PD - 91862D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) IRHM57260 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57260 100K Rads (Si) RDS(on) 0.049Ω ID 35A* IRHM53260 300K Rads (Si) 0.049Ω 35A* IRHM54260 600K Rads (Si) 0.049Ω 35A* IRHM58260 1000K Rads (Si) 0.050Ω 35A* International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 35* 32 140 250 2.0 ±20 500 35 25 10 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) g * Current is limited by internal wire diameter For footnotes refer to the last page www.irf.com 1 01/30/03 IRHM57260 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 200 — — V — 0.26 — V/°C — — 0.049 Ω 2.0 40 — — — — — — 4.0 — 10 25 V S( ) — — — — — — — — — — — — — — — — — — — 6.8 100 -100 155 45 75 35 125 80 50 — ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Typ Max Units Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 32A ➃ nC VDS = VGS, I D = 1.0mA VDS > 15V, IDS = 32A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 100V ns VDD = 100V, ID = 35A VGS =12V, RG = 2.35Ω Ω BVDSS µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 7580 920 60 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 35* 140 1.2 450 6.0 Test Conditions A V ns µC Tj = 25°C, IS = 35A, VGS = 0V ➃ Tj = 25°C, IF = 35A, di/dt ≥ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by internal wire diameter Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.50 0.21 — — 48 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHM57260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-254) Diode Forward Voltage ➃ Test Conditions 200 2.0 — — — — — 4.0 100 -100 10 0.044 200 1.25 — — — — — 4.0 100 -100 25 0.045 nA µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 160V, VGS =0V VGS = 12V, ID =32A — 0.049 — 0.050 Ω VGS = 12V, ID =32A — 1.2 1.2 V VGS = 0V, I S = 35A — V 1. Part numbers IRHM57260, IRHM53260 and IRHM54260 2. Part number IRHM58260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2) 36.7 59.8 82.3 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 200 200 150 100 50 32.5 200 100 40 35 30 28.4 50 35 25 — — Energy (MeV) 309 341 350 250 VDS 200 150 Br I Au 100 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM57260 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 5.0V 10 20µs PULSE WIDTH T = 25 C 1 5.0V 10 10 TJ = 25 ° C 100 TJ = 150 ° C V DS = 50V 20µs PULSE WIDTH 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 3.0 6.5 10 100 Fig 2. Typical Output Characteristics 1000 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 5.5 ° J 1 0.1 100 VDS , Drain-to-Source Voltage (V) 10 5.0 20µs PULSE WIDTH T = 150 C ° J 1 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP D = 35A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 Ciss 8000 6000 Coss 4000 2000 C rss 20 VGS , Gate-to-Source Voltage (V) 12000 C, Capacitance (pF) IRHM57260 0 1 10 D = 35A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 40 80 120 160 200 240 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ISD , Reverse Drain Current (A) VDS = 160V VDS = 100V VDS = 40V 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(ON) D , Dra n Current (A) 100 TJ = 150 ° C 10 TJ = 25 ° C 10us 10 100us 1ms 1 1 V GS = 0 V 0.1 0.2 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.2 Tc = 25°C Tj = 150°C Single Pulse 10ms 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM57260 Pre-Irradiation 50 RD VDS LIMITED BY PACKAGE VGS I D , Drain Current (A) 40 D.U.T. RG + -VDD 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM57260 1 5V L VDS D .U .T. RG IA S VGS TOP 1000 D R IV E R + - VD D 0 .0 1 Ω tp EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit BOTTOM 800 600 400 200 0 25 V (B R )D SS ID 16A 22A 35A 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V 2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM57260 Pre-Irradiation Footnotes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 0.82 mH Peak IL = 35A, VGS = 12V ➂ I SD ≤ 35A, di/dt ≤ 410A/µs, VDD ≤ 200V, TJ ≤ 150°C 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA 0 12 [ 005] 20 32 [ 800] 20 07 [ 790] 1 C 2 13 84 [ 545] 13 59 [ 535] B 1 27 [ 050] 1 02 [ 040] A 22 73 [ 895] 21 21 [ 835] 20 32 [ 800] 20 07 [ 790] 17 40 [ 685] 16 89 [ 665] 1 3 17 40 [ 685] 16 89 [ 665] 6 60 [ 260] 6 32 [ 249] 13 84 [ 545] 13 59 [ 535] 3 78 [ 149] 3 53 [ 139] 1 27 [ 050] 1 02 [ 040] A 17 40 [ 685] 16 89 [ 665] 0 12 [ 005] 6 60 [ 260] 6 32 [ 249] 13 84 [ 545] 13 59 [ 535] 3 78 [ 149] 3 53 [ 139] 0 84 [ 033] MAX 4 82 [ 190] 3 81 [ 150] 2 13 84 [ 545] 13 59 [ 535] B R 1 52 [ 060] 3 4 06 [ 160] 3 56 [ 140] 1 14 [ 045] 0 89 [ 035] 3X 3 81 [ 150] 3X 3 81 [ 150] 1 14 [ 045] 0 89 [ 035] 0 36 [ 014] 2X 3 81 [ 150] NOTES : 1. 2. 3. 4. 2X 0 36 [ 014] B A B A PIN AS S IGNMENTS DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONTROLLING DIMENS ION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. 1 = DRAIN 2 = S OURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/03 8 www.irf.com