ASI ASI10646 Npn silicon rf power transistor Datasheet

TVU012
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 8L FLG
DESCRIPTION:
C
D
The ASI TVU012 is Designed for
FULL R
G
FEATURES:
O
F
E
.1925
• Input Matching Network
•
• Omnigold™ Metalization System
.125
K
35 V
.115 / 2.92
.065 / 1.65
D
140 W @ TC = 25 C
O
O
TJ
-65 C to +200 C
TSTG
-65 OC to +150 OC
θ JC
O
.125 / 3.18
.360 / 9.14
C
O
inches / mm
.030 / 0.76
.075 / 1.91
.130 / 3.30
E
VCE
MAXIMUM
inches / mm
B
10 A
60 V
J
MINIMUM
A
VCB
4 x .060 R
I
N
MAXIMUM RATINGS
IC
H
L M
DIM
PDISS
A
B
F
.380 / 9.65
.390 / 9.91
G
.735 / 18.67
.765 / 19.43
H
.645 / 16.38
.655 / 16.64
I
.895 / 22.73
.905 / 22.99
J
.420 / 10.67
.430 / 10.92
K
.003 / 0.08
.007 / 0.18
L
.120 / 3.05
.130 / 3.30
M
.159 / 4.04
.175 / 4.45
.280 / 7.11
N
.395 / 10.03
O
.405 / 10.29
ORDER CODE: ASI10646
1.6 C/W
CHARACTERISTICS
SYMBOL
O
TC = 25 C
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
IC = 1.0 A
PG
IMD1
VCE = 26.5 V
POUT = 12 W
IC = 2 X 0.85 mA
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
35
V
60
V
4.0
V
10
f = 860 MHz
UNITS
9.0
-52
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5
mA
100
--dB
dBc
REV. A
1/1
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