Preliminary Datasheet BCR5FM-12LB 600V - 5A - Triac R07DS0960EJ0001 Rev.0.01 Nov 19, 2012 Medium Power Use Features Insulated Type Planar Passivation Type Viso: 2000 V IT (RMS) : 5 A VDRM : 600 V Tj: 150°C IFGTI, IRGTI, IRGT: 20 mA (10mA) Note5 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Switching mode power supply, small motor control, heater control, solenoid driver, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter Voltage class 12 600 720 Symbol VDRM VDSM Unit V V Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 5 A Commercial frequency, sine full wave 360 conduction, Tc = 121C Surge on-state current ITSM 50 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2 t 10.4 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 3 0.3 10 2 –40 to +150 –40 to +150 1.9 2000 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Note6 R07DS0960EJ0001 Rev.0.01 Nov 19, 2012 Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute T1 T2 G terminal to case Page 1 of 3 BCR5FM-12LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.8 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 7A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 20 Note5 20 Note5 20 Note5 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 5 1 — — — — — — — 3.8 — — V V C/W V/s V/s Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltageNote4 Notes: 1. 2. 3. 4. 5. 6. Rth (j-c) (dv/dt)c Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Tj = 150C Gate open. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. High sensitivity (IGT 10 mA) is also available (IGT item: 1). Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125/150C 2. Rate of decay of on-state commutating current (di/dt)c = –2.5A/ms 3. Peak off-state voltage VD = 400 V R07DS0960EJ0001 Rev.0.01 Nov 19, 2012 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 3 BCR5FM-12LB Preliminary Package Dimensions Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g Unit: mm 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 12.98 ± 0.30 15.87 ± 0.20 3.18 ± 0.10 Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number BCR5FM-12LB#BB0 BCR5FM-12LB-A8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. Remark Straight type A8 Lead form Please confirm the specification about the shipping in detail. R07DS0960EJ0001 Rev.0.01 Nov 19, 2012 Page 3 of 3 Notice 1. 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