PHILIPS BF904AWR N-channel dual gate mos-fet Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF904A; BF904AR; BF904AWR
N-channel dual gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
FEATURES
BF904A; BF904AR; BF904AWR
PINNING
• Specially designed for use at 5 V
supply voltage
PIN
• Short channel transistor with high
transfer admittance to input
capacitance ratio
1
source
2
drain
3
gate 2
4
gate 1
• Low noise gain controlled amplifier
up to 1 GHz
DESCRIPTION
handbook, 2 columns
4
1
2
Top view
• Superior cross-modulation
performance during AGC.
MSB014
BF904A marking code: M41.
Fig.1
APPLICATIONS
• VHF and UHF applications with
3 to 7 V supply voltage such as
television tuners and professional
communications equipment.
3
handbook, 2 columns
3
4
Simplified outline
(SOT143B).
3
halfpage
4
DESCRIPTION
Enhancement type field-effect
transistors. The transistors consist of
an amplifier MOS-FET with source
and substrate interconnected and an
internal bias circuit to ensure good
cross-modulation performance during
AGC.
The BF904A, BF904AR and
BF904AWR are encapsulated in the
SOT143B, SOT143R and SOT343R
plastic packages respectively.
2
1
2
Top view
MSB035
BF904AR marking code: M42.
Fig.2
Simplified outline
(SOT143R).
1
Top view
MSB842
BF904AWR marking code: MH.
Fig.3
Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
7
V
ID
drain current
−
−
30
mA
Ptot
total power dissipation
−
−
200
mW
Ts ≤ 110 °C
yfs
forward transfer admittance
22
25
30
mS
Cig1-ss
input capacitance at gate 1
−
2.2
2.6
pF
Crss
reverse transfer capacitance
f = 1 MHz
−
25
35
fF
F
noise figure
f = 800 MHz
−
2
−
dB
Tj
operating junction temperature
−
−
150
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 May 14
2
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
7
V
ID
drain current
−
30
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Ts ≤ 110 °C; note 1; see Fig.4
Note
1. Ts is the temperature of the soldering point of the source lead.
MGL615
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0
50
100
150
200
Ts (°C)
Fig.4 Power derating curve.
1999 May 14
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
VALUE
UNIT
200
K/W
note 1
Note
1. Soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-S = 10 mA
6
15
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 10 mA
6
15
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S = 4 V; VDS = 5 V; ID = 20 µA
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S = VDS = 5 V; ID = 20 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S = 4 V; VDS = 5 V;
RG1 = 120 kΩ; note 1
8
13
mA
IG1-SS
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = 5 V
−
50
nA
IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 5 V
−
50
nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.21.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj = 25 °C
22
25
30
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
−
2.2
2.6
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1
1.5
2
pF
Cos
drain-source capacitance
f = 1 MHz
1
1.4
1.7
pF
Crs
reverse transfer capacitance f = 1 MHz
−
25
35
fF
F
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt
−
1
1.5
dB
f = 800 MHz; GS = GSopt; BS = BSopt
−
2
2.8
dB
1999 May 14
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
MLD268
40
MRA769
0
handbook,
gain halfpage
Y fs
(mS)
reduction
(dB)
10
30
20
20
30
40
10
50
0
50
0
50
100
150
o
T j ( C)
0
1
2
3
4
VAGC (V)
f = 50 MHz.
Fig.5
Transfer admittance as a function of the
junction temperature; typical values.
Fig.6
Typical gain reduction as a function of
the AGC voltage; see Fig.21.
MRA771
120
MLD270
20
handbook, halfpage
Vunw
V G2 S = 4 V
ID
(dB µV)
3V
2.5 V
(mA)
110
15
100
10
2V
1.5 V
90
5
1V
80
0
10
20
30
0
40
50
gain reduction (dB)
0
0.4
0.8
1.2
1.6
2.0
V G1 S (V)
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
Fig.7
VDS = 5 V.
Tj = 25 °C.
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.21.
1999 May 14
Fig.8 Transfer characteristics; typical values.
5
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
MLD269
MLD271
20
150
handbook, halfpage
handbook, halfpage
V G1 S = 1.4 V
ID
(mA)
16
V G2 S = 4 V
3.5 V
I G1
(µA)
1.3 V
3V
100
1.2 V
12
1.1 V
8
2.5 V
1.0 V
50
2V
0.9 V
4
0
0
0
2
4
6
8
10
V DS (V)
0
0.5
1.0
1.5
2.0
2.5
V G1 S (V)
VDS = 5 V.
Tj = 25 °C.
VG2-S = 4 V.
Tj = 25 °C.
Fig.10 Gate 1 current as a function of gate 1
voltage; typical values.
Fig.9 Output characteristics; typical values.
MLD273
MLD272
16
40
handbook, halfpage
handbook, halfpage
y fs
(mS)
ID
(mA)
V G2 S = 4 V
12
30
3.5 V
3V
20
8
2.5 V
4
10
2V
0
0
0
4
8
12
16
0
20
I D (mA)
10
20
30
40
50
I G1 (µA)
VDS = 5 V.
VDS = 5 V.
Tj = 25 °C.
VG2-S = 4 V.
Tj = 25 °C.
Fig.11 Forward transfer admittance as a
function of drain current; typical values.
1999 May 14
Fig.12 Drain current as a function of gate 1 current;
typical values.
6
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
MLD274
MLD275
20
12
handbook, halfpage
handbook, halfpage
R G1 = 47 kΩ
ID
ID
68 kΩ
82 kΩ
(mA)
(mA)
15
100 kΩ
8
120 kΩ
150 kΩ
10
180 kΩ
220 kΩ
4
5
0
0
0
1
2
3
4
0
5
2
4
VGG (V)
6
V GG = V DS (V)
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.21.
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.14 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values.
Fig.13 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
MLD276
12
MLB945
40
handbook, halfpage
handbook, halfpage
V GG = 5 V
4.5 V
ID
I G1
(µA)
4V
(mA)
V GG = 5 V
30
3.5 V
8
8
4.5 V
3V
4V
3.5 V
20
3V
4
10
0
0
2
4
V G2 S (V)
0
6
0
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
4
V G2 S (V)
6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.15 Drain current as a function of gate 2 voltage;
typical values.
1999 May 14
2
Fig.16 Gate 1 current as a function of gate 2
voltage; typical values.
7
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
MLD277
10 2
handbook, halfpage
MLD278
10 3
y is
(mS)
10 3
ϕ rs
(deg)
y rs
(µS)
ϕ rs
10 2
10
10 2
y rs
b is
1
10
10
g is
10 1
10
102
f (MHz)
1
1
10 3
10
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.17 Input admittance as a function of frequency;
typical values.
MLD279
10 2
y fs
(mS)
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
handbook, halfpage
yos
(mS)
ϕ fs
(deg)
y fs
MGL614
10
10 2
bos
1
ϕ fs
10
10
10−1
10−2
10
1
1
10
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
102
f (MHz)
103
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.19 Forward transfer admittance and phase as
a function of frequency; typical values.
1999 May 14
gos
Fig.20 Output admittance as a function of
frequency; typical values.
8
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
VAGC
R1
10 k Ω
C1
4.7 nF
C2
R GEN
50 Ω
R2
50 Ω
C3
DUT
4.7 nF
12 pF
L1
≈ 450 nH
RL
50 Ω
C4
R G1
4.7 nF
VI
VGG
V DS
Fig.21 Cross-modulation test set-up.
1999 May 14
9
MLD171
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
Table 1
f
(MHz)
BF904A; BF904AR; BF904AWR
Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C
S21
S11
S12
S22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
40
0.989
−3.2
2.52
175.9
0.001
87.9
0.989
−1.7
100
0.987
−7.9
2.52
169.4
0.001
86.1
0.988
−4.3
200
0.976
−15.7
2.47
159.2
0.003
81.4
0.984
−8.6
300
0.972
−23.3
2.43
150.5
0.004
80.5
0.985
−12.7
400
0.947
−30.6
2.36
139.6
0.005
76.9
0.975
−16.9
500
0.925
−37.6
2.26
130.3
0.005
75.6
0.968
−20.8
600
0.905
−44.4
2.19
121.1
0.005
75.5
0.961
−24.7
700
0.883
−50.9
2.10
112.3
0.006
78.0
0.954
−28.4
800
0.861
−57.0
2.01
103.6
0.006
85.3
0.946
−32.0
900
0.841
−63.0
1.93
95.5
0.006
90.7
0.934
−35.6
1000
0.822
−68.4
1.85
87.8
0.006
102.6
0.931
−39.3
1200
0.787
−78.9
1.71
72.3
0.007
127.1
0.923
−46.7
1400
0.752
−88.1
1.59
57.3
0.011
143.7
0.926
−54.2
1600
0.723
−97.3
1.47
40.1
0.019
150.0
0.935
−62.2
1800
0.685
−106.3
1.36
25.0
0.021
149.4
0.931
−69.3
2000
0.665
−114.0
1.31
7.7
0.026
151.5
0.930
−77.7
2200
0.659
−119.8
1.30
−14.0
0.035
158.2
0.944
−89.1
2400
0.670
−124.2
1.26
−42.2
0.050
163.4
0.941
−103.5
2600
0.700
−129.3
1.10
−78.2
0.076
162.2
0.849
−119.7
2800
0.729
−138.7
0.82
−120.8
0.106
150.5
0.642
−130.9
3000
0.726
−150.1
0.52
−162.8
0.128
137.4
0.480
−130.6
Table 2
Noise data: VDS = 5 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
Rn
(Ω)
800
2.0
0.686
49.6
50.4
1999 May 14
10
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1999 May 14
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-03-10
SOT143R
1999 May 14
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343R
1999 May 14
EUROPEAN
PROJECTION
13
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 14
14
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
NOTES
1999 May 14
15
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TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/03/pp16
Date of release: 1999 May 14
Document order number:
9397 750 05271
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