DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 DS100BR410 Low Power Quad Channel Repeater with 10.3125 Gbps Equalizer and DeEmphasis Driver Check for Samples: DS100BR410 FEATURES APPLICATIONS • • • • • 1 2 • • • • • • • • • • Quad channel repeater for up to 10.3125 Gbps Low power consumption, with option to power down unused channels Adjustable receive equalization Adjustable transmit de-emphasis Adjustable transmit VOD (up to 1200 mVp-p) IDLE detection — squelch function auto mutes the output for SATA/SAS OOB signal <0.22 UI of residual DJ at 10.3125 Gbps with 12 meters cable Programmable via pin selection or SMBus interface Single supply operation at 2.5 V ±5% -40°C to +85°C Operation ≥7 kV HBM ESD Rating High speed signal flow–thru pinout package: 48-pin WQFN (7 mm x 7 mm, 0.5 mm pitch) High-speed active copper cable modules FR-4 Backplanes 10GE, 8GFC, 10GFC, 10G SONET, SAS, SATA, and InfiniBand DESCRIPTION The DS100BR410 is an extremely low power, high performance quad-channel repeater for high-speed serial links with data rates up to 10.3125 Gbps. The device performs both receive equalization and transmit de-emphasis on each of its 4 channels to compensate for channel loss, allowing maximum flexibility of physical placement within a system. The receiver's continuous time linear equalizer (CTLE) is capable of opening an input eye that is completely closed due to inter-symbol interference (ISI) induced by the interconnect medium such as backplane trace or cable. The transmitter features adjustable VOD (output amplitude voltage level) and de-emphasis driver to compensate for PCB trace lost. With a low power consumption and control to turn-off unused channels, the DS100BR410 is part of TI's PowerWise family of energy efficient devices. The programmable settings can be applied via pin mode or SMBus mode interface. Typical Application Diagram Interconnect Cable ASIC/ FPGA DS100BR410 Slice 1 of 4 DS100BR410 Slice 1 of 4 ASIC/ FPGA 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010–2013, Texas Instruments Incorporated DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com VDD SD0 EN0 SD1 EN1 SD2 EN2 SD3 EN3 BST_2 45 44 43 42 41 40 39 38 37 OOB_DIS 47 46 RES 48 Connection Diagram IN_0+ 1 36 OUT_0+ IN_0- 2 35 OUT_0- VDD 3 34 GND IN_1+ 4 33 OUT_1+ IN_1- 5 32 OUT_1- VDD 6 31 GND VDD 7 30 GND DS100BR410 IN_2+ 8 29 OUT_2+ IN_2- 9 28 OUT_2- VDD 10 27 GND IN_3+ 11 26 OUT_3+ IN_3- 12 25 OUT_3- 23 24 GND 22 19 VOD_SEL GND 18 BST_0 17 SDC SDA 21 16 CS 20 15 VDD DE_SEL 14 BST_1 PIN_MODE 13 VDD TOP VIEW DAP = GND Pin Descriptions Pin Name Pin # I/O, Type (1) Description HIGH SPEED DIFFERENTIAL I/O IN_0+ IN_0– 1 2 I, CML Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω terminating resistor connects IN_0+ to IN_0-. IN_1+ IN_1– 4 5 I, CML Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω terminating resistor connects IN_1+ to IN_1-. IN_2+ IN_2– 8 9 I, CML Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω terminating resistor connects IN_2+ to IN_2-. IN_3+ IN_3– 11 12 I, CML Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω terminating resistor connects IN_3+ to IN_3-. OUT_0+ OUT_0– 36 35 O, CML Inverting and non-inverting CML differential outputs from the driver. An on-chip 100Ω terminating resistor connects OUT_0+ to OUT_0-. OUT_1+ OUT_1– 33 32 O, CML Inverting and non-inverting CML differential outputs from the driver. An on-chip 100Ω terminating resistor connects OUT_1+ to OUT_1-. OUT_2+ OUT_2– 29 28 O, CML Inverting and non-inverting CML differential outputs from the driver. An on-chip 100Ω terminating resistor connects OUT_2+ to OUT_2-. OUT_3+ OUT_3– 26 25 O, CML Inverting and non-inverting CML differential outputs from the driver. An on-chip 100Ω terminating resistor connects OUT_3+ to OUT_3-. 2.5V LVCMOS CONTROL PINS BST_2 BST_1 BST_0 37 14 23 I, LVCMOS BST_2, BST_1, and BST_0 select the equalizer boost level for all channels. BST_2 and BST_1 are internally pulled high. BST_0 is internally pulled low. See Table 1 EN0 EN1 EN2 EN3 44 42 40 38 I, LVCMOS Enable channel n input. When held High, normal operation is selected. When held Low, standby mode is selected. EN is internally pulled High. (1) 2 Note: I = Input O = Output, LVCMOS pins are 2.5 V levels only, only SMBus pins SDA, SDC and CS are 3.3V tolerant. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 Pin Descriptions (continued) Pin Name Pin # I/O, Type (1) Description PIN_MODE 21 I, LVCMOS Pin mode control input. When held High, device is in Pin control mode. When held Low, device is in SMBus Control Mode PIN_MODE is internally pulled High. SD0 SD1 SD2 SD3 45 43 41 39 O, LVCMOS Signal detect n output. Output is High when signal is detected. Output is Low when signal is NOT detected. OOB_DIS 47 I, LVCMOS OOB disable control input. When held High, OOB is disabled. When held Low, OOB is enabled. Out Of Band (OOB) for SATA/SAS applications is active. OOB_DIS is internally pulled Low. Analog Input Pins (4–level Inputs) VOD_SEL 19 I, analog Differential Output Voltage Select Input Tie to VDD, VOD = 1.2 Vp-p Leave Open, VOD = 1.0 Vp-p Resistor (20 kΩ) to GND, VOD = 800 mVp-p Tie to GND, VOD = 600 mVp-p DE_SEL 20 I, analog De-Emphasis Select Input Tie to VDD = -9 dB Leave Open = -6 dB Resistor (20 kΩ) to GND = -3 dB Tie to GND = 0 dB SERIAL MANAGEMENT BUS (SMBus) INTERFACE SDA 18 I/O, LVCMOS Data Input / Open Drain Output External pull-up resistor is required. Pin is 3.3 V LVCMOS tolerant. SDC 17 I, LVCMOS Clock Input Pin is 3.3 V LVCMOS tolerant. CS 16 I, LVCMOS Chip Select When high, access to the SMBus registers are enabled. When low, access to the SMBus registers are disabled. Please refer to “SMBus configuration Registers” section for detail information. Pin is 3.3 V LVCMOS tolerant. VDD 3, 6, 7, 10, 13, 15, 46 Power VDD = 2.5 V ± 5% GND 22, 24, 27, 30, 31, 34 Power Ground reference. DAP PAD Power Ground reference. The exposed pad at the center of the package must be connected to ground plane of the board with at least 4 via to lower the ground impedance and improve the thermal performance of the package. RES 48 NC POWER Reserved – Do not connect These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 3 DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 Absolute Maximum Ratings www.ti.com (1) Supply Voltage (VDD) -0.5V to +2.75V 2.5 I/O Voltage (LVCMOS and Analog Input) -0.5V to +2.75V 3.3 LVCMOS I/O Voltage (SDA, SDC, CS) -0.5V to +4.0V CML Input Voltage (IN_n+/-) -0.5V to +2.75V CML Output Voltage (OUT_n+/-) -0.5V to +2.75V Junction Temperature +150°C Storage Temperature -65°C to +150°C ESD Rating HBM, STD - JESD22-A114F ≥7 kV MM, STD - JESD22-A115-A ≥200 V ≥1250 V CDM, STD - JESD22-C101-D Thermal Resistance θJA, No Airflow, 4 layer JEDEC, 9 thermal vias 27.6 °C/W For soldering specifications: see product folder at www.ti.com http://www.ti.com/lit/SNOA549 (1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Recommended Operating Conditions (1) Min Typ Max Units 2.375 2.5 2.625 V -40 25 +85 °C Supply Voltage VDD to GND Ambient Temperature (1) The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Electrical Characteristics Over recommended operating supply and temperature ranges with default register settings unless other specified. Parameter Test Conditions Min (1) Typ Max Units Device Output Enabled (EN[3:0] = High), VOD_SEL = open (1.0 Vp-p) 220 275 mW Device Output Disable (EN[3:0] = Low) 25 40 mW 50 Hz to 100 Hz 100 mVP-P 100 Hz to 10 MHz 40 mVP-P 10 MHz to 5.0 GHz 10 mVP-P POWER PD Power Supply Consumption PSNT Supply Noise Tolerance (2) 2.5 LVCMOS DC Specifications VIH High Level Input Voltage 1.75 VDD V VIL Low Level Input Voltage -0.3 0.7 V VOH High Level Output Voltage IOH = -3mA VOL Low Level Output Voltage IOL = 3mA 0.4 V IIN Input Leakage Current VIN = VDD +10 μA VIN = GND (1) (2) 4 2.0 -10 V μA Typical values represent most likely parametric norms at VDD = 2.5V, TA = 25°C., and at the Recommended Operation Conditions at the time of product characterization and are not ensured. Specification is ensured by characterization at optimal boost setting and is not tested in production. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 Electrical Characteristics (continued) Over recommended operating supply and temperature ranges with default register settings unless other specified. (1) Parameter IIN-P Test Conditions Min Typ Input Leakage Current with Internal VIN = VDD, with internal pull-down Pull-Down/Up Resistors resistors VIN = GND, with internal pull-up resistors Max Units +65 μA μA -50 Signal Detect SDH Signal Detect ON Threshold Level Default input signal level to assert SD pin, 10.3125 Gbps SDL Signal Detect OFF Threshold Level Default input signal level to deassert SD, 10.3125 Gbps 130 mVp-p 60 mVp-p CML Receiver Inputs (IN_n+, IN_n-) VTX RLI Source Transmit Launch Signal Level (IN diff) AC-Coupled Requirement, Differential measurement at point A. Figure 1 Differential Input Return Loss SDD11 100 MHz – 6 GHz, with fixture’s effect de-embedded 600 1600 mVP-P -15 dB CML Driver Outputs (OUT_n+, OUT_n-) Output Differential Voltage Level (3), Differential measurement with Figure 2 OUT+ and OUT- terminated by 50Ω to GND, AC-Coupled, VOD_SEL = open (1.0 Vp-p), DE_SEL = GND VOD 750 Differential measurement with OUT+ and OUT- terminated by 50Ω to GND, AC-Coupled, VOD_SEL = VDD (1.2 Vp-p), DE_SEL = GND VOD_DE tR, tF RLO De-Emphasis Levels (4) (5) Transition Time 1150 mVP-P 1140 mVP-P DE_SEL = 20kΩ to GND, VOD_SEL = VDD (1.2 Vp-p) -3 dB DE_SEL = open, VOD_SEL = VDD (1.2 Vp-p) -6 dB DE_SEL = VDD, VOD_SEL = VDD (1.2 Vp-p) -9 dB 20% to 80% of differential output voltage, measured within 1” from output pins. Figure 2 Differential Output Return Loss SDD22 100 MHz – 6 GHz, with fixture’s effect de-embedded. IN+ = static high. tPLHD Differential Low to High Propagation Delay tPHLD Differential High to Low Propagation Delay Propagation delay measurement at 50% crossing between input to output, 100 Mbps. Figure 3 tCCSK Inter Pair Channel to Channel Skew tPPSK RJ (3) (4) (5) (6) 970 30 38 45 ps -15 dB 240 ps 240 ps Difference in 50% crossing between channels 7 ps Part to Part Output Skew Difference in 50% crossing between outputs 20 ps Random Jitter VTX = 1.0 Vp-p, BST_[2:0] = 000, 0.3 psrms (4) (6) Measured with clock-like {11111 00000} pattern. Measured with clock-like {11111 00000} pattern. The de-emphasis level of −3 dB, −6 dB, −9 dB are for VOD = 1.2 Vp-p. At lower VOD level, the de-emphasis levels are reduced. Random jitter contributed by the equalizer is defined as sqrt (JOUT2 – JIN2). JOUT is the random jitter at equalizer outputs in ps-rms, see point C of Figure 1; JIN is the random jitter at the input of the equalizer in ps-rms, see point B of Figure 1. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 5 DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com Electrical Characteristics (continued) Over recommended operating supply and temperature ranges with default register settings unless other specified. (1) Parameter Test Conditions Min Typ Max Units 0.10 0.22 UIP-P 0.07 0.12 UIP-P Equalization DJ1 DJ2 Residual Deterministic Jitter at 10.3125 Gbps VTX = 1.0 VP-P, 12 meter 30 AWG cable, EQ = 03F'h (BST[2:0] = 111), PRBS-7 (27-1) pattern. (7) Residual Deterministic Jitter at 6.0 Gbps VTX = 1.0 VP-P, 12 meter 30 AWG cable, EQ = 07F'h, PRBS-7 (27-1) pattern. (7) Signal DETECT and ENABLE Timing tZISD Input OFF to ON detect — SD Output High Response Time tIZSD Input ON to OFF detect — SD Output Low Response Time tOZOED EN High to Output ON Response Time tZOED EN Low to Output OFF Response Time (7) Response time measurement at VIN to SD output, VIN = 800 mVP-P, 100 Mbps, 40” of 6 mil microstrip FR4. Figure 4 Response time measurement at EN input to VO, VIN = 800 mVP-P, 100 Mbps, 40” of 6 mil microstrip FR4. Figure 5 35 ns 400 ns 150 ns 5 ns Deterministic jitter is measured at the differential outputs (point C of Figure 1), minus the deterministic jitter before the test channel (point A of Figure 1). Random jitter is removed through the use of averaging or similar means. Electrical Characteristics — Serial Management Bus Interface Over recommended operating supply and temperature ranges unless other specified. Parameter Test Conditions (1) Min Typ Max Units 0.8 V VDD V Serial Bus Interface DC Specifications VIL Data, Clock Input Low Voltage VIH Data, Clock Input High Voltage IPULLUP Current Through Pull-Up Resistor or Current Source VDD Nominal Bus Voltage ILEAK-Bus Input Leakage Per Bus Segment ILEAK-Pin Input Leakage Per Device Pin CI Capacitance for SDA and SDC See (2) RTERM External Termination Resistance pull to VDD = 2.5V ± 5% OR 3.3V ± 10% VDD3.3, (2) (3) VDD2.5, (2) (3) 2.1 High Power Specification See (2) 4 mA 2.375 3.6 V -200 +200 µA -15 (3) Serial Bus Interface Timing Specifications – (See Figure 6) µA 10 pF 2000 Ω 1000 Ω (4) (5) FSMB Bus Operating Frequency 10 100 kHz TBUF Bus Free Time Between Stop and Start Condition 4.7 µs THD:STA Hold time after (Repeated) Start Condition. After this period, the first clock is generated. 4.0 µs At IPULLUP, Max TSU:STA Repeated Start Condition Setup Time 4.7 µs TSU:STO Stop Condition Setup Time 4.0 µs THD:DAT Data Hold Time 300 ns (1) (2) (3) (4) (5) 6 Typical values represent most likely parametric norms at VDD = 2.5V, TA = 25°C., and at the Recommended Operation Conditions at the time of product characterization and are not ensured. Maximum termination voltage should be identical to the device supply voltage. Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1 SMBus common AC specifications for details. Recommended value. Parameter not tested in production. Recommended maximum capacitance load per bus segment is 400pF. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 Electrical Characteristics — Serial Management Bus Interface (continued) Over recommended operating supply and temperature ranges unless other specified. (1) Parameter Test Conditions Min Typ Max Units TSU:DAT Data Setup Time 250 ns TLOW Clock Low Period 4.7 µs THIGH Clock High Period 4.0 50 µs tF Clock/Data Fall Time 300 ns tR Clock/Data Rise Time 1000 ns tPOR Time in which a device must be operational after power-on reset 500 ms AC WAVEFORMS AND TEST CIRCUITS 1/4 DS100BR410 Signal Source Media A Media B TPA TPB Scope TPC TPD Figure 1. Test Setup Diagram 80% 80% 0V OUT diff = (OUT+) ± (OUT-) 20% 20% tR tF Figure 2. Output Transition Times IN diff 0V tPLHD OUT diff tPHLD 0V Figure 3. Propagation Delay Timing Diagram Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 7 DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com IN diff 0V tIZSD tZISD VDD SD 50% 50% 0V Figure 4. Signal Detect (SD) Delay Timing Diagram VDD EN 50% 50% 0V tOZED tZOED 0V OUT diff Figure 5. Enable (EN) Delay Timing Diagram CS tSU;CS SDA tLOW tf tHD;STA tr tf tr tBUF tSP SDC tSU;STA tHD;STA tHD;DAT START tHIGH tSU;STO tSU;DAT STOP REPEATED START START Figure 6. SMBus Timing Parameters 8 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 FUNCTIONAL DESCRIPTION DS100BR410 Functional Descriptions The DS100BR410 is a Low Power Quad Channel Repeater with Equalizer and De-Emphasis Driver optimized for operation up to 10.3125 Gbps for backplane and cable applications. DATA CHANNELS The DS100BR410 provides four data channels. Each data channel consists of an equalizer stage, a limiting amplifier, a DC offset correction block, and a CML driver as shown in Figure 7. 1 of 4 Channels - DS100BR410 EQ OUTBUF LIMITER IN_n+ OUT_n+ IN_n- OUT_n- BST[2] BST[1] BST[0] SMBus SMBus IDLE DET SMBus OOB_DIS VOD_SEL DE_SEL ENn SDn PIN_Mode SMBus CS SDC SDA Figure 7. Simplified Block Diagram EQUALIZER BOOST CONTROL Each data channel support eight programmable levels of equalization boost. The state of the PIN_MODE control input determines how the boost settings are controlled. If PIN_MODE is held High, then the equalizer boost setting is controlled by the Boost Set pins (BST_[2:0]) in accordance with Table 1. If this programming method is chosen, then the boost setting selected on the Boost Set pins is applied to all channels. When PIN_MODE is held Low, the equalizer boost level is controlled through the SMBus. This programming method is accessed via the appropriate SMBus registers (see Table 4). Using this approach, equalizer boost settings can be programmed for each channel individually. PIN_MODE is internally pulled High, therefore if left open, the boost settings are controlled by the Boost Set pins (BST_[2:0]). The eight levels of boost settings enables the DS100BR410 to address a wide range of media loss and data rates. Table 1. Boost / EQ Pin Mode Configuration SMBus Register Bits Inputs Result @ 5 GHz BST_2 BST_1 BST_0 [8:0] 0 0 0 000000000 2.7 dB 0 0 1 000000001 7.3 dB 0 1 0 000000011 12.2 dB 0 1 1 000000111 16.6 dB 1 0 0 000001111 20.6 dB 1 0 1 000011111 24.8 dB 1 1 0 000101111 27.6 dB (default) 1 1 1 000111111 28.9 dB Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 9 DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com SIGNAL DETECT The DS100BR410 features a signal detect circuit on each data channel. The status of the signal of each channel can be determined by either reading the Signal Detect bit (SDn) in the SMBus registers (see Table 4) or by the state of each SDn pin. An output logic high indicates the presence of a signal that has exceeded the ON threshold value (called SDH). An output logic Low means that the input signal has fallen below the OFF threshold value (called SDL). These values are programmed via the SMBus. If not programmed via the SMBus, the thresholds take on the default values. The Signal Detect threshold values can be changed through the SMBus. All threshold values specified are DC peak-to-peak differential signals (positive signal minus negative signal) at the input of the device. OUTPUT LEVEL CONTROL The output amplitude of the CML drivers can be controlled via the 4–level analog input VOD_SEL pin or via SMBus (see Table 4). The default VOD level is 1.0 Vp-p. Table 2. VOD_SEL Pin Configuration VOD_SEL Pin Result Tie High - VDD 1.2 Vp-p Open* (default) 1.0 Vp-p 20 kΩ resistor to GND 800 mVp-p Tie to GND 600 mVp-p OUTPUT DE-EMPHASIS CONTROL The output De-Emphasis may be controled via the 4–level analog input DE_SEL pin or via SMBus (see Table 4). Table 3. DE_SEL Pin Configuration DE_SEL Pin Result Tie High - VDD -9 dB Open* (default) -6 dB 20 kΩ resistor to GND -3 dB Tie to GND 0 dB AUTOMATIC ENABLE FEATURE It may be desirable to place unused channels in power-saving Standby mode. This can be accomplished by connecting the Signal detect (SDn) pin to the Enable (ENn) pin for each channel (See Figure 7). System Management Bus (SMBus) and Configuration Registers The System Management Bus interface is compatible to SMBus 2.0 physical layer specification. The use of the Chip Select signal is required. Holding the CS pin High enables the SMBus port allowing access to the configuration registers. Holding the CS pin Low disables the device's SMBus allowing communication from the host to other slave devices on the bus. In the STANDBY state, the System Management Bus remains active. When communication to other devices on the SMBus is active, the CS signal for the DS100BR410s must be driven Low. The address byte for all DS100BR410s is AC'h. Based on the SMBus 2.0 specification, the DS100BR410 has a 7-bit slave address of 1010110'b. The LSB is set to 0'b (for a WRITE), thus the 8-bit value is 1010 1100'b or AC'h. The SDA, SDC and CS pins are 3.3V tolerant, but are not 5V tolerant. External pull-up resistor is required on the SDA. The resistor value can be from 1 kΩ to 5 kΩ depending on the voltage, loading and speed. The SDC and CS may also require an external pull-up resistor and it depends on the Host that drives the bus. Transfer of Data via the SMBus During normal operation the data on SDA must be stable during the time when SDC is High. 10 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 There are three unique states for the SMBus: START: A High-to-Low transition on SDA while SDC is High indicates a message START condition. STOP: A Low-to-High transition on SDA while SDC is High indicates a message STOP condition. IDLE: If SDC and SDA are both High for a time exceeding tBUF from the last detected STOP condition or if they are High for a total exceeding the maximum specification for tHIGH then the bus will transfer to the IDLE state. SMBus Transactions The device supports WRITE, Burst WRITE, READ. and Burst READ transactions. See Table 4 for register address, type (Read/Write, Read Only), default value and function information. Writing a Register To 1. 2. 3. 4. 5. 6. 7. 8. 9. write a register, the following protocol is used (see SMBus 2.0 specification). The Host (Master) selects the device by driving its SMBus Chip Select (CS) signal High. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE. The Device (Slave) drives the ACK bit (“0”). The Host drives the 8-bit Register Address. The Device drives an ACK bit (“0”). The Host drive the 8-bit data byte. The Device drives an ACK bit (“0”). The Host drives a STOP condition. The Host de-selects the device by driving its SMBus CS signal Low. The WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices may now occur. Reading a Register To read a register, the following protocol is used (see SMBus 2.0 specification). 1. The Host (Master) selects the device by driving its SMBus Chip Select (CS) signal High. 2. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE. 3. The Device (Slave) drives the ACK bit (“0”). 4. The Host drives the 8-bit Register Address. 5. The Device drives an ACK bit (“0”). 6. The Host drives a START condition. 7. The Host drives the 7-bit SMBus Address, and a “1” indicating a READ. 8. The Device drives an ACK bit “0”. 9. The Device drives the 8-bit data value (register contents). 10. The Host drives a NACK bit “1”indicating end of the READ transfer. 11. The Host drives a STOP condition. 12. The Host de-selects the device by driving its SMBus CS signal Low. The READ transaction is completed, the bus goes IDLE and communication with other SMBus devices may now occur. Information on the Registers The status registers 01'h to 03'h provide information of the channel that is selected. The information provided are the OOB_DIS, EN, EQ Boost, VOD and DEM bits of the selected channel. By default, channel 0 is selected. In order to change the selected channel, write to reg_07 bit[5:4]. Write a 1 to reg_07 bit[0] is also needed to allow the registers 13'h to 1A'h to control the channel EN and EQ boost bits of each of the channels. Each channel can be individually enabled (EN) and set to a desired boost level with these registers. Please refer to Table 4 for additional information. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 11 DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com Table 4. DS100BR410 Register Map ADD (hex) 00 01 REG Name Device ID Bit(s) Field Type Default (binary) 7:4 Device ID R 3 SD_CH3 R 1: Signal detected on CH3 0: No signal 2 SD_CH2 R 1: Signal detected on CH2 0: No signal 1 SD_CH1 R 1: Signal detected on CH1 0: No signal 0 SD_CH0 R 1: Signal detected on CH0 0: No signal Status Register 7 for OOB_DIS, EN 6 and Boost_bit[8] Reserved R OOB_DIS R 5 Reserved R 4 EN R 3:1 Reserved R 0 Boost_bit[8] R Boost_bit[8] Boost_bit[7:0] 02 Status Register for Boost_bit[7:0] 7:0 Boost_bit[7:0] R 03 Status Register for VOD[5:4] and DEM[1:0] 7:6 Reserved R 5:4 VOD[5:4] R 3:2 Reserved R 1:0 DEM[1:0] R 0010 EN 1: Channel Enabled 0: Channel Disabled VOD[5:4] 00 = 0.6 Vp-p 01 = 0.8 Vp-p 10 = 1.0 Vp-p 11 = 1.2 Vp-p DEM[1:0] 00 = 0 dB 01 = -3 dB 10 = -6 dB 11 = -9 dB Reserved 7:0 Reserved R 00 05 Signal Detect Assert Threshold 7:6 SD_ON_CH3 R/W 00 5:4 SD_ON_CH2 R/W 00 3:2 SD_ON_CH1 R/W 00 1:0 12 Device ID Value OOB_DIS 1: OOB Disabled 0: OOB Enabled 04 06 Description SD_ON_CH0 R/W 00 Signal Detect De- 7:6 assert Threshold 5:4 SD_OFF_CH3 R/W 00 SD_OFF_CH2 R/W 00 3:2 SD_OFF_CH1 R/W 00 1:0 SD_FF_CH0 R/W 00 Submit Documentation Feedback Signal Detect ON Threshold 00 = 130 mV 01 = 125 mV 10 = 150 mV 11 = 140 mV Signal Detect OFF Threshold 00 = 60 mV 01 = 40 mV 10 = 105 mV 11 = 90 mV Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 Table 4. DS100BR410 Register Map (continued) ADD (hex) 07 08 REG Name Port/Channel Select and Enable SMBus Registers Driver VOD Control Bit(s) Field Default (binary) Type 7:6 Reserved R/W 00 5:4 Port/Channel Select for Status R/W 00 3:1 Reserved R/W 000 0 SMBUS Channel EN and EQ R/W boost 0 7 Reserved R/W 0 6:4 Reserved R/W 111 3:2 VOD Control R/W 10 1:0 Reserved R/W 00 Description Select port/channel [1:0] to report status in REG_01 to REG_03 00 = port0 (CH0) 01 = port1 (CH1) 10 = port2 (CH2) 11 = port3 (CH3) Channel EN and EQ Boost through pins or smbus REG_13 to REG_1A 0 = Channel EN[3:0] and EQ BST[2:0] boost set by external pins 1 = Allow channel EN and EQ boost to be set by SMBus Register bits: REG_13 to REG_1A 00 01 10 11 = 0.6 = 0.8 = 1.0 = 1.2 Vp-p Vp-p Vp-p Vp-p 00 01 10 11 = 0 dB = -3 dB = -6 dB = -9 dB 09 – 10 Reserved 7:0 Reserved R/W 00000000 11 De-Emphasis Control 7:6 DEM_CH3 R/W 00 5:4 DEM_CH2 R/W 00 3:2 DEM_CH1 R/W 00 1:0 DEM_CH0 R/W 00 7:3 Reserved R/W 00000 2:1 Reserved R/W 11 0 OOB Signal Detect Control R/W 0 7:5 Reserved R/W 000 4 Channel Enable R/W 1 3:1 Reserved R/W 000 0 Boost[8] R/W 0 See Table 5 See Table 5 12 13 OOB Signal Detect Control Channel 3 EN and EQ Control 0 = OOB signal detect enabled 1 = OOB signal detect disabled 0 = Disabled 1 = Enabled 14 EQ Control Channel 3 7:0 Boost[7:0] R/W 00000000 15 Channel 2 EN and EQ Control 7:5 Reserved R/W 000 4 Channel Enable R/W 1 3:1 Reserved R/W 000 0 Boost[8] R/W 0 See Table 5 See Table 5 0 = Disabled 1 = Enabled 16 EQ Control Channel 2 7:0 Boost[7:0] R/W 00000000 17 Channel 1 EN and EQ Control 7:5 Reserved R/W 000 4 Channel Enable R/W 1 3:1 Reserved R/W 000 0 Boost[8] R/W 0 See Table 5 7:0 Boost[7:0] R/W 00000000 See Table 5 18 EQ Control Channel 1 0 = Disabled 1 = Enabled Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 13 DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com Table 4. DS100BR410 Register Map (continued) ADD (hex) 19 REG Name Channel 0 EN and EQ Control 1A EQ Control Channel 0 Bit(s) Field Default (binary) Type Description 7:5 Reserved R/W 000 4 Channel Enable R/W 1 3:1 Reserved R/W 000 0 Boost[8] R/W 0 See Table 5 7:0 Boost[7:0] R/W 00000000 See Table 5 0 = Disabled 1 = Enabled Table 5. Boost / EQ SMBus Register: 16 levels - recommended settings Boost Register Bits Result bit[8] bit[7] bit[6] bit[5] bit[4] bit[3] bit[2] bit[1] bit[0] @ 5.5 GHz 0 0 0 0 0 0 0 0 0 000'h - 2.7 dB (BST_[2:0]=000) 0 0 0 0 0 0 0 0 1 001'h - 7.3 dB (BST_[2:0]=001) 0 0 0 0 0 0 0 1 0 002'h - 10.3 dB 0 0 0 0 0 0 0 1 1 003'h - 12.2 dB (BST_[2:0]=010) 0 0 0 0 0 0 1 1 1 007'h - 16.6 dB (BST_[2:0]=011) 0 0 0 0 1 0 1 0 1 015'h - 17 dB 0 0 0 0 0 1 0 1 1 00B'h - 19.2 dB 0 0 0 0 0 1 1 1 1 00F'h - 20.6 dB (BST_[2:0]=100) 0 0 1 0 1 0 1 0 1 055'h - 21.9 dB 0 0 0 0 1 1 1 1 1 01F'h - 24.8 dB (BST_[2:0]=101) 0 0 0 1 0 1 1 1 1 02F'h - 27.6 dB (BST_[2:0]=110) 0 0 0 1 1 1 1 1 1 03F'h - 28.9 dB (BST_[2:0]=111) 0 1 0 1 0 1 0 1 0 0AA'h - 31.3 dB 0 0 1 1 1 1 1 1 1 07F'h - 33.3 dB 0 1 0 1 1 1 1 1 1 0BF'h - 35.7 dB 0 1 1 1 1 1 1 1 1 0FF'h - 37 dB Applications Information GENERAL RECOMMENDATIONS The DS100BR410 is a high performance circuit capable of delivering excellent performance up to 10.3125 Gbps. Careful attention must be paid to the details associated with high-speed design as well as providing a clean power supply. Refer to the LVDS Owner's Manual for more detailed information on high speed design tips to address signal integrity design issues. UNUSED CHANNEL It is recommended to disable the unused channel (EN[3:0] = LOW). The power consumption of the device is reduced when the channel is disabled. PCB LAYOUT CONSIDERATIONS FOR DIFFERENTIAL PAIRS The high speed CML inputs and outputs must have a controlled differential impedance of 100Ω. It is preferable to route differential lines exclusively on one layer of the board, particularly for the input traces. The use of vias should be avoided if possible. If vias must be used, they should be used sparingly and must be placed symmetrically for each side of a given differential pair. Route the differential signals away from other signals and noise sources on the printed circuit board. See AN-1187 (SNOA401) for additional information on WQFN packages. 14 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 Impedance discontinuities at the differential via can be minimized or eliminated by increasing the swell around each via hole. To further improve the signal quality, a ground via placed close to the signal via for a low inductance return current path is recommended. When the via structure is associated with stripline trace and a thick board, further optimization such as back drilling is often used to reduce the high frequency effects of via stubs on the signal path. To minimize cross-talk coupling, it is recommended to have >3X gap spacing between the differential pairs. For example, if the trace width is 5 mils with 5 mils spacing – 100Ω differential impedance (closely coupled). The gap spacing between the differential pairs should be >15 mils. POWER SUPPLY BYPASSING Two approaches are recommended to ensure that the DS100BR410 is provided with an adequate power supply. First, the supply (VDD) and ground (GND) pins should be connected to power planes routed on adjacent layers of the printed circuit board. The layer thickness of the dielectric should be minimized so that the VDD and GND planes create a low inductance supply with distributed capacitance. Second, careful attention to supply bypassing through the proper use of bypass capacitors is required. A 0.1uF or 0.01 μF bypass capacitor should be connected to each VDD pin such that the capacitor is placed as close as possible to the DS100BR410. Smaller body size capacitors can help facilitate proper component placement. Additionally, three capacitors with capacitance in the range of 2.2 μF to 10 μF should be incorporated in the power supply bypassing design as well. These capacitors can be either tantalum or an ultra-low ESR ceramic. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 15 DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com Typical Performance Curves Characteristics 270 VDD = 2.625V 250 VDD = 2.5V PD (mW) 230 VDD = 2.375V 210 190 170 T = 25°C 150 0.6 0.8 1.0 1.2 VOD (Vp -p) Figure 8. Power Dissipation (PD) vs. Output Differential Voltage (VOD) 990 T = 25°C VOD (mVp-p) 980 970 960 950 940 2.375 2.5 2.625 VDD (V) Figure 9. Output Differential Voltage (VOD = 1.0 Vp-p) vs. Supply Voltage (VDD) 1000 VDD = 2.5 V 980 960 940 920 - 40 -15 10 35 60 85 TEMPERATURE (°C) Figure 10. Output Differential Voltage (VOD = 1.0 Vp-p) vs. Temperature 16 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 DS100BR410 www.ti.com SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 Typical Performance Eye Diagrams Characteristics Pattern Generator VTX = 1.0 Vp-p, PRBS7 Lossy Channel (Cable/Trace) IN DS100BR410 OUT Scope BW = 70 GHz Figure 11. Test Setup Connections Diagram Figure 12. 12 meters, 30–AWG Cable at 10.3125 Gbps, BST[2:0] = 111, DE_SEL = 0 dB Figure 13. 40 inches, 6–mil FR4 Trace at 10.3125 Gbps, BST[2:0] = 101, DE_SEL = 0 dB Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 17 DS100BR410 SNLS326B – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com REVISION HISTORY Changes from Revision A (April 2013) to Revision B • 18 Page Changed layout of National Data Sheet to TI format .......................................................................................................... 17 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: DS100BR410 PACKAGE OPTION ADDENDUM www.ti.com 12-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) DS100BR410SQ/NOPB ACTIVE WQFN RHS 48 1000 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 100BR410 DS100BR410SQE/NOPB ACTIVE WQFN RHS 48 250 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 100BR410 DS100BR410SQX/NOPB ACTIVE WQFN RHS 48 2500 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 100BR410 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. 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Addendum-Page 1 Samples PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing DS100BR410SQ/NOPB WQFN RHS 48 DS100BR410SQE/NOPB WQFN RHS DS100BR410SQX/NOPB WQFN RHS SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1000 330.0 16.4 7.3 7.3 1.3 12.0 16.0 Q1 48 250 178.0 16.4 7.3 7.3 1.3 12.0 16.0 Q1 48 2500 330.0 16.4 7.3 7.3 1.3 12.0 16.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS100BR410SQ/NOPB WQFN RHS 48 1000 367.0 367.0 38.0 DS100BR410SQE/NOPB WQFN RHS 48 250 213.0 191.0 55.0 DS100BR410SQX/NOPB WQFN RHS 48 2500 367.0 367.0 38.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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