Cypress CY7C1306BV25 18-mbit burst of 2 pipelined sram with qdrâ ¢ architecture Datasheet

CY7C1303BV25
CY7C1306BV25
18-Mbit Burst of 2 Pipelined SRAM with
QDR™ Architecture
Features
Functional Description
• Separate independent Read and Write data ports
— Supports concurrent transactions
• 167-MHz Clock for high bandwidth
— 2.5 ns Clock-to-Valid access time
• 2-Word Burst on all accesses
• Double Data Rate (DDR) interfaces on both Read and
Write Ports (data transferred at 333 MHz) @167 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches.
• Single multiplexed address input bus latches address
inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• 2.5V core power supply with HSTL Inputs and Outputs
• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–1.9V)
• JTAG Interface
Depth expansion is accomplished with a Port Select input for
each port. Each Port Selects allow each port to operate
independently.
• Variable Impedance HSTL
Configurations
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
CY7C1303BV25 – 1M x 18
CY7C1306BV25 – 512K x 36
Cypress Semiconductor Corporation
Document #: 38-05627 Rev. *A
The CY7C1303BV25 and CY7C1306BV25 are 2.5V
Synchronous Pipelined SRAMs equipped with QDR™ architecture. QDR architecture consists of two separate ports to
access the memory array. The Read port has dedicated Data
Outputs to support Read operations and the Write Port has
dedicated Data inputs to support Write operations. Access to
each port is accomplished through a common address bus.
The Read address is latched on the rising edge of the K clock
and the Write address is latched on the rising edge of K clock.
QDR has separate data inputs and data outputs to completely
eliminate the need to “turn-around” the data bus required with
common I/O devices. Accesses to the CY7C1303BV25/
CY7C1306BV25 Read and Write ports are completely
independent of one another. All accesses are initiated
synchronously on the rising edge of the positive input clock
(K). In order to maximize data throughput, both Read and
Write ports are equipped with Double Data Rate (DDR) interfaces. Therefore, data can be transferred into the device on
every rising edge of both input clocks (K and K) and out of the
device on every rising edge of the output clock (C and C, or K
and K when in single clock mode) thereby maximizing performance while simplifying system design. Each address location
is associated with two 18-bit words (CY7C1303BV25) or two
36-bit words (CY7C1306BV25) that burst sequentially into or
out of the device.
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 3, 2006
CY7C1303BV25
CY7C1306BV25
Logic Block Diagram (CY7C1303BV25)
D[17:0]
18
K
CLK
Gen.
K
512Kx18
Memory
Array
Write
Data Reg
512Kx18
Memory
Array
Read Add. Decode
19
Write Add. Decode
Address
Register
A(18:0)
Write
Data Reg
Address
Register
Control
Logic
Read Data Reg.
36
Vref
WPS
BWS0
18
Reg.
Control
Logic
18
A(18:0)
19
RPS
C
C
Reg. 18
18
Reg.
BWS1
Q[17:0]
18
Logic Block Diagram (CY7C1306BV25)
D[35:0]
36
K
CLK
Gen.
K
256Kx36
Memory
Array
Write
Data Reg
256Kx36
Memory
Array
Read Add. Decode
18
Write Add. Decode
Address
Register
A(17:0)
Write
Data Reg
Address
Register
Control
Logic
Read Data Reg.
72
Vref
WPS
BWS0
Control
Logic
36
Reg.
36
Reg. 36
Reg.
BWS1
BWS2
36
A(17:0)
18
RPS
C
C
36
Q[35:0]
BWS3
Selection Guide
CY7C1303BV25-167
CY7C1306BV25-167
Unit
Maximum Operating Frequency
167
MHz
Maximum Operating Current
500
mA
Document #: 38-05627 Rev. *A
Page 2 of 19
CY7C1303BV25
CY7C1306BV25
Pin Configuration
165-ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1303BV25 (1M x 18)
1
2
3
Gnd/ 144M NC/ 36M
4
5
6
7
8
9
10
11
WPS
BWS1
K
NC
RPS
A
Gnd/ 72M
NC
A
NC
K
BWS0
A
NC
NC
Q8
A
A
VSS
NC
Q7
D8
VSS
VSS
VSS
NC
NC
D7
VSS
VDDQ
NC
D6
Q6
A
NC
B
NC
C
NC
NC
D10
VSS
A
D
NC
D11
Q10
VSS
VSS
E
NC
NC
Q11
VDDQ
VSS
VSS
Q9
D9
F
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
G
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
D5
H
NC
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
D14
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q4
D4
K
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
L
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
M
NC
NC
D16
VSS
VSS
VSS
VSS
VSS
NC
Q1
D2
N
NC
D17
Q16
VSS
A
A
A
VSS
NC
NC
D1
P
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
9
10
CY7C1306BV25 (512K x 36)
1
2
4
5
6
7
8
WPS
BWS2
K
BWS1
RPS
D18
A
BWS3
K
BWS0
A
D17
Q17
Q8
D19
VSS
A
A
A
VSS
D16
Q7
D8
D20
Q19
VSS
VSS
VSS
VSS
VSS
Q16
D15
D7
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
NC
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
D4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
M
D33
Q34
D25
VSS
VSS
VSS
VSS
VSS
D10
Q1
D2
A
NC
B
Q27
Q18
C
D27
Q28
D
D28
E
F
G
3
Gnd/ 288M NC/72M
11
NC/36M Gnd/ 144M
NC
N
D34
D26
Q25
VSS
A
A
A
VSS
Q10
D9
D1
P
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document #: 38-05627 Rev. *A
Page 3 of 19
CY7C1303BV25
CY7C1306BV25
Pin Definitions
Name
I/O
Description
D[x:0]
InputData input signals, sampled on the rising edge of K and K clocks during valid write operaSynchronous tions.
CY7C1303BV25 – D[17:0]
CY7C1306BV25 – D[35:0]
WPS
InputWrite Port Select, active LOW. Sampled on the rising edge of the K clock. When asserted active,
Synchronous a Write operation is initiated. Deasserting will deselect the Write port. Deselecting the Write port
will cause D[x:0] to be ignored.
InputByte Write Select 0, 1, 2 and 3 - active LOW. Sampled on the rising edge of the K and K clocks
BWS0, BWS1,
BWS2, BWS3 Synchronous during Write operations. Used to select which byte is written into the device during the current
portion of the Write operations.
CY7C1303BV25 - BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1306BV25 - BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3
controls D[35:27]
Bytes not written remain unaltered. Deselecting a Byte Write Select will cause the corresponding
byte of data to be ignored and not written into the device.
A
InputAddress Inputs. Sampled on the rising edge of the K clock during active Read operations and
Synchronous on the rising edge of K for Write operations. These address inputs are multiplexed for both Read
and Write operations. Internally, the device is organized as 1M x 18 (2 arrays each of 512K x 18)
for CY7C1303BV25 and 512K x 36 (2 arrays each of 256K x 36) for CY7C1306BV25. Therefore,
only 19 address inputs are needed to access the entire memory array of CY7C1303BV25 and
18 address inputs for CY7C1306BV25. These inputs are ignored when the appropriate port is
deselected.
Q[x:0]
OutputsData Output signals. These pins drive out the requested data during a Read operation. Valid
Synchronous data is driven out on the rising edge of both the C and C clocks during Read operations or K and
K when in single clock mode. When the Read port is deselected, Q[x:0] are automatically
three-stated.
CY7C1303BV25 - Q[17:0]
CY7C1306BV25 - Q[35:0]
RPS
InputRead Port Select, active LOW. Sampled on the rising edge of positive input clock (K). When
Synchronous active, a Read operation is initiated. Deasserting will cause the Read port to be deselected. When
deselected, the pending access is allowed to complete and the output drivers are automatically
three-stated following the next rising edge of the K clock. Each read access consists of a burst
of two sequential 18-bit or 36-bit transfers.
C
Input-Clock
Positive Input Clock for Output Data. C is used in conjunction with C to clock out the Read
data from the device. C and C can be used together to deskew the flight times of various devices
on the board back to the controller. See application example for further details.
C
Input-Clock
Negative Input Clock for Output Data. C is used in conjunction with C to clock out the Read
data from the device. C and C can be used together to deskew the flight times of various devices
on the board back to the controller. See application example for further details.
K
Input-Clock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the
device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated
on the rising edge of K.
K
Input-Clock
Negative Input Clock Input. K is used to capture synchronous inputs to the device and to drive
out data through Q[x:0] when in single clock mode.
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system
data bus impedance. Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternately, this pin can be connected directly to VDDQ, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left
unconnected.
ZQ
TDO
Output
TDO pin for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
Document #: 38-05627 Rev. *A
Page 4 of 19
CY7C1303BV25
CY7C1306BV25
Pin Definitions (continued)
Name
I/O
Description
NC/36M
N/A
Address expansion for 36M. This pin is not connected to the die and so can be tied to any
voltage level on CY7C1303BV25/CY7C1306BV25.
GND/72M
Input
Address expansion for 72M. This pin has to be tied to GND on CY7C1303BV25.
NC/72M
N/A
Address expansion for 72M. This pin can be tied to any voltage level on CY7C1306BV25.
GND/144M
Input
Address expansion for 144M. This pin has to be tied to GND on
CY7C1303BV25/CY7C1306BV25.
GND/288M
Input
Address expansion for 288M. This pin has to be tied to GND on CY7C1306BV25.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
VDD
InputReference
Power Supply Power supply inputs to the core of the device.
Ground
VSS
VDDQ
Reference Voltage Input. Static input used to set the reference level for HSTL inputs and Outputs
as well as AC measurement points.
Ground for the device.
Power Supply Power supply inputs for the outputs of the device.
Introduction
Functional Overview
The CY7C1303BV25/CY7C1306BV25 are synchronous
pipelined Burst SRAM equipped with both a Read port and a
Write port. The Read port is dedicated to Read operations and
the Write port is dedicated to Write operations. Data flows into
the SRAM through the Write port and out through the Read
port. These devices multiplex the address inputs in order to
minimize the number of address pins required. By having
separate Read and Write ports, this architecture completely
eliminates the need to “turn-around” the data bus and avoids
any possible data contention, thereby simplifying system
design. 38-05627Each access consists of two 18-bit data
transfers in the case of CY7C1303BV25, and two 36-bit data
transfers in the case of CY7C1306BV25, in one clock cycle.
Accesses for both ports are initiated on the rising edge of the
Positive Input Clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and
all output timings are referenced to rising edge of output clocks
(C and C or K and K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input
registers controlled by the rising edge of the input clocks (K
and K). All synchronous data outputs (Q[x:0]) pass through
output registers controlled by the rising edge of the output
clocks (C and C, or K and K when in single clock mode).
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of input
clocks (K and K).
The following descriptions take CY7C1303BV25 as an
example. The same basic descriptions apply to
CY7C1306BV25.
Read Operations
The CY7C1303BV25 is organized internally as 2 arrays of
512K x 18. Accesses are completed in a burst of two
sequential 18-bit data words. Read operations are initiated by
asserting RPS active at the rising edge of the positive input
clock (K). The address is latched on the rising edge of the K
clock. Following the next K clock rise the corresponding lower
order 18-bit word of data is driven onto the Q[17:0] using C as
Document #: 38-05627 Rev. *A
the output timing reference. On the subsequent rising edge of
C the higher order data word is driven onto the Q[17:0]. The
requested data will be valid 2.5 ns from the rising edge of the
output clock (C and C, or K and K when in single clock mode,
250-MHz device).
Synchronous internal circuitry will automatically three-state
the outputs following the next rising edge of the positive output
clock (C). This will allow for a seamless transition between
devices without the insertion of wait states in a depth
expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the same K clock
rise the data presented to D[17:0] is latched and stored into the
lower 18-bit Write Data register provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K), the address is latched and the information
presented to D[17:0] is stored into the Write Data register
provided BWS[1:0] are both asserted active. The 36 bits of data
are then written into the memory array at the specified
location.
When deselected, the Write port will ignore all inputs after the
pending Write operations have been completed.
Byte Write Operations
Byte Write operations are supported by the CY7C1303BV25.
A Write operation is initiated as described in the Write
Operation section above. The bytes that are written are determined by BWS0 and BWS1 which are sampled with each set
of 18-bit data word. Asserting the appropriate Byte Write
Select input during the data portion of a write will allow the data
being presented to be latched and written into the device.
Deasserting the Byte Write Select input during the data portion
of a write will allow the data stored in the device for that byte
to remain unaltered. This feature can be used to simplify
Read/Modify/Write operations to a Byte Write operation.
Single Clock Mode
The CY7C1303BV25 can be used with a single clock mode. In
this mode the device will recognize only the pair of input clocks
(K and K) that control both the input and output registers. This
Page 5 of 19
CY7C1303BV25
CY7C1306BV25
Depth Expansion
operation is identical to the operation if the device had zero
skew between the K/K and C/C clocks. All timing parameters
remain the same in this mode. To use this mode of operation,
the user must tie C and C HIGH at power-up.This function is
a strap option and not alterable during device operation.
The CY7C1303BV25 has a Port Select input for each port.
This allows for easy depth expansion. Both Port Selects are
sampled on the rising edge of the Positive Input Clock only (K).
Each port select input can deselect the specified port.
Deselecting a port will not affect the other port. All pending
transactions (Read and Write) will be completed prior to the
device being deselected.
Concurrent Transactions
The Read and Write ports on the CY7C1303BV25 operate
completely independently of one another. Since each port
latches the address inputs on different clock edges, the user
can Read or Write to any location, regardless of the transaction on the other port. Also, reads and writes can be started
in the same clock cycle. If the ports access the same location
at the same time, the SRAM will deliver the most recent information associated with the specified address location. This
includes forwarding data from a Write cycle that was initiated
on the previous K clock rise.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ
pin on the SRAM and VSS to allow the SRAM to adjust its
output driver impedance. The value of RQ must be 5X the
value of the intended line impedance driven by the SRAM, The
allowable range of RQ to guarantee impedance matching with
a tolerance of ±15% is between 175Ω and 350Ω, with
VDDQ=1.5V. The output impedance is adjusted every 1024
cycles to account for drifts in supply voltage and temperature.
Application Example[1]
Truth Table[2, 3, 4, 5, 6, 7]
Operation
K
RPS
WPS
Write Cycle:
Load address on the rising edge of K clock; input write
data on K and K rising edges.
L-H
X
L
D(A+0) at
K(t) ↑
D(A+1) at
K(t) ↑
Read Cycle:
Load address on the rising edge of K clock; wait one
cycle; read data on 2 consecutive C and C rising edges.
L-H
L
X
Q(A+0) at
C(t+1)↑
Q(A+1) at
C(t+1) ↑
NOP: No Operation
L-H
H
H
D=X
Q = High-Z
D=X
Q = High-Z
Stopped
X
X
Previous
State
Previous
State
Standby: Clock Stopped
DQ
DQ
Notes:
1. The above application shows 4 QDR-I being used.
2. X = Don't Care, H = Logic HIGH, L = Logic LOW, ↑represents rising edge.
3. Device will power-up deselected and the outputs in a three-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A+0, A+1 represent the addresses sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t+1 is the first clock cycle succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
Document #: 38-05627 Rev. *A
Page 6 of 19
CY7C1303BV25
CY7C1306BV25
Write Descriptions (CY7C1303BV25)[2, 8]
BWS0
BWS1
K
K
Comments
L
L
L-H
-
During the Data portion of a Write sequence, both bytes (D[17:0]) are written into the device.
L
L
-
L-H
During the Data portion of a Write sequence, both bytes (D[17:0]) are written into the device.
L
H
L-H
-
During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the
device. D[17:9] remains unaltered.
L
H
-
L-H
During the Data portion of a Write sequence, only the lower byte (D[8:0]) is written into the
device. D[17:9] remains unaltered.
H
L
L-H
-
During the Data portion of a Write sequence, only the byte (D[17:9]) is written into the device.
D[8:0] remains unaltered.
H
L
-
L-H
During the Data portion of a Write sequence, only the byte (D[17:9]) is written into the device.
D[8:0] remains unaltered.
H
H
L-H
-
No data is written into the device during this portion of a write operation.
H
H
-
L-H
No data is written into the device during this portion of a write operation.
Write Descriptions (CY7C1306BV25)[2, 8]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L-H
-
During the Data portion of a Write sequence, all four bytes (D[35:0]) are
written into the device.
L
L
L
L
-
L-H
During the Data portion of a Write sequence, all four bytes (D[35:0]) are
written into the device.
L
H
H
H
L-H
-
During the Data portion of a Write sequence, only the lower byte (D[8:0])
is written into the device. D[35:9] will remain unaltered.
L
H
H
H
-
L-H
During the Data portion of a Write sequence, only the lower byte (D[8:0])
is written into the device. D[35:9] will remain unaltered.
H
L
H
H
L-H
-
During the Data portion of a Write sequence, only the byte (D[17:9]) is
written into the device. D[8:0] and D[35:18] will remain unaltered.
H
L
H
H
-
L-H
During the Data portion of a Write sequence, only the byte (D[17:9]) is
written into the device. D[8:0] and D[35:18] will remain unaltered.
H
H
L
H
L-H
-
During the Data portion of a Write sequence, only the byte (D[26:18]) is
written into the device. D[17:0] and D[35:27] will remain unaltered.
H
H
L
H
-
L-H
During the Data portion of a Write sequence, only the byte (D[26:18]) is
written into the device. D[17:0] and D[35:27] will remain unaltered.
H
H
H
L
L-H
-
During the Data portion of a Write sequence, only the byte (D[35:27]) is
written into the device. D[26:0] will remain unaltered.
H
H
H
L
-
L-H
During the Data portion of a Write sequence, only the byte (D[35:27]) is
written into the device. D[26:0] will remain unaltered.
H
H
H
H
L-H
-
No data is written into the device during this portion of a Write operation.
H
H
H
H
-
L-H
No data is written into the device during this portion of a Write operation.
Note:
8. Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. BWS0, BWS1, in the case of CY7C1303BV25 and also BWS2 and BWS3
in the case of CY7C1306BV25 can be altered on different portions of a write cycle, as long as the set-up and hold requirements are achieved. 38-05627
Document #: 38-05627 Rev. *A
Page 7 of 19
CY7C1303BV25
CY7C1306BV25
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant
with IEEE Standard #1149.1-1900. The TAP operates using
JEDEC standard 2.5V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should
be left unconnected. Upon power-up, the device will come up
in a reset state which will not interfere with the operation of the
device.
TDI and TDO pins as shown in TAP Controller Block Diagram.
Upon power-up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
When the TAP controller is in the Capture IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Test Access Port—Test Clock
Boundary Scan Register
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices.
Test Mode Select
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this pin unconnected if the TAP is not used. The pin is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine (see Instruction codes). The
output changes on the falling edge of TCK. TDO is connected
to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating. At power-up, the TAP is reset internally to ensure
that TDO comes up in a high-Z state.
TAP Registers
Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI pin
on the rising edge of TCK. Data is output on the TDO pin on
the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
Document #: 38-05627 Rev. *A
The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO pins when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the Input and
Output ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Code table. Three of these instructions are listed
as RESERVED and should not be used. The other five instructions are described in detail below.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO pins.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction
Page 8 of 19
CY7C1303BV25
CY7C1306BV25
is loaded into the instruction register upon power-up or
whenever the TAP controller is given a test logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High-Z state until the next command is
given during the “Update IR” state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 10 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture set-up plus
hold times (tCS and tCH). The SRAM clock input might not be
captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
PRELOAD allows an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells
prior to the selection of another boundary scan test operation.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO pins. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be
driven out through the system output pins. This instruction also
selects the boundary scan register to be connected for serial
access between the TDI and TDO in the shift-DR controller
state.
EXTEST Output Bus Tri-state
IEEE Standard 1149.1 mandates that the TAP controller be
able to put the output bus into a tri-state mode.
The boundary scan register has a special bit located at bit #47.
When this scan cell, called the “extest output bus tri-state”, is
latched into the preload register during the “Update-DR” state
in the TAP controller, it will directly control the state of the
output (Q-bus) pins, when the EXTEST is entered as the
current instruction. When HIGH, it will enable the output
buffers to drive the output bus. When LOW, this bit will place
the output bus into a High-Z condition.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that
cell, during the “Shift-DR” state. During “Update-DR”, the value
loaded into that shift-register cell will latch into the preload
register. When the EXTEST instruction is entered, this bit will
directly control the output Q-bus pins. Note that this bit is
pre-set HIGH to enable the output when the device is
powered-up, and also when the TAP controller is in the
“Test-Logic-Reset” state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
The shifting of data for the SAMPLE and PRELOAD phases
can occur concurrently when required—that is, while data
captured is shifted out, the preloaded data can be shifted in.
Document #: 38-05627 Rev. *A
Page 9 of 19
CY7C1303BV25
CY7C1306BV25
TAP Controller State Diagram[9]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
1
1
SELECT
DR-SCAN
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-DR
0
0
SHIFT-IR
0
SHIFT-DR
1
0
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-DR
0
0
PAUSE-IR
1
1
0
0
EXIT2-IR
EXIT2-DR
1
1
UPDATE-DR
1
0
UPDATE-IR
1
0
Note:
9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document #: 38-05627 Rev. *A
Page 10 of 19
CY7C1303BV25
CY7C1306BV25
TAP Controller Block Diagram
0
Bypass Register
Selection
Circuitry
TDI
2
1
0
1
0
Instruction Register
31 30 29
.
.
2
Selection
Circuitry
TDO
Identification Register
106 .
.
.
.
2
1
0
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics Over the Operating Range [10, 14, 17]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.7
V
VOH2
Output HIGH Voltage
IOH = −100 µA
2.1
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
0.7
V
VOL2
Output LOW Voltage
IOL = 100 µA
0.2
V
VIH
Input HIGH Voltage
1.7
VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
0.7
V
IX
Input and Output Load Current
−5
5
µA
GND ≤ VI ≤ VDDQ
TAP AC Switching Characteristics Over the Operating Range[11, 12]
Parameter
Description
Min.
Max.
Unit
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
20
ns
tTL
TCK Clock LOW
20
ns
50
ns
20
MHz
Set-up Times
tTMSS
TMS Set-up to TCK Clock Rise
10
ns
tTDIS
TDI Set-up to TCK clock Rise
10
ns
tCS
Capture Set-up to TCK Rise
10
ns
Hold Times
tTMSH
TMS Hold after TCK Clock Rise
10
ns
tTDIH
TDI Hold after Clock Rise
10
ns
tCH
Capture Hold after Clock Rise
10
Notes:
10. These characteristic pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
11. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
12. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Document #: 38-05627 Rev. *A
ns
Page 11 of 19
CY7C1303BV25
CY7C1306BV25
TAP AC Switching Characteristics Over the Operating Range[11, 12] (continued)
Parameter
Description
Min.
Max.
Unit
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
20
0
ns
ns
TAP Timing and Test Conditions[12]
1.25V
50Ω
ALL INPUT PULSES
TDO
2.5V
Z0 = 50Ω
(a)
1.25V
CL = 20 pF
0V
GND
tTL
tTH
Test Clock
TCK
tTCYC
tTMSS
tTMSH
Test Mode Select
TMS
tTDIS
tTDIH
Test Data-In
TDI
Test Data-Out
TDO
tTDOX
tTDOV
Identification Register Definitions
Value
CY7C1303BV25
CY7C1306BV25
Revision Number (31:29)
Instruction Field
000
000
Cypress Device ID (28:12)
01011010010010101
01011010010100101
Cypress JEDEC ID (11:1)
00000110100
00000110100
ID Register Presence (0)
1
1
Document #: 38-05627 Rev. *A
Description
Version number.
Defines the type of SRAM.
Allows unique identification of SRAM vendor.
Indicate the presence of an ID register.
Page 12 of 19
CY7C1303BV25
CY7C1306BV25
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
107
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the Input/Output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register
between TDI and TDO. This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the Input/Output contents. Places the boundary scan register
between TDI and TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the Input/Output ring contents. Places the boundary scan register
between TDI and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
Document #: 38-05627 Rev. *A
Page 13 of 19
CY7C1303BV25
CY7C1306BV25
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
27
11H
54
7B
81
3G
1
6P
28
10G
55
6B
82
2G
2
6N
29
9G
56
6A
83
1J
3
7P
30
11F
57
5B
84
2J
4
7N
31
11G
58
5A
85
3K
5
7R
32
9F
59
4A
86
3J
6
8R
33
10F
60
5C
87
2K
7
8P
34
11E
61
4B
88
1K
8
9R
35
10E
62
3A
89
2L
9
11P
36
10D
63
1H
90
3L
10
10P
37
9E
64
1A
91
1M
11
10N
38
10C
65
2B
92
1L
12
9P
39
11D
66
3B
93
3N
13
10M
40
9C
67
1C
94
3M
14
11N
41
9D
68
1B
95
1N
15
9M
42
11B
69
3D
96
2M
16
9N
43
11C
70
3C
97
3P
17
11L
44
9B
71
1D
98
2N
18
11M
45
10B
72
2C
99
2P
19
9L
46
11A
73
3E
100
1P
20
10L
47
Internal
74
2D
101
3R
21
11K
48
9A
75
2E
102
4R
22
10K
49
8B
76
1E
103
4P
23
9J
50
7C
77
2F
104
5P
24
9K
51
6C
78
3F
105
5N
25
10J
52
8A
79
1G
106
5R
26
11J
53
7A
80
1F
Document #: 38-05627 Rev. *A
Page 14 of 19
CY7C1303BV25
CY7C1306BV25
DC Input Voltage[17]............................... –0.5V to VDD + 0.5V
Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
(Above which the useful life may be impaired.)
Storage Temperature ................................ –65°C to + 150°C
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Latch-up Current.................................................... > 200 mA
Supply Voltage on VDD Relative to GND....... –0.5V to + 3.6V
Operating Range
Supply Voltage on VDDQ Relative to GND ..... –0.5V to + VDD
Range
DC Applied to Outputs in
Ambient
Temperature (TA)
VDD[13]
VDDQ[13]
0°C to + 70°C
2.5 ± 0.1V
1.4V to 1.9V
Com’l
High-Z State ........................................ –0.5V to VDDQ + 0.5V
Ind’l
–40°C to + 85°C
Electrical Characteristics Over the Operating Range[14]
DC Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
Typ.
Max.
Unit
VDD
Power Supply Voltage
2.4
2.5
2.6
V
VDDQ
I/O Supply Voltage
1.4
1.5
1.9
V
VOH
Output HIGH Voltage
Note 15
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOL
Output LOW Voltage
Note 16
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = –0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VSS
0.2
V
VIH
Input HIGH Voltage[17]
VREF + 0.1
VDDQ + 0.3
V
VIL
Input LOW Voltage[17, 18]
–0.3
VREF – 0.1
V
VREF
Input Reference Voltage[19] Typical value = 0.75V
IX
Input Leakage Current
0.68
GND ≤ VI ≤ VDDQ
–5
–5
0.75
0.95
V
5
µA
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
5
µA
IDD
VDD Operating Supply
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
500
mA
ISB1
Automatic
Power-Down
Current
Max. VDD, Both Ports Deselected,
VIN ≥ VIH or VIN ≤ VIL f = fMAX =1/tCYC,
Inputs Static
240
mA
Max.
Unit
AC Input Requirements Over the Operating Range
Parameter
Description
Test Conditions
Min.
Typ.
VIH
Input HIGH Voltage
VREF + 0.2
–
–
V
VIL
Input LOW Voltage
–
–
VREF – 0.2
V
Thermal Resistance[20]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
165 FBGA Package
Unit
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51.
16.7
°C/W
6.5
°C/W
Notes:
13. Power-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
14. All Voltage referenced to Ground.
15. Output are impedance controlled. IOH = –VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
16. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
17. Overshoot: VIH(AC) < VDDQ +0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > –1.5V (Pulse width less than tCYC/2).
18. This spec is for all inputs except C and C Clock. For C and C Clock, VIL(Max.) = VREF – 0.2V.
19. VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller.
20. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05627 Rev. *A
Page 15 of 19
CY7C1303BV25
CY7C1306BV25
Capacitance[23]
Parameter
Description
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CO
Output Capacitance
Test Conditions
Max.
TA = 25°C, f = 1 MHz,
VDD = 2.5V.
VDDQ = 1.5V
Unit
5
pF
6
pF
7
pF
AC Test Loads and Waveforms
VREF = 0.75V
0.75V
VREF
VREF
OUTPUT
Z0 = 50Ω
Device
Under
Test
RL = 50Ω
VREF = 0.75V
ZQ
0.75V
R = 50Ω
ALL INPUT PULSES
1.25V
0.75V
OUTPUT
Device
Under
Test ZQ
5 pF
[21]
0.25V
Slew Rate = 2 V/ns
RQ =
250Ω
RQ =
250Ω
(a)
(b)
Switching Characteristics Over the Operating Range [21]
167 MHz
Cypress Consortium
Parameter Parameter
tPower
[22]
Description
Min.
Max.
Unit
VCC (typical) to the First Access Read or Write
10
µs
6.0
ns
Cycle Time
tCYC
tKHKH
K Clock and C Clock Cycle Time
tKH
tKHKL
Input Clock (K/K and C/C) HIGH
2.4
ns
tKL
tKLKH
Input Clock (K/K and C/C) LOW
2.4
ns
tKHKH
tKHKH
K/K Clock Rise to K/K Clock Rise and C/C to C/C Rise
(rising edge to rising edge)
2.7
3.3
ns
tKHCH
tKHCH
K/K Clock Rise to C/C Clock Rise (rising edge to rising edge)
0.0
2.0
ns
0.7
Set-up Times
tSA
tSA
Address Set-up to Clock (K and K) Rise
tSC
tSC
Control Set-up to Clock (K and K) Rise (RPS, WPS, BWS0, BWS1)
0.7
ns
tSD
tSD
D[x:0] Set-up to Clock (K and K) Rise
0.7
ns
tHA
tHA
Address Hold after Clock (K and K) Rise
0.7
ns
tHC
tHC
Control Signals Hold after Clock (K and K) Rise (RPS, WPS, BWS0, BWS1)
0.7
ns
tHD
tHD
D[x:0] Hold after Clock (K and K) Rise
0.7
ns
ns
Hold Times
Output Times
tCO
tCHQV
C/C Clock Rise (or K/K in single clock mode) to Data Valid
tDOH
tCHQX
Data Output Hold after Output C/C Clock Rise (Active to Active)
tCHZ
tCHZ
Clock (C and C) rise to High-Z (Active to High-Z)[23, 24]
tCLZ
tCLZ
Clock (C and C) rise to
Low-Z[23, 24]
2.5
1.2
ns
2.5
1.2
ns
ns
ns
Notes:
21. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V,Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input
pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC test loads.
22. This part has a voltage regulator that steps down the voltage internally; tPower is the time power needs to be supplied above VDD minimum initially before a read
or write operation can be initiated.
23. At any given voltage and temperature tCHZ is less than tCLZ and, tCHZ less than tCO.
Document #: 38-05627 Rev. *A
Page 16 of 19
CY7C1303BV25
CY7C1306BV25
Switching Waveforms[25, 26, 27]
READ
WRITE
READ
WRITE
READ
WRITE
NOP
WRITE
NOP
1
2
3
4
5
6
7
8
9
10
K
tKH
tKL
tCYC
tKHKH
K
RPS
tSC
tHC
WPS
A
A0
tSA
D
D10
A2
A1
tHA
tSA
D11
A3
A4
A5
D31
D50
D51
tHA
D30
Q00
Q
tKHCH
tCO
Q01
tDOH
tCLZ
D60
tSD
tHD
tSD
tKHCH
A6
Q20
tDOH
D61
tHD
Q21
Q40
Q41
tCHZ
tCO
C
tKH
tKL
tKHKH
tCYC
C
DON’T CARE
UNDEFINED
Notes:
24. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
25. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1.
26. Outputs are disabled (High-Z) one clock cycle after a NOP.
27. In this example, if address A2 = A1 then data Q2 0= D10 and Q21 = D11. Write data is forwarded immediately as read results.This note applies to the whole diagram.
Document #: 38-05627 Rev. *A
Page 17 of 19
CY7C1303BV25
CY7C1306BV25
Ordering Information
“Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered”.
Speed
(MHz)
167
Package
Diagram
Ordering Code
CY7C1303BV25-167BZC
Operating
Range
Package Type
51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1306BV25-167BZC
CY7C1303BV25-167BZXC
165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead free
CY7C1306BV25-167BZXC
CY7C1303BV25-167BZI
165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1306BV25-167BZI
CY7C1303BV25-167BZXI
165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead free
CY7C1306BV25-167BZXI
Package Diagram
165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D
165-ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW
PIN 1 CORNER
BOTTOM VIEW
TOP VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 MØ0.05
CAB MC
PIN 1 CORNER
Ø0.25 M C A B
Ø0.50 -0.06
(165X)
PIN 1 CORNER
1
2
+0.14
4
2
5
3
6
4
7
5
8
6
9
7
10
11
8
9
11
10
11
10
9
11
8
10
7
9
6
8
5
7
Ø0.50 -0.06 (165X)
4
6
1
3 +0.14
2
5
4
3
2
1A
B
A
C
B
C
B
D
C
D
C
E
D
F
1.00
A
1.00
B
F
E
G
F
G
F
H
G
H
G
J
H
K
J
L
K
M
L
N
M
P
N
P
N
R
P
R
P
7.00
7.00
14.00
D
E
14.00
15.00±0.10
E
15.00±0.10
15.00±0.10
A
15.00±0.10
3
1
J
H
K
J
L
K
M
L
N
M
R
R
A
A
A
1.00
5.00
A
1.00
5.00
10.00
10.00
B
B
13.00±0.10
B
13.00±0.10
B
13.00±0.10
13.00±0.10
SEATING PLANE
NOTES :
NOTES
:
SOLDER
PAD TYPE
: NON-SOLDER MASK DEFINED (NSMD)
PACKAGE
WEIGHT
SOLDER
PAD: 0.475g
TYPE : NON-SOLDER MASK DEFINED (NSMD)
JEDEC REFERENCE
: MO-216
/ DESIGN 4.6C
PACKAGE WEIGHT
: 0.475g
PACKAGE
CODE
: BB0AC : MO-216 / DESIGN 4.6C
JEDEC
REFERENCE
PACKAGE CODE : BB0AC
51-85180-*A
0.35±0.06
C
0.35±0.06
0.36
0.36
SEATING PLANE
C
0.15 C
1.40 MAX.
1.40 MAX.
0.15(4X)
0.15 C
0.53±0.05
0.53±0.05
0.25
C
0.25 C
0.15(4X)
51-85180-*A
Quad Data Rate™ SRAM and QDR™ SRAM comprise a new family of products developed by Cypress, IDT, NEC, Renesas and
Samsung. All products and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05627 Rev. *A
Page 18 of 19
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
CY7C1303BV25
CY7C1306BV25
Document History Page
Document Title: CY7C1303BV25/CY7C1306BV25 18-Mbit Burst of 2 Pipelined SRAM with QDR™ Architecture
Document Number: 38-05627
Orig. of
Change
REV.
ECN NO.
Issue Date
**
253010
See ECN
SYT
New Data Sheet
*A
436864
See ECN
NXR
Converted from Preliminary to Final.
Removed 133 MHz & 100 MHz from product offering.
Included the Industrial Operating Range.
Changed C/C Description in the Features Section & Pin Description Table.
Changed tTCYC from 100 ns to 50 ns, changed tTF from 10 MHz to 20 MHz
and changed tTH and tTL from 40 ns to 20 ns in TAP AC Switching
Characteristics table
Modified the ZQ pin definition as follows:
Alternately, this pin can be connected directly to VDDQ, which enables the
minimum impedance mode
Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND
Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD.
Modified the Description of IX from Input Load current to Input Leakage
Current on page # 15.
Modified test condition in note# 13 from VDDQ < VDD to VDDQ ≤ VDD
Updated the Ordering Information table and replaced the Package Name
Column with Package Diagram.
Document #: 38-05627 Rev. *A
Description of Change
Page 19 of 19