AF4410N N-Channel Enhancement Mode Power MOSFET Features General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 13.5 ID (A) 10 Pin Assignments Pin Descriptions S 1 8 D Pin Name Description S 2 7 D S 3 6 D S G D Source Gate Drain G 4 5 D SO-8 Ordering information Feature F :MOSFET A X 4410N X X X PN Package Lead Free Packing S: SO-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Aug 30, 2005 1/5 AF4410N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range PD TSTG TJ Rating 30 ±25 10 8 50 2.5 0.02 -55 to 150 -55 to 150 TA=25ºC Units V V A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Maximum 50 Max. Units ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Min. Typ. Max. Units 30 - - V - 0.037 - V/oC 1 - 20 13.5 22 3 - VDS=30V, VGS=0V - - 1 VDS=24V, VGS=0V - - 25 VGS=±25V ID=10A, VDS=15V, VGS=5V VDS=25V, ID=1A, RG=3.3Ω, VGS=5V RD=25Ω VGS=0V, VDS=15V, f=1.0MHz - 13.5 4 7 14 16 21 15 1160 240 165 ±100 - Min. - Typ. 17.1 12 Max. 1.2 - VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=10A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=15V, ID=10A mΩ V S uA nA nC ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge 2 Test Conditions IS=2.1A, VGS=0V IS=5A, VGS=0V, dl/dt=100A/µs o Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board, 125 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw Rev. 1.1 Aug 30, 2005 2/5 AF4410N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw Rev. 1.1 Aug 30, 2005 3/5 AF4410N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Anachip Corp. www.anachip.com.tw Rev. 1.1 Aug 30, 2005 4/5 AF4410N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 4410N AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information Package Type: SO-8 D 7 6 5 2 3 4 E1 E 8 1 L DETAIL A B C A1 A e θ DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L θ e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 o o o 0 4 8 1.27 TYP. Anachip Corp. www.anachip.com.tw Rev. 1.1 Aug 30, 2005 5/5 臺灣易亨電子大陸代理商： 景淩達(香港)有限公司 GOLDLIGHT(HONGKONG) CO.,LTD 深圳市景淩達電子有限公司 SHENZHEN GOLDLIGHT ELECTRONICS CO.,LTD Govin(龍曉飛) TEL:0755-28132705(EXT:8688) 61331851(EXT:8688) 83263976 FAX:0755-83263978 28132705(EXT:88) Mobile:13802560427 MSN:[email protected] Http://www.anachip.net Http://www.anachipCN.com Http://www.anachip.com.tw E-mail:[email protected] E-mail:[email protected] ADD:深圳市福田區振華路桑達電子區華明大廈318室