HMC980LP4E v01.0911 Typical Applications Features • Automatic Gate voltage adjustment (No Calibration required) Military & Space • Supply Voltage (5V to 16.5V) • Test Instrumentation • • Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type devices • CATV Laser Driver Biasing • Cellular Base Station • Wireless Infrastructure Equipment • Microwave Radio & VSAT • 13 BIAS CONTROLLERS - SMT ACTIVE BIAS CONTROLLER HIGH CURRENT Functional Diagram • Adjustable Drain Current up to 1.6 A • Sink or source gate current • Internal negative voltage generation • Can be disabled to use external negative rail • Fast Enable/Disable • Trigger-out Output for Daisy Chain • Power-Up and Power-Down Sequencing • Over/Under Current Alarm with built-in hystresis • 24 Lead 4mmx4mm QFN Package: 16mm2 General Description HMC980LP4E is an active bias controller that can automatically adjust the gate voltage of an external amplifier to achieve constant bias current. With an integrated controller, HMC980LP4E achieves safe power on/off, disable/enable and automatic supply sequencing ensuring the safety of the external amplifier. It can be used to bias any enhancement and depletion type amplifier operating in Class-A regime with drain voltages (VDRAIN) from 5V to 16.5V and drain currents (IDRAIN) up to 1.6 A, offering a complete biasing solution. HMC980LP4E achieves excellent bias stability over supply, temperature and process variations, and eliminates the required calibration procedures usually employed to prevent RF performance degradation due to such variations. The HMC980LP4E is housed in an RoHS compliant 4x4 mm QFN leadless package with an exposed backside pad to improve thermal characteristics. 13 - 1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Electrical Specifications, TA = +25°C, VDD=12V, VDIG= 3.3V, Depletion Master Unless Otherwise Noted Parameter Supply Voltage Symbol Conditions Vdd Charge Pump Oscillator Frequency FOSC Voltage Reference VREF Enable Input Threshold S0, S1 Input Threshold ENTHRS SWTHRS 16.5 Units V 19 mA EN = GND 7.5 mA EN = VDIG 20 mA EN = GND 9 mA VDIG= 3.3 V 3.5 mA VDIG= 5 V 6.5 mA 300 kHz IDD IDIG Max. EN = VDIG VDD = 12V VDIG Quiescent Current Typ. 5 VDD = 5V VDD Quiescent Current Min. 1.44 Vinlow Vinhigh V 1 V 1 V 1.4 V Vinlow Vinhigh 1.4 V 13 DRAIN Current Adjustment Range DRAIN Current Change Over Digital Voltage DRAIN Current Change Over Temperature DRAIN Range IDRAIN ΔIDRAINV S1=S0=GND 0.05 0.3 A S1=GND, S0=VDIG 0.3 0.6 A S1=VDIG, S0=GND 0.6 1.2 A S1=VDIG, S0=VDIG 1.2 1.6 A VDRAIN set to 12V, IDRAIN set to 400 mA VDRAIN VDRAIN Change Over Temperature ΔVDRAIN 0.4 %/V 0.023 %/C 5 VDRAIN set to 12V, IDRAIN set to 400 mA 16.5 0.02 V %/C VNEG Characteristics Negative Voltage Output VNEG VNEG Current Sink INEG 0 -2.46 IG -4 V 60 mA 4 mA VGATE Characteristics GATE Current Supply VGATE Low Level VG_MIN VNEG V VGATE High Level VG_MAX VNEG+4.5 V VG2 Characteristics VG2 Current Supply IG2 VG2 Adjustment Range VG2 Adjustment Range VDIG VDIG Quiescent Current IDIG VG2<2V -0.1 0.1 mA 6V>VG2>2V -1 1 mA VG2>6V -5 5 mA 1 VDD-1.3 V 3.3 5 V BIAS CONTROLLERS - SMT VDRAIN Characteristics VDIG Characteristics VDD= 12V, VDIG=EN =3.3 V 3.5 mA 2.8 Ohm SW Characteristics S1=S0=GND Internal Switch Resistance RDS_ON S1=GND, S0=VDIG 1.55 Ohm S1=VDIG, S0=GND 0.85 Ohm S1=VDIG, S0=VDIG 0.7 Ohm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 2 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Bias Current Accuracy[1] Bias Current Accuracy[2] 1475 405 IDrain is set to: 388mA 400 1425 IDRAIN (mA) IDRAIN (mA) 395 390 385 1400 1375 1350 380 +25 C +85 C -40 C 375 +25 C +85 C -40 C 1325 1300 370 3.3 3.5 3.6 3.8 4.0 13 4.2 4.3 4.5 4.7 4.8 3.3 5.0 3.5 3.6 3.8 4 4.3 4.5 4.7 14 5 14 12 12 VDD (V) VDRAIN (V) VDIG(V) VG2 (V) VNEG (V) VGATE (V) 8 VDD(V) VDRAIN (V) VDIG (V) VG2 (V) VNEG (V) VGATE (V) 10 VOLTAGE (V) 10 6 4 2 8 6 4 2 0 0 -2 -2 -4 -4 0 10 20 30 40 50 60 TIME (ms) 70 80 90 100 Enable Waveform 0 20 40 60 80 100 120 TIME (ms) 140 160 180 200 Disable Waveform 14 16 12 12 EN(V) VDRAIN (V) VG2 (V) VNEG (V) VGATE (V) 10 VOLTAGE (V) 8 4 0 8 6 4 2 0 -4 EN(V) VDRAIN (V) VG2 (V) VNEG (V) VGATE (V) -8 -2 -4 -6 -12 0 1 2 3 4 5 TIME (ms) 6 4 5 6 7 8 TIME (ms) [1] HMC637LP5 is used as external amplifier [2] HMC591LP5 is used as external amplifier 13 - 3 4.8 Shutdown Waveform Power Up Waveform VOLTAGE (V) 4.2 VDIG (V) VDIG (V) VOLTAGE (V) BIAS CONTROLLERS - SMT IDrain is set to: 1409mA 1450 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 10 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Load Regulation @ VDD=5V, VDIG=3.3V, SW0=3.3V, SW1=GND 6 6 5 5 4 3 2 100 150 200 +25C +85C -40C 3 +25C +85C -40C 50 4 250 2 300 300 350 400 IDRAIN (mA) Load Regulation @ VDD=16.5V, VDIG=5.0V, SW0=GND, SW1=VDIG 500 550 17 17 16 16 15 +25C +85C -40C +25C +85C -40C 700 800 900 1000 1100 13 1200 1200 1300 1400 1500 1600 IDRAIN (mA) IDRAIN (mA) VNEG Load Regulation @ VDD=5V VNEG Load Regulation @ VDD=16.5V -2 -2 -2.1 -2.1 -2.2 -2.2 VNEG (V) VNEG (V) 13 15 14 14 13 600 600 Load Regulation @ VDD=16.5V, VDIG=5.0V, SW0=VDIG, SW1=VDIG VDRAIN (V) VDRAIN (V) 450 IDRAIN (mA) -2.3 -2.4 BIAS CONTROLLERS - SMT VDRAIN (V) VDRAIN (V) Load Regulation @ VDD=5V, VDIG=3.3V, SW0=GND, SW1=GND +25 C +85 C -40 C -2.3 -2.4 +25 C +85 C -40 C -2.5 -2.5 0 5 10 15 INEG (mA) 20 25 30 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 INEG (mA) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 4 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT 40 -2.2 40 -2.25 30 -2.25 30 -2.3 20 10 -2.35 10 -2.4 0 -2.4 0 VNEG (V) 20 -2.45 -10 -20 -2.5 -20 -2.55 -30 -2.55 -30 -2.6 -40 -2.6 -2.45 -10 -2.5 1 2 3 4 5 6 7 8 9 10 -40 0 1 2 3 4 TIME (ms) 13 7 8 10 10 9 -0.25 IDrain is set to : 388mA VG2=0.97V VG2=1.81V VG2=3.73V VG2=6.68V 8 7 VG2 (V) -0.5 -0.75 -1 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 IDrain is set to : 388mA 6 5 4 3 +25C +85C -40C -1.25 2 1 6 7 0 -8 -6 -4 -2 0 2 4 IG2 (mA) IG (mA) VNEG Line Regulation vs. Supply Voltage -2.44 No load condition VNEG (V) -2.48 +25C +85C -40C -2.5 9 VG2 Load Regulation @ VDD=12V [2] 0 VGATE (V) 6 TIME (ms) VGATE Load Regulation @ VDD=12V [1] -1.5 5 -2.46 5 7 9 11 13 15 17 SUPPLY VOLTAGE (V) [1] HMC637LP5 is used as external amplifier [2] HMC637LP5 is used as external amplifier 13 - 5 INEG (mA) -2.3 -2.35 0 BIAS CONTROLLERS - SMT VNEG Load Transient VDD=16.5V -2.2 INEG (mA) VNEG (V) VNEG Load Transient VDD=5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 8 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Absolute Maximum Ratings VDD 18V 10.6 °C/W S0, S1, EN, ALM, VREF, VNEGFB, VGATEFB, TRIG_OUT, ISENSE, ALML, ISET, ALMH, FIXBIAS Thermal Resistance (RTH) (Junction to package bottom) -0.5V to VDIG + 0.5V Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C CP_VDD VDD-0.5V to VDD+0.5V ESD Sensitivity (HBM) Class 1A CP_OUT, VG2_CONT, VG2, VDRAIN -0.5V to VDD + 0.5V VDIG 5.5V VNEG -4V to GND VGATE VNEG to GND Junction Temperature 125 °C Continuous Pdiss (T = 85 °C) (Derate 94.79 mW/°C above 85 °C) 3.8 Watt Note that there are two different voltage domains on HMC980LP4E; a high voltage domain Vdd, and a low voltage domain VDIG. Take necessary precautions not to violate ABS MAX ratings of each subdomains. Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. BIAS CONTROLLERS - SMT 13 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Package Information Part Number Package Body Material Lead Finish HMC980LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H980 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 6 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Pin Descriptions BIAS CONTROLLERS - SMT 13 13 - 7 Pin Number Function Description 1,2 VDD Bias supply Pin. Connect supply voltage to this pin with appropriate filtering. 3.4 S0,S1 Control pins for internal switch resistance. If left floating, default to HIGH. Refer to Table-1 in Application Notes for recommended settings 5 EN Enable pin. Bias control loop is enabled when Ven is HIGH(VDIG). If left floating, Ven defaults to HIGH (enabled). 6 ALM Over/under current alarm. Provides an active high signal (VDIG) if the quiescent bias exceed the upper threshold or drops below the lower threshold. 19 TRIGOUT Trigger out signal. Generates a HIGH (3.3V) signal when the active bias system stabilizes. This signal can be used to trigger next device (ENABLE) if more than one HMC980LP4E is used in a daisy chain. 7 CP_VDD Bias supply for negative voltage generator. Connect supply voltage with appropriate filtering. CP_VDD supply voltage should be same as VDD 8 CP_OUT Negative voltage generator charge pump output. Negative voltage generator requires a flying capacitor, a reservoir capacitor and two diodes to operate. 9 VDIG 3.3V-5V Digital Bias supply Pin. Connect supply voltage to this pin with appropriate filtering.. 10 VREF 1.44V reference voltage. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Pin Descriptions (Continued) Function Description 11 VNEGFB Feedback (Control) pin for Negative Voltage Generator Charge Pump. Float to activate the negative voltage generator / Short to GND to disable the negative voltage generator. 12 VGATEFB Control pin for VGATEFB. Float VGATEFB when a depletion mode transistor is biased. Selects the mode of operation along with VNEGFB pin. 13 VG2_CONT Control voltage of the second gate pin VG2. Use a resistor divider between VDD and GND to set the voltage. VG2 is typically 1.3V lower than the VG2CONT 14 VG2 Second gate control. VNEG Negative input to the chip. Should be supplied with CPOUT when negative voltage generator is enabled, or connect to external VSS when negative voltage generator is enabled. Defaults to -2.5V. If a value different than -2.5V required, please contact factory. 16 VGATE Gate Control pin for external amplifier. Connect to the gate (base) of the external amplifier. In order to guarantee stability, a 2.2μF capacitor should be connected between the gate (base) terminal of the external amplifier and GND as close to the amplifier as possible. 17, 18 VDRAIN Drain voltage. Should be connected to the supply terminal of the external amplifier. A minimum 10 nF capacitor has to be placed close to the external amplifier to improve load regulation. 15 Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 BIAS CONTROLLERS - SMT Pin Number 13 - 8 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Pin Descriptions (Continued) Pin Number Function Description ISENSE Drain current adjustment pin. To adjust the bias current of the external amplifier connect a resistor (Rsense) from ISENSE pin to GND according to eqn(2) on page 13-15. A high precision resistor (e.g. 0.5%, ±25 ppm TCR) is recommended for good bias accuracy. 21 ALML A high precision resistor (e.g. 0.5%, ±25 ppm TCR) to GND is recommended for good bias accuracy. The value of the resistor sets the threshold value for under current alarm. If alarm feature is not used ALML can be shorted to ISet. 22 ISET A high precision resistor (e.g. 0.5%, ±25 ppm TCR) between ALML and ISet is recommended for good bias accuracy. The total external resistance from ISet pin to GND should always be equal to 5 k Ω. ALMH A high precision resistor (e.g. 0.5%, ±25 ppm TCR) to ISet pin is recommended for good bias accuracy. The value of the resistor sets the threshold. If alarm feature is not used ALMH can be shorted to ISet. 20 BIAS CONTROLLERS - SMT 13 13 - 9 23 Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Pin Descriptions (Continued) Pin Number Function Description 24 FIXBIAS A high precision (e.g. 0.5%, ±25 ppm TCR) 10K resistor to ground is recommended for good bias accuracy. Interface Schematic BIAS CONTROLLERS - SMT 13 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 10 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Evaluation Board Circuit BIAS CONTROLLERS - SMT 13 Notes: [1] A variable resistor is assembled on R10 slot to adjust bias current for evaluating various different amplifiers without soldering. 13 - 11 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Evaluation PCB 600-00098-00 TP12 TP3 C2 TP4 S1 TP9VDRAIN C3 D1 C8 S0 C1 VDD C9 R14 R11 R13 R12 R10 TP1 R4 C6 TP5 EN TP6 TRIGOUT TP11 TP10 TP8 VG2 R3 C5 TP2 C4 C7 ALM VGATE GND TP7 VDIG List of Materials for Evaluation PCB EVAL01-HMC980LP4E [1] Item Description TP1-12 Test Point C1, C4 4.7 µF Capacitor, 1210 Pkg. C2, C5, C9 10 nF Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C6 1 µF Capacitor, 0603 Pkg. C7 10 µF Capacitor, 0603 Pkg. C8 2.2 µF Capacitor, X5R Pkg. D1 Dual Series Shottky Barrier Diode, BAT54SLT1 R3 5.1k Ohm Resistor, 0402 Pkg R4 3.3k Ohm Resistor, 0402 Pkg. R10 Trim Potentiometer R11, R12 301 Ohm Resistor, 0402 Pkg. R13 4.7k Ohm Resistor, 0402 Pkg. R14 10k Ohm Resistor, 0402 Pkg. U1 HMC980LP4E Switch Type ABC-High Current Version-1 PCB [2] EVAL01-HMC980LP4E Evaluation PCB 13 BIAS CONTROLLERS - SMT GND [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 12 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Application Notes Detailed Description All amplifiers require stable quiescent current to operate at their specifications. Many amplifiers in the market require external biasing to achieve stable quiscent current. HMC980LP4E is a fully integrated biasing solution for such amplifiers.With an internal feedback, the automatic gate voltage control achieves constant quiescent bias through the amplifier under bias, independent of temperature and amplifier threshold variations. The quiescent current is adjusted with a resistor connected externally. The HMC980LP4E employs an integrated control circuitry to manage safe power-up and power-down sequencing of the targeted amplifier. The HMC980LP4E can provide auto-bias solution to virtually any amplifier in the market (both enhancement and depletion type) with a quiescent current of up to 1.6A and a supply voltage of up to 16.5V. BIAS CONTROLLERS - SMT 13 The HMC980LP4E has an integrated negative voltage generator to create negative voltages required to drive depletion mode amplifiers. If an external negative supply is already available or an enhancement mode device is targeted, the negative voltage generator can be disabled. The HMC980LP4E achieves excellent bias stability over supply and temperature variations. The gate control can both sink and source current (±4 mA) which is required to compensate for charging gate current of the amplifier over input power variations. The HMC980LP4E also generates a second gate voltage VG2. VG2 can be adjusted through a resistor divider connected to VDD for the amplifiers which require second gate voltage. The HMC980LP4E ensures safety of the external amplifier during turn on/off by automatically adjusting the sequence of VDRAIN, VGATE and VG2 outputs. The HMC980LP4E has a built-in over-under current alarm feature. If a fault conditions arises (either under or over current) an alarm signal is generated (ALM, active HIGH). The current alarm signal provided in HMC980LP4E does not affect the operation of the controller. It is included for monitoring purposes where a system level protection can be implemented with external control circuitry. The HMC980LP4E employs S0, S1 pins to control RDS_ON resistance of the internal switch between VDD and VDRAIN. Refer to the section under the “Supply and Drain Voltage” section for details. The HMC980LP4E has a built-in self protection feature to protect itself against short circuit conditions at the VDRAIN output. The HMC980LP4E has also a built-in VNEG fault protection feature to protect both itself and the amplifier under bias against short circuit conditions at the VNEG pin. Digital Power Supply (VDIG) The HMC980LP4E requires an external low voltage bias rail (3.3V to 5.0V). VDIG powers the internal logic circuitry. VDIG draws and average of 3.5 mA from a 3.3V. VDIG can accept voltages up to 5.0V. Supply and Drain Voltage (VDD and VDRAIN) The VDD supply to the HMC980LP4E is directly connected to the VDRAIN output through an internal MOSFET switch. This internal MOSFET is controlled through power-up sequencing which ensures that no voltage is applied to the drain of the external amplifier until the gate voltage is pulled down to VNEG (ensuring external amplifier is pinched-off). The VDRAIN output of the HMC980LP4E should be connected to the drain (collector) of the amplifier under bias for the active bias control feedback and power-up/down sequencing to operate properly. 13 - 13 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT There will be a voltage drop from VDD to VDRAIN due to finite RDS_ON resistance of the internal switch. To compensate for this voltage drop choose the VDD value as shown in equation (1). VDD = VDRAIN + IDRAIN x RDS_ON (1) where VDRAIN is the supply voltage of the external amplifier and IDRAIN is the desired constant bias current through the external amplifier. Note that RDS_ON resistance of the internal FET switch can be adjusted through S0, S1 pins based on the DRAIN current requirement as shown in table-1. RDS_ON is typically equal to 0.7 Ohm when S0 and S1 are pulled up to VDIG, and is typically equal to 2.8 Ohm when S0 and S1 are pulled down to GND. If S0 and S1 pins are left floating, it is pulled up to VDIG through an internal weak pull-up. Recommended settings for the S0 and S1 positions are given in Table-1. Not using the HMC980LP4E in the recommended settings may increase the power dissipation of the part and the part-to-part variation. 13 Table 1. Recomended Current Range Configuration Condition RD_ON Value (Ohm) 0.05 to 0.3 S1=S0=GND 2.8 0.3 to 0.6 S1=GND, S0=VDIG 1.55 0.6 to 1.2 S1=VDIG, S0=GND 0.85 1.2 to 1.6 S1=VDIG, S0=VDIG 0.7 Negative Voltage Generator (VNEGOUT) The HMC980LP4E has internal regulated charge pump circuitry to generate the negative voltage (VNEGOUT) required for depletion mode devices. The HMC980LP4E generates -2.5V at the VNEGOUT output in default configuration. It requires two diodes and two capacitors connected externally as shown in the sample application schematics. It can be disabled through the VGATEFB and VNEGFB pins, if an enhancement device is targeted or a negative supply is already available in the system. In this configuration, simply connect the available negative supply to the VNEG pin. See Table-2 for the operation mode selection. The HMC980LP4E is designed to reject the ripple on the VNEGOUT pin by isolating VNEGOUT from the VGATE. Thus, switching noise of the charge-pump is effectively isolated from the external amplifier. Enable/Disable (EN) BIAS CONTROLLERS - SMT Current Range (A) The active bias control loop is enabled when EN is pulled up to VDIG, and it is disabled when it is pulled down to GND. If EN is left floating HMC980LP4E is enabled through an internal weak pull-up. Note that VNEG operation is independent of EN condition. EN signal controls the operation of only VGATE, VG2 and VDRAIN outputs. When EN pulled down to GND, the HMC980LP4E discharges VDRAIN and VG2 down to GND and it pulls the VGATE down to VNEG. When EN pulled high to VDIG, HM980LP4E enables, VDRAIN and VG2, and enables the bias control loop to automatically adjust the VGATE voltage. Please see the “Active Bias Control Loop” section for detailed explanation and refer to the Enable and Disable waveforms for transient characteristics. Active Bias Control Loop The HMC980LP4E regulates the bias current (IDRAIN) of the amplifier under bias through VGATE output connected to the gate of the external amplifier. In this closed loop operation the current passing through the amplifier under bias is sampled and is used to automatically adjust VGATE to achieve constant quiescent bias through the external amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 14 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT The HMC980LP4E continuously adjusts VGATE voltage to achieve constant DRAIN current over any supply, temperature, process variations and threshold drifts due to aging. The part-to-part, temperature, and supply variation of the HMC980LP4E is excellent. Thus, by using an accurate sense resistor connected to the ISENSE pin, expensive calibration procedures in high volume production could be avoided. The gate control of the HMC980LP4E is designed to both sink and source current in to the gate of the targeted amplifier (at least ±4 mA). This unique feature is important to achieve nearly constant quiescent bias through the amplifier under varying gate current at different input power values. The bias current passing through the external amplifier can be adjusted with RSENSE, where RSENSE is the R10 connected from ISENSE to GND. Use the relation given in equation (2) to set the desired bias current through the external amplifier. IDRAIN=150/Rsense (A) BIAS CONTROLLERS - SMT 13 (2) VG2 Voltage Adjustment The HMC980LP4E generates a second gate voltage (VG2). VG2 can be adjusted through a resistor divider connected to VG2_CONT for the amplifiers which require second gate voltage. Eqn. (3) gives the formula to adjust VG2: VG2(V)= VDD*R4/(R3+R4) - 1.3 (3) For instance, choosing 5.1k Ohm as R3 and 3.3k Ohm as R4 sets VG2 voltage to 3.4V when VDD=12V. For improved accuracy, choose resistor values below 5k Ohm on R3. Self Protection Feature Due to the small resistance of the internal switch FET between VDD and VDRAIN, a large amount of current may flow through the HMC980LP4E. HMC980LP4E limits the maximum current to self protect itself under such fault conditions, by turning off VDRAIN and VGATE. The HMC980LP4E will remain in this protection mode until a full power-cycle or enable/disable cycle is applied. VNEG Fault Detection Feature In depletion mode operation VNEG is continuously monitored against short circuit fault to GND. If VNEG rises above a preset value (typically -0.6V) the system and the external amplifier are disabled by pulling VDRAIN and VG2 to GND and VGATE to VNEG. The system will stay in this stand-by mode until short fault at VNEG is fixed. Over/Under Current Alarm The HMC980LP4E provides over and under current alarm indicator ALM (pin#6) signal. The ALM is pulled up to VDIG when the IDRAIN current exceeds ± 6% (With the given R11, R12, and R13 values in application circuit) of IDRAIN regulation target value as shown in Figure 1. The alarm threshold level is user adjustable through R11,R12, and R13 according to the following equations: Over current ALM Threshold = Iocth = IDRAIN (1+R11/(R12+R13)), Under current ALM Threshold = Iucth = IDRAIN (1-R12/(R12+R13)) , where R12+R13 should always be equal to 5 kΩ (%1 accuracy) Threshold values possess a small built-in hysterisis. The condition of ALM signal does not effect the operation of HMC980LP4E. It is provided only for monitoring purposes. 13 - 15 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Over current Set current Under current ALARM Figure 1. Current Alarm Behavior Power-up and Enable Sequencing To ensure the safety of the external amplifier, the HMC980LP4E provides an automatic power-up sequence for enabling the active bias control loop. During start-up VDRAIN and VG2 are kept at GND while VGATE is taken to the most negative supply available (VGATE=VNEG). This ensures that external amplifier is completely pinched-off before VDRAIN is applied. When EN signal is received, VDRAIN is applied and the active bias loop is enabled. After the VDRAIN is applied, VG2 is generated. The power-up sequence is completed by increasing the VGATE linearly until the set IDRAIN value is reached. For power-down and disabling, the same sequencing is applied in the reverse order. Daisy-Chain Operation BIAS CONTROLLERS - SMT 13 HMC980LP4E produces a trigger out signal (TRIGOUT pin#19) when the quiscent current is in regulation. This trigger signal can be used to enable additional HMC980LP4E chips in a chain of amplifiers. The triggering sequence can be routed in any way, from input to output, or from output to input depending on the use. Figure-2 shows a sample use of three HMC980LP4Es in an amplification chain. Please note that, only one of the HMC980LP4E (in master mode) is used to generate the negative voltage and the remaining HMC980LP4E (in slave mode) is set to receive external negative voltage (which is provided from the master depletion mode HMC980LP4E). Generating negative voltage from a single HMC980LP4E reduces the number of the components in the system, and decreases the over all current consumption. Please note that, to ensure proper start-up, the system enable signal should be applied to the depletion master mode device that has the negative voltage generator. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 16 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT BIAS CONTROLLERS - SMT 13 Figure 2. Daisy Chain Operation Operation Modes HMC980LP4E can be configured to bias both enhancement and depletion mode external amplifiers. The mode of operation can be selected by setting two pins (VNEGFB, VGATEFB) as tabulated in Table-2. The connection to the VNEGIN should be adjusted accordingly. In order not to bias external amplifier in a wrong region, please make sure that the correct mode of operation is selected before powering up the HMC980LP4E. The HMC980LP4E does not allow the internal negative voltage generator to work if an enhancement mode is selected. Therefore, if VNEGFB is left floating while VGATEFB is grounded, HMC980LP4E will stay in standby mode. Please note that in depletion slave mode the external negative voltage should be between -2.3V to -3.5V for HMC980LP4E to operate. If your application requires negative voltages outside this range please contact Hittite application support. Table 2. Mode Selection VNEGFB MODE1 (Depletion/Master Mode) MODE2 (Depletion/Slave Mode) --MODE3 (Enhancement Mode) 13 - 17 VNEGIN Description FLOAT Connected to VNEGOUT Depletion mode transistor. Internal negative voltage generator is active and generates -2.5V. Sample application schematic given shown in Fig.3a. GND FLOAT Connected to External VSS Depletion mode transistor. Internal negative voltage generator is disabled. An external negative voltage less than -2.3V should be connected to VNEGIN. Sample application schematic given shown in Fig.3b. FLOAT GND N/A Not allowed. HMC980LP4E stays in standby. GND Connected to GND Enhancement mode transistor. Internal negative voltage generator is disabled. Sample application schematic given shown in Fig.3c. FLOAT GND VGATEFB For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Figure 3a. Depletion/Master Mode Amplifier Typical Application Circuit (Mode 1) BIAS CONTROLLERS - SMT 13 Figure 3b. Depletion/Slave Mode Amplifier Typical Application Circuit (Mode 2) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 18 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT BIAS CONTROLLERS - SMT 13 Figure 3c. Enhancement Mode Amplifier Typical Application Circuit (Mode 3) For biasing Hittite amplifiers compatable with HMC980LP4E refer to the Table 3, where values of the external components are provided on typical application circuit shown in Figure 3a. Table 3 - List of Bias Settings for Various Hittite Amplifiers Hittite Part Number VDRAIN (V) VDD (V) IDRAIN (mA) 5 5.83 295 RSENSE (kOhm) R4 (kOhm) R3 (kOhm) VG2 (V) S1 S0 open open - GND GND GND Gain Blocks & Drivers HMC-AUH256 0.508 LNAs HMC-ALH435 5 5.08 30 5.000 6.13 5 1.5 GND HMC-ALH444 5 5.15 55 2.727 5.95 5 1.5 GND GND HMC490 5 5.56 200 0.750 open open - GND GND HMC490LP5 5 5.56 200 0.750 open open - GND GND HMC594 6 6.28 100 1.500 open open - GND GND HMC594LC3B 6 6.28 100 1.500 open open - GND GND HMC609 6 6.48 170 0.882 open open - GND GND HMC609LC4 6 6.48 170 0.882 open open - GND GND HMC753LP4E 5 5.15 55 2.727 5.95 5 1.5 GND GND Linear & Power 13 - 19 HMC-ABH209 5 5.22 80 1.875 open open - GND GND HMC-ABH264 5 5.34 120 1.250 open open - GND GND HMC442 5 5.24 85 1.765 open open - GND GND HMC442LC3B 5 5.24 84 1.786 open open - GND GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Table 3 - List of Bias Settings for Various Hittite Amplifiers (Continued) HMC442LM1 VDRAIN (V) VDD (V) IDRAIN (mA) RSENSE (kOhm) R4 (kOhm) R3 (kOhm) VG2 (V) S1 S0 5 5.24 85 1.765 open open - GND GND HMC499 5 5.56 200 0.750 open open - GND GND HMC499LC4 5 5.56 200 0.750 open open - GND GND HMC-ABH241 5 5.62 220 0.682 open open - GND GND HMC-APH403 5 5.74 475 0.316 open open - GND VDIG HMC-APH460 5 5.77 900 0.167 open open - VDIG GND HMC-APH462 5 6.22 1440 0.104 open open - VDIG GND HMC-APH473 5 5.92 1080 0.139 open open - VDIG GND HMC-APH478 5 5.77 900 0.167 open open - VDIG GND HMC-APH510 5 5.99 640 0.234 open open - GND VDIG HMC-APH518 5 5.81 950 0.158 open open - VDIG GND HMC-APH596 5 6.12 400 0.375 open open - GND GND HMC-APH608 5 5.81 950 0.158 open open - VDIG GND HMC486 7 8.11 1300 0.115 open open - VDIG GND HMC486LP5 / HMC486LP5E 7 8.11 1300 0.115 open open - VDIG GND HMC487LP5 / HMC487LP5E 7 8.11 1300 0.115 open open - VDIG GND HMC489LP5 / HMC489LP5E 7 8.11 1300 0.115 open open - VDIG GND HMC498 5 5.70 250 0.600 open open - GND GND HMC498LC4 5 5.70 250 0.600 open open - GND GND HMC590 7 7.70 820 0.183 open open - VDIG GND HMC590LP5 / HMC590LP5E 7 7.70 820 0.183 open open - VDIG GND HMC591 7 8.14 1340 0.112 open open - VDIG GND HMC591LP5 / HMC591LP5E 7 8.14 1340 0.112 open open - VDIG GND HMC592 7 8.16 750 0.200 open open - GND VDIG HMC608LC4 5 5.87 310 0.484 open open - GND GND HMC693 5 6.24 800 0.188 open open - GND VDIG HMC756 7 8.22 790 0.190 open open - GND VDIG HMC757 7 8.11 395 0.380 open open - GND GND HMC757LP4E 5 6.12 400 0.375 open open - GND GND HMC863 6 7.05 375 0.400 open open - GND GND HMC863LP4E 6 7.05 375 0.400 open open - GND GND HMC864 6 7.16 750 0.200 open open - GND VDIG HMC906 6 7.02 1200 0.125 open open - VDIG GND 5.5 6.52 1200 0.125 open open - VDIG GND HMC949 7 8.02 1200 0.125 open open - VDIG GND HMC965LP5E 6 7.02 1200 0.125 open open - VDIG GND HMC968 6 6.77 900 0.167 open open - VDIG GND HMC969 6 6.77 900 0.167 open open - VDIG GND HMC943LP5E 13 BIAS CONTROLLERS - SMT Hittite Part Number Wideband (Distributed) HMC-AUH232 5 5.50 180 0.833 5.18 5 1.5 GND GND HMC-AUH249 5 5.56 200 0.750 5.07 5 1.5 GND GND HMC-AUH312 8 8.17 60 2.500 3.06 5 1.8 GND GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 20 HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Table 3 - List of Bias Settings for Various Hittite Amplifiers (Continued) Hittite Part Number BIAS CONTROLLERS - SMT 13 13 - 21 VDRAIN (V) VDD (V) IDRAIN (mA) RSENSE (kOhm) R4 (kOhm) R3 (kOhm) VG2 (V) S1 S0 HMC460 8 8.17 60 2.500 open open - GND GND HMC460LC5 8 8.21 75 2.000 open open - GND GND HMC463 5 5.17 60 2.500 open open - GND GND HMC463LH250 5 5.17 60 2.500 open open - GND GND HMC463LP5 5 5.17 60 2.500 open open - GND GND HMC465 8 8.45 160 0.938 2.48 5 1.5 GND GND HMC465LP5 8 8.45 160 0.938 2.48 5 1.5 GND GND HMC562 8 8.22 80 1.875 open open - GND GND HMC633 5 5.50 180 0.833 open open - GND GND HMC633LC4 5 5.50 180 0.833 open open - GND GND HMC634 5 5.50 180 0.833 open open - GND GND HMC634LC4 5 5.50 180 0.833 open open - GND GND HMC-930 10 10.49 175 0.857 4.22 5 3.5 GND GND HMC-459 8 8.81 290 0.517 4.77 5 3 GND GND HMC-464 8 8.81 290 0.517 4.77 5 3 GND GND HMC464LP5 / HMC464LP5E 8 8.81 290 0.517 4.77 5 3 GND GND HMC559 10 11.12 400 0.375 4.55 5 4 GND GND HMC619 12 12.84 300 0.500 4.82 5 5 GND GND HMC619LP5 / HMC619LP5E 12 12.84 300 0.500 4.82 5 5 GND GND HMC635 5 5.78 280 0.536 open open - GND GND HMC635LC4 5 5.78 280 0.536 open open - GND GND HMC637 12 13.12 400 0.375 6.27 5 6 GND GND HMC637LP5 / HMC637LP5E 12 13.12 400 0.375 4.62 5 5 GND GND HMC659 8 8.84 300 0.500 4.74 5 3 GND GND HMC659LC5 8 8.84 300 0.500 4.74 5 3 GND GND HMC797 10 11.12 400 0.375 3.80 5 3.5 GND GND HMC797LP5E 10 11.12 400 0.375 3.80 5 3.5 GND GND Microwave & Optical Drivers HMC870LC5 7 7.46 165 0.909 open open - GND GND HMC871LC5 8 8.21 75 2.000 open open - GND GND For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC980LP4E v01.0911 ACTIVE BIAS CONTROLLER HIGH CURRENT Notes: BIAS CONTROLLERS - SMT 13 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 13 - 22