IMBD4148-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diodes 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade 1 • Material categorization: For definitions of compliance www.vishay.com/doc?99912 2 MECHANICAL DATA Case: SOT-23 please see Weight: approx. 8.1 mg Packaging codes/options: 18/10K per 13” reel (8 mm tape), 10K/box 08/3K per 7” reel (8 mm tape), 15K/box PARTS TABLE PART IMBD4148-G ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS IMBD4148-G3-08 or IMBD4148-G3-18 Single diode AH Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 75 V VRM 100 V f 50 Hz IF(AV) 150 mA Surge forward current t < 1 s, Tj = 25 °C IFSM 500 mA Power dissipation (1) up to Tamb = 25 °C Ptot 350 mW SYMBOL VALUE UNIT RthJA 450 K/W Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Reverse voltage Peak reverse voltage Rectified current (average) half wave rectification with resist. (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air TEST CONDITION (1) Junction temperature Note (1) Device on fiberglass substrate, see layout on next page. Rev. 1.1, 15-May-13 Document Number: 85882 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4148-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Leakage current Diode capacitance Reverse recovery time TEST CONDITION SYMBOL IF = 10 mA VF MIN. TYP. MAX. 1.0 UNIT V VR = 70 V IR 2500 nA VR = 70 V, Tj = 150 °C IR 50 μA VR = 25 V, Tj = 150 °C IR 30 μA VF = VR = 0 CD 4 pF IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns LAYOUT FOR RthJA TEST Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10000 T j = 100 ° C 100 10 25 ° C 1 0.1 0.01 rf - Dynamic Forward Resistance (Ω) I F - Forward Current ( mA ) 1000 T j = 25 ° C f = 1 kHz 1000 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 18661 VF - Forward Voltage ( V ) Fig. 1 - Forward Current vs. Forward Voltage Rev. 1.1, 15-May-13 18662 10 1 0.01 0.1 1 10 IF - Forward Current (mA) 100 Fig. 2 - Dynamic Forward Resistance vs. Forward Current Document Number: 85882 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4148-G Ptot - Admissible Power Dissipation ( mW ) www.vishay.com Vishay Semiconductors 10000 I R - Leakage Current ( nA ) 500 400 300 200 100 0 0 100 10 VR = 20 V 1 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature ( °C ) 18663 0 18665 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature CD (VR)/CD (0 V) - Relative Capacitance (pF) 1000 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature ( ° C ) Fig. 5 - Leakage Current vs. Junction Temperature T j = 25 ° C f = 1 MHz 1.1 1.0 0.9 0.8 0.7 0 2 4 6 8 10 VR - Reverse Voltage (V) 18664 Fig. 4 - Relative Capacitance vs. Reverse Voltage 100 Peak Forward Current ( A ) I FRM - Admissible Repetitive I 18666 10 ν= 0 ν = t p /T tp T = 1/f p I FRM t T 0.1 0.2 1 0.1 10 -5 0.5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length ( s ) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.1, 15-May-13 Document Number: 85882 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IMBD4148-G www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.1, 15-May-13 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document Number: 85882 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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