NTNS3A65PZ Small Signal MOSFET −20 V, −281 mA, Single P−Channel, SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package http://onsemi.com Features • Single P−Channel MOSFET • Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for • • • Extremely Thin Environments Such as Portable Electronics Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package 1.5 V Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID Max 1.3 W @ −4.5 V 2.0 W @ −2.5 V −20 V −281 mA 3.4 W @ −1.8 V 4.5 W @ −1.5 V Applications • High Side Switch • High Speed Interfacing • Optimized for Power Management in Ultra Portable Solutions P−CHANNEL MOSFET S (2) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±8 V ID −281 mA Continuous Drain Current (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C −202 −332 PD t≤5s Pulsed Drain Current 218 −842 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −130 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature D (3) mW 155 IDM tp = 10 ms G (1) MARKING DIAGRAM 3 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% 1 SOT−883 (XDFN3) CASE 506CB 65 M 65 M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NTNS3A65PZT5G SOT−883 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 0 1 Publication Order Number: NTNS3A65PZ/D NTNS3A65PZ THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RθJA 804 Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 574 Unit °C/W 3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS ID = −250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −20 V Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V VGS(TH) VGS = VDS, ID = −250 mA V 11 TJ = 25°C mV/°C −1 mA ±10 mA −1.0 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) −0.4 2.2 mV/°C VGS = −4.5 V, ID = −200 mA 0.9 1.3 VGS = −2.5 V, ID = −100 mA 1.3 2.0 VGS = −1.8 V, ID = −50 mA 1.8 3.4 VGS= −1.5 V, ID = −10 mA 2.3 4.5 Forward Transconductance gFS VDS = −5 V, ID = −200 mA 0.58 Source−Drain Diode Voltage VSD VGS = 0 V, IS = −100 mA −0.8 VGS = 0 V, freq = 1 MHz, VDS = −10 V W W S −1.2 V CHARGES & CAPACITANCES Input Capacitance CISS 44 Output Capacitance COSS 6.7 Reverse Transfer Capacitance CRSS 5.5 Total Gate Charge QG(TOT) 1.1 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = −4.5 V, VDS = −10 V; ID = −200 mA 0.1 0.2 pF nC 0.2 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 18 VGS = −4.5 V, VDD = −10 V, ID = −200 mA, RG = 2 W tf 32 178 84 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 ns NTNS3A65PZ TYPICAL CHARACTERISTICS 1.0 −4.0 V 0.7 −3.5 V 0.6 −2 V −3 V 0.5 −1.8 V 0.4 0.3 −1.5 V 0.2 0.1 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.0 0.5 1.0 1.5 2.0 2.5 TJ = 25°C 0.6 0.5 TJ = −55°C 0.4 0.3 0.2 0 1 1.5 2 2.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics TJ = 25°C ID = −200 mA 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 −VGS, GATE−TO−SOURCE VOLTAGE (V) 3 5.0 TJ = 25°C 4.5 VGS = −1.5 V 4.0 3.5 3.0 VGS = −1.8 V 2.5 VGS = −2.5 V 2.0 1.5 VGS = −4.5 V 1.0 0.5 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1000 VGS = 0 V 1.5 TJ = 125°C VGS = −4.5 V ID = −200 mA 1.4 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.5 Figure 1. On−Region Characteristics 4.5 1.0 TJ = 125°C 0.7 0.0 3.0 5.0 0.0 0.8 0.1 −1.2 V 0.0 VDS = −5 V 0.9 −ID, DRAIN CURRENT (A) 0.8 −2.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 1.0 TJ = 25°C VGS = −4.5 0.9 1.3 1.2 VGS = −1.8 V ID = −50 mA 1.1 1.0 0.9 100 TJ = 85°C 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTNS3A65PZ C, CAPACITANCE (pF) TJ = 25°C VGS = 0 V f = 1 MHz Ciss Coss Crss 0 2 4 6 8 10 12 14 16 18 20 10 4 VGS VDS 8 3 6 2 Qgs Qgd 4 VDS = −10 V ID = −0.2 V TJ = 25°C 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 0 1.1 1.2 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 10.0 −IS, SOURCE CURRENT (A) VDD = −10 V VGS = −4.5 V td(off) t, TIME (ns) 12 QT −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 100 tf tr td(on) 10 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 1 10 RG, GATE RESISTANCE (W) 1.0 TJ = −55°C 0.1 100 TJ = 125°C TJ = 25°C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1.000 0.90 10 ms −ID, DRAIN CURRENT (A) 0.80 −VGS(th) (V) ID = −250 mA 0.70 0.60 0.50 0.40 −50 100 ms 10 ms 150 VGS ≤ −8 V Single Pulse TC = 25°C 0.010 0.001 −25 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) 1 ms 0.100 dc RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Threshold Voltage Figure 12. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTNS3A65PZ R(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 900 RqJA steady state = 804°C/W 800 700 600 500 Duty Cycle = 0.5 400 300 0.01 0.02 200 0.2 100 0.1 0 0.000001 0.05 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 5 1 10 100 1000 NTNS3A65PZ PACKAGE DIMENSIONS SOT−883 (XDFN3), 1.0x0.6, 0.35P CASE 506CB ISSUE A PIN ONE REFERENCE 0.10 C ÉÉÉ 0.10 C E DIM A A1 b D D2 e E E2 L TOP VIEW NOTE 3 0.10 C 0.10 C 3X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. A B D A1 SIDE VIEW A C SEATING PLANE RECOMMENDED SOLDER FOOTPRINT* 1.10 D2 2X E2 e/2 1 e 0.10 M b C A B 0.05 M C 2X 3X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.075 0.200 0.950 1.075 0.620 BSC 0.350 BSC 0.550 0.675 0.425 0.550 0.170 0.300 L 2X 0.41 0.43 1 0.55 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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