MITSUBISHI Nch POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 700V ¡rDS (ON) (MAX) .............................................................. 9.75Ω ¡ID ............................................................................................ 2A e TO-220 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg — (Tc = 25°C) Parameter Conditions Drain-source voltage VGS = 0V Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature VDS = 0V Storage temperature Weight Typical value Ratings Unit 700 ±30 V V 2 6 65 A A W –55 ~ +150 –55 ~ +150 2 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) Limits Test conditions VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω IS = 1A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 700 ±30 — — — — — — ±10 V V µA — 2 — — — 3 7.47 7.47 1 4 9.75 9.75 mA V Ω 0.72 — — — 1.2 270 30 5 — — — — — — — — 10 12 33 21 — — — — — 1.0 1.5 — — 1.92 V S pF pF pF ns ns ns ns V °C/W PERFORMANCE CURVES DRAIN CURRENT ID (A) 80 60 40 20 0 0 50 100 150 101 7 5 3 2 tw = 10ms 100ms 100 7 5 3 2 1ms 10ms 10–1 7 5 3 2 TC = 25°C Single Pulse 10–2 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 2.0 TC = 25°C Pulse Test PD = 65W 4 VGS = 20V 10V 3 2 5V 1 TC = 25°C Pulse Test VGS = 20V 10V 1.6 5V 1.2 0.8 4.5V 0.4 4V 4V 0 0 100ms DC CASE TEMPERATURE TC (°C) 5 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ID = 3A 30 20 2A 10 1A 0 4 8 12 16 VGS = 10V 20V 12 8 4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 TC = 25°C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 1 VDS = 10V Pulse Test 3 2 TC = 25°C 100 7 5 125°C 75°C 3 2 0 4 8 12 16 10–1 –1 10 20 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Ciss 102 7 5 3 2 Coss 101 7 5 3 Tch = 25°C 2 f = 1MHZ 100 16 DRAIN CURRENT ID (A) 4 0 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5 DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 40 0 CAPACITANCE Ciss, Coss, Crss (pF) 20 TC = 25°C Pulse Test Crss VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 50 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 103 7 5 3 2 102 7 5 3 2 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) tr 101 7 5 3 2 100 –1 10 tf td(on) 2 3 4 5 7 100 2 3 4 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 250V 12 400V 600V 8 4 0 4 8 12 16 6 75°C 25°C 2 0 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 –50 0 50 100 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 CHANNEL TEMPERATURE Tch (°C) 0.4 TC = 125°C 4 GATE CHARGE Qg (nC) 101 7 5 10–1 VGS = 0V Pulse Test 8 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) 10 Tch = 25°C ID = 2A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch– c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D = 1.0 2 0.5 100 7 0.2 5 0.1 3 2 10–1 7 5 3 2 PDM 0.05 0.02 tw 0.01 T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999