle current monitoring feature is achieved
through monitoring the voltage drop across Rdson of the MOSFETs after a certain amount of blanking time. In
case of MOSFET short or inductor short circuit, the overcurrent condition is sensed by two comparators and two
counters will be triggered. After seven times of short circuit events, the charger will be latched off. The way to
reset the charger from latch-off status is reconnect adapter. Figure 20 shows the IC short-circuit protection block
diagram.
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Layout Guidelines (continued)
Adapter
ACP
RAC
ACN R
PCB
BTST
SCP1
High-Side
MOSFET
PHASE
L
REGN
COMP1
Adapter
Plug in
COMP2
Count to 7
CLR
SCP2
RDC
Low-Side
MOSFET
Battery
C
Latch off
Charger
Figure 20. Block Diagram of IC Short-Circuit Protection
In normal operation, low-side MOSFET current is from source-to-drain, which generates negative voltage drop
when it turns on As a result, the overcurrent comparator cannot be triggered. When high-side switch short-circuit
or inductor short-circuit happens, the large current of low-side MOSFET is from drain-to-source and can trigger
low-side switch overcurrent comparator. IC senses low-side switch voltage drop by PHASE pin and GND pin.
The high-side FET short is detected by monitoring the voltage drop between ACP and PHASE. As a result, it not
only monitors the high-side switch voltage drop, but also the adapter sensing resistor voltage drop and PCB trace
voltage drop from ACN terminal of RAC to charger high-side switch drain. Usually, there is a long trace between
input sensing resistor and charger converting input, a careful layout will minimize the trace effect.
The total voltage drop sensed by IC can be expressed as Equation 15.
Vtop = RAC × IDPM + RPCB × (ICHRGIN + (IDPM - ICHRGIN) × k) + RDS(on) × IPEAK
where
•
•
•
•
•
•
•
RAC is the AC adapter current sensing resistance
IDPM is the DPM current set point
RPCB is the PCB trace equivalent resistance
ICHRGIN is the charger input current
k is the PCB factor
RDS(on) is the high-side MOSFET turnon resistance
IPEAK is the peak current of inductor
(15)
Here, the PCB factor k equals 0 means the best layout shown in Figure 24, where the PCB trace only goes
through charger input current, while k equals 1 means the worst layout shown in Figure 23, where the PCB trace
goes through all the DPM current. The total voltage drop must below the high-side short circuit protection
threshold to prevent unintentional charger shutdown in normal operation.
The low-side MOSFET short-circuit voltage drop threshold is fixed to typical 110 mV. The high-side MOSFET
short-circuit voltage drop threshold can be adjusted through SMBus command. ChargeOption() bit[8:7] = 00, 01,
10, 11 set the threshold 300 mV, 500 mV, 700 mV, and 900 mV, respectively. For a fixed PCB layout, host
should set proper short-circuit protection threshold level to prevent unintentional charger shutdown in normal
operation.
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11.2 Layout Example
High
Frequency
Current
Path
VIN
C1
R1
L1
PHASE
VBAT
BAT
GND
C2
Figure 21. High-Frequency Current Path
Charge Current Direction
R SNS
To Inductor
To Capacitor and battery
Current Sensing Direction
To SRP and SRN pin
Figure 22. Sensing Resistor PCB Layout
To prevent unintentional charger shutdown in normal operation, MOSFET RDS(on) selection and PCB layout is
very important. Figure 23 shows a PCB layout example that needs improvement and its equivalent circuit. In this
layout, system current path and charger input current path are not separated; as a result, the system current
causes voltage drop in the PCB copper and is sensed by the IC. The worst layout is when a system current pullpoint is after charger input; as a result, all system current voltage drops are counted into overcurrent protection
comparator. The worst case for IC is the total system current and charger input current sum equals DPM current.
When the system pulls more current, the charger IC tries to regulate RAC current as a constant current by
reducing charging current.
I DPM
R AC
System Path PCB Trace
System current
R AC
R PCB
I SYS
I CHRGIN
Charger input current
Charger Input PCB Trace
To ACP
ACP
ACN
Charger
I BAT
To ACN
(a) PCB Layout
(b) Equivalent Circuit
Figure 23. PCB Layout Example: Needs Improvement
Figure 24 shows the optimized PCB layout example. The system current path and charge input current path is
separated; as a result, the IC only senses charger input current caused PCB voltage drop and minimized the
possibility of unintentional charger shutdown in normal operation. This also makes PCB layout easier for high
system current application.
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Layout Example (continued)
R AC
System Path PCB Trace
I DPM
System current
Single point connection at RAC
I SYS
R AC
R PCB
Charger input current
ACP
To ACP
To ACN
ACN
I CHRGIN
Charger
I BAT
Charger Input PCB Trace
(a) PCB Layout
(b) Equivalent Circuit
Figure 24. PCB Layout Example: Optimized
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12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation, see the following:
• bq24707EVM for Multicell, Synchronous, Switch-Mode Charger With SMBus Interface, SLUU445
• Quad Flatpack No-Lead Logic Packages, SCBA017
• QFN/SON PCB Attachment, SLUA271
12.3 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 10. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
bq24707
Click here
Click here
Click here
Click here
Click here
bq24707A
Click here
Click here
Click here
Click here
Click here
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
9-Apr-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
BQ24707ARGRR
ACTIVE
VQFN
RGR
20
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ07A
BQ24707ARGRT
ACTIVE
VQFN
RGR
20
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ07A
BQ24707RGRR
ACTIVE
VQFN
RGR
20
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ707
BQ24707RGRT
ACTIVE
VQFN
RGR
20
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
BQ707
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
9-Apr-2015
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Apr-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
BQ24707ARGRR
VQFN
RGR
20
3000
330.0
12.4
3.75
3.75
1.15
8.0
12.0
Q1
BQ24707ARGRT
VQFN
RGR
20
250
180.0
12.4
3.75
3.75
1.15
8.0
12.0
Q1
BQ24707ARGRT
VQFN
RGR
20
250
180.0
12.4
3.75
3.75
1.15
8.0
12.0
Q1
BQ24707RGRR
VQFN
RGR
20
3000
330.0
12.4
3.75
3.75
1.15
8.0
12.0
Q1
BQ24707RGRT
VQFN
RGR
20
250
180.0
12.4
3.75
3.75
1.15
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
9-Apr-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
BQ24707ARGRR
VQFN
RGR
20
3000
552.0
367.0
36.0
BQ24707ARGRT
VQFN
RGR
20
250
552.0
185.0
36.0
BQ24707ARGRT
VQFN
RGR
20
250
210.0
185.0
35.0
BQ24707RGRR
VQFN
RGR
20
3000
552.0
367.0
36.0
BQ24707RGRT
VQFN
RGR
20
250
552.0
185.0
36.0
Pack Materials-Page 2
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