GE BC817 Small signal transistors (npn) Datasheet

BC817, BC818
Small Signal Transistors (NPN)
FEATURES
SOT-23
♦ NPN Silicon Epitaxial Planar Transistors
.122 (3.1)
.118 (3.0)
.016 (0.4)
♦ Especially suited for automatic insertion
.056 (1.43)
.052 (1.33)
3
in thick- and thin-film circuits.
♦ These transistors are subdivided into three groups -16,
2
.016 (0.4)
-25 and -40 according to their current gain.
.045 (1.15)
.037 (0.95)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
max. .004 (0.1)
1
for switching, AF driver and amplifier
applications.
Top View
♦ As complementary types, the PNP transistors BC807
and BC808 are recommended.
MECHANICAL DATA
.102 (2.6)
.094 (2.4)
.016 (0.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
Type
BC817-16
-25
-40
BC818-16
-25
-40
Marking
6A
6B
6C
6E
6F
6G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Emitter Voltage
BC817
BC818
VCES
VCES
50
30
V
V
Collector-Emitter Voltage
BC817
BC818
VCEO
VCEO
45
25
V
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Peak Collector Current
I CM
1000
mA
Peak Base Current
IBM
200
mA
Peak Emitter Current
–IEM
1000
mA
Power Dissipation at TSB = 50 °C
Ptot
3101)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
– 65 to +150
°C
1)
4/98
Device on fiberglass substrate, see layout
BC817 THRU BC818
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
hFE
hFE
hFE
100
160
250
60
100
170
–
–
–
–
–
–
250
400
600
–
–
–
–
–
–
–
–
–
Thermal Resistance Junction Substrate
Backside
RthSB
–
–
3201)
K/W
Thermal Resistance Junction to Ambient Air
RthJA
–
–
4501)
K/W
Collector Saturation Voltage
at IC = 500 mA, IB = 50 mA
VCEsat
–
–
0.7
V
Base-Emitter Voltage
at VCE = 1 V, IC = 300 mA
VBE
–
–
1.2
V
ICES
ICES
ICES
–
–
–
–
–
–
100
100
5
nA
nA
µA
Emitter-Base Cutoff Current
at VEB = 4 V
IEBO
–
–
100
nA
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
fT
–
100
–
MHz
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHz
CCBO
–
12
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group-16
-25
-40
-16
at VCE = 1 V, IC = 300 mA
-25
-40
Collector-Emitter Cutoff Current
at VCE = 45 V
at VCE = 25 V
at VCE = 25 V, Tj = 150 °C
1)
BC817
BC818
Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.06 (1.5)
Dimensions in inches (millimeters)
.20 (5.1)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
pF
RATINGS AND CHARACTERISTIC CURVES BC817, BC818
RATINGS AND CHARACTERISTIC CURVES BC817, BC818
RATINGS AND CHARACTERISTIC CURVES BC817, BC818
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