Freescale MRF6S9130HR3 Rf power field effect transistor Datasheet

Freescale Semiconductor
Technical Data
MRF6S9130HR3/HSR3 replaced by MRFE6S9130HR3/HSR3. Refer to Device
Migration PCN12895 for more details.
RF Power Field Effect Transistors
MRF6S9130HR3
MRF6S9130HSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 48.1 dBc in 30 kHz Bandwidth
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 950 mA, Pout =
130 Watts, Full Frequency Band (921 - 960 MHz)
Power Gain — 18 dB
Drain Efficiency — 63%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 950 mA,
Pout = 56 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 18.5 dB
Drain Efficiency — 44%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 1.5% rms
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
LIFETIME BUY
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S9130HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S9130HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW
RθJC
0.45
0.51
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
°C/W
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
Document Number: MRF6S9130H
Rev. 5, 8/2008
MRF6S9130HR3 MRF6S9130HSR3
1
Table 3. ESD Protection Characteristics
Class
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
1
2.1
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)
VGS(Q)
2
2.9
4
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
VDS(on)
—
0.22
0.5
Vdc
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
66
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.6
—
pF
Characteristic
Off Characteristics
LIFETIME BUY
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
18
19.2
21
dB
Drain Efficiency
ηD
29
30.5
—
%
ACPR
—
- 48.1
- 46
dBc
IRL
—
- 30
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA,
Pout = 56 W Avg., 921 MHz<Frequency<960 MHz
Power Gain
Gps
—
18.5
—
dB
Drain Efficiency
ηD
—
44
—
%
Error Vector Magnitude
EVM
—
1.5
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 75
—
dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 130 W,
921 MHz<Frequency<960 MHz
Power Gain
Gps
—
18
—
dB
Drain Efficiency
ηD
—
63
—
%
Input Return Loss
IRL
—
- 12
—
dB
P1dB
—
135
—
W
Pout @ 1 dB Compression Point, CW
(f = 940 MHz)
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
Test Methodology
Human Body Model (per JESD22 - A114)
1. Part is internally matched on input.
MRF6S9130HR3 MRF6S9130HSR3
2
RF Device Data
Freescale Semiconductor
B2
+
+
+
VSUPPLY
L2
+
C7
Z1
Z2
C6
Z3
L1
Z4
Z5
Z9
Z6
Z7
Z10 Z11 Z12
RF
OUTPUT
Z13
Z14 Z15
Z16
Z17
C13
Z8
C8
C9
C10
C11
C12
C1
C2
LIFETIME BUY
Z1
Z2
Z3
Z4
Z5
Z6, Z11
C3
C4
0.383″ x 0.080″ Microstrip
1.250″ x 0.080″ Microstrip
0.190″ x 0.220″ Microstrip
0.127″ x 0.220″ Microstrip
0.173″ x 0.220″ Microstrip
0.200″ x 0.220″ x 0.620″ Taper
C5
Z7
Z8
Z9
Z10
Z12
Z13
DUT
0.220″ x 0.630″ Microstrip
0.077″ x 0.630″ Microstrip
0.146″ x 0.630″ Microstrip
0.152″ x 0.630″ Microstrip
0.184″ x 0.220″ Microstrip
0.261″ x 0.220″ Microstrip
Z14
Z15
Z16
Z17
PCB
0.045″ x 0.220″ Microstrip
0.755″ x 0.080″ Microstrip
0.496″ x 0.080″ Microstrip
0.384″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300- 55- 22,
0.030″, εr = 2.55
Figure 1. MRF6S9130HR3(SR3) Test Circuit Schematic
Table 5. MRF6S9130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair Rite
C1, C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2
8.2 pF Chip Capacitor
ATC100B8R2BT500XT
ATC
C3, C11
0.8- 8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4, C5
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C6
20 K pF Chip Capacitor
ATC200B203KT50XT
ATC
C7, C16, C17, C18
10 μF, 35 V Tantalum Chip Capacitors
T491D106K035AT
Kemet
C8, C9
10 pF Chip Capacitors
ATC100B7R5JT500XT
ATC
C10
11 pF Chip Capacitor
ATC100B110JT500XT
ATC
C12
0.6- 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C15
0.56 μF, 50 V Chip Capacitor
C1825C564J5GAC
Kemet
C19
470 μF, 63 V Electrolytic Capacitor
EKME630ELL471MK25S
United Chemi - Con
L1, L2
12.5 nH Inductors
A04T- 5
Coilcraft
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
C14 C15 C16 C17 C18 C19
VBIAS
RF
INPUT
+
B1
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
3
B2
900 MHz
Rev 02
C7
C6
C16 C17 C18
C15
B1
C4
C8
L1
C14
L2
C1
C2
LIFETIME BUY
C3
C5
CUT OUT AREA
C10
C12
C9
C11
Figure 2. MRF6S9130HR3(SR3) Test Circuit Component Layout
C13
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
C19
MRF6S9130HR3 MRF6S9130HSR3
4
RF Device Data
Freescale Semiconductor
32
19
30
18.5
ηD
18
Gps
17.5
28
VDD = 28 Vdc, Pout = 27 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync,
Paging, Traffic Codes 8 Through 13
26
IRL
17
−5
−46
−15
−48
16.5
16
−44
ACPR
−50
−25
−35
15.5
−52
−45
15
−54
920
−55
840
850
860
870
880
890
900
910
19.5
44
41
ηD
38
18
Gps
17.5
17
IRL
35
VDD = 28 Vdc, Pout = 54 W (Avg.)
IDQ = 950 mA, N−CDMA IS−95 Pilot, Sync
Paging, Traffic Codes 8 Through 13
−34
−5
−36
−10
−38
16.5
16 ACPR
−40
15.5
−42
15
−44
920
840
850
860
870
880
890
900
910
ACPR (dBc)
18.5
−15
−20
−25
−30
IRL, INPUT RETURN LOSS (dB)
47
19
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 54 Watts Avg.
20
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1400 mA
19
Gps, POWER GAIN (dB)
20
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg.
Gps, POWER GAIN (dB)
LIFETIME BUY
f, FREQUENCY (MHz)
1100 mA
950 mA
18
700 mA
17
500 mA
16
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
VDD = 28 Vdc, f1 = 878.75 MHz, f2 = 881.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
IDQ = 500 mA
700 mA
−40
−50
1400 mA
1100 mA
950 mA
−60
15
1
10
100
400
1
10
100
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
19.5
IRL, INPUT RETURN LOSS (dB)
34
ηD, DRAIN
EFFICIENCY (%)
20
ACPR (dBc)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
400
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
5
0
3rd Order
−30
5th Order
−40
7th Order
−60
0.1
10
1
100
−30
20
−35
19
−40
30
−45
Gps
−50
−55
ACPR
ηD
−60
100 150
0
1
51.5
VDD = 28 Vdc, IDQ = 950 mA
51
Pulsed CW, 8 μsec(on), 1 msec(off)
50.5
f = 880 MHz
50
31 31.5 32 32.5 33 33.5 34 34.5 35 35.5 36 36.5 37
Figure 8. Pulsed CW Output Power versus
Input Power
40
10
Actual
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
VDD = 28 Vdc, IDQ = 950 mA, f = 880 MHz
N−CDMA IS−95, Pilot, Sync, Paging
Traffic Codes 8 Through 13
20
52.5
52
Pin, INPUT POWER (dBm)
60
50
P1dB = 51.8 dBm (151.36 W)
TWO−TONE SPACING (MHz)
ACPR (dBc)
−50
54.5
54
53.5
53
10
70
60
Gps
18
50
17
40
16
30
15
20
VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
ηD
14
13
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Single - Carrier N - CDMA ACPR, Power
Gain and Drain Efficiency versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
20
19.5
Gps, POWER GAIN (dB)
19
18.5
18
17.5
17
16.5
32 V
28 V
16
VDD = 24 V
15.5
15
14.5
IDQ = 950 mA
f = 880 MHz
14
0
50
100
150
200
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
250
10
0
300
ηD, DRAIN EFFICIENCY (%)
−20
Ideal
P3dB = 52.54 dBm (179.47 W)
55
Pout, OUTPUT POWER (dBm)
−10
55.5
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
56
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 950 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
LIFETIME BUY
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
MRF6S9130HR3 MRF6S9130HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
107
106
105
90
110
130
150
170
190
210
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 27 W Avg., and ηD = 30.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
N - CDMA TEST SIGNAL
100
−10
−20
10
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
LIFETIME BUY
TJ, JUNCTION TEMPERATURE (°C)
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.................................................
.. .. . .
.............
..
...
...
...
..
.
.
..
..
..
..
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
.
.
Integrated BW
Integrated BW
.... .
.
.
..
...
.
................
...................
....
.....
.
.
.
..
.
.
..
.
.
.
.
.
.
.
.
.
.
. .......
.
...... .
...........
................
........
..............
.........
..
.
.........
....
.
.
.
.
..........
.
....................
...............
.
.
..
.
.
.
.
.
..
....
.
.............
.
−ACPR
in
30
kHz
+ACPR
in
30
kHz
.
.
.
...
..
.
.
.
.
.
.
.
.
.....................
.
.
.....
......
Integrated BW
Integrated BW
................
......
..............
.....
...
........
.......
...
−100
PEAK−TO−AVERAGE (dB)
Figure 13. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
f, FREQUENCY (MHz)
Figure 14. Single - Carrier N - CDMA Spectrum
3.6
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
MTTF (HOURS)
108
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
7
Zload
f = 850 MHz
Zo = 2 Ω
f = 910 MHz
LIFETIME BUY
Zsource
f = 850 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
850
0.89 - j1.18
1.50 - j0.09
865
0.87 - j1.03
1.52 + j0.11
880
0.85 - j0.89
1.55 + j0.31
895
0.83 - j0.75
1.60 + j0.51
910
0.84 - j0.64
1.68 + j0.71
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
LAST ORDER 3 APR 08 LAST SHIP 1 OCT 08
f = 910 MHz
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S9130HR3 MRF6S9130HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF6S9130HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF6S9130HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S9130HR3 MRF6S9130HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
5
Aug. 2008
Description
• Listed replacement part and Device Migration notification reference number, p. 1
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use of maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
MRF6S9130HR3 MRF6S9130HSR3
10
RF Device Data
Freescale Semiconductor
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MRF6S9130HR3 MRF6S9130HSR3
Document
RF
DeviceNumber:
Data MRF6S9130H
Rev. 5, 8/2008
Freescale
Semiconductor
11
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