EIC FBR3502 Fast recovery Datasheet

FBR3500 - FBR3510
FAST RECOVERY
BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 35 Amperes
BR50
FEATURES :
*
*
*
*
*
*
0.728(18.50)
0.688(17.40)
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.570(14.50)
0.530(13.40)
MECHANICAL DATA :
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
FBR FBR FBR FBR FBR FBR FBR
3500 3501 3502 3504 3506 3508 3510
50
100 200 400 600 800 1000
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc = 55 °C
IF(AV)
35
A
IFSM
400
A
I2t
VF
660
1.3
A2S
V
IR
10
µA
IR(H)
200
µA
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 17.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Trr
150
250
500
V
ns
RθJC
10
°C/W
TJ
- 50 to + 150
°C
TSTG
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
2 ) Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( FBR3500 - FBR3510 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5
+
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/200 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
400
35
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
28
21
14
7
Tc = 55 °C
360
240
160
80
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
0
25
50
75
100
125
150
175
1
CASE TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
FORWARD CURRENT, AMPERES
4
6
10
20
40
60
100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
10
1.0
Pulse W idth = 300 µs
2% Duty Cycle
0.1
2
NUMBER OF CYCLES AT 60Hz
TJ = 25 °C
PER DIODE
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
Similar pages