N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 10 V 4.5 0.036 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 2.3 nC APPLICATIONS • Battery Switch • DC/DC Converter TO-236 (SSOT23) G 1 S 2 3 D Top View DTS6400 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Limit 60 ± 20 4.5 1.8 ID 2.9b, c 1.5b, c 8 1.39 0.91b, c 6 1.8 1.66 1.06 1.09b, c 0.7b, c - 55 to 150 IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter ≤5s Maximum Junction-to-Ambientb, d Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 130 °C/W. Symbol RthJA RthJF Typical 90 60 Maximum 115 75 Unit °C/W 1 MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 55 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V -5 1 8 µA A VGS = 10 V, ID = 1.9 A 0.019 0.026 VGS = 4.5 V, ID = 1.7 A 0.026 0.036 VDS = 15V, ID = 1.9 A 5 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 190 tr Rise Time td(off) Turn-Off Delay Time VDS = 30 V, VGS = 4.5 V, ID = 1.9 A f = 1 MHz VDD = 30 V, RL = 20 Ω ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 30 V, RL = 20 Ω ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω tf Fall Time 4.5 6.8 2.3 3.5 0.8 nC 1 tf Fall Time pF 15 VDS = 30 V, VGS = 10 V, ID = 1.9 A td(on) Turn-On Delay Time 26 VDS = 30 V, VGS = 0 V, f = 1 MHz 0.6 2.8 5.6 4 6 10 15 10 15 7 10.5 15 23 16 24 11 17 11 17 Ω ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 2.39 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 8 IS = 1.5 A IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 15 23 ns 10 15 nC 12 3 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) VGS = 4 V 6 4 3 TC = - 55 °C 2 TC = 125 °C 1 2 VGS = 3 V TC = 25 °C VGS = 2 V 0 0 1 2 3 4 0 0.0 5 0.7 2.1 2.8 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 300 240 0.24 VGS = 4.5 V 0.18 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.4 VGS = 10 V 180 120 0.12 60 Coss 0.06 Crss 0 0 2 4 6 8 10 0 10 20 30 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 60 2.0 8 VGS = 10 V, ID = 4.5 A 6 VDS = 48 V 4 2 (Normalized) 1.7 VDS = 30 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 4.5 A 1.4 VGS = 4.5 V, ID = 1.7 A 1.1 0.8 0 0 1 2 3 4 5 0.5 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 3 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.35 10 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.5 A TJ = 25 °C 1 0.1 0.0 0.30 TJ = 125 °C 0.25 0.20 TJ = 25 °C 0.15 0.10 0.2 0.4 0.6 0.8 1.0 3 1.2 4 5 VSD - Source-to-Drain Voltage (V) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.4 10 8 2.1 Power (W) VGS(th) (V) ID = 250 µA 1.8 TA = 25 °C Single Pulse 6 4 1.5 2 1.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 Threshold Voltage Single Pulse Power 10 Limited by R DS(on)* I D - Drain Current (A) 100 µs 1 1 ms 10 ms 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 1 s, 10 s DC 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 4 10 Time (s) TJ - Temperature (°C) 100 100 600 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 I D - Drain Current (A) 4 30 2 1 0.0 25 0 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 2.0 1.2 1.6 Power (W) Power (W) 0.9 1.2 0.8 0.6 0.3 0.4 0.0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot . 6 1 10 Package Information www.din-tek.jp SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.95 BSC 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 1 Application Note www.din-tek.jp 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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