HMC-AUH249 v04.0909 4 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Typical Applications Features this hMc-auh249 is ideal for: small signal Gain: 15 dB • Fiber Optic Modulator driver Output voltage: up to 8v pk-pk • Gain Block for test & Measurement equipment psat Output power: +23 dBm • point-to-point/ point-to-Multi-point radios high speed performance: >35 Ghz 3 dB Bandwidth • Wideband communication & surveillance systems supply voltage: +5v @ 200 ma • radar Warning systems small die size: 2.2 x 1.80 x 0.1 mm Optical & MOdulatOr drivers - chip • Military & space General Description Functional Diagram the hMc-auh249 is a Gaas MMic heMt distributed driver ampliier die which operates between dc and 35 Ghz and provides a typical 3 dB bandwidth of 37 Ghz. the ampliier provides 15 dB of gain and +23 dBm of saturated output power while requiring only 200 ma from a +5v supply. the hMc-auh249 exhibits very good gain and phase ripple beyond 25 Ghz and can output greater than 8v peak-topeak, making it ideal for use in broadband wireless, iber optic communication and test equipment applications. the ampliier die occupies less than 4 mm² which facilitates easy integration into Multichip-Modules (McMs). the hMc-auh249 requires a bias-tee as well as off-chip blocking components and bypass capacitors for the dc supply lines. vgg1 adjusts the bias current for the device while vgg2 adjusts the output gain. Electrical Speciications [1], TA = +25 °C, Vdd = 5V, Vgg2 = 1.5V parameter Min. Gain Bandwidth (3 dB) typ. Max. units 15 dB >35 Ghz Gain variation dc - 35 Ghz ±1 dB Group delay variation dc - 25 Ghz ±10 ps power Output at 1 dB compression dc - 5 Ghz 21 dBm power Output at saturation dc - 5 Ghz 23 dBm 8 vpp Maximum Output amplitude input return loss dc - 20 Ghz dc - 35 Ghz 15 9 dB dB Output return loss dc - 20 Ghz dc - 35 Ghz 13 7 dB dB power dissipation supply current (idd) 1 W 200 ma [1] unless otherwise indicated, all measurements are from die in a test ixture. [2] adjust vgg1 between -1.0v to 0v to achieve idd = 200 ma. 4-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or [email protected] HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Group Delay vs. Frequency Gain vs. Frequency 250 18 GROUP DELAY (psec) 14 GAIN (dB) 10 6 2 -2 230 210 4 190 170 150 -10 0 5 10 15 20 25 30 35 40 45 10 50 15 20 Input Return Loss vs. Frequency 30 35 40 Output Return Loss vs. Frequency 0 0 -5 -5 -10 -10 RETURN LOSS (dB) RETURN LOSS (dB) 25 FREQUENCY (GHz) FREQUENCY (GHz) -15 -20 -25 -30 -35 -15 -20 -25 -30 -35 -40 -40 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 FREQUENCY (GHz) 20 25 30 35 40 45 50 FREQUENCY (GHz) Fixtured Pout vs. Frequency 24 22 POUT (dBm) 20 18 16 Optical & MOdulatOr drivers - chip -6 P1dB P3dB 14 12 10 0 5 10 15 20 25 30 35 40 FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or [email protected] 4-2 HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz 12.5 Gb/s Eye Diagram [1] electrOstatic seNsitive device OBserve haNdliNG precautiONs Optical & MOdulatOr drivers - chip 4 Absolute Maximum Ratings Recommended Operating Conditions drain Bias voltage (vdd) +7 vdc rF input power +10 dBm positive supply voltage (vdd) channel temperature 180 °c positive supply current storage temperature -65 to +150 °c Bias current adjust (vgg1) -1 -0.5 0 v Operating temperature -55 to +110 °c Output voltage adjust (vgg2) 0.3 1.5 1.5 v 4 dBm parameter rF input power Min. typ. Max. units 5 6 v 200 230 ma [1] input 12.5 Gb/s data stream, 01.0v, prBs 2ˆ31-1 4-3 Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or [email protected] HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Outline Drawing Die Packaging Information [1] NOtes: 1. all diMeNsiONs are iN iNches [MM]. 2. tYpical BONd pad is .004” sQuare. standard alternate Gp-1 (Gel pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3. BacKside MetalliZatiON: GOld. 4. BacKside Metal is GrOuNd. 5. BONd pad MetalliZatiON: GOld. 6. cONNectiON NOt reQuired FOr uNlaBeled BONd pads. 7. Overall die siZe ±.002” Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or [email protected] Optical & MOdulatOr drivers - chip 4 4-4 HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Pin Descriptions Optical & MOdulatOr drivers - chip 4 4-5 pin Number Function description 1 rFiN dc coupled. Blocking cap is needed. 2 res1 ac coupled 50Ω termination. 3 vgg2 Gate control for ampliier. please follow “MMic ampliier Biasing procedure” application note. see assembly for required external components. 4 rFOut & vdd rF output and dc bias (vdd) for the output stage. 6 vgg1 Gate control for ampliier. please follow “MMic ampliier Biasing procedure” application note. see assembly for required external components. 5 res2 ac coupled 35Ω termination. die Bottom GNd die Bottom must be connected to rF/dc ground. interface schematic Application Circuit Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or [email protected] HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Assembly Diagram Optical & MOdulatOr drivers - chip 4 Note 1: drain Bias (vdd) must be applied through a broadband bias tee or external bias network Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or [email protected] 4-6 HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Device Mounting • 1 mil diameter wire bonds are used on vgg1 and vgg2 connections to the capacitors and 27Ω resistors. • 0.5mil x 3mil ribbon bonds are used on rF connections • capacitors and resistors on vgg1 and vgg2 are used to ilter low frequency, <800Mhz, rF pickup 4 • For best gain latness and group delay variation, eccosorb can be epoxied on the transmission line covering the center 3/4 of the transmission line length. eccosorb may also be placed partially across the res1 pad and 35Ω resistor for improved gain latness and group delay variation. (The insertion of the transmission line helps reduce low frequency, <10GHz, gain ripple) Optical & MOdulatOr drivers - chip • 35Ω and 50Ω resistors are fabricated on a 5mil alumina substrate and should be suitable for use as a high frequency termination. • silver-illed conductive epoxy is used for die attachment (Backside of the die should be grounded and the GND pads are connected to the backside metal through Vias) 4-7 Device Operation these devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. the input to this device should be ac-coupled. Device Power Up Instructions 1. Ground the device 2. Bring vgg1 to -0.5v (no vbias current) 3. Bring vgg2 to +1.5v (no vbias current) 4. Bring vdd to +5v (150ma to 225ma drain current) (Initially the drain current (Vbias) will rise sharply with a small Vbias voltage, but will latten out as Vbias approaches 5V) • vgg1 should be varied between -1.0v and 0v to achieve 200ma current on the drain (vbias). • vbias may be increased to +5.5v if required to achieve greater output voltage swing. • vgg2 may be adjusted between +1.5v and +0.3v to vary the output voltage swing. Device Power Down Instructions 1. reverse the sequence identiied above in steps 1 through 4. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to placeChelmsford, orders: AnalogMA Devices, Inc., For price, delivery toforplace orders: Hittite Microwave Corporation, 20 Alpha 01824 responsibility is assumed by Analogand Devices its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks areApplication the property of their respective owners. Support: Phone: 978-250-3343 or [email protected] HMC-AUH249 v04.0909 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 35 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin ilm substrates are recommended for bringing rF to and from the chip (Figure 1). if 0.254mm (10 mil) thick alumina thin ilm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: all bare die are placed in either Waffle or Gel based esd protective containers, and then sealed in an esd protective bag for shipment. Once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. dO NOt attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Follow esd precautions to protect against esd Transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ingers. Mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and lat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 °c and a tool temperature of 265 °c. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °c. dO NOt expose the chip to a temperature greater than 320 °c for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy illet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturer’s schedule. 4 Optical & MOdulatOr drivers - chip the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hMc general handling, Mounting, Bonding Note). Wire Bonding rF bonds made with 0.003” x 0.0005” ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 °c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, andRoad, to place orders: Analog Devices, For price, delivery and to for place Hittite Microwave Corporation, 20 Alpha Chelmsford, MA 01824Inc., responsibility is assumed by Analog Devices its use, orders: nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Phone: Order781-329-4700 On-line at www.hittite.com • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 978-250-3343 or [email protected] 4-8