ON NSS60201LT1G Npn transistor Datasheet

NSS60201LT1G
60 V, 4.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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60 VOLTS, 4.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 70 mW
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
140
Vdc
Emitter-Base Voltage
VEBO
8.0
Vdc
2
2.0
A
A
SOT−23 (TO−236)
CASE 318
STYLE 6
Rating
Collector Current − Continuous
IC
Collector Current − Peak
ICM
4.0
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
3
1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
Characteristic
PD (Note 1)
460
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540
mW
4.3
mW/°C
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
October, 2016 − Rev. 3
1
VJ
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm2, 1 oz. copper traces.
2. FR− 4 @ 500 mm2, 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2007
VJ M G
G
1
Device
Package
Shipping†
NSS60201LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60201L/D
NSS60201LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
60
−
−
140
−
−
8.0
−
−
−
−
0.1
−
−
0.1
160
160
150
100
−
−
−
−
−
−
350
−
−
−
−
−
−
−
0.020
0.075
0.140
−
0.790
0.900
−
0.760
0.900
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 10 mA)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
V
V
V
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Cibo
−
−
380
pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
Cobo
−
−
45
pF
td
−
−
55
ns
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
100
ns
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
1100
ns
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
120
ns
SWITCHING CHARACTERISTICS
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
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2
NSS60201LT1G
325
300
0.35
VCE(sat) VOLTAGE (V)
0.30
HFE, DC CURRENT GAIN
IC/IB = 10
0.25
150°C
0.20
25°C
0.15
−55°C
0.10
0.05
0
0.001
0.01
0.10
1.0
IC, COLLECTOR CURRENT (A)
150°C (5.0 V)
275
250
225
150°C (2.0 V)
25°C (5.0 V)
200
175
150
25°C (2.0 V)
−55°C (5.0 V)
125
100
75
−55°C (2.0 V)
50
25
0.001
10
Figure 1. Collector−Emitter Saturation Voltage
1.2
HFE, DC CURRENT GAIN
VBE(sat) VOLTAGE (V)
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0
0
0.1
1.0
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
10
0.01
0.10
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. VBE(sat)
Figure 4. VBE(on)
10
400
1.0
IC = 10 mA
Cibo, INPUT CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10
Figure 2. DC Current versus Collector Current
1.2
0.8
100 mA
0.6
500 mA
0.4
300 mA
0.2
0
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
0
0.0001
0.001
0.01
350
325
300
275
250
225
200
175
0.1
TJ = 25°C
375
0
IB, BASE CURRENT (A)
1
2
3
4
VEB, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
Figure 6. Input Capacitance
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3
5
6
NSS60201LT1G
10
60
TJ = 25°C
55
IC, COLLECTOR CURRENT (A)
Cobo, OUTPUT CAPACITANCE (pF)
65
50
45
40
35
30
25
20
15
10
0
5
10
15
20
25
30
1 ms
Thermal Limit
0.1
100 ms
0.01
0.001
35
1s
1
10 ms
0.10
10
10
VCB, COLLECTOR BASE VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
Single Pulse Test @ Tamb = 255C
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4
100
NSS60201LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSS60201L/D