Cypress CY62157ELL-55BVXE 8-mbit (512 k x 16) static ram automatic power down when deselected Datasheet

CY62157E MoBL®
8-Mbit (512 K × 16) Static RAM
8-Mbit (512 K × 16) Static RAM
Features
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Place the device
into standby mode when deseleMoBL®cted (CE1 HIGH or CE2
LOW or both BHE and BLE are HIGH). The input or output pins
(I/O0 through I/O15) are placed in a high impedance state when:
■
Very high speed: 45 ns
❐ Industrial: –40 °C to +85 °C
❐ Automotive-E: –40 °C to +125 °C
■
Wide voltage range: 4.5 V–5.5 V
■
Ultra low standby power
❐ Typical standby current: 2 A
❐ Maximum standby current: 8 A (Industrial)
■
Ultra low active power
❐ Typical active current: 1.8 mA at f = 1 MHz
■
Ultra low standby power
■
Easy memory expansion with CE1, CE2 and OE features
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Available in Pb-free 44-pin TSOP II and 48-ball VFBGA
package
■
Deselected (CE1HIGH or CE2 LOW)
■
Outputs are disabled (OE HIGH)
■
Both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH)
■
Write operation is active (CE1 LOW, CE2 HIGH and WE LOW)
To write to the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0 through
A18). If Byte High Enable (BHE) is LOW, then data from I/O pins
(I/O8 through I/O15) is written into the location specified on the
address pins (A0 through A18).
To read from the device, take Chip Enable (CE1 LOW and CE2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appear
on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from
memory appears on I/O8 to I/O15. See Truth Table on page 12
for a complete description of read and write modes.
Functional Description
The CY62157E is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life (MoBL®) in portable
Logic Block Diagram
ROW DECODER
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
CE2
•
I/O8–I/O15
BHE
198 Champion Court
A17
A18
A15
A16
WE
A14
BHE
I/O0–I/O7
COLUMN DECODER
CE1
BLE
Cypress Semiconductor Corporation
Document #: 38-05695 Rev. *H
512K x 16
RAM Array
A11
A12
A13
Power Down
Circuit
SENSE AMPS
DATA IN DRIVERS
•
OE
BLE
San Jose, CA 95134-1709
CE2
CE1
•
408-943-2600
Revised May 30, 2011
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CY62157E MoBL®
Contents
Product Portfolio ..............................................................3
Pin Configuration .............................................................3
Maximum Ratings .............................................................4
Operating Range ...............................................................4
Electrical Characteristics .................................................4
Capacitance ......................................................................5
Thermal Resistance ..........................................................5
AC Test Loads and Waveforms .......................................5
Data Retention Characteristics .......................................6
Data Retention Waveform ................................................6
Switching Characteristics ................................................7
Switching Waveforms ......................................................8
Read Cycle No. 1 (Address Transition Controlled) .....8
Read Cycle No. 2 (OE Controlled) ..............................8
Write Cycle No. 1 (WE Controlled) ..............................9
Write Cycle No. 2 (CE1 or CE2 Controlled) ..............10
Document #: 38-05695 Rev. *H
Write Cycle No. 3 (WE Controlled, OE LOW) ............11
Write Cycle No. 4
(BHE/BLE Controlled, OE LOW) ......................................11
Truth Table ......................................................................12
Ordering Information ......................................................13
Ordering Code Definitions .........................................13
Package Diagrams ..........................................................14
Acronyms ........................................................................16
Document Conventions .................................................16
Units of Measure .......................................................16
Document History Page .................................................17
Sales, Solutions, and Legal Information ......................18
Worldwide Sales and Design Support .......................18
Products ....................................................................18
PSoC Solutions .........................................................18
Page 2 of 18
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CY62157E MoBL®
Product Portfolio
Power Dissipation
Product
Speed
(ns)
VCC Range (V)
Range
Operating ICC, (mA)
f = 1 MHz
Min
Typ[1]
Max
Standby, ISB2
(A)
f = fmax
Typ[1]
Max
Typ[1]
Max
Typ[1]
Max
CY62157ELL
Industrial
4.5
5.0
5.5
45
1.8
3
18
25
2
8
CY62157ELL
Automotive
4.5
5.0
5.5
55
1.8
4
18
35
2
30
Pin Configuration [2, 3]
48-ball VFBGA
44-pin TSOP II
Top View
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
A8
A9
A10
A11
A12
A13
Top View
4
3
1
2
BLE
OE
A0
I/O8
BHE
I/O9
5
6
A1
A2
CE2
A
A3
A4
CE1
I/O0
B
I/O10
A5
A6
I/O1
I/O2
C
VSS
I/O11
A17
A7
I/O3
Vcc
D
VCC
I/O12
NC
A16
I/O4
Vss
E
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O15
NC
A12
A13
WE
I/O7
G
A18
A8
A9
A10
A11
NC
H
Notes
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
2. NC pins are not connected on the die.
3. The 44-pin TSOP II package has only one chip enable (CE) pin.
Document #: 38-05695 Rev. *H
Page 3 of 18
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CY62157E MoBL®
DC Input Voltage[4, 5] ..................................... –0.5 V to 6.0 V
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................. –65 °C to + 150 °C
Ambient Temperature with
Power Applied ........................................ –55 °C to + 125 °C
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ........................................> 2001 V
(MIL-STD-883, Method 3015)
Latch up Current ....................................................> 200 mA
Operating Range
Supply Voltage to Ground
Potential .........................................................–0.5 V to 6.0 V
Device
Range
DC Voltage Applied to Outputs
in High Z State[4, 5] .........................................–0.5 V to 6.0 V
CY62157ELL
Industrial
Ambient
Temperature
VCC[6]
–40 °C to +85 °C 4.5 V to 5.5 V
Automotive –40 °C to +125 °C
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
45 ns (Industrial)
55 ns (Automotive)
Min
Typ[7]
Max
Min
Typ[7]
Max
Unit
VOH
Output HIGH
Voltage
IOH = –1 mA
2.4
–
–
2.4
–
–
V
VOL
Output LOW
Voltage
IOL = 2.1 mA
–
–
0.4
–
–
0.4
V
VIH
Input HIGH
Voltage
VCC = 4.5 V to 5.5 V
2.2
–
VCC + 0.5
2.2
–
VCC + 0.5
V
VIL
Input LOW
Voltage
VCC = 4.5 V to 5.5 V
–0.5
–
0.8
–0.5
–
0.8
V
IIX
Input Leakage
Current
GND < VI < VCC
–1
–
+1
–4
–
+4
A
IOZ
Output Leakage
Current
GND < VO < VCC, Output Disabled
–1
–
+1
–4
–
+4
A
ICC
VCC Operating
Supply Current
f = fmax = 1/tRC
–
18
25
–
18
35
mA
–
1.8
3
–
1.8
4
f = 1 MHz
VCC = VCC(max)
IOUT = 0 mA
CMOS levels
ISB1 [8]
Automatic CE
Power Down
Current — CMOS
Inputs
CE1 > VCC 0.2 V or CE2 < 0.2 V
or (BHE and BLE) > VCC – 0.2 V,
VIN > VCC – 0.2 V, VIN < 0.2 V,
f = fmax (Address and Data Only),
f = 0 (OE and WE), VCC = VCC(max)
–
2
8
–
2
30
A
ISB2 [8]
Automatic CE
Power Down
Current — CMOS
Inputs
CE1 > VCC – 0.2 V or CE2 < 0.2 V
or (BHE and BLE) > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V,
f = 0, VCC = VCC(max)
–
2
8
–
2
30
A
Notes
4. VIL(min) = –2.0 V for pulse durations less than 20 ns for I < 30 mA.
5. VIH(max) = VCC + 0.75 V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
8. Chip enables (CE1 and CE2) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating.
Document #: 38-05695 Rev. *H
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CY62157E MoBL®
Capacitance
Parameter[9]
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25 °C, f = 1 MHz, VCC = VCC(typ)
Max
Unit
10
pF
10
pF
Thermal Resistance
Parameter[9]
Description
JA
Thermal Resistance
(Junction to Ambient)
JC
Thermal Resistance
(Junction to Case)
Test Conditions
44-pin TSOP II 48-ball VFBGA Unit
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
77
72
°C/W
13
8.86
°C/W
AC Test Loads and Waveforms
Figure 1. AC Test Loads and Waveforms
VCC
OUTPUT
R1
3V
10%
GND
Rise Time = 1 V/ns
R2
30 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Equivalent to:
THEVENIN EQUIVALENT
RTH
OUTPUT
V
Parameters
R1
R2
RTH
VTH
Values
1800
990
639
1.77
Unit



V
Note
9. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05695 Rev. *H
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CY62157E MoBL®
Data Retention Characteristics
Over the Operating Range
Parameter
Description
VDR
VCC for Data Retention
ICCDR[11]
Data Retention Current
tCDR [12]
Chip Deselect to Data
Retention Time
tR [13]
Operation Recovery Time
Conditions
VCC = 2 V, CE1 > VCC – 0.2 V or
CE2 < 0.2 V or
(BHE and BLE) > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V
Min
Typ [10]
Max
Unit
2
–
–
V
Industrial
–
–
8
A
Automotive
–
–
30
0
–
–
ns
CY62157ELL-45
45
–
–
ns
CY62157ELL-55
55
–
–
Data Retention Waveform
Figure 2. Data Retention Waveform[14]
DATA RETENTION MODE
VCC
VCC(min)
tCDR
VDR > 2 V
VCC(min)
tR
CE1 or
BHE.BLE
or
CE2
Notes
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
11. Chip enables (CE1 and CE2) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB1 / ISB2 / ICCDR spec. Other inputs can be left floating.
12. Tested initially and after any design or process changes that may affect these parameters.
13. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 s or stable at VCC(min) > 100 s.
14. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
Document #: 38-05695 Rev. *H
Page 6 of 18
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CY62157E MoBL®
Switching Characteristics
Over the Operating Range
Parameter[15, 16]
45 ns (Industrial)
Description
55 ns (Automotive)
Min
Max
Min
Max
Unit
Read Cycle
tRC
Read Cycle Time
45
–
55
–
ns
tAA
Address to Data Valid
–
45
–
55
ns
tOHA
Data Hold from Address Change
10
–
10
–
ns
tACE
CE1 LOW and CE2 HIGH to Data Valid
–
45
–
55
ns
tDOE
OE LOW to Data Valid
–
22
–
25
ns
tLZOE
OE LOW to Low Z[17]
5
–
5
–
ns
–
18
–
20
ns
ns
OE HIGH to High
tHZOE
Z[17, 18]
Z[17]
tLZCE
CE1 LOW and CE2 HIGH to Low
10
–
10
–
tHZCE
CE1 HIGH and CE2 LOW to High Z[17, 18]
–
18
–
20
ns
tPU
CE1 LOW and CE2 HIGH to Power Up
0
–
0
–
ns
tPD
CE1 HIGH and CE2 LOW to Power Down
–
45
–
55
ns
tDBE
BLE/BHE LOW to Data Valid
–
45
–
55
ns
tLZBE
BLE/BHE LOW to Low Z[17]
10
–
10
–
ns
–
18
–
20
ns
BLE/BHE HIGH to High
tHZBE
Write
Z[17, 18]
Cycle[19]
tWC
Write Cycle Time
45
–
55
–
ns
tSCE
CE1 LOW and CE2 HIGH to Write End
35
–
40
–
ns
tAW
Address Setup to Write End
35
–
40
–
ns
tHA
Address Hold from Write End
0
–
0
–
ns
–
0
–
ns
tSA
Address Setup to Write Start
0
tPWE
WE Pulse Width
35
–
40
–
ns
tBW
BLE/BHE LOW to Write End
35
–
40
–
ns
tSD
Data Setup to Write End
25
–
25
–
ns
tHD
Data Hold from Write End
0
–
0
–
ns
tHZWE
WE LOW to High Z[17, 18]
–
18
–
20
ns
tLZWE
WE HIGH to Low Z[17]
10
–
10
–
ns
Notes
15. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse
levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the AC Test Loads and Waveforms on page 5.
16. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.
17. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.
18. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.
19. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE, or both = VIL, and CE2 = VIH. All signals must be active to initiate a
write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
Document #: 38-05695 Rev. *H
Page 7 of 18
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CY62157E MoBL®
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled) [20, 21]
tRC
RC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled) [21, 22]
ADDRESS
tRC
CE1
tPD
tHZCE
CE2
tACE
BHE/BLE
tDBE
tHZBE
tLZBE
OE
tHZOE
tDOE
DATA OUT
tLZOE
HIGH IMPEDANCE
HIGH
IMPEDANCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
tPU
50%
50%
ICC
ISB
Notes
20. The device is continuously selected. OE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH.
21. WE is HIGH for read cycle.
22. Address valid before or similar to CE1, BHE, BLE transition LOW and CE2 transition HIGH.
Document #: 38-05695 Rev. *H
Page 8 of 18
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CY62157E MoBL®
Switching Waveforms (continued)
Write Cycle No. 1 (WE Controlled) [23, 24, 25]
tWC
ADDRESS
tSCE
CE1
CE2
tAW
WE
tPWE
tBW
BHE/BLE
tHD
OE
DATA I/O
tHA
tSA
tSD
NOTE 26
VALID DATA
tHZOE
Notes
23. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE, or both = VIL, and CE2 = VIH. All signals must be active to initiate
a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
24. Data I/O is high impedance if OE = VIH.
25. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
26. During this period, the I/Os are in output state. Do not apply input signals.
Document #: 38-05695 Rev. *H
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CY62157E MoBL®
Switching Waveforms (continued)
Write Cycle No. 2 (CE1 or CE2 Controlled) [27, 28, 29]
tWC
ADDRESS
tSCE
CE1
CE2
tSA
tAW
tHA
tPWE
WE
tBW
BHE/BLE
OE
DATA I/O
tSD
NOTE 30
tHD
VALID DATA
tHZOE
Notes
27. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE, or both = VIL, and CE2 = VIH. All signals must be active to initiate
a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
28. Data I/O is high impedance if OE = VIH.
29. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
30. During this period, the I/Os are in output state. Do not apply input signals.
Document #: 38-05695 Rev. *H
Page 10 of 18
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CY62157E MoBL®
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW) [31]
tWC
ADDRESS
tSCE
CE1
CE2
tBW
BHE/BLE
tAW
tHA
tSA
tPWE
WE
tSD
DATA I/O
NOTE 32
tHD
VALID DATA
tLZWE
tHZWE
Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) [31]
tWC
ADDRESS
CE1
CE2
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tSD
DATA I/O
NOTE 32
tHD
VALID DATA
Notes
31. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
32. During this period, the I/Os are in output state. Do not apply input signals.
Document #: 38-05695 Rev. *H
Page 11 of 18
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CY62157E MoBL®
Truth Table
CE1
WE
OE
BHE
BLE
[33]
Mode
Power
X
X
X
X
High Z
Deselect/Power Down
Standby (ISB)
L
X
X
X
X
High Z
Deselect/Power Down
Standby (ISB)
X[33]
X[33]
X
X
H
H
High Z
Deselect/Power Down
Standby (ISB)
L
H
H
L
L
L
Data Out (I/O0–I/O15)
Read
Active (ICC)
L
H
H
L
H
L
Data Out (I/O0 –I/O7 );
High Z (I/O8–I/O15)
Read
Active (ICC)
L
H
H
L
L
H
High Z (I/O0–I/O7);
Data Out (I/O8–I/O15)
Read
Active (ICC)
L
H
H
H
L
H
High Z
Output Disabled
Active (ICC)
L
H
H
H
H
L
High Z
Output Disabled
Active (ICC)
L
H
H
H
L
L
High Z
Output Disabled
Active (ICC)
L
H
L
X
L
L
Data In (I/O0–I/O15)
Write
Active (ICC)
L
H
L
X
H
L
Data In (I/O0–I/O7);
High Z (I/O8–I/O15)
Write
Active (ICC)
L
H
L
X
L
H
High Z (I/O0–I/O7);
Data In (I/O8–I/O15)
Write
Active (ICC)
H
X
[33]
CE2
X
Inputs/Outputs
Note
33. The ‘X’ (Don’t care) state for the Chip enables in the truth table refer to the logic state (either HIGH or LOW). Intermediate voltage levels on these pins is not permitted.
Document #: 38-05695 Rev. *H
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CY62157E MoBL®
Ordering Information
Speed
(ns)
Ordering Code
Package
Diagram
Package Type
Operating
Range
45
CY62157ELL-45ZSXI
51-85087
44-pin Thin Small Outline Package Type II (Pb-free)
Industrial
55
CY62157ELL-55ZSXE
51-85087
44-pin Thin Small Outline Package Type II (Pb-free)
Automotive
CY62157ELL-55BVXE
51-85150
48-ball Very Fine-Pitch Ball Grid Array (Pb-free)
Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
CY 621 5
7
E
LL - XX XX X X
Temperature Range: X = I or E
I = Industrial; E = Automotive-E
Pb-free
Package Type: XX = ZS or BV
ZS = 44-pin TSOP II
BV = 48-ball VFBGA
Speed Grade: XX = 45 ns or 55 ns
Low Power
E = Process Technology 90 nm
Buswidth = × 16
Density = 8-Mbit
Family Code: MoBL SRAM family
Company ID: CY = Cypress
Document #: 38-05695 Rev. *H
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CY62157E MoBL®
Package Diagrams
Figure 3. 48-ball VFBGA (6 × 8 × 1 mm) BV48/BZ48, 51-85150
51-85150 *F
Document #: 38-05695 Rev. *H
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CY62157E MoBL®
Package Diagrams (continued)
Figure 4. 44-pin TSOP Z44-II, 51-85087
51-85087 *C
Document #: 38-05695 Rev. *H
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CY62157E MoBL®
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CE
chip enable
CMOS
complementary metal oxide semiconductor
°C
degree Celcius
I/O
input/output
MHz
Mega Hertz
OE
output enable
μA
micro Amperes
RAM
random access memory
μs
micro seconds
SRAM
static random access memory
mA
milli Amperes
TTL
transistor-transistor logic
mm
milli meter
TSOP
thin small outline package
ns
nano seconds
VFBGA
very fine-pitch ball grid array

ohms
WE
write enable
%
percent
pF
pico Farad
V
Volts
W
Watts
Document #: 38-05695 Rev. *H
Symbol
Unit of Measure
Page 16 of 18
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CY62157E MoBL®
Document History Page
Document Title: CY62157E MoBL®, 8-Mbit (512 K × 16) Static RAM
Document Number: 38-05695
Rev.
ECN No.
Issue Date
Orig. of
Change
**
291273
See ECN
PCI
New data sheet
*A
457689
See ECN
NXR
Added Automotive Product
Removed Industrial Product
Removed 35 ns and 45 ns speed bins
Removed “L” bin
Updated AC Test Loads table
Corrected tR in Data Retention Characteristics from 100 s to tRC ns
Updated the Ordering Information and replaced the Package Name column
with Package Diagram
*B
467033
See ECN
NXR
Added Industrial Product (Final Information)
Removed 48 ball VFBGA package and its relevant information
Changed the ICC(typ) value of Automotive from 2 mA to 1.8 mA for f = 1MHz
Changed the ISB2(typ) value of Automotive from 5 A to 1.8 A
Modified footnote #4 to include current limit
Updated the Ordering Information table
*C
569114
See ECN
VKN
Added 48 ball VFBGA package
Updated Logic Block Diagram
Added footnote #3
Updated the Ordering Information table
*D
925501
See ECN
VKN
Added footnote #9 related to ISB2 and ICCDR
Added footnote #14 related AC timing parameters
*E
1045801
See ECN
VKN
Converted Automotive specs from preliminary to final
*F
2934396
06/03/10
VKN
Added footnote #23 related to chip enable
Updated package diagrams
Updated template.
*G
3110053
12/14/2010
PRAS
Changed Table Footnotes to Footnotes.
Added Ordering Code Definitions.
*H
3269641
05/30/2011
RAME
Removed the note “For best practice recommendations, please refer to the
Cypress application note AN1064, SRAM System Guidelines.” and its
reference in Functional Description.
Updated Electrical Characteristics.
Updated Data Retention Characteristics.
Added Acronyms and Units of Measure.
Updated in new template.
Document #: 38-05695 Rev. *H
Description of Change
Page 17 of 18
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CY62157E MoBL®
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
PSoC Solutions
cypress.com/go/automotive
cypress.com/go/clocks
psoc.cypress.com/solutions
cypress.com/go/interface
PSoC 1 | PSoC 3 | PSoC 5
cypress.com/go/powerpsoc
cypress.com/go/plc
Memory
Optical & Image Sensing
PSoC
cypress.com/go/memory
cypress.com/go/image
cypress.com/go/psoc
Touch Sensing
cypress.com/go/touch
USB Controllers
cypress.com/go/USB
Wireless/RF
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2004-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 38-05695 Rev. *H
Revised May 30, 2011
Page 18 of 18
MoBL is a registered trademark and More Battery Life is a trademark of Cypress Semiconductor. All products and company names mentioned in this document may be the trademarks of their respective
holders.
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