ON FGH40T65SQD 650 v, 40 a field stop trench igbt Datasheet

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FGH40T65SQD
650 V, 40 A Field Stop Trench IGBT
Features
•
•
•
•
•
•
•
•
•
General Description
175oC
Maximum Junction Temperature: TJ =
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A
100% of the Parts tested for ILM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
RoHS Compliant
E
C
Using novel field stop IGBT technology, ON semiconductor’s
new series of field stop 4th generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and
PFC applications where low conduction and switching losses
are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
FGH40T65SQD_F155 (1)
Unit
VCES
Symbol
Collector to Emitter Voltage
650
V
VGES
Gate to Emitter Voltage
 20
V
Transient Gate to Emitter Voltage
30
V
IC
Description
Collector Current
@ TC = 25 C
80
A
Collector Current
@ TC = 100oC
40
A
ILM (2)
Pulsed Collector Current
ICM (3)
Pulsed Collector Current
IF
IFM (3)
PD
o
@ TC =
25oC
160
A
160
A
Diode Forward Current
@ TC = 25oC
40
A
Diode Forward Current
@ TC = 100oC
20
A
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
@ TC = 25oC
Maximum Power Dissipation
@ TC = 100oC
160
A
238
W
119
W
TJ
Operating Junction Temperature
-55 to +175
oC
Tstg
Storage Temperature Range
-55 to +175
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
oC
Notes:
1. Due to system integration constraints between Fairchild and ON semiconductor, as of November 1, 2017 any product part number with a underscore will be replaced with a
dash. This is a notification.
2. VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 22  , Inductive Load
3. Repetitive rating: Pulse width limited by max. junction temperature
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FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
June 2017
FGH40T65SQD_F155
Unit
RJC (IGBT)
Symbol
Thermal Resistance, Junction to Case, Max.
Parameter
0.63
oC/W
RJC (Diode)
Thermal Resistance, Junction to Case, Max.
1.71
oC/W
RJA
Thermal Resistance, Junction to Ambient, Max.
40
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Qty per Tube
FGH40T65SQD
FGH40T65SQD_F155
TO-247 G03
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
650
-
-
V
-
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
BVCES /
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 1mA
-
0.6
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
-
-
400
nA
IC = 40 mA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
2.6
4.5
6.4
V
IC = 40 A, VGE = 15 V
-
1.6
2.1
V
IC = 40 A, VGE = 15 V,
TC = 175oC
-
1.92
-
V
-
2620
-
pF
VCE = 30 V, VGE = 0 V,
f = 1 MHz
-
60
-
pF
-
9
-
pF
16.4
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
Td(on)
Turn-On Delay Time
-
Tr
Rise Time
-
4.8
-
ns
Td(off)
Turn-Off Delay Time
-
86.4
-
ns
Tf
Fall Time
-
8.8
-
ns
Eon
Turn-On Switching Loss
-
138
-
J
VCC = 400 V, IC = 10 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
Eoff
Turn-Off Switching Loss
-
52
-
J
Ets
Total Switching Loss
-
190
-
J
Td(on)
Turn-On Delay Time
-
17.6
-
ns
Tr
Rise Time
-
9.6
-
ns
Td(off)
Turn-Off Delay Time
-
80
-
ns
Tf
Fall Time
-
8.8
-
ns
VCC = 400 V, IC = 20 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 25oC
Eon
Turn-On Switching Loss
-
329
-
J
Eoff
Turn-Off Switching Loss
-
84
-
J
Ets
Total Switching Loss
-
413
-
J
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FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
Thermal Characteristics
Symbol
Parameter
(Continued)
Test Conditions
Min.
Typ.
Max.
Unit
14.4
-
ns
Td(on)
Turn-On Delay Time
-
Tr
Rise Time
-
6.4
-
ns
Td(off)
Turn-Off Delay Time
-
99.2
-
ns
Tf
Fall Time
-
8
-
ns
Eon
Turn-On Switching Loss
-
269
-
J
VCC = 400 V, IC = 10 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
Eoff
Turn-Off Switching Loss
-
132
-
J
Ets
Total Switching Loss
-
401
-
J
Td(on)
Turn-On Delay Time
-
16
-
ns
Tr
Rise Time
-
11.2
-
ns
Td(off)
Turn-Off Delay Time
-
91.2
-
ns
Tf
Fall Time
-
8
-
ns
Eon
Turn-On Switching Loss
-
581
-
J
Eoff
Turn-Off Switching Loss
-
237
-
J
VCC = 400 V, IC = 20 A,
RG = 6 , VGE = 15 V,
Inductive Load, TC = 175oC
Ets
Total Switching Loss
-
818
-
J
Qg
Total Gate Charge
-
80
-
nC
Qge
Gate to Emitter Charge
-
15
-
nC
Qgc
Gate to Collector Charge
-
20
-
nC
VCE = 400 V, IC = 40 A,
VGE = 15 V
Electrical Characteristics of the Diode
Symbol
Parameter
VFM
Diode Forward Voltage
Erec
Reverse Recovery Energy
Trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
TC = 25°C unless otherwise noted
Test Conditions
IF = 20 A
IF = 20 A, dIF/dt = 200 A/s
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Min.
Typ.
Max.
TC = 25oC
-
2.2
2.8
TC = 175oC
-
1.94
-
TC = 175oC
-
50
-
TC =
25oC
-
31.8
-
-
192
-
TC = 25oC
-
50.6
-
TC = 175oC
-
699
-
TC = 175oC
Unit
V
J
ns
nC
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FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
Electrical Characteristics of the IGBT
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs.
Gate Resistance
Figure 10. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Switching Loss vs.
Gate Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
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FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs.
Collector Current
Figure 15. Load Current Vs. Frequency
Figure 16. SOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
Figure 21.Transient Thermal Impedance of IGBT
PDM
t1
t2
Figure 22.Transient Thermal Impedance of Diode
PDM
t1
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FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
Mechanical Dimensions
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FGH40T65SQD — 650 V, 40 A Field Stop Trench IGBT
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the
United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A
listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to
make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor
products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for
use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or
any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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literature is subject to all applicable copyright laws and is not for resale in any manner.
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© Semiconductor Components Industries, LLC
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