Preliminary HAT1038R, HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Features • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of 4 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 7 8 D D 65 87 2 G 3 12 5 6 D D 4 G 1, 3 2, 4 5, 6, 7, 8 4 S1 MOS1 Source Gate Drain S3 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1038R HAT1038RJ Avalanche energy HAT1038R HAT1038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID Note 1 ID (pulse) IDR IAP Note 4 EAR Note 4 Pch Note 2 Note 3 Pch Tch Tstg Value –60 ±20 –3.5 Unit V V A –28 –3.5 — –3.5 — 1.05 2 A A — A — mJ W 3 150 –55 to +150 W °C °C PW ≤ 10 μs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 1 of 7 HAT1038R, HAT1038RJ Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak voltage Gate to source leak current HAT1038R Zero gate voltage drain current HAT1038RJ Zero gate voltage drain current HAT1038R HAT1038RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 2 of 7 Symbol V (BR) DSS V (BR) GSS IGSS IDSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) Min –60 ±20 — — — — — –1.2 — — 3 — — — — — — Typ — — — — — — — — 0.12 0.16 4.5 600 290 75 11 30 100 Max — — ±10 –1 –0.1 — –10 –2.2 0.15 0.23 — — — — — — — Unit V V μA μA μA μA μA V Ω Ω S pF pF pF ns ns ns tf VDF trr — — — 55 –0.98 70 — –1.28 — ns V ns IDSS IDSS Test Conditions ID = –10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –48 V, VGS = 0 Ta = 125°C VDS = –10 V, ID = –1 mA ID = –2 A, VGS = –10 V Note 5 ID = –2 A, VGS = –4 V Note 5 ID = –2 A, VDS = –10 V Note 5 VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V, ID = –2 A, VDD ≅ –30 V IF = –3.5 A, VGS = 0 Note 5 IF = –3.5 A, VGS = 0 diF/dt = 50 A/μs HAT1038R, HAT1038RJ Preliminary Main Characteristics Power vs. Temperature Derating Dr 2.0 ive er at ion Op at 1.0 ive er Dr Op 1 ion 50 100 150 Ambient Temperature 10 –10 200 0μ 1m s PW s = Op 10 era ms tio n( Operation in PW N o ≤ 1 te 6 this area is 0s limited by RDS (on) ) –3 DC –1 –0.3 –0.1 –0.03 Ta = 25°C 1 shot pulse –0.01 –1 –0.1 –0.3 0 0 10 μs –30 Drain Current 3.0 –100 ID (A) Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Channel Dissipation Pch (W) 4.0 Maximum Safe Operation Area –3 –10 –30 –100 Drain to Source Voltage VDS (V) Ta (°C) Note 6: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics –10 –10 V –5 V –4 V –8 –3.5 V Pulse Test ID (A) ID (A) –10 –3 V –4 –2 VGS = –2.5 V 0 –2 –4 –6 Drain to Source Voltage –0.4 –0.3 ID = –2 A –0.2 –1 A –0.1 –0.5 A –4 –8 –12 Gate to Source Voltage –16 –20 VGS (V) REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 3 of 7 –1 –2 –3 –4 Gate to Source Voltage –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 0 –2 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.5 25°C Tc = 75°C 0 0 –10 –8 –4 –25°C 0 0 –8 –6 Drain Current Drain Current –6 VDS = 10 V Pulse Test 1 Pulse Test 0.5 VGS = –4 V 0.2 0.1 –10 V 0.05 0.02 0.01 –0.1 –0.3 –1 –3 Drain Current –10 –30 ID (A) –100 Preliminary Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) HAT1038R, HAT1038RJ 0.5 Pulse Test 0.4 ID = –2 A –1 A 0.3 –0.5 A VGS = –4 V 0.2 –2 A 0.1 –0.5 A, –1 A –10 V 0 –40 0 40 80 Case Temperature 120 160 20 10 Tc = –25°C 5 25°C 2 75°C 1 0.5 VDS = 10 V Pulse Test 0.2 –0.1 –0.2 Tc (°C) –5 –10 2000 VGS = 0 f = 1 MHz 1000 200 Capacitance C (pF) Reverse Recovery Time trr (ns) –2 Typical Capacitance vs. Drain to Source Voltage 500 100 50 20 di / dt = 50 A / μs VGS = 0, Ta = 25°C 10 5 –0.1 –0.2 Ciss 500 100 50 –1 –2 –5 0 –10 –8 VDD = –50 V –25 V –10 V VDS –12 –16 –80 ID = –3.5 A –100 0 8 16 Gate Charge 24 32 Qg (nc) REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 4 of 7 –30 –40 –50 –20 40 VGS (V) 1000 Switching Time t (ns) VGS Gate to Source Voltage –4 –40 –20 Switching Characteristics 0 VDD = –10 V –25 V –50 V –10 Drain to Source Voltage VDS (V) IDR (A) 0 –60 Crss 20 Dynamic Input Characteristics –20 Coss 200 10 –0.5 Reverse Drain Current VDS (V) –1 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage –0.5 300 td(off) 100 tf 30 tr td(on) 10 3 V = –10 V, V = –30 V GS DD PW = 5 μs, duty ≤ 1 % 1 –0.5 –1 –2 –0.1 –0.2 Drain Current ID (A) –5 –10 HAT1038R, HAT1038RJ Preliminary Reverse Drain Current IDR (A) –10 –8 –6 –10 V VGS = 0, 5 V –4 –5 V –2 Pulse Test 0 0 –0.4 –0.8 –1.2 Source to Drain Voltage –1.6 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage –2.0 2.5 IAP = –3.5 A VDD = –25 V L = 100 μH duty < 0.1 % Rg ≥ 50 Ω 2.0 1.5 1.0 0.5 0 25 50 75 100 125 Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.001 u tp D= PDM lse o sh PW T PW T 1 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 1 D=1 0.5 0.1 0.2 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 0.0001 10 μ t ho D= PDM lse 0.001 pu PW T PW T 1s 100 μ 1m 10 m 100 m 1 Pulse Width PW (S) REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 5 of 7 150 Channel Temperature Tch (°C) VSD (V) 10 100 1000 10000 HAT1038R, HAT1038RJ Preliminary Avalanche Test Circuit Avalanche Waveform L VDS Monitor EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDD D.U.T VDS ID Vin –15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin –10 V 50 Ω VDD = –30 V Vout td(on) REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 6 of 7 10% tr 10% td(off) tf HAT1038R, HAT1038RJ Preliminary Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. e Reference Symbol A1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part Name HAT1038R-EL-E HAT1038RJ-EL-E Quantity 2500 pcs 2500 pcs REJ03G1150-0600 Rev.6.00 Aug 25, 2009 Page 7 of 7 Shipping Container Taping Taping D E A2 A1 A bp b1 c c1 Dimension in Millimeters Min Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 8° 0° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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