TI1 DS100BR410 Low power quad channel repeater with 10.3125 gbps equalizer and de-emphasis driver Datasheet

DS100BR410
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SNLS326B – OCTOBER 2010 – REVISED APRIL 2013
DS100BR410 Low Power Quad Channel Repeater with 10.3125 Gbps Equalizer and DeEmphasis Driver
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FEATURES
APPLICATIONS
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Quad channel repeater for up to 10.3125 Gbps
Low power consumption, with option to power
down unused channels
Adjustable receive equalization
Adjustable transmit de-emphasis
Adjustable transmit VOD (up to 1200 mVp-p)
IDLE detection — squelch function auto mutes
the output for SATA/SAS OOB signal
<0.22 UI of residual DJ at 10.3125 Gbps with 12
meters cable
Programmable via pin selection or SMBus
interface
Single supply operation at 2.5 V ±5%
-40°C to +85°C Operation
≥7 kV HBM ESD Rating
High speed signal flow–thru pinout package:
48-pin WQFN (7 mm x 7 mm, 0.5 mm pitch)
High-speed active copper cable modules
FR-4 Backplanes
10GE, 8GFC, 10GFC, 10G SONET, SAS, SATA,
and InfiniBand
DESCRIPTION
The DS100BR410 is an extremely low power, high
performance quad-channel repeater for high-speed
serial links with data rates up to 10.3125 Gbps. The
device performs both receive equalization and
transmit de-emphasis on each of its 4 channels to
compensate for channel loss, allowing maximum
flexibility of physical placement within a system.
The receiver's continuous time linear equalizer
(CTLE) is capable of opening an input eye that is
completely closed due to inter-symbol interference
(ISI) induced by the interconnect medium such as
backplane trace or cable. The transmitter features
adjustable VOD (output amplitude voltage level) and
de-emphasis driver to compensate for PCB trace lost.
With a low power consumption and control to turn-off
unused channels, the DS100BR410 is part of TI's
PowerWise family of energy efficient devices.
The programmable settings can be applied via pin
mode or SMBus mode interface.
Typical Application Diagram
Interconnect Cable
ASIC/
FPGA
DS100BR410
Slice 1 of 4
DS100BR410
Slice 1 of 4
ASIC/
FPGA
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2013, Texas Instruments Incorporated
DS100BR410
SNLS326B – OCTOBER 2010 – REVISED APRIL 2013
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VDD
SD0
EN0
SD1
EN1
SD2
EN2
SD3
EN3
BST_2
45
44
43
42
41
40
39
38
37
OOB_DIS
47
46
RES
48
Connection Diagram
IN_0+
1
36
OUT_0+
IN_0-
2
35
OUT_0-
VDD
3
34
GND
IN_1+
4
33
OUT_1+
IN_1-
5
32
OUT_1-
VDD
6
31
GND
VDD
7
30
GND
DS100BR410
IN_2+
8
29
OUT_2+
IN_2-
9
28
OUT_2-
VDD
10
27
GND
IN_3+
11
26
OUT_3+
IN_3-
12
25
OUT_3-
23
24
GND
22
19
VOD_SEL
GND
18
BST_0
17
SDC
SDA
21
16
CS
20
15
VDD
DE_SEL
14
BST_1
PIN_MODE
13
VDD
TOP VIEW
DAP = GND
Pin Descriptions
Pin Name
Pin #
I/O, Type (1)
Description
HIGH SPEED DIFFERENTIAL I/O
IN_0+
IN_0–
1
2
I, CML
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω
terminating resistor connects IN_0+ to IN_0-.
IN_1+
IN_1–
4
5
I, CML
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω
terminating resistor connects IN_1+ to IN_1-.
IN_2+
IN_2–
8
9
I, CML
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω
terminating resistor connects IN_2+ to IN_2-.
IN_3+
IN_3–
11
12
I, CML
Inverting and non-inverting CML differential inputs to the equalizer. An on-chip 100Ω
terminating resistor connects IN_3+ to IN_3-.
OUT_0+
OUT_0–
36
35
O, CML
Inverting and non-inverting CML differential outputs from the driver. An on-chip 100Ω
terminating resistor connects OUT_0+ to OUT_0-.
OUT_1+
OUT_1–
33
32
O, CML
Inverting and non-inverting CML differential outputs from the driver. An on-chip 100Ω
terminating resistor connects OUT_1+ to OUT_1-.
OUT_2+
OUT_2–
29
28
O, CML
Inverting and non-inverting CML differential outputs from the driver. An on-chip 100Ω
terminating resistor connects OUT_2+ to OUT_2-.
OUT_3+
OUT_3–
26
25
O, CML
Inverting and non-inverting CML differential outputs from the driver. An on-chip 100Ω
terminating resistor connects OUT_3+ to OUT_3-.
2.5V LVCMOS CONTROL PINS
BST_2
BST_1
BST_0
37
14
23
I, LVCMOS
BST_2, BST_1, and BST_0 select the equalizer boost level for all channels.
BST_2 and BST_1 are internally pulled high.
BST_0 is internally pulled low. See Table 1
EN0
EN1
EN2
EN3
44
42
40
38
I, LVCMOS
Enable channel n input.
When held High, normal operation is selected.
When held Low, standby mode is selected.
EN is internally pulled High.
(1)
2
Note: I = Input O = Output, LVCMOS pins are 2.5 V levels only, only SMBus pins SDA, SDC and CS are 3.3V tolerant.
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Pin Descriptions (continued)
Pin Name
Pin #
I/O, Type
(1)
Description
PIN_MODE
21
I, LVCMOS
Pin mode control input.
When held High, device is in Pin control mode.
When held Low, device is in SMBus Control Mode
PIN_MODE is internally pulled High.
SD0
SD1
SD2
SD3
45
43
41
39
O, LVCMOS
Signal detect n output.
Output is High when signal is detected.
Output is Low when signal is NOT detected.
OOB_DIS
47
I, LVCMOS
OOB disable control input.
When held High, OOB is disabled.
When held Low, OOB is enabled.
Out Of Band (OOB) for SATA/SAS applications is active.
OOB_DIS is internally pulled Low.
Analog Input Pins (4–level Inputs)
VOD_SEL
19
I, analog
Differential Output Voltage Select Input
Tie to VDD, VOD = 1.2 Vp-p
Leave Open, VOD = 1.0 Vp-p
Resistor (20 kΩ) to GND, VOD = 800 mVp-p
Tie to GND, VOD = 600 mVp-p
DE_SEL
20
I, analog
De-Emphasis Select Input
Tie to VDD = -9 dB
Leave Open = -6 dB
Resistor (20 kΩ) to GND = -3 dB
Tie to GND = 0 dB
SERIAL MANAGEMENT BUS (SMBus) INTERFACE
SDA
18
I/O, LVCMOS
Data Input / Open Drain Output
External pull-up resistor is required.
Pin is 3.3 V LVCMOS tolerant.
SDC
17
I, LVCMOS
Clock Input
Pin is 3.3 V LVCMOS tolerant.
CS
16
I, LVCMOS
Chip Select
When high, access to the SMBus registers are enabled. When low, access to the SMBus
registers are disabled. Please refer to “SMBus configuration Registers” section for detail
information.
Pin is 3.3 V LVCMOS tolerant.
VDD
3, 6, 7,
10, 13,
15, 46
Power
VDD = 2.5 V ± 5%
GND
22, 24,
27, 30,
31, 34
Power
Ground reference.
DAP
PAD
Power
Ground reference. The exposed pad at the center of the package must be connected to ground
plane of the board with at least 4 via to lower the ground impedance and improve the thermal
performance of the package.
RES
48
NC
POWER
Reserved – Do not connect
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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DS100BR410
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Absolute Maximum Ratings
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(1)
Supply Voltage (VDD)
-0.5V to +2.75V
2.5 I/O Voltage
(LVCMOS and Analog Input)
-0.5V to +2.75V
3.3 LVCMOS I/O Voltage
(SDA, SDC, CS)
-0.5V to +4.0V
CML Input Voltage (IN_n+/-)
-0.5V to +2.75V
CML Output Voltage (OUT_n+/-)
-0.5V to +2.75V
Junction Temperature
+150°C
Storage Temperature
-65°C to +150°C
ESD Rating
HBM, STD - JESD22-A114F
≥7 kV
MM, STD - JESD22-A115-A
≥200 V
≥1250 V
CDM, STD - JESD22-C101-D
Thermal Resistance
θJA, No Airflow,
4 layer JEDEC, 9 thermal vias
27.6 °C/W
For soldering specifications: see product folder at www.ti.com
http://www.ti.com/lit/SNOA549
(1)
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied.
Recommended Operating Conditions (1)
Min
Typ
Max
Units
2.375
2.5
2.625
V
-40
25
+85
°C
Supply Voltage
VDD to GND
Ambient Temperature
(1)
The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated
beyond such conditions.
Electrical Characteristics
Over recommended operating supply and temperature ranges with default register settings unless other specified.
Parameter
Test Conditions
Min
(1)
Typ
Max
Units
Device Output Enabled
(EN[3:0] = High),
VOD_SEL = open (1.0 Vp-p)
220
275
mW
Device Output Disable
(EN[3:0] = Low)
25
40
mW
50 Hz to 100 Hz
100
mVP-P
100 Hz to 10 MHz
40
mVP-P
10 MHz to 5.0 GHz
10
mVP-P
POWER
PD
Power Supply Consumption
PSNT
Supply Noise Tolerance (2)
2.5 LVCMOS DC Specifications
VIH
High Level Input Voltage
1.75
VDD
V
VIL
Low Level Input Voltage
-0.3
0.7
V
VOH
High Level Output Voltage
IOH = -3mA
VOL
Low Level Output Voltage
IOL = 3mA
0.4
V
IIN
Input Leakage Current
VIN = VDD
+10
μA
VIN = GND
(1)
(2)
4
2.0
-10
V
μA
Typical values represent most likely parametric norms at VDD = 2.5V, TA = 25°C., and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
Specification is ensured by characterization at optimal boost setting and is not tested in production.
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Electrical Characteristics (continued)
Over recommended operating supply and temperature ranges with default register settings unless other specified. (1)
Parameter
IIN-P
Test Conditions
Min
Typ
Input Leakage Current with Internal VIN = VDD, with internal pull-down
Pull-Down/Up Resistors
resistors
VIN = GND, with internal pull-up
resistors
Max
Units
+65
μA
μA
-50
Signal Detect
SDH
Signal Detect ON Threshold Level
Default input signal level to assert
SD pin, 10.3125 Gbps
SDL
Signal Detect OFF Threshold Level Default input signal level to deassert SD, 10.3125 Gbps
130
mVp-p
60
mVp-p
CML Receiver Inputs (IN_n+, IN_n-)
VTX
RLI
Source Transmit Launch Signal
Level (IN diff)
AC-Coupled Requirement,
Differential measurement at point
A. Figure 1
Differential Input Return Loss SDD11
100 MHz – 6 GHz, with fixture’s
effect de-embedded
600
1600
mVP-P
-15
dB
CML Driver Outputs (OUT_n+, OUT_n-)
Output Differential Voltage Level (3), Differential measurement with
Figure 2
OUT+ and OUT- terminated by
50Ω to GND, AC-Coupled,
VOD_SEL = open (1.0 Vp-p),
DE_SEL = GND
VOD
750
Differential measurement with
OUT+ and OUT- terminated by
50Ω to GND, AC-Coupled,
VOD_SEL = VDD (1.2 Vp-p),
DE_SEL = GND
VOD_DE
tR, tF
RLO
De-Emphasis Levels (4)
(5)
Transition Time
1150
mVP-P
1140
mVP-P
DE_SEL = 20kΩ to GND,
VOD_SEL = VDD (1.2 Vp-p)
-3
dB
DE_SEL = open,
VOD_SEL = VDD (1.2 Vp-p)
-6
dB
DE_SEL = VDD,
VOD_SEL = VDD (1.2 Vp-p)
-9
dB
20% to 80% of differential output
voltage, measured within 1” from
output pins. Figure 2
Differential Output Return Loss SDD22
100 MHz – 6 GHz, with fixture’s
effect de-embedded. IN+ = static
high.
tPLHD
Differential Low to High
Propagation Delay
tPHLD
Differential High to Low
Propagation Delay
Propagation delay measurement at
50% crossing between input to
output, 100 Mbps. Figure 3
tCCSK
Inter Pair Channel to Channel
Skew
tPPSK
RJ
(3)
(4)
(5)
(6)
970
30
38
45
ps
-15
dB
240
ps
240
ps
Difference in 50% crossing
between channels
7
ps
Part to Part Output Skew
Difference in 50% crossing
between outputs
20
ps
Random Jitter
VTX = 1.0 Vp-p, BST_[2:0] = 000,
0.3
psrms
(4) (6)
Measured with clock-like {11111 00000} pattern.
Measured with clock-like {11111 00000} pattern.
The de-emphasis level of −3 dB, −6 dB, −9 dB are for VOD = 1.2 Vp-p. At lower VOD level, the de-emphasis levels are reduced.
Random jitter contributed by the equalizer is defined as sqrt (JOUT2 – JIN2). JOUT is the random jitter at equalizer outputs in ps-rms, see
point C of Figure 1; JIN is the random jitter at the input of the equalizer in ps-rms, see point B of Figure 1.
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Electrical Characteristics (continued)
Over recommended operating supply and temperature ranges with default register settings unless other specified. (1)
Parameter
Test Conditions
Min
Typ
Max
Units
0.10
0.22
UIP-P
0.07
0.12
UIP-P
Equalization
DJ1
DJ2
Residual Deterministic Jitter
at 10.3125 Gbps
VTX = 1.0 VP-P,
12 meter 30 AWG cable,
EQ = 03F'h (BST[2:0] = 111),
PRBS-7 (27-1) pattern. (7)
Residual Deterministic Jitter
at 6.0 Gbps
VTX = 1.0 VP-P,
12 meter 30 AWG cable,
EQ = 07F'h, PRBS-7 (27-1) pattern.
(7)
Signal DETECT and ENABLE Timing
tZISD
Input OFF to ON detect — SD
Output High Response Time
tIZSD
Input ON to OFF detect — SD
Output Low Response Time
tOZOED
EN High to Output ON Response
Time
tZOED
EN Low to Output OFF Response
Time
(7)
Response time measurement at
VIN to SD output, VIN = 800 mVP-P,
100 Mbps, 40” of 6 mil microstrip
FR4. Figure 4
Response time measurement at
EN input to VO, VIN = 800 mVP-P,
100 Mbps, 40” of 6 mil microstrip
FR4. Figure 5
35
ns
400
ns
150
ns
5
ns
Deterministic jitter is measured at the differential outputs (point C of Figure 1), minus the deterministic jitter before the test channel (point
A of Figure 1). Random jitter is removed through the use of averaging or similar means.
Electrical Characteristics — Serial Management Bus Interface
Over recommended operating supply and temperature ranges unless other specified.
Parameter
Test Conditions
(1)
Min
Typ
Max
Units
0.8
V
VDD
V
Serial Bus Interface DC Specifications
VIL
Data, Clock Input Low Voltage
VIH
Data, Clock Input High Voltage
IPULLUP
Current Through Pull-Up Resistor
or Current Source
VDD
Nominal Bus Voltage
ILEAK-Bus
Input Leakage Per Bus Segment
ILEAK-Pin
Input Leakage Per Device Pin
CI
Capacitance for SDA and SDC
See (2)
RTERM
External Termination Resistance
pull to VDD = 2.5V ± 5% OR 3.3V ±
10%
VDD3.3, (2)
(3)
VDD2.5, (2)
(3)
2.1
High Power Specification
See
(2)
4
mA
2.375
3.6
V
-200
+200
µA
-15
(3)
Serial Bus Interface Timing Specifications – (See Figure 6)
µA
10
pF
2000
Ω
1000
Ω
(4) (5)
FSMB
Bus Operating Frequency
10
100
kHz
TBUF
Bus Free Time Between Stop and
Start Condition
4.7
µs
THD:STA
Hold time after (Repeated) Start
Condition. After this period, the first
clock is generated.
4.0
µs
At IPULLUP, Max
TSU:STA
Repeated Start Condition Setup
Time
4.7
µs
TSU:STO
Stop Condition Setup Time
4.0
µs
THD:DAT
Data Hold Time
300
ns
(1)
(2)
(3)
(4)
(5)
6
Typical values represent most likely parametric norms at VDD = 2.5V, TA = 25°C., and at the Recommended Operation Conditions at the
time of product characterization and are not ensured.
Maximum termination voltage should be identical to the device supply voltage.
Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1
SMBus common AC specifications for details.
Recommended value. Parameter not tested in production.
Recommended maximum capacitance load per bus segment is 400pF.
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Electrical Characteristics — Serial Management Bus Interface (continued)
Over recommended operating supply and temperature ranges unless other specified. (1)
Parameter
Test Conditions
Min
Typ
Max
Units
TSU:DAT
Data Setup Time
250
ns
TLOW
Clock Low Period
4.7
µs
THIGH
Clock High Period
4.0
50
µs
tF
Clock/Data Fall Time
300
ns
tR
Clock/Data Rise Time
1000
ns
tPOR
Time in which a device must be
operational after power-on reset
500
ms
AC WAVEFORMS AND TEST CIRCUITS
1/4 DS100BR410
Signal
Source
Media A
Media B
TPA
TPB
Scope
TPC
TPD
Figure 1. Test Setup Diagram
80%
80%
0V
OUT diff = (OUT+) ± (OUT-)
20%
20%
tR
tF
Figure 2. Output Transition Times
IN diff
0V
tPLHD
OUT diff
tPHLD
0V
Figure 3. Propagation Delay Timing Diagram
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IN diff
0V
tIZSD
tZISD
VDD
SD
50%
50%
0V
Figure 4. Signal Detect (SD) Delay Timing Diagram
VDD
EN
50%
50%
0V
tOZED
tZOED
0V
OUT diff
Figure 5. Enable (EN) Delay Timing Diagram
CS
tSU;CS
SDA
tLOW
tf
tHD;STA
tr
tf
tr
tBUF
tSP
SDC
tSU;STA
tHD;STA
tHD;DAT
START
tHIGH
tSU;STO
tSU;DAT
STOP
REPEATED
START
START
Figure 6. SMBus Timing Parameters
8
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FUNCTIONAL DESCRIPTION
DS100BR410 Functional Descriptions
The DS100BR410 is a Low Power Quad Channel Repeater with Equalizer and De-Emphasis Driver optimized for
operation up to 10.3125 Gbps for backplane and cable applications.
DATA CHANNELS
The DS100BR410 provides four data channels. Each data channel consists of an equalizer stage, a limiting
amplifier, a DC offset correction block, and a CML driver as shown in Figure 7.
1 of 4 Channels - DS100BR410
EQ
OUTBUF
LIMITER
IN_n+
OUT_n+
IN_n-
OUT_n-
BST[2]
BST[1]
BST[0]
SMBus
SMBus
IDLE
DET
SMBus
OOB_DIS
VOD_SEL
DE_SEL
ENn
SDn
PIN_Mode
SMBus
CS
SDC
SDA
Figure 7. Simplified Block Diagram
EQUALIZER BOOST CONTROL
Each data channel support eight programmable levels of equalization boost. The state of the PIN_MODE control
input determines how the boost settings are controlled. If PIN_MODE is held High, then the equalizer boost
setting is controlled by the Boost Set pins (BST_[2:0]) in accordance with Table 1. If this programming method is
chosen, then the boost setting selected on the Boost Set pins is applied to all channels. When PIN_MODE is
held Low, the equalizer boost level is controlled through the SMBus. This programming method is accessed via
the appropriate SMBus registers (see Table 4). Using this approach, equalizer boost settings can be
programmed for each channel individually. PIN_MODE is internally pulled High, therefore if left open, the boost
settings are controlled by the Boost Set pins (BST_[2:0]). The eight levels of boost settings enables the
DS100BR410 to address a wide range of media loss and data rates.
Table 1. Boost / EQ Pin Mode Configuration
SMBus
Register Bits
Inputs
Result @ 5 GHz
BST_2
BST_1
BST_0
[8:0]
0
0
0
000000000
2.7 dB
0
0
1
000000001
7.3 dB
0
1
0
000000011
12.2 dB
0
1
1
000000111
16.6 dB
1
0
0
000001111
20.6 dB
1
0
1
000011111
24.8 dB
1
1
0
000101111
27.6 dB (default)
1
1
1
000111111
28.9 dB
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SIGNAL DETECT
The DS100BR410 features a signal detect circuit on each data channel. The status of the signal of each channel
can be determined by either reading the Signal Detect bit (SDn) in the SMBus registers (see Table 4) or by the
state of each SDn pin. An output logic high indicates the presence of a signal that has exceeded the ON
threshold value (called SDH). An output logic Low means that the input signal has fallen below the OFF
threshold value (called SDL). These values are programmed via the SMBus. If not programmed via the SMBus,
the thresholds take on the default values. The Signal Detect threshold values can be changed through the
SMBus. All threshold values specified are DC peak-to-peak differential signals (positive signal minus negative
signal) at the input of the device.
OUTPUT LEVEL CONTROL
The output amplitude of the CML drivers can be controlled via the 4–level analog input VOD_SEL pin or via
SMBus (see Table 4). The default VOD level is 1.0 Vp-p.
Table 2. VOD_SEL Pin Configuration
VOD_SEL Pin
Result
Tie High - VDD
1.2 Vp-p
Open* (default)
1.0 Vp-p
20 kΩ resistor to GND
800 mVp-p
Tie to GND
600 mVp-p
OUTPUT DE-EMPHASIS CONTROL
The output De-Emphasis may be controled via the 4–level analog input DE_SEL pin or via SMBus (see Table 4).
Table 3. DE_SEL Pin Configuration
DE_SEL Pin
Result
Tie High - VDD
-9 dB
Open* (default)
-6 dB
20 kΩ resistor to GND
-3 dB
Tie to GND
0 dB
AUTOMATIC ENABLE FEATURE
It may be desirable to place unused channels in power-saving Standby mode. This can be accomplished by
connecting the Signal detect (SDn) pin to the Enable (ENn) pin for each channel (See Figure 7).
System Management Bus (SMBus) and Configuration Registers
The System Management Bus interface is compatible to SMBus 2.0 physical layer specification. The use of the
Chip Select signal is required. Holding the CS pin High enables the SMBus port allowing access to the
configuration registers. Holding the CS pin Low disables the device's SMBus allowing communication from the
host to other slave devices on the bus. In the STANDBY state, the System Management Bus remains active.
When communication to other devices on the SMBus is active, the CS signal for the DS100BR410s must be
driven Low.
The address byte for all DS100BR410s is AC'h. Based on the SMBus 2.0 specification, the DS100BR410 has a
7-bit slave address of 1010110'b. The LSB is set to 0'b (for a WRITE), thus the 8-bit value is 1010 1100'b or
AC'h.
The SDA, SDC and CS pins are 3.3V tolerant, but are not 5V tolerant. External pull-up resistor is required on the
SDA. The resistor value can be from 1 kΩ to 5 kΩ depending on the voltage, loading and speed. The SDC and
CS may also require an external pull-up resistor and it depends on the Host that drives the bus.
Transfer of Data via the SMBus
During normal operation the data on SDA must be stable during the time when SDC is High.
10
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There are three unique states for the SMBus:
START: A High-to-Low transition on SDA while SDC is High indicates a message START condition.
STOP: A Low-to-High transition on SDA while SDC is High indicates a message STOP condition.
IDLE: If SDC and SDA are both High for a time exceeding tBUF from the last detected STOP condition or if they
are High for a total exceeding the maximum specification for tHIGH then the bus will transfer to the IDLE state.
SMBus Transactions
The device supports WRITE, Burst WRITE, READ. and Burst READ transactions. See Table 4 for register
address, type (Read/Write, Read Only), default value and function information.
Writing a Register
To
1.
2.
3.
4.
5.
6.
7.
8.
9.
write a register, the following protocol is used (see SMBus 2.0 specification).
The Host (Master) selects the device by driving its SMBus Chip Select (CS) signal High.
The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
The Device (Slave) drives the ACK bit (“0”).
The Host drives the 8-bit Register Address.
The Device drives an ACK bit (“0”).
The Host drive the 8-bit data byte.
The Device drives an ACK bit (“0”).
The Host drives a STOP condition.
The Host de-selects the device by driving its SMBus CS signal Low.
The WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices may
now occur.
Reading a Register
To read a register, the following protocol is used (see SMBus 2.0 specification).
1. The Host (Master) selects the device by driving its SMBus Chip Select (CS) signal High.
2. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
3. The Device (Slave) drives the ACK bit (“0”).
4. The Host drives the 8-bit Register Address.
5. The Device drives an ACK bit (“0”).
6. The Host drives a START condition.
7. The Host drives the 7-bit SMBus Address, and a “1” indicating a READ.
8. The Device drives an ACK bit “0”.
9. The Device drives the 8-bit data value (register contents).
10. The Host drives a NACK bit “1”indicating end of the READ transfer.
11. The Host drives a STOP condition.
12. The Host de-selects the device by driving its SMBus CS signal Low.
The READ transaction is completed, the bus goes IDLE and communication with other SMBus devices may now
occur.
Information on the Registers
The status registers 01'h to 03'h provide information of the channel that is selected. The information provided are
the OOB_DIS, EN, EQ Boost, VOD and DEM bits of the selected channel. By default, channel 0 is selected. In
order to change the selected channel, write to reg_07 bit[5:4]. Write a 1 to reg_07 bit[0] is also needed to allow
the registers 13'h to 1A'h to control the channel EN and EQ boost bits of each of the channels. Each channel can
be individually enabled (EN) and set to a desired boost level with these registers. Please refer to Table 4 for
additional information.
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Table 4. DS100BR410 Register Map
ADD
(hex)
00
01
REG Name
Device ID
Bit(s)
Field
Type
Default
(binary)
7:4
Device ID
R
3
SD_CH3
R
1: Signal detected on CH3
0: No signal
2
SD_CH2
R
1: Signal detected on CH2
0: No signal
1
SD_CH1
R
1: Signal detected on CH1
0: No signal
0
SD_CH0
R
1: Signal detected on CH0
0: No signal
Status Register
7
for OOB_DIS, EN
6
and Boost_bit[8]
Reserved
R
OOB_DIS
R
5
Reserved
R
4
EN
R
3:1
Reserved
R
0
Boost_bit[8]
R
Boost_bit[8]
Boost_bit[7:0]
02
Status Register
for Boost_bit[7:0]
7:0
Boost_bit[7:0]
R
03
Status Register
for VOD[5:4] and
DEM[1:0]
7:6
Reserved
R
5:4
VOD[5:4]
R
3:2
Reserved
R
1:0
DEM[1:0]
R
0010
EN
1: Channel Enabled
0: Channel Disabled
VOD[5:4]
00 = 0.6 Vp-p
01 = 0.8 Vp-p
10 = 1.0 Vp-p
11 = 1.2 Vp-p
DEM[1:0]
00 = 0 dB
01 = -3 dB
10 = -6 dB
11 = -9 dB
Reserved
7:0
Reserved
R
00
05
Signal Detect
Assert Threshold
7:6
SD_ON_CH3
R/W
00
5:4
SD_ON_CH2
R/W
00
3:2
SD_ON_CH1
R/W
00
1:0
12
Device ID Value
OOB_DIS
1: OOB Disabled
0: OOB Enabled
04
06
Description
SD_ON_CH0
R/W
00
Signal Detect De- 7:6
assert Threshold
5:4
SD_OFF_CH3
R/W
00
SD_OFF_CH2
R/W
00
3:2
SD_OFF_CH1
R/W
00
1:0
SD_FF_CH0
R/W
00
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Signal Detect ON Threshold
00 = 130 mV
01 = 125 mV
10 = 150 mV
11 = 140 mV
Signal Detect OFF Threshold
00 = 60 mV
01 = 40 mV
10 = 105 mV
11 = 90 mV
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Table 4. DS100BR410 Register Map (continued)
ADD
(hex)
07
08
REG Name
Port/Channel
Select and
Enable SMBus
Registers
Driver VOD
Control
Bit(s)
Field
Default
(binary)
Type
7:6
Reserved
R/W
00
5:4
Port/Channel Select for
Status
R/W
00
3:1
Reserved
R/W
000
0
SMBUS Channel EN and EQ R/W
boost
0
7
Reserved
R/W
0
6:4
Reserved
R/W
111
3:2
VOD Control
R/W
10
1:0
Reserved
R/W
00
Description
Select port/channel [1:0] to report status in
REG_01 to REG_03
00 = port0 (CH0)
01 = port1 (CH1)
10 = port2 (CH2)
11 = port3 (CH3)
Channel EN and EQ Boost through pins or
smbus REG_13 to REG_1A
0 = Channel EN[3:0] and EQ BST[2:0] boost
set by external pins
1 = Allow channel EN and EQ boost to be
set by SMBus Register bits: REG_13 to
REG_1A
00
01
10
11
= 0.6
= 0.8
= 1.0
= 1.2
Vp-p
Vp-p
Vp-p
Vp-p
00
01
10
11
= 0 dB
= -3 dB
= -6 dB
= -9 dB
09 – 10
Reserved
7:0
Reserved
R/W
00000000
11
De-Emphasis
Control
7:6
DEM_CH3
R/W
00
5:4
DEM_CH2
R/W
00
3:2
DEM_CH1
R/W
00
1:0
DEM_CH0
R/W
00
7:3
Reserved
R/W
00000
2:1
Reserved
R/W
11
0
OOB Signal Detect Control
R/W
0
7:5
Reserved
R/W
000
4
Channel Enable
R/W
1
3:1
Reserved
R/W
000
0
Boost[8]
R/W
0
See Table 5
See Table 5
12
13
OOB Signal
Detect Control
Channel 3
EN and EQ
Control
0 = OOB signal detect enabled
1 = OOB signal detect disabled
0 = Disabled
1 = Enabled
14
EQ Control
Channel 3
7:0
Boost[7:0]
R/W
00000000
15
Channel 2
EN and EQ
Control
7:5
Reserved
R/W
000
4
Channel Enable
R/W
1
3:1
Reserved
R/W
000
0
Boost[8]
R/W
0
See Table 5
See Table 5
0 = Disabled
1 = Enabled
16
EQ Control
Channel 2
7:0
Boost[7:0]
R/W
00000000
17
Channel 1
EN and EQ
Control
7:5
Reserved
R/W
000
4
Channel Enable
R/W
1
3:1
Reserved
R/W
000
0
Boost[8]
R/W
0
See Table 5
7:0
Boost[7:0]
R/W
00000000
See Table 5
18
EQ Control
Channel 1
0 = Disabled
1 = Enabled
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Table 4. DS100BR410 Register Map (continued)
ADD
(hex)
19
REG Name
Channel 0
EN and EQ
Control
1A
EQ Control
Channel 0
Bit(s)
Field
Default
(binary)
Type
Description
7:5
Reserved
R/W
000
4
Channel Enable
R/W
1
3:1
Reserved
R/W
000
0
Boost[8]
R/W
0
See Table 5
7:0
Boost[7:0]
R/W
00000000
See Table 5
0 = Disabled
1 = Enabled
Table 5. Boost / EQ SMBus Register: 16 levels - recommended settings
Boost Register Bits
Result
bit[8]
bit[7]
bit[6]
bit[5]
bit[4]
bit[3]
bit[2]
bit[1]
bit[0]
@ 5.5 GHz
0
0
0
0
0
0
0
0
0
000'h - 2.7 dB (BST_[2:0]=000)
0
0
0
0
0
0
0
0
1
001'h - 7.3 dB (BST_[2:0]=001)
0
0
0
0
0
0
0
1
0
002'h - 10.3 dB
0
0
0
0
0
0
0
1
1
003'h - 12.2 dB (BST_[2:0]=010)
0
0
0
0
0
0
1
1
1
007'h - 16.6 dB (BST_[2:0]=011)
0
0
0
0
1
0
1
0
1
015'h - 17 dB
0
0
0
0
0
1
0
1
1
00B'h - 19.2 dB
0
0
0
0
0
1
1
1
1
00F'h - 20.6 dB (BST_[2:0]=100)
0
0
1
0
1
0
1
0
1
055'h - 21.9 dB
0
0
0
0
1
1
1
1
1
01F'h - 24.8 dB (BST_[2:0]=101)
0
0
0
1
0
1
1
1
1
02F'h - 27.6 dB (BST_[2:0]=110)
0
0
0
1
1
1
1
1
1
03F'h - 28.9 dB (BST_[2:0]=111)
0
1
0
1
0
1
0
1
0
0AA'h - 31.3 dB
0
0
1
1
1
1
1
1
1
07F'h - 33.3 dB
0
1
0
1
1
1
1
1
1
0BF'h - 35.7 dB
0
1
1
1
1
1
1
1
1
0FF'h - 37 dB
Applications Information
GENERAL RECOMMENDATIONS
The DS100BR410 is a high performance circuit capable of delivering excellent performance up to 10.3125 Gbps.
Careful attention must be paid to the details associated with high-speed design as well as providing a clean
power supply. Refer to the LVDS Owner's Manual for more detailed information on high speed design tips to
address signal integrity design issues.
UNUSED CHANNEL
It is recommended to disable the unused channel (EN[3:0] = LOW). The power consumption of the device is
reduced when the channel is disabled.
PCB LAYOUT CONSIDERATIONS FOR DIFFERENTIAL PAIRS
The high speed CML inputs and outputs must have a controlled differential impedance of 100Ω. It is preferable to
route differential lines exclusively on one layer of the board, particularly for the input traces. The use of vias
should be avoided if possible. If vias must be used, they should be used sparingly and must be placed
symmetrically for each side of a given differential pair. Route the differential signals away from other signals and
noise sources on the printed circuit board. See AN-1187 (SNOA401) for additional information on WQFN
packages.
14
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Impedance discontinuities at the differential via can be minimized or eliminated by increasing the swell around
each via hole. To further improve the signal quality, a ground via placed close to the signal via for a low
inductance return current path is recommended. When the via structure is associated with stripline trace and a
thick board, further optimization such as back drilling is often used to reduce the high frequency effects of via
stubs on the signal path. To minimize cross-talk coupling, it is recommended to have >3X gap spacing between
the differential pairs. For example, if the trace width is 5 mils with 5 mils spacing – 100Ω differential impedance
(closely coupled). The gap spacing between the differential pairs should be >15 mils.
POWER SUPPLY BYPASSING
Two approaches are recommended to ensure that the DS100BR410 is provided with an adequate power supply.
First, the supply (VDD) and ground (GND) pins should be connected to power planes routed on adjacent layers
of the printed circuit board. The layer thickness of the dielectric should be minimized so that the VDD and GND
planes create a low inductance supply with distributed capacitance. Second, careful attention to supply
bypassing through the proper use of bypass capacitors is required. A 0.1uF or 0.01 μF bypass capacitor should
be connected to each VDD pin such that the capacitor is placed as close as possible to the DS100BR410.
Smaller body size capacitors can help facilitate proper component placement. Additionally, three capacitors with
capacitance in the range of 2.2 μF to 10 μF should be incorporated in the power supply bypassing design as
well. These capacitors can be either tantalum or an ultra-low ESR ceramic.
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Typical Performance Curves Characteristics
270
VDD = 2.625V
250
VDD = 2.5V
PD (mW)
230
VDD = 2.375V
210
190
170
T = 25°C
150
0.6
0.8
1.0
1.2
VOD (Vp -p)
Figure 8. Power Dissipation (PD) vs. Output Differential Voltage (VOD)
990
T = 25°C
VOD (mVp-p)
980
970
960
950
940
2.375
2.5
2.625
VDD (V)
Figure 9. Output Differential Voltage (VOD = 1.0 Vp-p) vs. Supply Voltage (VDD)
1000
VDD = 2.5 V
980
960
940
920
- 40
-15
10
35
60
85
TEMPERATURE (°C)
Figure 10. Output Differential Voltage (VOD = 1.0 Vp-p) vs. Temperature
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Typical Performance Eye Diagrams Characteristics
Pattern
Generator
VTX = 1.0 Vp-p,
PRBS7
Lossy Channel
(Cable/Trace)
IN
DS100BR410
OUT
Scope
BW = 70 GHz
Figure 11. Test Setup Connections Diagram
Figure 12. 12 meters, 30–AWG Cable at 10.3125 Gbps,
BST[2:0] = 111, DE_SEL = 0 dB
Figure 13. 40 inches, 6–mil FR4 Trace at 10.3125 Gbps,
BST[2:0] = 101, DE_SEL = 0 dB
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REVISION HISTORY
Changes from Revision A (April 2013) to Revision B
•
18
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 17
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PACKAGE OPTION ADDENDUM
www.ti.com
12-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
DS100BR410SQ/NOPB
ACTIVE
WQFN
RHS
48
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 85
100BR410
DS100BR410SQE/NOPB
ACTIVE
WQFN
RHS
48
250
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 85
100BR410
DS100BR410SQX/NOPB
ACTIVE
WQFN
RHS
48
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 85
100BR410
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
DS100BR410SQ/NOPB
WQFN
RHS
48
DS100BR410SQE/NOPB
WQFN
RHS
DS100BR410SQX/NOPB
WQFN
RHS
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
1000
330.0
16.4
7.3
7.3
1.3
12.0
16.0
Q1
48
250
178.0
16.4
7.3
7.3
1.3
12.0
16.0
Q1
48
2500
330.0
16.4
7.3
7.3
1.3
12.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
DS100BR410SQ/NOPB
WQFN
RHS
48
1000
367.0
367.0
38.0
DS100BR410SQE/NOPB
WQFN
RHS
48
250
213.0
191.0
55.0
DS100BR410SQX/NOPB
WQFN
RHS
48
2500
367.0
367.0
38.0
Pack Materials-Page 2
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TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
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www.ti.com/omap
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www.ti.com/wirelessconnectivity
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