HIRECT H445CHXX Phase control thyristor Datasheet

PHASE CONTROL THYRISTOR H445CHXX
Symbol
Characteristics
Conditions
TJ
(0C)
Value
Unit
125
200-1600
V
125
200-1600
V
125
125
50
50
mA
mA
445
A
700
A
4.60
kA
106
kA2S
BLOCKING PARAMETERS
VRRM
VDRM
IRRM
IDRM
Repetitive
Repetitive
voltage
Repetitive
Repetitive
peak reverse voltage
peak off-stage
peak reverse current
peak off-state current
V = VRRM
V = VRRM
CONDUCTING PARAMETERS
IF(AV)
Average on-state current
IRMS
RMS on-state current
ITSM
Surge on-state current
I2 t
I2 t
VT
Peak on-state voltage drop
V0
R0
Threshold voltage
On-state slope resistance
180 sine, 50H Z,
TC = 690C
Sine wave,
10mS without
reverse voltage
125
On-state
current = 1.2kA
125
2.07
V
125
125
0.85
0.90
V
mΩ
25
25
25
200
2.00
600
mA
V
mA
150
W
150
12
30
A/μSec
V
A
TRIGGERING PARAMETERS
IGT
VGT
IL
PG–PEAK
di/dt
VFGM
IFGM
Gate trigger current
Gate trigger voltage
Latching Current
Maximum Peak Gate Power
VD = 5V
VD = 5V
Pulse width
100μSec
Repetitive rate of rise of current
Maximum forward gate voltage
Maximum forward gate current
THERMAL & MECHANICAL PARAMETERS
R TH (J-C)
Thermal impedance, 180
conduction, Sine
RTH (C-HK)
Thermal impedance
TJ
TSTG
F
W
Junction to case
0.068
0
C/W
Case to
heatsink
0.015
0
C/W
Maximum Permissible junction
temperature
Storage temperature range
Mounting Torque
Weight
HIND RECTIFIERS LTD
125
-40 - 125
5
70
0
C
C
KN
gms
0
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PHASE CONTROL THYRISTOR H445CHXX
All dimensions in mm
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PHASE CONTROL THYRISTOR H445CHXX
On State Power Loss
1100
DC
1000
900
0
120 180
Pt(av) - W
800
600
700
600
500
400
300
200
100
0
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
It (av)
Maximum Permissible Case Temp
140
120
Tcase (0C)
100
80
60
40
600
20
1200
1800
DC
0
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750
It(av) A
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PHASE CONTROL THYRISTOR H445CHXX
Max non repetitive Surge Current
5000
Itsm (A)
4000
3000
2000
1000
0
0.01
0.1
1
10
Tim e in Sec
Transient Thermal Impedance Junction to Case
0.08
0.07
0.06
Rth(j-c)
0.05
0.04
0.03
0.02
0.01
0
0.001
0.01
0.1
1
10
Tim e in Sec
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PHASE CONTROL THYRISTOR H445CHXX
On State Characteristics
2000
1800
1600
1200
1000
800
600
400
200
0
0
0.5
1
1.5
2
2.5
3
3.5
Vt (V)
Gate Trigger Characteristics
100
10
VG(V) - V
It(av) A
1400
1
150W
(0.1mS)
0
25 C
0.1
0.01
0.1
1
10
100
IG (av) - A
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PHASE CONTROL THYRISTOR H445CHXX
Ordering Information: H
Hirect make Thyristor
445
IF(AV) = 445A
CH
Capsule Thyristor
XX
VRRM = XX * 100
e.g.12 * 100 =1200V
Hind Rectifiers Ltd reserves the right to change the specifications without
notice.
This datasheet specifies technical information for semiconductor devices but
promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
Hind Rectifiers Ltd
Lake Road
Bhandup (West)
Mumbai – 400 078
Tel: - +91 22 2596 8027/28/29/31
Fax: - +91 22 2596 4114
E-mail: - [email protected]
Website: - www.hirect.com
HIND RECTIFIERS LTD
June-2008
6 of 6
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