MAC218A6FP, MAC218A8FP MAC218A10FP Preferred Devices Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. • Blocking Voltage to 800 Volts • Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Isolated TO−220 Type Package for Ease of Mounting • Gate Triggering Guaranteed in Four Modes • Indicates UL Registered − File #E69369 • Device Marking: Logo, Device Type, e.g., MAC218A6FP, Date Code http://onsemi.com ISOLATED TRIAC ( 8 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) G Rating Symbol Peak Repetitive Off−State Voltage (Note 1.) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC218A6FP MAC218A8FP MAC218A10FP VDRM, VRRM On-State RMS Current (TC = +80°C) (Note 2.) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 8.0 Amps ITSM 100 Amps I2t 40 A2s PGM 16 Watts PG(AV) 0.35 Watt Peak Gate Current (TC = +80°C, Pulse Width = 10 μs) IGM 4.0 Amps RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) ( ) V(ISO) 1500 Volts Operating Junction Temperature TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Peak Non−Repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by rated current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 10 μs) Average Gate Power (TC = +80°C, t = 8.3 ms) ) Value Unit Volts MARKING DIAGRAM 400 600 800 1 2 YY WW MAC218 AxxFP 3 ISOLATED TO−220 Full Pack CASE 221C STYLE 3 MAC218AxxFP = Specific Device Code xx = 6, 8 or 10 YY = Year WW = Work Week PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate ORDERING INFORMATION 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Device Package Shipping MAC218A6FP ISOLATED TO220FP 500/Box MAC218A8FP ISOLATED TO220FP 500/Box MAC218A10FP ISOLATED TO220FP 500/Box Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 3 1 Publication Order Number: MAC218A6FP/D MAC218A6FP, MAC218A8FP MAC218A10FP THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 μA mA − 1.7 2.0 Volts − − − − − − − − 50 50 50 75 OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25° TJ = 125°C IDRM, IRRM ON CHARACTERISTICS Peak On-State Voltage (Note 1) (ITM = "11.3 A Peak) VTM Gate Trigger Current (Continuous dc) (V D = 12 Vdc, RL = 100 Ω) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT Gate Non−Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 Ω, TJ = +125°C) All Four Quadrants Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = "200 mA) mA Volts − − − − 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 VGD 0.2 − − Volts IH − − 50 mA dv/dt(c) − 5.0 − V/μs dv/dt − 100 − V/μs DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutating Off−State Voltage (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TJ = 125°C) 1. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC218A6FP, MAC218A8FP MAC218A10FP Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 (−) MT2 Quadrant III Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM 125 PD(AV), AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) MAC218A6FP, MAC218A8FP MAC218A10FP 115 105 95 85 75 0 1 2 3 4 5 6 IT(RMS), RMS ON−STATE CURRENT (AMPS) 7 8 10 8 6 4 2 0 0 1 2 3 4 5 6 IT(RMS), RMS ON−STATE CURRENT (AMPS) VGT, NORMALIZED GATE TRIGGER VOLTAGE (VOLTS) MAIN TERMINAL VOLTAGE = 12 V 3 2 1 0.7 QUADRANT 0.5 −60 −40 −20 1 2 3 4 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 1.8 MAIN TERMINAL VOLTAGE = 12 V 1.6 1.4 QUADRANT 4 1.2 1 0.8 0.6 1 2 3 QUADRANTS 0.4 −60 Figure 3. Normalized Gate Trigger Current −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) GATE OPEN MAIN TERMINAL #1 POSITIVE 1 0.7 0.5 0.2 −60 MAIN TERMINAL #2 POSITIVE −40 −20 0 120 Figure 4. Normalized Gate Trigger Voltage 2 0.3 8 Figure 2. Power Dissipation 5 I H , NORMALIZED HOLDING CURRENT (mA) I GT, NORMALIZED GATE TRIGGER CURRENT (mA) Figure 1. Current Derating 7 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Normalized Holding Current http://onsemi.com 4 140 140 MAC218A6FP, MAC218A8FP MAC218A10FP PACKAGE DIMENSIONS TO−220 FULLPACK THYRISTOR CASE 221C−02 ISSUE D SEATING PLANE −T− −B− F C P N S E A Q H 1 2 3 −Y− K Z J L R G D 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 −−− 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 −−− 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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